CN105511222B - The defect-restoration method therefor and light shield of light shield - Google Patents

The defect-restoration method therefor and light shield of light shield Download PDF

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CN105511222B
CN105511222B CN201410542511.6A CN201410542511A CN105511222B CN 105511222 B CN105511222 B CN 105511222B CN 201410542511 A CN201410542511 A CN 201410542511A CN 105511222 B CN105511222 B CN 105511222B
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light shield
defect
sem
defects
method therefor
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CN105511222A (en
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施维
任快侠
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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Abstract

This application discloses a kind of defect-restoration method therefor of light shield and light shields.Wherein, which includes: to open the raw data file of light shield to obtain the original figure of light shield, and pass through amendment original figure to obtain the reference pattern of light shield;Part light shield is scanned using scanning machine, to obtain the SEM figure of mask defect;Reference pattern and SEM figure are compared, to position the position of the defects of light shield;Repair the defects of light shield.This method obtains the reference pattern of light shield from the raw data file of light shield, thus this method can obtain the reference pattern of any light shield, to solve the problems, such as the reference pattern for being difficult to find that light shield.

Description

The defect-restoration method therefor and light shield of light shield
Technical field
This application involves the technical fields of semiconductor integrated circuit, in particular to a kind of defect repair side of light shield Method and light shield.
Background technique
In the manufacturing process of semiconductor integrated circuit, the position using light shield definition circuit figure is needed, is then passed through Litho machine carries out photoengraving to the circuitous pattern projected, to form required device on a semiconductor substrate.Form the side of light shield Method includes: firstly, successively plating one layer of crome metal and photoresists along the direction far from quartz glass on quartz glass;Then, Designed circuitous pattern is exposed on photoresists by electronic laser equipment;Finally, the pattern etch in photoresists Crome metal is to form circuitous pattern.This method would generally introduce defect in formed light shield, such as expose when etching crome metal The particle etc. being infected in a little environment in energy unevenness or crome metal can introduce defect in being formed by light shield, so that Figure generates error in light shield.
Usually the defect on light shield is repaired in the prior art, to reduce pattern error in light shield, and obtain in accordance with The light shield of design requirement.Currently, generally being repaired using graphic correlation method to the defects of light shield to be repaired.The reparation side Method is the following steps are included: firstly, obtain other normal regions in normal light shield (light shield without defect) or light shield to be repaired SEM figure, and using this SEM figure as reference pattern;Then, light shield to be repaired is scanned using scanning machine, with Obtain the SEM figure of light shield to be repaired;Next, the SEM figure of reference pattern and light shield to be repaired is compared, with determination The defects of light shield to be repaired position, and then confirm the position for needing to repair;Finally, being repaired to the defects of light shield to be repaired It is multiple.
However, especially there is the light of lesser characteristic size, lesser defect standard for some unique light shields Cover, it is understood that there may be a normal light shield (light shield without defect) can not be obtained.The side that such light shield to be repaired is repaired In method, it is difficult to find suitable reference pattern, so that the restorative procedure of light shield to be repaired cannot achieve.Meanwhile existing reparation side It is usually that the SEM figure of the raw data file observed by the naked eye with to light shield and light shield to be repaired compares in method, because The position of the defects of this acquired light shield is often not accurate enough, affects the accuracy of reparation.In view of the above-mentioned problems, at present also There is no effective solution method.
Summary of the invention
The application is intended to provide the defect-restoration method therefor and light shield of a kind of light shield, in the defect-restoration method therefor to solve light shield The problem of being difficult to find that reference pattern.
To achieve the goals above, this application provides a kind of defect-restoration method therefor of light shield and light shield, the defect repairs Method includes: to open the raw data file of light shield to obtain the original figure of light shield, and pass through amendment original figure to obtain The reference pattern of light shield;Part light shield is scanned using scanning machine, to obtain the SEM figure of light shield;By reference pattern It is compared with SEM figure, to position the position of the defects of light shield;Repair the defects of light shield.
