CN106371284A - Graphic photomask contact hole defect detection method - Google Patents
Graphic photomask contact hole defect detection method Download PDFInfo
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- CN106371284A CN106371284A CN201611089543.0A CN201611089543A CN106371284A CN 106371284 A CN106371284 A CN 106371284A CN 201611089543 A CN201611089543 A CN 201611089543A CN 106371284 A CN106371284 A CN 106371284A
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- Prior art keywords
- contact hole
- light shield
- defect
- wafer
- contact
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention provides a graphic photomask contact hole defect detection method which comprises the following steps: photoetching a graphic photomask by using electron beams, and scanning the formed contact holes; performing integrated weight calculation on the electron quantity returned by each contact hole and the exposure condition in which each contact hole is positioned during scanning, determining the number G of to-be-found graphic photomask contact hole defects according to the process precision, and marking the previous G contact holes with the highest score as defective contact holes, wherein the defects of the contact holes at the corresponding positions on the graphic photomask refer to the graphic photomask contact hole defects. According to the method, the graphic photomask needs to be exposed once only, is scanned on a wafer by using the electron beams, and then can be input into corresponding analysis software for calculation, and the operation is simple and convenient. Moreover, because weight analysis calculation is performed and the exposure condition is also considered, the detection accuracy is greatly improved.
Description
Technical field
The present invention relates to field of semiconductor technology, particularly to a kind of figure light shield contact hole defect inspection method.
Background technology
Development and critical size with integrated circuit technology are scaled, and semiconductor technology also becomes increasingly complex,
In minimum feature for, in the R ＆ D of complex of 28nm, the point defect on figure light shield is the maximum making the upper and lower line conduction of product
Hinder.The method of traditional test pattern mask defect typically has two kinds:
First, light shield is found out by opc (optical proximity correction, optics closes on correction) calculating and lacks
Point, but the lifting due to figure light shield complexity, opc cannot calculate the shortcoming on all types of figure light shields；
Second, by photoetching energy/focal length matrix to contact hole defects detection on wafer, then observed by sem and confirm
Light shield shortcoming, this kind of method other graph layers can relatively efficiently by figure defect inspection out, but apertures
Cavernous structure in the graph layer of hole, such as contact hole and connecting hole etc., there is larger drawback in this kind of method, because in process window
In the range of, although this kind of method can detect that the contact with lower circuit for the metal of contact hole bridging or contact in the hole deposition is scarce
Lose, but the figure mask defect that contact hole deformation etc. is similar to is difficult to detect or verification and measurement ratio is very low, or be difficult to
Identified by engineering judgement.
Content of the invention
The present invention proposes a kind of figure light shield contact hole defect inspection method, for solving in prior art to figure light
The low problem of defects detection rate such as contact bore deformation in cover.
For reaching above-mentioned purpose, the present invention provides a kind of figure light shield contact hole defect inspection method, comprises the following steps:
Step one: using figure light shield, wafer photolithography is gone out the position of contact hole, and make described contact hole forming, to described
Contact in the hole deposited metal forms metal bolt；
Step 2: the wafer that step one is formed carries out electron beam scanning, record the position of each contact hole and each
The amount of electrons that contact hole is reflected back；
Step 3: in the simulation-analysis software in the information input wafer detector that step 2 record is obtained, according to exposure
Optical condition, the amount of electrons that each contact hole in step 2 is reflected back makees weight calculation, and according to craft precision, determination will find out figure
Shape light shield contacts number g of hole defect, then, in weight calculation, before score value highest, g contact hole is then labeled as defect contact
Hole, the contact hole on the corresponding figure light shield of described defect contact hole then contacts hole defect for figure light shield.
Preferably, conditions of exposure described in step 3 includes exposure energy, in exposure focal length, each contact hole and wafer
The distance between the distance of the heart, two neighboring contact hole and the crystal grain condition of each contact hole whereabouts.
Preferably, wafer is divided into several exposure areas, to every after exposing to each exposure area in step 3
The amount of electrons that individual contact hole is reflected back makees weight calculation.
Preferably, contact hole all of in each exposure area is classified according to design rule, by each exposure area
With regard to the symmetrical contact hole of crystal circle center as one group of contact hole in the other contact hole of middle same class, to every group of contact hole
The amount of electrons being reflected back make weight calculation.
