CN101311821A - Method for mending light shield graph with defect - Google Patents
Method for mending light shield graph with defect Download PDFInfo
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- CN101311821A CN101311821A CNA200710041109XA CN200710041109A CN101311821A CN 101311821 A CN101311821 A CN 101311821A CN A200710041109X A CNA200710041109X A CN A200710041109XA CN 200710041109 A CN200710041109 A CN 200710041109A CN 101311821 A CN101311821 A CN 101311821A
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Abstract
A method for mending an optical mask pattern with a defect comprises the procedures as follows: a layout pattern is shifted to an optical mask to form an optical mask pattern; the optical mask pattern with the defect on the optical mask and the position coordinate of the defect at any point are acquired; according the position coordinate at any point, the layout pattern corresponding to the optical mask pattern with the defect is led out; optical approximate mending is performed for the led-out layout pattern corresponding to the optical mask pattern with the defect; and after being mended, the layout pattern corresponding to the optical mask pattern with the defect is shifted to the optical mask to mend the optical mask pattern with the defect. With the procedures adopted, mending is easy and accurate.
Description
Technical field
The present invention relates to the technical field of lithography that semiconductor devices is made, particularly the method for mending light shield graph with defect.
Background technology
Along with the develop rapidly of semiconductor fabrication, semiconductor devices is in order to reach arithmetic speed faster, bigger data storage amount and more function, and semi-conductor chip develops to high integration direction more; And the integrated level of semi-conductor chip is high more, and (CD, Critical Dimension) is more little for the critical dimension of semiconductor devices, and therefore the making for light shield also requires high more.
Existing mask manufacturing cost height and long processing time, and because the light shield manufacture complexity increases, monolithic light shield cost is up to more than 1,000,000 yuan.The light shield manufacture process on transparency carrier 11, is coated with one deck chromium film 12 as shown in Figure 1 usually; Cover little shadow layer 14 with photoresist more thereon, with light shield layout software control optics directly write, electron-beam direct writing or scanning electron microscope (SEM, Scan Electron Microscopy) exposure method such as directly writes, go up at the photoresist layer (not shown) of light shield 10 and form pattern; Through behind the developing programs, on light shield, form a plurality of photoresist patterns; Then, serve as cover curtain etching chromium film 12 with this photoresist pattern after, form the light shield of patterning, the part that still covers chromium film 12 then is light tight pattern.Yet on carrying out light shield during the etching of pattern, often because be infected with particulate in a little environment on the light shield, exposure energy is uneven or excessively and the photoresist problem of materials, and produces band defective light mask image 14.
But because less feature pitch, smaller defect standard and need factor such as minimum transfer loss at repairing area, it is difficult to produce the light shield that does not have defective, and has increased the complicacy of processing procedure.Therefore, when the pattern generating error on the light shield, then develop and multiple little technology of repairing, use the needs of making light shield again, to reduce the light shield cost to repair the error of mask pattern.
Usually, the technology to the defective on the light shield is revised as shown in Figure 2, scans the figure on the light shield 100 with the light shield testing tool, finds to have a plurality of defective patterns 102 in the light shield 100; Around defective patterns 102, form repairing area 104, be used for determining the position of defective patterns 102.
As shown in Figure 3, sedimentary organic material carbon film or Cr (CO) in repairing area 104
6, in order to corrective pitting figure 102.
But because the critical dimension of semiconductor devices is more and more littler, and the shape of semiconductor devices also becomes increasingly complex, and therefore also do not have this simple circuitous pattern on light shield.
Therefore, the existing method that defective on the light shield is revised please refer to the described technical scheme of Taiwan patent TW567531.As shown in Figure 4, when producing band defective light mask image 21 on the light shield 20, with the light shield at band defective light mask image 20 places on seek no band defective light mask image 22 with band defective light mask image 21 identical shaped sizes; Copy to the no band defective light mask image 22 identical on the chromium film of band defective light mask image 21 as the reference pattern with band defective light mask image 21 shapes size; To remove with the chromium film of defective light mask image 21 positions with focused ion beam, band defective light mask image 21 is repaired complete.