Further, in drawbacks described above restorative procedure, the step of correcting original figure includes: corresponding in interception original figure In the part of SEM figure as initial reference figure;The round and smooth processing in corner is carried out to initial reference figure and profile takes out side processing, To obtain middle reference figure;Processing is amplified to intermediate reference pattern, to obtain and the matched ginseng of SEM dimension of picture Examine figure.
Further, in drawbacks described above restorative procedure, obtain original figure the step of in, opening deposit in worktable window Raw data file in system is to obtain original figure.
Further, in drawbacks described above restorative procedure, obtain initial reference figure the step of in, interception side length be 2~4 μm Original figure as initial reference figure.
Further, in drawbacks described above restorative procedure, obtain middle reference figure the step of in, using worktable window system System carries out the round and smooth processing in corner to initial reference figure automatically and profile takes out side processing, to obtain middle reference figure.
Further, in drawbacks described above restorative procedure, obtain middle reference figure the step of include: using worktable window System carries out the round and smooth processing in corner to reference pattern, so that the vertical edges angle of initial reference figure forms fillet;Using workbench Windows system is round and smooth to corner, and treated that initial reference figure carries out profile takes out side processing, and to obtain corner, round and smooth treated The graph outline of initial reference figure, and using graph outline as middle reference figure.
Further, in drawbacks described above restorative procedure, in the step of positioning the position of the defects of light shield, SEM is schemed Shape copies in worktable window system to compare reference pattern and SEM figure.
Further, in drawbacks described above restorative procedure, the step of position of positioning the defects of light shield includes: will be with reference to figure Shape and SEM figure are overlapped;Reference pattern and SEM figure are compared to find out the defects of light shield;Obtain the defects of light shield Position coordinates, to position the position of the defects of light shield.
Further, in drawbacks described above restorative procedure, the method for repairing the defects of light shield be focused ion beam bombard or Ionic reaction deposition.
Further, in drawbacks described above restorative procedure, raw data file is GDS file.
Present invention also provides a kind of light shield, the above-mentioned defect-restoration method therefor of light shield the application is repaired.
Using the technical solution of the application, the original figure of light shield is obtained by the raw data file of opening light shield, And the reference pattern of light shield is obtained by amendment original figure, then the SEM figure of reference pattern and light shield is compared To position the position of the defects of light shield, to realize the purpose of the defects of repairing light shield.This method is from the original of light shield Data file obtains the reference pattern of light shield, thus this method can obtain the reference pattern of any light shield, to solve light The problem of being difficult to find that reference pattern in the defect-restoration method therefor of cover.Meanwhile the application is also by by SEM graph copying to work It in platform windows system, and is compared by automatic reference pattern and the SEM figure, to more accurately obtain in light shield Defective locations, and then the accuracy for the defects of improving light shield and repairing.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows the flow diagram of the defect-restoration method therefor of the light shield of the application embodiment offer;
Fig. 2 shows in the defect-restoration method therefor of the light shield of the application embodiment offer, the initial data of light shield is opened File passes through the reference pattern of light shield acquired in amendment original figure to obtain the original figure of light shield;
Fig. 3 shows the SEM figure for being scanned acquired light shield to part light shield using scanning machine;
Fig. 4 shows the schematic diagram after comparing reference pattern shown in Fig. 2 and SEM figure shown in Fig. 3;And
Fig. 5 shows the schematic diagram of the section structure of rear the formed light shield of the defects of repairing light shield.
Specific embodiment
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ", " ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction " Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and " in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and And respective explanations are made to the opposite description in space used herein above.
As described in background technique, in the method for repairing light shield, it is difficult to find suitable reference pattern, So that the restorative procedure of light shield cannot achieve.Present inventor studies regarding to the issue above, proposes a kind of light shield Defect-restoration method therefor.As shown in Figure 1, the defect-restoration method therefor includes: to open the raw data file of light shield to obtain light shield Original figure, and by amendment original figure to obtain the reference pattern of light shield;Part light shield is carried out using scanning machine Scanning, to obtain the SEM figure of light shield;Reference pattern and SEM figure are compared, to position the position of the defects of light shield It sets;Repair the defects of light shield.