Preferably, the parameter of described weight calculation also includes the number of times defect in every group of contact hole.
Preferably, described design rule includes the distance between the aperture of each contact hole and adjacent contact hole and phase
The distance between adjacent line road.
Preferably, score value in weight calculation in step 3Wherein (xm, ym) be
Figure light shield contacts position coordinateses on figure light shield for the hole defect, and m is m kind pattern classes；
anFigure complexity coefficient for figure light shield；
C is each contact used energy of hole defect and the process critical setting on wafer in energy focal length relational matrix
In step quantity between energy or wafer in energy focal length relational matrix each contact hole defect institute using focal length with set
Step quantity between fixed process critical focal length；
knWafer conditional coefficient for n-th group energy/focus condition；
rnFor (x under n-th group energy/focus conditionm, ym) contact hole the number of times of defect occurs.Preferably, step 3
In find out figure light shield contact hole defect after, by transmission electron microscope observation figure light shield and confirm figure light shield contact
Hole defect.
Preferably, the metal of described contact in the hole deposition is tungsten, described metal bolt is tungsten bolt.
Compared with prior art, the invention has the beneficial effects as follows: the present invention provides a kind of contact hole defect inspection of figure light shield
Survey method, it is scanned to the contact hole being formed after figure light shield photoetching using electron beam, when then scanning connects each
Amount of electrons that contact hole is reflected back and the conditions of exposure that each contact hole is located comprehensively make weight calculation, according to craft precision, really
Surely number g that figure light shield contacts hole defect to be found out, g contact hole before score value highest is labeled as defective contact
Hole, is this figure light shield contact hole defect in place of above-mentioned contact hole is corresponding on figure light shield.Said method is it is only necessary to use figure
Shape light shield exposes once, using electron beam scanning on wafer, you can inputs in corresponding analysis software and carries out calculating, letter
Folk prescription is just.And due to being that weight analysis calculate, conditions of exposure is taken into account, therefore Detection accuracy greatly promotes.
Brief description
The flow chart of the figure light shield contact hole defect inspection method that Fig. 1 provides for one embodiment of the invention；
The contact hole variation diagram that Fig. 2 is formed for the negative growth exposure with focal length that one embodiment of the invention provides；
Fig. 3 provides using carrying out figure light shield contact hole defect inspection method in kla board for one embodiment of the invention
Flow chart.
Specific embodiment
Understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Refer to Fig. 1, the present invention provides a kind of figure light shield contact hole defect inspection method, comprises the following steps:
Step one: a wafer is provided, described wafer could be formed with known device architecture, e.g. mosfet etc.,
Contact hole is formed by photoetching process on wafer using a figure light shield, and forms metal bolt (also known as in described contact in the hole
Metal plug), described metal bolt corresponds to its device architecture to be electrically connected with, usually, the source of formation on metal bolt wafer
Pole or gate contact, and form electrical UNICOM；Used in the present embodiment, metal is tungsten, then the metal bolt being formed is tungsten bolt,
It should be understood that described metal bolt is not limited to tungsten bolt, metal bolt can also be formed using other metal such as copper or aluminum etc.；This reality
Apply alleged photoetching process in example and include the techniques such as photoresist coating, mask, exposure, etching and photoresist lift off, photoresist with
As a example positive photoresist；In the present embodiment, gold can be deposited on the wafer be formed with contact hole by physical gas-phase deposition
Belong to, the metal then removing remainder only retains the metal formation metal bolt of contact in the hole；
Step 2: the wafer that step one is formed carries out electron beam scanning, record the position of each contact hole and each
The amount of electrons that contact hole is reflected back, for flawless contact hole, after its in the hole deposition tungsten, tungsten can be with lower floor
Source electrode or gate turn-on, for defective contact hole, after its in the hole deposition tungsten, the source electrode of tungsten and lower floor or
Person's grid then cannot turn on or poor flow, therefore carries out after electron beam scanning to wafer, flawless contact hole is reflected
The amount of electrons that reflected with defective contact hole of amount of electrons and differ, then under an optical microscope, defective contact
The brightness in hole is differed with the brightness of the most flawless contact hole positioned at its periphery, therefore has brightness different
Contact hole record；
Step 3: in the simulation-analysis software in the information input wafer detector that step 2 is obtained, according to exposure bar
Part, the amount of electrons that each contact hole in step 2 is reflected back makees weight calculation, then, in weight calculation, score value highest is some
Individual (e.g. front ten) contact hole then regards as defect contact hole, the contact on the corresponding figure light shield of described defect contact hole
Kong Zewei figure light shield contacts hole defect.