Band defective light mask image method for repairing and mending on the existing mask is owing to directly will find on the light shield at band defective light mask image place and duplicate with the consistent no band defective light mask image of defective light mask image shape, to not have band defective light mask image as the reference pattern, with reference pattern band defective light mask image will be repaired then.(1) reference pattern is not compared and is had error with there being band defective light mask image, and this error adds the error of reference pattern itself, and under the more and more littler situation of critical dimension, the band defective light mask image after the repairing is may error bigger; (2) when wafer manufacturing, may there be the chip of repetition on a slice light shield, it is all different therefore can to produce each pattern, does not therefore also just have identical pattern to be replicated and is used for repairing; (3) when duplicating nothing band defective light mask image, need not scan repeatedly there being band defective light mask image with electron beam, this may produce the transparency carrier of light shield and injure, and influence the percent of pass of light.
Summary of the invention
The problem that the present invention solves provides a kind of method of mending light shield graph with defect, improves the precision that band defective light mask image is repaired; Prevent to duplicate and avoid electron beam that light shield is produced injury with the identical no band defective light mask image of defective light mask image the time.
For addressing the above problem, the invention provides a kind of method of mending light shield graph with defect, comprise the following steps: the layout figure is transferred to and form light mask image on the light shield; Obtain band defective light mask image and any some position coordinateses of defect part thereof on the light shield; According to the layout figure derivation that arbitrarily any position coordinates will band defective light mask image correspondence; Layout figure to the band defective light mask image correspondence that derives carries out the optical approximate correction; The layout figure of revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield.
Obtain band defective light mask image and any some position coordinateses of defect part with the light shield instruments of inspection.
With focused ion beam the layout figure of revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield, by the method mending light shield graph with defect of focused ion beam bombardment or ionic reaction deposition, described focused ion beam is for focusing on gallium ion beam.
From the raw data base of light shield domain, will derive with the layout figure of defective light mask image correspondence.
Described optical approximate is modified to optical parametric and graph data required when using optical approximate fixed software analogue exposure, development and etch process.
Compared with prior art, the present invention has the following advantages: the present invention will derive with the layout figure of defective light mask image correspondence according to any some position coordinateses of the defect part of band defective light mask image; Layout figure to the band defective light mask image correspondence that derives carries out the optical approximate correction; The layout figure of revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield.(1) direct layout figure with revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield, because not needing to duplicate flawless light mask image repairs, therefore can not produce the cumulative errors in the reproduction process, the band defective light mask image degree of accuracy height after the repairing; (2) direct layout figure with revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield, does not therefore have identical zero defect light mask image also can repair as the reference pattern, and repairs conveniently; (3) owing to do not need to duplicate zero defect light mask image process, therefore can not produce electron beam and not carry out scan condition repeatedly to there being band defective light mask image, the transparency carrier of light shield can not produce injury.
Description of drawings
Fig. 1 is the synoptic diagram that produces defective in the prior art light shield manufacture process;
Fig. 2 to Fig. 4 is the synoptic diagram that prior art is repaired band defective light mask image;
Fig. 5 is the process flow diagram that the specific embodiment of the invention is repaired band defective light mask image;
Fig. 6 to Fig. 8 is the specific embodiment of the invention forms pattern on light shield a process;
The synoptic diagram of Fig. 9 embodiment that to be the present invention repair the band defective light mask image on the light shield.
Embodiment
In the light shield manufacture process, because be infected with particulate in a little environment on the light shield, exposure energy inequality or photoresist problem of materials are easy to produce band defective light mask image.The present invention will be with defective light mask image data to derive according to the position coordinates of band defective light mask image; The band defective light mask image data that derive are carried out the optical approximate correction; According to the data modification band defective light mask image of revising.The present invention will derive with the layout figure of defective light mask image correspondence according to any some position coordinateses of the defect part of band defective light mask image; Layout figure to the band defective light mask image correspondence that derives carries out the optical approximate correction; The layout figure of revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield.(1) direct layout figure with revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield, because not needing to duplicate flawless light mask image repairs, therefore can not produce the cumulative errors in the reproduction process, the band defective light mask image degree of accuracy height after the repairing; (2) direct layout figure with revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield, does not therefore have identical zero defect light mask image also can repair as the reference pattern, and repairs conveniently; (3) owing to do not need to duplicate zero defect light mask image process, therefore can not produce electron beam and not carry out scan condition repeatedly to there being band defective light mask image, the transparency carrier of light shield can not produce injury.Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Fig. 5 is the process flow diagram that the specific embodiment of the invention is repaired band defective light mask image.As shown in Figure 5, execution in step S201 is transferred to the layout figure and forms light mask image on the light shield;
Execution in step S202 obtains band defective light mask image and any some position coordinateses of defect part thereof on the light shield.
