CN106371284B - Figure light shield contact hole defect inspection method - Google Patents
Figure light shield contact hole defect inspection method Download PDFInfo
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- CN106371284B CN106371284B CN201611089543.0A CN201611089543A CN106371284B CN 106371284 B CN106371284 B CN 106371284B CN 201611089543 A CN201611089543 A CN 201611089543A CN 106371284 B CN106371284 B CN 106371284B
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- contact hole
- light shield
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention provides a kind of figure light shield contact hole defect inspection method, it is scanned using electron beam to by the contact hole formed after figure light shield photoetching, the conditions of exposure synthesis where amount of electrons that each contact hole is reflected back and each contact hole is made into weight calculation when then scanning, according to craft precision, determination will find out the number G of figure light shield contact hole defect, the highest preceding G contact hole of score value is labeled as defective contact hole, is that the figure light shield contacts hole defect in place of above-mentioned contact hole is corresponding on figure light shield.The above method, it is only necessary to it is exposed once using figure light shield, electronics beam scanning is used on wafer, can inputted in corresponding analysis software and be calculated, it is simple and convenient.And due to being that weight analysis calculates, conditions of exposure is taken into account, therefore Detection accuracy greatly promotes.
Description
Technical field
The present invention relates to field of semiconductor technology, in particular to a kind of figure light shield contact hole defect inspection method.
Background technique
As the development of integrated circuit technology and critical size are scaled, semiconductor technology also becomes increasingly complex,
In the R & D of complex that minimum feature is 28nm, the point defect on figure light shield is to make the maximum of product or more line conduction
It hinders.There are two types of the method for traditional test pattern mask defect is general:
First, light shield is found out by OPC (Optical Proximity Correction, optics close on amendment) calculating and is lacked
Point, but due to the promotion of figure light shield complexity, OPC can not calculate the disadvantage on all types of figure light shields；
Second, by photoetching energy/focal length matrix to contact hole defects detection on wafer, is then observed and confirmed by SEM
Light shield disadvantage, such method can relatively efficiently come out figure defect inspection in other graph layers, but apertures
Cavernous structure in the graph layer of hole, such as contact hole and connecting hole etc., there are larger drawbacks for such method, because in process window
In range, although such method can detecte out contact of the metal deposited in contact hole bridging or contact hole with lower circuit and lack
It loses, but is difficult detected that perhaps verification and measurement ratio is very low or is difficult to similar figure mask defects such as contact hole deformations
It is identified by engineering judgement.
Summary of the invention
The invention proposes a kind of figure light shield contact hole defect inspection methods, for solving in the prior art to figure light
The defects of bore deformation is contacted in the cover low problem of verification and measurement ratio.
In order to achieve the above objectives, the present invention provides a kind of figure light shield contact hole defect inspection method, comprising the following steps:
Wafer photolithography: being gone out the position of contact hole using figure light shield by step 1, and makes the contact hole forming, to described
Deposited metal forms metal bolt in contact hole；
Step 2: carrying out electronics beam scanning to the wafer that step 1 is formed, and records the position of each contact hole and each
The amount of electrons that contact hole is reflected back；
Step 3: in the simulation-analysis software in information input wafer detector that step 2 is recorded, according to exposure
Striation part, the amount of electrons being reflected back to contact hole each in step 2 makees weight calculation, and according to craft precision, determination will find out figure
Shape light shield contacts the number G of hole defect, then in weight calculation, the highest preceding G contact hole of score value is then labeled as defect contact
Hole, the contact hole on the corresponding figure light shield of the defect contact hole is then defective contact hole in figure light shield.
Preferably, conditions of exposure described in step 3 includes exposure energy, in exposure focal length, each contact hole and wafer
The crystal grain condition of the distance between the distance of the heart, two neighboring contact hole and each contact hole whereabouts.
Preferably, wafer is divided into several exposure areas, to every after exposing in step 3 to each exposure area
The amount of electrons that a contact hole is reflected back makees weight calculation.