Specifically, the number of repetition of defect and are all the calculating factor of weight calculation in conditions of exposure and contact hole.
Described conditions of exposure includes the exposure energy, distance of exposure distance, each contact hole and crystal circle center, two neighboring
The crystal grain condition of the distance between contact hole and each contact hole whereabouts.
The number of repetition that defect in contact hole refers to: wafer is divided into several exposure areas, by all exposure regions
Classified according to design rule in domain, so-called design rule is when designing to this figure light shield, and each contact hole sets
Forbid the other contact hole of layout or circuit, each contact hole and exposure region in meter aperture and the much scopes in contact hole center
The distance on domain border etc., will be same or like for design rule in each exposure area and with regard to the symmetrical contact hole of crystal circle center
It is labeled as one group of contact hole, have the contact hole belonging to same group in different namely defective contact hole to look in the brightness of above-mentioned record
Go out, in same group of contact hole, have found the individual defective contact hole of g (g >=0), then by the number of repetition of defect in this group contact hole
It is labeled as g.
Additionally, it is also possible to use same figure light shield, changing different conditions of exposures and exposing respectively, refer to Fig. 2, according to
The direction of arrow from left to right, using same figure light shield, exposes respectively under conditions of exposure focal length is born and is incremented by, calculates each
The number of repetition that in each group of contact hole being formed after exposure, defect occurs.
After weight calculation, give every group of contact hole and given a mark, the score value that as good contact hole in conditions of exposure gives
Higher, the score value that the number of repetition height of every group of contact hole defect appearance then gives is also high, finally connects ten groups before score value highest
Contact hole labelling, the contact hole on this corresponding figure light shield of ten groups of contact holes is figure light shield contact hole defect.In Fig. 2,
The less defect score value of occurrence number is relatively low, then determine that it is random defect, and if there is the more defect of number of times, some may
Gradually figure mask defect could be appeared with gradually changing of focal length, such as the mask defect of in figure, negative with focal length is passed
Increase, continuous occur at least twice, then its score value is higher, can determine that it is mask defect.
According to above-mentioned computational methods, score value in weight calculation in the present inventionWherein
(xm, ym) contacting position coordinateses on figure light shield for the hole defect for figure light shield, m is m kind pattern classes, this pattern classes
It is also to be classified by design rule；
anFor the figure complexity coefficient of figure light shield, pattern density is higher, and this numerical value is bigger；
C is each contact used energy of hole defect and the process critical setting on wafer in energy focal length relational matrix
In step quantity between energy or wafer in energy focal length relational matrix each contact hole defect institute using focal length with set
Step quantity between fixed process critical focal length；Energy focal length relational matrix therein particularly as follows: on each wafer basis
Exposure figure to be exposed and craft precision, all can determine whether that a focal length and energy mutually restrict the matrix relationship of formation, energy
During amount adjustment, then focal length when exposing is also required to be adjusted accordingly it is ensured that exposure accuracy, meanwhile, during adjustment, all can determine whether one
Process critical energy and process critical focal length, then adjust and carry out numerical value tune around process critical energy or process critical focal length
Whole, described step quantity is the difference between numerical value and process critical energy or the numerical value of focal length after referring to adjustment；
Wherein n is exactly to define n group energy and focal length ginseng around after process critical energy and process critical Focussing
Said conditions；
knFor the wafer conditional coefficient under n-th group energy/focus condition, when contact hole defect and process critical energy or
The step number of focal length is bigger, then this value is bigger；
rnFor (x under n-th group energy/focus conditionm, ym) contact hole the number of repetition of defect occurs.
According to above-mentioned score value computing formula, give the marking of each contact hole, obtain n item before score value highest, regard as figure
The contact hole defect of shape light shield.