In the present embodiment, the instrument that obtains band defective light mask image and coordinate thereof is light shield check board, for example the ARIS200 machine of the KT575 machine of section sky company or Applied Materials.
Execution in step S203 is according to layout figure derivation that arbitrarily any position coordinates will band defective light mask image correspondence;
In the present embodiment, at first according to any some position coordinateses of being with defective light mask image defect part, determine the position of band defective light mask image in the light shield domain, and then will from the raw data base of light shield domain, derive with the layout figure of defective light mask image correspondence.
The corresponding layout graphical format of the band defective light mask image of described derivation can be graph data stream format (GDS, Graphic Data Stream), the form of interactive standard format (OASIS, OpenArtwork System Interchange Standard) of open architecture or international Institute of Electrical and Electric Engineers (IEEE) approval.
Execution in step S204 carries out the optical approximate correction to the layout figure of the band defective light mask image correspondence of derivation;
In the present embodiment, optical approximate is modified to optical parametric and graph data required when using optical approximate fixed software analogue exposure, development and etch process.
Execution in step S205 is transferred to mending light shield graph with defect on the light shield with the layout figure of revised band defective light mask image correspondence.
In the present embodiment, by focused ion beam bombardment or ionic reaction deposition focused ion beam the layout figure of revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield, described focused ion beam is for focusing on gallium ion beam.
Fig. 6 to Fig. 8 is the specific embodiment of the invention forms pattern on light shield a process.As shown in Figure 6, layout figure at first; Then, on transparency carrier 30, form lighttight chromium rete 32 earlier; On chromium rete 32, increase chromium oxide layer, to form anti-reflecting layer 34; On anti-reflecting layer 34, cover photoresist 36; And with optics directly write, projection electron-beam direct writing or scanning electron microscope are directly write etc., and mode is exposed, the layout figure is transferred on photoresist 36, forms semiconductor pattern; Then photoresist is formed the patterning opening with developing process.As shown in Figure 7, serve as the curtain cover with the semiconductor pattern on the photoresist 36, with wet etching or electric paste etching method etching anti-reflecting layer 34 and chromium rete 32 formation light mask images.After anti-reflecting layer 34 and 32 etchings of chromium rete are finished, then remove photoresist 36.Can carry out the zone whether the light shield inspection has band defective light mask image 38 to exist and be with defective light mask image 38 places with check this moment.As shown in Figure 8, if there is band defective light mask image 38 to occur, any some position coordinateses of defect part according to band defective light mask image 38, determine the correspondence position layout figure of band defective light mask image 38 in the light shield domain, and then will from the raw data base of light shield domain, derive with the layout figure of defective light mask image 38 correspondences; Layout figure to band defective light mask image 38 correspondences that derive carries out the optical approximate correction; With focused ion beam the layout figure of revised band defective light mask image 38 correspondences is write band defective light mask image 38 places, defect part anti-reflecting layer and chromium rete that will band defective light mask image 38 be removed, and it is complete that band defective light mask image 38 is repaired.
In the present embodiment, the size of transparency carrier is 6 inches, is coated with 50nm～105nm chromium film on the quartz glass substrate of printing opacity; Increasing thickness on the chromium rete is the chromous oxide layer of 20nm, as anti-reflecting layer; Cover little shadow with photoresist again on anti-reflecting layer, thickness is 300～400nm.Certainly, except that embodiment, can determine the size of light shield and transparency carrier according to the chip size that will make.Equally, the chromium thicknesses of layers that is coated with on transparency carrier can be according to the characteristic of chromium film, and the semiconductor devices of making and making technology require to make adjustment.Anti-reflecting layer is as a cushion, and its thickness is regulated according to the live width of protection figure.The photoresist thickness that covers on anti-reflecting layer is decided by the rete characteristic of required protection and the thickness of subsequent etch.