Preferably, contact hole all in each exposure area is classified according to design rule, by each exposure area
The contact hole symmetrical about crystal circle center is as one group of contact hole in the middle other contact hole of same class, to every group of contact hole
The amount of electrons being reflected back make weight calculation.
Preferably, the parameter of the weight calculation further includes the number of defect occur in every group of contact hole.
Preferably, the design rule include each contact hole aperture, with the distance between adjacent contact hole and phase
The distance between adjacent line road.
Preferably, score value in weight calculation in step 3Wherein (xm, ym) be
Figure light shield contacts position coordinates of the hole defect on figure light shield, and m is m kind pattern classes；
anFor the figure complexity coefficient of figure light shield；
C in energy focal length relational matrix on wafer it is each contact hole defect used energy and setting process critical
Step quantity between energy or in energy focal length relational matrix on wafer each contact hole defect institute using focal length with set
Step quantity between fixed process critical focal length；
KnFor n-th group energy/focus condition wafer conditional coefficient；
RnFor (x under n-th group energy/focus conditionm, ym) contact hole there is the number of defect.Preferably, step 3
In find out figure light shield contact hole defect after, pass through transmission electron microscope observation figure light shield and confirm figure light shield contact
Hole defect.
Preferably, the metal deposited in the contact hole is tungsten, the metal bolt is tungsten bolt.
Compared with prior art, the beneficial effects of the present invention are: the present invention provides a kind of figure light shield contact hole defect inspection
Survey method is scanned using electron beam to by the contact hole formed after figure light shield photoetching, is connect when then scanning by each
Conditions of exposure synthesis where amount of electrons that contact hole is reflected back and each contact hole makees weight calculation, according to craft precision, really
The highest preceding G contact hole of score value is labeled as defective contact by the number G that find out figure light shield contact hole defect surely
Hole is that the figure light shield contacts hole defect in place of above-mentioned contact hole is corresponding on figure light shield.The above method, it is only necessary to use figure
The exposure of shape light shield is primary, and electronics beam scanning is used on wafer, can input in corresponding analysis software and be calculated, letter
Folk prescription is just.And due to being that weight analysis calculates, conditions of exposure is taken into account, therefore Detection accuracy greatly promotes.
Detailed description of the invention
Fig. 1 is the flow chart for the figure light shield contact hole defect inspection method that one embodiment of the invention provides；
Fig. 2 be one embodiment of the invention provide as the negative growth of focal length exposes the contact hole variation diagram to be formed；
Fig. 3 provides for one embodiment of the invention using progress figure light shield contact hole defect inspection method in KLA board
Flow chart.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
Fig. 1 is please referred to, the present invention provides a kind of figure light shield contact hole defect inspection method, comprising the following steps:
Step 1: providing a wafer, could be formed with well known device architecture, e.g. MOSFET etc. on the wafer,
Contact hole is formed by photoetching process on wafer using a figure light shield, and forms metal bolt (also known as in the contact hole
Metal plug), the metal bolt corresponds to its device architecture to be electrically connected, generally, the source formed on metal bolt wafer
Pole or gate contact, and form electrical connection；Metal used in the present embodiment is tungsten, then the metal bolt formed is tungsten bolt,
It should be understood that the metal bolt is not limited to tungsten bolt, metal bolt can also be formed using other metals such as copper or aluminium etc.；This reality
Applying so-called photoetching process in example includes the techniques such as photoresist coating, mask, exposure, etching and photoresist lift off, photoresist with
For positive photoresist；In the present embodiment, gold can be deposited on the wafer for be formed with contact hole by physical gas-phase deposition
Belong to, the metal for then removing rest part only retains the metal in contact hole and forms metal bolt；
Step 2: carrying out electronics beam scanning to the wafer that step 1 is formed, and records the position of each contact hole and each
The amount of electrons that contact hole is reflected back, for flawless contact hole, after its inner hole deposition product tungsten, tungsten can be with lower layer
Source electrode or gate turn-on, for defective contact hole, after its inner hole deposition product tungsten, the source electrode of tungsten and lower layer or
Person's grid can not then be connected or poor flow, thus to wafer carry out electronics beam scanning after, flawless contact hole is reflected
The amount of electrons that is reflected of amount of electrons and defective contact hole it is not identical, then under an optical microscope, defective contact
The brightness in hole and the brightness of most flawless contact hole for being located at its periphery are different, therefore brightness are had different
Contact hole record；
Step 3: in the simulation-analysis software in information input wafer detector that step 2 is obtained, according to exposure item
Part, the amount of electrons being reflected back to contact hole each in step 2 makees weight calculation, then in weight calculation, score value is highest several
A (e.g. preceding ten) contact hole then regards as defect contact hole, the contact on the corresponding figure light shield of the defect contact hole
Defective contact hole in Kong Zewei figure light shield.