Hole defect is contacted for figure light shield obtained above, needs to confirm its defect using transmission electron microscope observation
Situation.
Refer to Fig. 3, used in the present embodiment, wafer detector is the wafer detector that kla company of the U.S. produces, and makes
Described simulation-analysis software is pwq method software, is embodied in:
Step s1: after electron beam scanning, the relevant information of its record then defines klarf file e1, in this document
Describe the information of contact hole defect distribution in each exposure area；
Step s2: wafer is placed on kla board, in existing kla board, optical scanning can be carried out to wafer, and
Pwq method software can change the parameter of kla board optical scanning, therefore using pwq method software to kla board optical scanning
Parameter is modified and is adjusted, and then wafer is carried out with optical scanning, the defect on detection wafer, generates klarf file k1；
Step s3: will import and replace in klarf file k1 and connect with regard to contacting the information of hole defect in klarf file e1
The information of contact hole defect, so can obtain pwq method software available klarf literary composition in wafer detector i.e. kla board
Part p1, because do not comprise the defect of application required for the pwq software analysis comprising in klarf file e1 in klarf file k1
Number of repetition, the letter such as condition of the contrast of design rule and contact hole place crystal grain in each exposure area of figure light shield
Breath, after generating file p1, can be converted into kla board available analysis document；
Step s4: using the weight calculation formula that the present invention provides, weight calculation is carried out to above-mentioned analysis document, calculating
When can test by pwq software, thus finding out the contact hole defect of figure light shield；
Step s5: using transmission electron microscope, figure light shield is observed, confirm the figure light shield contact hole found out
Defect.
The present invention provides a kind of figure light shield contact hole defect inspection method, and it uses electron beam to by figure light shield photoetching
The contact hole being formed afterwards is scanned, and amount of electrons when then scanning being reflected back each contact hole and each contact hole are located
Conditions of exposure comprehensively make weight calculation, according to craft precision, determine and will find out number n that figure light shield contacts hole defect, will
Before calculated score value highest, n contact hole is labeled as defective contact hole, and above-mentioned contact hole is on figure light shield
It is this figure light shield contact hole defect in place of correspondence.Said method, it is only necessary to be exposed once using figure light shield, is made on wafer
With electron beam scanning, you can input in corresponding analysis software and carry out calculating, simple and convenient.And due to being weight analysis meter
Calculate, conditions of exposure is taken into account, therefore Detection accuracy greatly promotes.
The present invention is described to above-described embodiment, but the present invention is not limited only to above-described embodiment.Obvious this area
Technical staff invention can be carried out various change and modification without departing from the spirit and scope of the present invention.So, if this
These modifications bright and modification belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention be also intended to including
Including these changes and modification.
Claims (9)
1. a kind of figure light shield contact hole defect inspection method is it is characterised in that comprise the following steps:
Step one: using figure light shield, wafer photolithography is gone out the position of contact hole, and make described contact hole forming, to described contact
In the hole deposited metal forms metal bolt；
Step 2: the wafer that step one is formed carries out electron beam scanning, records position and each contact of each contact hole
The amount of electrons that hole is reflected back；
Step 3: in the simulation-analysis software in the information input wafer detector that step 2 record is obtained, according to exposure bar
Part, the amount of electrons that each contact hole in step 2 is reflected back makees weight calculation, and according to craft precision, determination will find out figure light
Number g of cover contact hole defect, then, in weight calculation, before score value highest, g contact hole is then labeled as defect contact hole, institute
The contact hole stated on defect contact hole corresponding figure light shield then contacts hole defect for figure light shield.
2. figure light shield contact hole defect inspection method as claimed in claim 1 is it is characterised in that expose described in step 3
Condition includes exposure energy, the distance between the distance of exposure focal length, each contact hole and crystal circle center, two neighboring contact hole
And the crystal grain condition of each contact hole whereabouts.
3. figure light shield contact hole defect inspection method as claimed in claim 1 it is characterised in that be divided into some by wafer
Individual exposure area, makees weight calculation to the amount of electrons after the exposure of each exposure area, each contact hole being reflected back in step 3.