Drawbacks described above restorative procedure passes through the raw data file for opening light shield to obtain the original figure of light shield, and passes through Original figure is corrected to obtain the reference pattern of light shield, then compares the SEM figure of reference pattern and light shield to position The position of the defects of light shield, to realize the purpose of the defects of repairing light shield.Initial data text of this method from light shield Part obtains the reference pattern of light shield, thus this method can obtain the reference pattern of any light shield, to solve lacking for light shield Fall into the problem of being difficult to find that reference pattern in restorative procedure.Meanwhile the application is also by by SEM graph copying to worktable window It in system, and is compared by automatic reference pattern and the SEM figure, to more accurately obtain the defects of light shield position The defects of set, and then improve light shield the accuracy repaired.
The illustrative embodiments according to the application are described in more detail below.However, these illustrative embodiments It can be implemented by many different forms, and should not be construed to be limited solely to embodiments set forth herein.It should These embodiments that are to provide understood are in order to enable disclosure herein is thoroughly and complete, and by these exemplary realities The design for applying mode is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands layer and region Thickness, and make that identical device is presented with like reference characters, thus description of them will be omitted.
Fig. 2 to Fig. 5 is shown in the restorative procedure of light shield provided by the present application, the matrix obtained after each step Schematic diagram.Below in conjunction with Fig. 2 to Fig. 5, the restorative procedure of light shield provided herein is further illustrated.
Firstly, open the raw data file of light shield to obtain the original figure of light shield, and by amendment original figure with The reference pattern of light shield is obtained, structure is as shown in Figure 2.Wherein, the format of raw data file can be common in this field Data format, in a preferred embodiment, raw data file be GDS (graph data stream format) file.Certainly, The format of raw data file can also be OASIS (open architecture interactive mode reference format) or International Electrical and Electronics Engineer The format that association (IEEE) is approved.It should be noted that as an example, the reference pattern of light shield shown in Fig. 2 is only schematic construction.
Meanwhile those skilled in the art can set according to teachings of the present application and be modified to above-mentioned original figure Method.In a preferred embodiment, the step of correcting original figure includes: to correspond to SEM in interception original figure to scheme The part of shape is as initial reference figure;The round and smooth processing in corner is carried out to initial reference figure and profile takes out side processing, to obtain Middle reference figure;Processing is amplified to intermediate reference pattern, to obtain the matched reference pattern of size with SEM figure. It should be noted that the method being modified to original figure can also be other methods, and it is only limitted to the preferred embodiment.
In the above-mentioned preferred embodiment being modified to original figure, raw data file can deposit in workbench In windows system.At this point, can open in the step of obtaining original figure and deposit in initial data in worktable window system File is to obtain original figure;It, can be using worktable window system automatically to first in the step of obtaining middle reference figure Beginning reference pattern carries out the round and smooth processing in corner and profile takes out side processing, to obtain middle reference figure.
In the step of obtaining above-mentioned initial reference figure, part original figure can be intercepted as initial reference figure. Preferably, the original figure that interception side length is 2~4 μm is as initial reference figure.When needing to repair entire light shield, Restorative procedure provided by the present application can be performed a plurality of times, and repeatedly the summation of intercepted part original figure covers in repair process All original figures.
In the step of obtaining above-mentioned intermediate reference pattern, the round and smooth processing in corner and profile are taken out side processing and can be regarded by workbench Window system is automatically performed.Preferably, the step of obtaining middle reference figure includes: using worktable window system to reference pattern The round and smooth processing in corner is carried out, so that the vertical edges angle of initial reference figure forms fillet;Using worktable window system to corner Round and smooth treated initial reference figure carries out profile and takes out side processing, to obtain round and smooth treated the initial reference figure in corner Graph outline, and using graph outline as middle reference figure.
It should be noted that those skilled in the art has the ability according to teachings of the present application, setting is regarded using workbench Window system carries out the round and smooth processing in above-mentioned corner and profile takes out the parameter of side processing.For example, the round and smooth degree in corner can be according to circle Slippery (i.e. the size of fillet, degree are bigger closer to circle) is defined, and those skilled in the art can justify according to setting The round and smooth degree in the size adjustment corner at angle.