Specifically, there is the calculating factor that the number of repetition of defect is all weight calculation in conditions of exposure and contact hole.
The conditions of exposure include exposure energy, exposure distance, each contact hole at a distance from crystal circle center, it is two neighboring
The crystal grain condition of the distance between contact hole and each contact hole whereabouts.
The number of repetition that defect occurs in contact hole refers to: wafer being divided into several exposure areas, by all exposure regions
Classify in domain according to design rule, so-called design rule is when designing the figure light shield, and each contact hole is set
Forbid being laid out other contact holes or route, each contact hole and exposure region in meter aperture and the much ranges in contact hole center
The distance etc. on domain boundary, design rule in each exposure area is same or similar and about the symmetrical contact hole of crystal circle center
Labeled as one group of contact hole, there is the contact hole for belonging to same group in different namely defective contact hole to look in the brightness of above-mentioned record
Out, a defective contact hole of G (G >=0) is had found in same group of contact hole, then by the number of repetition of defect in this group of contact hole
Labeled as G.
In addition, the same figure light shield also can be used, changes different conditions of exposures and expose respectively, referring to figure 2., according to
Arrow direction from left to right, using the same figure light shield, is exposed respectively under conditions of exposure focal length is negative incremental, is calculated each
The number of repetition that defect occurs in each group of contact hole formed after exposure.
After weight calculation, gives every group of contact hole and given a mark, the score value given such as the good contact hole of conditions of exposure
Higher, the score value that the number of repetition height that every group of contact hole defect occurs then is given is also high, finally connects highest preceding ten groups of score value
Contact hole marks, and the contact hole on the corresponding figure light shield of ten groups of contact holes is figure light shield contact hole defect.In Fig. 2,
The less defect score value of frequency of occurrence is lower, then determines that it is random defect, and if there is the more defect of number, some may
As gradually changing for focal length could gradually appear figure mask defect, such as the mask defect in figure, negative with focal length is passed
Increase, continuous to occur at least twice, then its score value is higher, can determine that it for mask defect.
According to above-mentioned calculation method, score value in weight calculation in the present inventionWherein
(xm, ym) it is that figure light shield contacts position coordinates of the hole defect on figure light shield, m is m kind pattern classes, the pattern classes
It is also to be classified by design rule；
anFor the figure complexity coefficient of figure light shield, pattern density is higher, and the numerical value is bigger；
C in energy focal length relational matrix on wafer it is each contact hole defect used energy and setting process critical
Step quantity between energy or in energy focal length relational matrix on wafer each contact hole defect institute using focal length with set
Step quantity between fixed process critical focal length；Energy focal length relational matrix therein specifically: the basis on each wafer
The exposure figure and craft precision to be exposed all can determine whether that a focal length and energy mutually restrict the matrix relationship of formation, energy
When amount adjustment, then focal length when exposing is also required to be adjusted accordingly, and guarantees exposure accuracy, meanwhile, when adjustment, it all can determine whether one
Process critical energy and process critical focal length, then adjustment carries out numerical value tune around process critical energy or process critical focal length
Whole, the step quantity is the difference referred between numerical value and process critical energy or the numerical value of focal length adjusted；
Wherein n is exactly to form n group energy/focal length parameter after process critical energy and process critical Focussing
Condition；
KnFor the wafer conditional coefficient under n-th group energy/focus condition, when contact hole defect and process critical energy or
The step number of focal length is bigger, then the value is bigger；
RnFor (x under n-th group energy/focus conditionm, ym) contact hole there is the number of repetition of defect.