In the present embodiment, etch process adopts wet etching earlier, be aided with electric paste etching again, but the present invention is exceeded with this etch process.Because in etch processes, may therefore, can amplify the photoresist light-shielding pattern slightly because lateral etch causes damage to the mask pattern layer of original formation as buffering, effectively keep the live width of mask pattern.
In the present embodiment, method by focused ion beam bombardment or ionic reaction deposition writes band defective light mask image 38 place's mending light shield graph with defect 38 with the layout figure of revised band defective light mask image 38 correspondences, and described focused ion beam is for focusing on gallium ion beam.
The synoptic diagram of Fig. 9 embodiment that to be the present invention repair the band defective light mask image on the light shield.As shown in Figure 9, after the graphic making on the light shield 200 is finished, carry out the light shield inspection with the light shield instruments of inspection, owing to be infected with the particulate in a little environment on the light shield 200, the situation of band defective light mask image 202 appears in exposure energy inequality or photoresist problem of materials; Obtain the band defective light mask image 202 on the light shield 200 and be with the defective light mask image 202 defect parts position coordinates of any arbitrarily with the light shield instruments of inspection, according to being with the defective light mask image 202 defect parts position coordinates of any arbitrarily, determine the layout figure of band defective light mask image 202 correspondence position in the light shield domain, and then will from the raw data base of light shield domain, derive with the layout figure of defective light mask image 202 correspondences; Layout figure to the band defective light mask image correspondence that derives carries out the optical approximate correction; Then, layout figure according to revised band defective light mask image correspondence writes band defective light mask image 202 places with focused ion beam, the defect part anti-reflecting layer and the chromium rete of band defective light mask image 202 are removed, and it is complete that band defective light mask image 202 is repaired.
In the present embodiment, the light shield instruments of inspection is the KT575 machine of sky company of section or the ARIS200 machine of Applied Materials.
Method by focused ion beam bombardment or ionic reaction deposition writes band defective light mask image 202 place's mending light shield graph with defect 202 with the layout figure of revised band defective light mask image 202 correspondences, and described focused ion beam is for focusing on gallium ion beam.
The layout graphical format of the band defective light mask image correspondence of described derivation can be graph data stream format (GDS, Graphic Data Stream), the form of interactive standard format (OASIS, OpenArtwork System Interchange Standard) of open architecture or international Institute of Electrical and Electric Engineers (IEEE) approval.
In the present embodiment, optical approximate is modified to optical parametric and graph data required when using optical approximate fixed software analogue exposure, development and etch process.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (7)
1. the method for a mending light shield graph with defect is characterized in that, comprises the following steps:
The layout figure is transferred to forms light mask image on the light shield;
Obtain band defective light mask image and any some position coordinateses of defect part thereof on the light shield;
According to the layout figure derivation that arbitrarily any position coordinates will band defective light mask image correspondence;
Layout figure to the band defective light mask image correspondence that derives carries out the optical approximate correction;
The layout figure of revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield.
2. according to the method for the described mending light shield graph with defect of claim 1, it is characterized in that: obtain band defective light mask image and any some position coordinateses of defect part with the light shield instruments of inspection.
3. according to the method for the described mending light shield graph with defect of claim 1, it is characterized in that: the layout figure of revised band defective light mask image correspondence is transferred to mending light shield graph with defect on the light shield with focused ion beam.
4. according to the method for the described mending light shield graph with defect of claim 3, it is characterized in that: by the method mending light shield graph with defect of focused ion beam bombardment or ionic reaction deposition.
5. according to the method for the described mending light shield graph with defect of claim 4, it is characterized in that: described focused ion beam is for focusing on gallium ion beam.