4. figure light shield contact hole defect inspection method as claimed in claim 3 is it is characterised in that by each exposure area
All of contact hole according to design rule classify, by the other contact hole of same class in each exposure area with regard to crystal circle center
Symmetrical contact hole, as one group of contact hole, makees weight calculation to the amount of electrons being reflected back of every group of contact hole.
5. figure light shield contact hole defect inspection method as claimed in claim 4 is it is characterised in that the meter of described weight calculation
Calculate the number of times that index also includes defect in every group of contact hole.
6. figure light shield contact hole defect inspection method as claimed in claim 4 is it is characterised in that described design rule includes
The distance between the aperture of each contact hole and adjacent contact hole and the distance between adjacent lines.
7. the figure light shield contact hole defect inspection method as described in any one in claim 3～6 is it is characterised in that walk
Score value in weight calculation in rapid threeWherein (xm, ym) contact hole defect for figure light shield
Position coordinateses on figure light shield, m is m kind pattern classes；
anFigure complexity coefficient for figure light shield；
C is each contact used energy of hole defect and the process critical energy setting on wafer in energy focal length relational matrix
Between step quantity or wafer in energy focal length relational matrix on each contact use the focal length of hole defect and setting
Step quantity between process critical focal length；
knWafer conditional coefficient for n-th group energy/focus condition；
rnFor (x under n-th group energy/focus conditionm, ym) contact hole the number of times of defect occurs.
8. figure light shield contact hole defect inspection method as claimed in claim 1 is it is characterised in that find out figure in step 3
Light shield contact hole defect after, by transmission electron microscope observation figure light shield and confirm figure light shield contact hole defect.
9. figure light shield contact hole defect inspection method as claimed in claim 1 is it is characterised in that described contact in the hole deposits
Metal be tungsten, described metal bolt be tungsten bolt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611089543.0A CN106371284B (en) | 2016-11-30 | 2016-11-30 | Figure light shield contact hole defect inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611089543.0A CN106371284B (en) | 2016-11-30 | 2016-11-30 | Figure light shield contact hole defect inspection method |
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| CN106371284A true CN106371284A (en) | 2017-02-01 |
| CN106371284B CN106371284B (en) | 2019-11-26 |
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| CN201611089543.0A Active CN106371284B (en) | 2016-11-30 | 2016-11-30 | Figure light shield contact hole defect inspection method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108107059A (en) * | 2017-11-16 | 2018-06-01 | 上海华力微电子有限公司 | A kind of detection structure and detection method of contact hole bottom tungsten bolt defect |
| CN111524826A (en) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | Method for detecting critical dimension of contact hole, storage medium and equipment |
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| CN101295130A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Light shield detecting method |
| CN102385649A (en) * | 2010-08-25 | 2012-03-21 | 台湾积体电路制造股份有限公司 | Rendered database image-to-inspection image optimization for inspection |
| CN103913943A (en) * | 2014-04-08 | 2014-07-09 | 上海华力微电子有限公司 | Photomask detection method |
| CN105511222A (en) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
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2016
- 2016-11-30 CN CN201611089543.0A patent/CN106371284B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101295130A (en) * | 2007-04-24 | 2008-10-29 | 中芯国际集成电路制造(上海)有限公司 | Light shield detecting method |
| CN102385649A (en) * | 2010-08-25 | 2012-03-21 | 台湾积体电路制造股份有限公司 | Rendered database image-to-inspection image optimization for inspection |
| CN103913943A (en) * | 2014-04-08 | 2014-07-09 | 上海华力微电子有限公司 | Photomask detection method |
| CN105511222A (en) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108107059A (en) * | 2017-11-16 | 2018-06-01 | 上海华力微电子有限公司 | A kind of detection structure and detection method of contact hole bottom tungsten bolt defect |
| CN108107059B (en) * | 2017-11-16 | 2021-03-05 | 上海华力微电子有限公司 | Detection structure and detection method for tungsten plug defects at bottom of contact hole |
| CN111524826A (en) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | Method for detecting critical dimension of contact hole, storage medium and equipment |
| CN111524826B (en) * | 2020-04-30 | 2022-10-04 | 华虹半导体(无锡)有限公司 | Method for detecting critical dimension of contact hole, storage medium and equipment |
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| Publication number | Publication date |
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| CN106371284B (en) | 2019-11-26 |
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