According to above-mentioned score value calculation formula, each contact hole marking is given, it is highest n first to obtain score value, regards as figure
The contact hole defect of shape light shield.
Hole defect is contacted for figure light shield obtained above, needs to confirm its defect using transmission electron microscope observation
Situation.
Referring to figure 3., wafer detector used in the present embodiment is the wafer detector of U.S. KLA company production, is made
The simulation-analysis software is PWQ method software, specific manifestation are as follows:
Step S1: using after electronics beam scanning, the relevant information of record then forms Klarf file E1, in this document
Describe the information of contact hole defect distribution in each exposure area；
Step S2: wafer is placed on KLA board, can carry out optical scanner in existing KLA board to wafer, and
PWQ method software can modify the parameter of KLA board optical scanner, therefore using PWQ method software to KLA board optical scanner
Parameter is modified and is adjusted, and then carries out optical scanner to wafer, detects the defect on wafer, generates Klarf file K1；
Step S3: importing and replacing in Klarf file K1 about the information for contacting hole defect in Klarf file E1 is connect
The information of contact hole defect, the available Klarf text of PWQ method software in wafer detector available in this way i.e. KLA board
Part P1, because in Klarf file K1 and not including defect to be applied needed for the PWQ software for including in Klarf file E1 is analyzed
Number of repetition, figure light shield each exposure area in the comparison of design rule and the letter such as condition of crystal grain where contact hole
Breath can be converted the available analysis document of KLA board after generating file P1；
Step S4: weight calculation is carried out to above-mentioned analysis document using weight calculation formula provided by the invention, is being calculated
When can test by PWQ software, to find out the contact hole defect of figure light shield；
Step S5: observing figure light shield using transmission electron microscope, confirms the figure light shield contact hole found out
Defect.
The present invention provides a kind of figure light shield contact hole defect inspection method, using electron beam to by figure light shield photoetching
The contact hole formed afterwards is scanned, where the amount of electrons for being reflected back each contact hole when then scanning and each contact hole
Conditions of exposure synthesis make weight calculation, according to craft precision, determination to find out figure light shield contact hole defect number n, will
The highest preceding n contact hole of the score value being calculated is labeled as defective contact hole, and above-mentioned contact hole is on figure light shield
Corresponding place is that the figure light shield contacts hole defect.The above method, it is only necessary to be exposed once using figure light shield, be made on wafer
It is scanned with electron beam, can input in corresponding analysis software and be calculated, it is simple and convenient.And due to being weight analysis meter
It calculates, conditions of exposure is taken into account, therefore Detection accuracy greatly promotes.
Above-described embodiment is described in the present invention, but the present invention is not limited only to above-described embodiment.Obvious this field
Technical staff can carry out various modification and variations without departing from the spirit and scope of the present invention to invention.If in this way, this hair
These bright modifications and variations within the scope of the claims of the present invention and its equivalent technology, then the invention is also intended to include
Including these modification and variations.