It is that acquisition and the size of SEM figure are matched with reference to figure to the purpose that above-mentioned intermediate reference pattern amplifies processing Shape, in order to compare reference pattern and SEM figure, and convenient for the position of the defects of positioning light shield.Enhanced processing Multiple can be set according to the size between middle reference figure and reference pattern, and those skilled in the art has the ability The multiple of enhanced processing is set according to teachings of the present application.
The raw data file of opening light shield is completed to obtain the original figure of light shield, and by amendment original figure to obtain After the step of taking the reference pattern of light shield, part light shield is scanned using scanning machine, to obtain the SEM figure of light shield Shape, structure are as shown in Figure 3.Wherein, scanning machine can be CDSEM, certainly can also be other imaging devices.Using scanning Board obtain SEM figure operating method and operating parameter (such as vacuum degree, imaging multiplying power etc.) can according to the prior art into Row setting.It should be noted that as an example, the SEM figure of light shield shown in Fig. 3 is only schematic construction.
Simultaneously as containing defective in light shield, therefore defective part is also contained using the above-mentioned SEM figure that scanning machine obtains Divide (part for needing to repair).It, will be by scheming to reference pattern and SEM in the subsequent step of restorative procedure provided by the present application Shape is compared to position the position of the defects of light shield, then repairs the defects of light shield.
Complete to be scanned part light shield using scanning machine, the step of SEM figure to obtain light shield after, will join It examines figure and SEM figure compares, to position the position of the defects of light shield, base structure is as shown in Figure 4.In the step In, it can be by SEM graph copying into worktable window system, in order to compare reference pattern and SEM figure.
The method of the position of the defects of above-mentioned positioning light shield can be set according to the prior art.A kind of preferred In embodiment, the step of position of positioning the defects of light shield includes: to be overlapped reference pattern and SEM figure, so as to It is compared in by reference pattern and SEM figure;Reference pattern and SEM figure are compared to find out the defects of light shield;Obtain light The position coordinates of the defects of cover, to position the position of the defects of light shield.The mode for comparing reference pattern and SEM figure can be with To visually observe or defect detects automatically or the combination of both modes.
After the step of completion compares reference pattern and SEM figure, position to position the defects of light shield, repair The defects of light filling cover, and then obtain the light shield of structure as shown in Figure 5.The defects of light shield is usually to have recessed portion or protrusion The defect in portion, therefore the purpose for repairing the defects of light shield can be realized by way of filling recessed portion or removal protruding portion.
Preferably, the method for above-mentioned recessed portion is filled as ionic reaction deposition, removes the mode of above-mentioned protruding portion to focus Ion beam bombardment.The technological parameter of focused ion beam bombardment or ionic reaction deposition can be set according to the prior art, In This is repeated no more.Certainly, there are many kinds of the modes for filling recessed portion or removal protruding portion, is not limited in the preferred implementation side Formula.
Meanwhile present invention also provides a kind of light shield, which repairs through the above-mentioned defect-restoration method therefor of the application. The defects of the light shield is repaired, to reduce the pattern error in light shield, and then is improved and is defined electricity using the light shield The accuracy of the position of road figure finally improves the performance of formed device.
It can be seen from the above description that the application the above embodiments realize following technical effect:
(1) by opening the raw data file of light shield to obtain the original figure of light shield, and pass through amendment original figure To obtain the reference pattern of light shield, then the SEM figure of reference pattern and light shield is compared to position the defects of light shield Position, to realize the purpose of repairing the defects of light shield.
(2) this method obtains the reference pattern of light shield from the raw data file of light shield, thus this method can be appointed The reference pattern of what light shield, to solve the problems, such as to be difficult to find that reference pattern in the defect-restoration method therefor of light shield.
(3) this method also by by SEM graph copying into worktable window system, and pass through automatic reference pattern and institute It states SEM figure to compare, be repaired to the defects of more accurately obtain the defects of light shield position, and then improve light shield Accuracy.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.