6. according to the method for the described mending light shield graph with defect of claim 1, it is characterized in that: from the raw data base of light shield domain, will derive with the layout figure of defective light mask image correspondence.
7. according to the method for the described mending light shield graph with defect of claim 1, it is characterized in that: described optical approximate is modified to optical parametric and graph data required when using optical approximate fixed software analogue exposure, development and etch process.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710041109XA CN101311821B (en) | 2007-05-23 | 2007-05-23 | Method for mending light shield graph with defect |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710041109XA CN101311821B (en) | 2007-05-23 | 2007-05-23 | Method for mending light shield graph with defect |
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| CN101311821A true CN101311821A (en) | 2008-11-26 |
| CN101311821B CN101311821B (en) | 2011-05-11 |
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| CN200710041109XA Expired - Fee Related CN101311821B (en) | 2007-05-23 | 2007-05-23 | Method for mending light shield graph with defect |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102736405A (en) * | 2012-06-15 | 2012-10-17 | 深圳市华星光电技术有限公司 | Photomask and amendment method therefor |
| CN103777463A (en) * | 2012-10-25 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | Mask repair method |
| CN103869607A (en) * | 2014-03-18 | 2014-06-18 | 无锡中微掩模电子有限公司 | Method for removing chromium metal film from binary mask |
| CN105511222A (en) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
| CN106371291A (en) * | 2015-07-24 | 2017-02-01 | 中芯国际集成电路制造(上海)有限公司 | Method used for eliminating photomask random error induced wafer defective pixels |
| CN106455335A (en) * | 2016-11-21 | 2017-02-22 | 天津普林电路股份有限公司 | Method for remedying exposure fixed point defects in aerospace circuit board production |
| CN111766761A (en) * | 2020-07-20 | 2020-10-13 | 长江存储科技有限责任公司 | Photomask manufacturing method |
| CN113345328A (en) * | 2021-05-28 | 2021-09-03 | Tcl华星光电技术有限公司 | Mura repairing method for display panel |
| CN116819886A (en) * | 2023-07-03 | 2023-09-29 | 南京科利德光电材料有限公司 | Method for repairing black defect of photomask |
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2007
- 2007-05-23 CN CN200710041109XA patent/CN101311821B/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102736405B (en) * | 2012-06-15 | 2014-07-16 | 深圳市华星光电技术有限公司 | Photomask and amendment method therefor |
| CN102736405A (en) * | 2012-06-15 | 2012-10-17 | 深圳市华星光电技术有限公司 | Photomask and amendment method therefor |
| CN103777463A (en) * | 2012-10-25 | 2014-05-07 | 中芯国际集成电路制造(上海)有限公司 | Mask repair method |
| CN103869607A (en) * | 2014-03-18 | 2014-06-18 | 无锡中微掩模电子有限公司 | Method for removing chromium metal film from binary mask |
| CN105511222B (en) * | 2014-10-14 | 2019-11-08 | 中芯国际集成电路制造(上海)有限公司 | The defect-restoration method therefor and light shield of light shield |
| CN105511222A (en) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
| CN106371291A (en) * | 2015-07-24 | 2017-02-01 | 中芯国际集成电路制造(上海)有限公司 | Method used for eliminating photomask random error induced wafer defective pixels |
| CN106371291B (en) * | 2015-07-24 | 2018-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method for eliminating the wafer bad point generated by light shield random error |
| CN106455335A (en) * | 2016-11-21 | 2017-02-22 | 天津普林电路股份有限公司 | Method for remedying exposure fixed point defects in aerospace circuit board production |
| CN111766761A (en) * | 2020-07-20 | 2020-10-13 | 长江存储科技有限责任公司 | Photomask manufacturing method |
| CN113345328A (en) * | 2021-05-28 | 2021-09-03 | Tcl华星光电技术有限公司 | Mura repairing method for display panel |
| CN116819886A (en) * | 2023-07-03 | 2023-09-29 | 南京科利德光电材料有限公司 | Method for repairing black defect of photomask |
| CN116819886B (en) * | 2023-07-03 | 2024-04-16 | 南京科利德光电材料有限公司 | Method for repairing black defect of photomask |
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