Claims (7)
1. a kind of figure light shield contact hole defect inspection method, which comprises the following steps:
Wafer photolithography: being gone out the position of contact hole using figure light shield by step 1, and makes the contact hole forming, to the contact
Inner hole deposition product metal forms metal bolt；
Step 2: to step 1 formed wafer carry out electronics beam scanning, record each contact hole position and each contact
The amount of electrons that hole is reflected back；
Step 3: in the simulation-analysis software in information input wafer detector that step 2 is recorded, according to exposure item
Part, the amount of electrons being reflected back to contact hole each in step 2 makees weight calculation, and according to craft precision, determination will find out figure light
The number G of cover contact hole defect, then in weight calculation, the highest preceding G contact hole of score value is then labeled as defect contact hole, institute
The contact hole stated on the corresponding figure light shield of defect contact hole is then defective contact hole in figure light shield, and wafer is divided into
Weight calculation, weight are made to the amount of electrons that each contact hole is reflected back after exposing to each exposure area in several exposure areas
Score value in calculatingWherein (xm, ym) it is that figure light shield contacts hole defect on figure light shield
Position coordinates, m is m kind pattern classes；
anFor the figure complexity coefficient of figure light shield；
C in energy focal length relational matrix on wafer it is each contact hole defect used energy and setting process critical energy
Between step quantity or in energy focal length relational matrix on wafer it is each contact use the focal length of hole defect with set
Step quantity between process critical focal length；
KnFor n-th group energy/focus condition wafer conditional coefficient；
RnFor (x under n-th group energy/focus conditionm, ym) contact hole there is the number of defect.
2. figure light shield contact hole defect inspection method as described in claim 1, which is characterized in that exposed described in step 3
Condition includes exposure energy, and exposure focal length, each contact hole are at a distance from crystal circle center, the distance between two neighboring contact hole
And the crystal grain condition of each contact hole whereabouts.
3. figure light shield contact hole defect inspection method as described in claim 1, which is characterized in that will be in each exposure area
All contact holes are classified according to design rule, by each exposure area in the other contact hole of same class about crystal circle center
Symmetrical contact hole makees weight calculation as one group of contact hole, to the amount of electrons of every group of contact hole being reflected back.
4. figure light shield contact hole defect inspection method as claimed in claim 3, which is characterized in that the meter of the weight calculation
Calculating index further includes the number of defect occur in every group of contact hole.
5. figure light shield contact hole defect inspection method as claimed in claim 3, which is characterized in that the design rule includes
The distance between the aperture of each contact hole and adjacent contact hole and the distance between adjacent lines.
6. figure light shield contact hole defect inspection method as described in claim 1, which is characterized in that find out figure in step 3
After light shield contacts hole defect, passes through transmission electron microscope observation figure light shield and confirm that figure light shield contacts hole defect.
7. figure light shield contact hole defect inspection method as described in claim 1, which is characterized in that deposition in the contact hole
Metal be tungsten, the metal bolt be tungsten bolt.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611089543.0A CN106371284B (en) | 2016-11-30 | 2016-11-30 | Figure light shield contact hole defect inspection method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611089543.0A CN106371284B (en) | 2016-11-30 | 2016-11-30 | Figure light shield contact hole defect inspection method |
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| CN106371284A CN106371284A (en) | 2017-02-01 |
| CN106371284B true CN106371284B (en) | 2019-11-26 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108107059B (en) * | 2017-11-16 | 2021-03-05 | 上海华力微电子有限公司 | Detection structure and detection method for tungsten plug defects at bottom of contact hole |
| CN111524826B (en) * | 2020-04-30 | 2022-10-04 | 华虹半导体(无锡)有限公司 | Method for detecting critical dimension of contact hole, storage medium and equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295130A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Light shield detecting method |
| CN102385649A (en) * | 2010-08-25 | 2012-03-21 | 台湾积体电路制造股份有限公司 | Rendered database image-to-inspection image optimization for inspection |
| CN103913943A (en) * | 2014-04-08 | 2014-07-09 | 上海华力微电子有限公司 | Photomask detection method |
| CN105511222A (en) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
-
2016
- 2016-11-30 CN CN201611089543.0A patent/CN106371284B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295130A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Light shield detecting method |
| CN102385649A (en) * | 2010-08-25 | 2012-03-21 | 台湾积体电路制造股份有限公司 | Rendered database image-to-inspection image optimization for inspection |
| CN103913943A (en) * | 2014-04-08 | 2014-07-09 | 上海华力微电子有限公司 | Photomask detection method |
| CN105511222A (en) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
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