Claims (10)

1. a kind of defect-restoration method therefor of light shield, which is characterized in that the defect-restoration method therefor includes:
The raw data file of light shield is opened to obtain the original figure of the light shield, and by correcting the original figure to obtain Take the reference pattern of the light shield;
The part light shield is scanned using scanning machine, to obtain the SEM figure of the light shield;
The reference pattern and the SEM figure are compared, to position the position of the defects of described light shield;
Repair the defects of described light shield;
The step of correcting the original figure include:
The part in the original figure corresponding to the SEM figure is intercepted as initial reference figure;
The round and smooth processing in corner is carried out to the initial reference figure and profile takes out side processing, to obtain middle reference figure;
Processing is amplified to the middle reference figure, to obtain and the matched reference pattern of the SEM dimension of picture.
2. defect-restoration method therefor according to claim 1, which is characterized in that in the step of obtaining the original figure, beat The raw data file deposited in worktable window system is opened to obtain the original figure.
3. defect-restoration method therefor according to claim 1, which is characterized in that the step of obtaining the initial reference figure In, the original figure that interception side length is 2~4 μm is as the initial reference figure.
4. defect-restoration method therefor according to claim 2, which is characterized in that the step of obtaining the middle reference figure In, the round and smooth processing in corner is carried out to the initial reference figure automatically using the worktable window system and profile is taken out at side Reason, to obtain the middle reference figure.
5. defect-restoration method therefor according to claim 4, which is characterized in that the step of obtaining middle reference figure packet It includes:
The round and smooth processing in corner is carried out to the reference pattern using the worktable window system, so that the initial reference figure Vertical edges angle formed fillet;
Using the worktable window system, round and smooth to the corner treated that the initial reference figure carries out profile takes out side Processing to obtain the graph outline of round and smooth treated the initial reference figure in the corner, and the graph outline is made For the middle reference figure.
6. defect-restoration method therefor according to claim 2, which is characterized in that in the position for positioning the defects of described light shield The step of in, by the SEM graph copying into the worktable window system with by the reference pattern and the SEM figure It compares.
7. defect-restoration method therefor according to claim 6, which is characterized in that position the position of the defects of described light shield Step includes:
The reference pattern and the SEM figure are overlapped;
The reference pattern and the SEM figure are compared to find out the defects of described light shield;
The position coordinates of the defects of described light shield are obtained, to position the position of the defects of described light shield.
8. defect-restoration method therefor according to any one of claim 1 to 7, which is characterized in that repair in the light shield The method of defect is that focused ion beam is bombarded or ionic reaction deposits.
9. defect-restoration method therefor according to any one of claim 1 to 7, which is characterized in that the raw data file For GDS file.
10. a kind of light shield, which is characterized in that the light shield is repaired through defect-restoration method therefor described in any one of claims 1 to 9 It forms again.
CN201410542511.6A 2014-10-14 2014-10-14 The defect-restoration method therefor and light shield of light shield Active CN105511222B (en)

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CN106371284B (en) * 2016-11-30 2019-11-26 上海华力微电子有限公司 Figure light shield contact hole defect inspection method
CN108257166B (en) * 2018-01-11 2022-03-04 上海华虹宏力半导体制造有限公司 Method for automatically matching simulation image of layout with silicon wafer SEM image
CN110727170B (en) * 2018-07-16 2023-12-01 中芯国际集成电路制造(上海)有限公司 Method for repairing defects of photomask and photomask
CN109023517B (en) * 2018-10-17 2020-09-01 哈尔滨工业大学 Method for eliminating surface defects of single crystal diamond seed crystal by using focused ion beam technology
CN112764307A (en) * 2019-11-06 2021-05-07 长鑫存储技术有限公司 Optical proximity effect correction method
CN111539955A (en) * 2020-05-28 2020-08-14 上海华力集成电路制造有限公司 Defect detection method
DE102021203075A1 (en) * 2021-03-26 2022-09-29 Carl Zeiss Smt Gmbh METHOD, DEVICE AND COMPUTER PROGRAM FOR REPAIRING A MASK DEFECT
CN116758073A (en) * 2023-08-17 2023-09-15 粤芯半导体技术股份有限公司 Mask plate data detection method and system

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