CN116819886B - Method for repairing black defect of photomask - Google Patents
Method for repairing black defect of photomask Download PDFInfo
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- CN116819886B CN116819886B CN202310807868.1A CN202310807868A CN116819886B CN 116819886 B CN116819886 B CN 116819886B CN 202310807868 A CN202310807868 A CN 202310807868A CN 116819886 B CN116819886 B CN 116819886B
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- 230000007547 defect Effects 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000001259 photo etching Methods 0.000 claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000005520 cutting process Methods 0.000 claims abstract description 3
- 238000001459 lithography Methods 0.000 claims description 10
- 238000007689 inspection Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The embodiment of the invention provides a photomask black defect repairing method, which comprises the following steps: determining the position coordinates of a to-be-repaired area which completely contains the black defect on the to-be-repaired photomask in the to-be-repaired photomask; cutting out a local reference pattern corresponding to the area to be repaired from the original design pattern of the photomask to be repaired according to the position coordinates, converting the local reference pattern into an identifiable usable pattern of the photoetching machine, and then guiding the identifiable usable pattern into the photoetching machine; the photomask to be repaired is sequentially cleaned and coated with photoresist, and then is placed into a photoetching machine; the photoetching machine is controlled to determine a region to be repaired on the photomask to be repaired according to the position coordinates input in advance, and the region to be repaired is subjected to fixed-point local exposure according to the available graph; and developing, etching, demolding and cleaning the photomask to be repaired after the fixed-point local exposure is completed in sequence, so as to obtain a repaired photomask finished product. The embodiment can improve the universality of repairing the defects of the photomask.
Description
Technical Field
The embodiment of the invention relates to the technical field of photomask preparation, in particular to a photomask black defect repairing method.
Background
At present, in the manufacturing process of the photomask, black defects are formed on the surface of the photomask after the manufacturing is finished due to factors such as dust blocking exposure light, uneven coating of photoresist, bubbles generated by developing solution and the like. In order to effectively increase the utilization rate of the photomask, the photomask with the black defects is usually repaired.
The existing photomask black defect repairing method is to repair the black defect by adopting laser. However, laser repair defects generally repair only small and regular-shaped black defects, but cannot repair large-sized (e.g., greater than 100 microns in length) or irregular-shaped black defects, and thus the conventional photomask black defect repair method is poor in universality.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is to provide a method for repairing a black defect of a photomask, which can improve the universality of photomask repairing.
In order to solve the above technical problems, the embodiment of the present invention firstly provides the following technical solutions: a photomask black defect repairing method comprises the following steps:
determining a to-be-repaired area which completely contains black defects on a to-be-repaired photomask, and determining the position coordinates of the to-be-repaired area in the to-be-repaired photomask;
Intercepting a local reference pattern corresponding to the area to be repaired from the original design pattern of the photomask to be repaired according to the position coordinates, converting the local reference pattern into an available pattern which can be identified by a photoetching machine, and then guiding the available pattern into the photoetching machine;
the photomask to be repaired is sequentially cleaned and photoresist coated, and then the photomask to be repaired is placed into the photoetching machine;
Controlling the photoetching machine to determine the area to be repaired on the photomask to be repaired according to the position coordinates input in advance, and carrying out fixed-point local exposure on the area to be repaired according to the available graph; and
And developing, etching, demolding and cleaning the photomask to be repaired after the fixed-point local exposure is finished, so as to obtain a repaired photomask finished product.
Further, the position coordinates are coordinates of a central point of the to-be-repaired area.
Further, the center point of the area to be repaired is found by adopting the graph centering function of the photomask detecting equipment, and then the position coordinate is obtained by adopting the measuring function of the photomask detecting equipment according to the actual marking point on the photomask to be repaired.
Further, converting the local reference pattern into a recognizable usable pattern of the lithography machine specifically includes: and firstly, scaling the local reference graph according to a preset proportion, and then converting the local reference graph into a file format which can be recognized by a photoetching machine.
Further, before the available graphics are led into the photoetching machine, the following processing is performed: and calculating according to the graph mark points in the original design graph to obtain the reference center point of the available graph.
Further, the method includes that a local reference pattern corresponding to the to-be-repaired area is cut out from the original design pattern of the to-be-repaired photomask, and the local reference pattern is converted into an identifiable usable pattern of the photoetching machine and then is led into the photoetching machine, specifically, the method is carried out in photomask detection equipment or graphic processing equipment.
Further, the performing the fixed-point local exposure on the area to be repaired according to the available graph specifically includes: controlling a photoetching machine to shoot an image of the area to be repaired in real time, scaling the shot image into an image which is equal to the available graph, then laminating the image with the available graph, and adjusting the relative position of the photomask to be repaired in the photoetching machine until the center point of the shot image coincides with the reference center point of the available graph; and
And controlling the exposure center point of the photoetching machine to move to the coordinate position corresponding to the center point of the area to be repaired, and then carrying out fixed-point local exposure.
Further, the black defect has a length of greater than 100 microns.
After the technical scheme is adopted, the embodiment of the invention has at least the following beneficial effects: according to the embodiment of the invention, after the to-be-repaired area and the position coordinates thereof, which completely contain black defects, on the to-be-repaired photomask are determined, so that a local reference pattern corresponding to the to-be-repaired area is intercepted in an original design drawing of the to-be-repaired photomask according to the position coordinates, and is converted into an available pattern which can be identified by a photoetching machine and then is led into the photoetching machine, so that after the to-be-repaired photomask is cleaned again and coated with photoresist and is put into the photoetching machine, the photoetching machine can quickly find out the to-be-repaired area on the to-be-repaired photomask according to the position coordinates, and the to-be-repaired area is subjected to fixed-point local exposure according to the available pattern, so that repair is implemented; finally, the photomask to be repaired after the local fixed-point exposure is subjected to subsequent photomask manufacturing processes such as development, etching, demolding, cleaning and the like, so that a repaired photomask finished product is obtained, repair can be realized for various similar defects, universality is higher, and repair accuracy can be ensured.
Drawings
FIG. 1 is a flowchart illustrating steps of an alternative embodiment of a method for repairing a black mask defect according to the present invention.
FIG. 2 is a schematic diagram of a mask to be repaired according to an alternative embodiment of the method for repairing a black defect of a mask of the present invention.
FIG. 3 is a schematic diagram of an original design of an alternative embodiment of a method for repairing a black mask defect.
Detailed Description
The application will be described in further detail with reference to the drawings and the specific examples. It should be understood that the following exemplary embodiments and descriptions are only for the purpose of illustrating the application and are not to be construed as limiting the application, and that the embodiments and features of the embodiments of the application may be combined with one another without conflict.
As shown in fig. 1-3, an alternative embodiment of the present invention provides a method for repairing a black defect of a photomask, comprising the steps of:
s1: determining a to-be-repaired area 10 which completely contains black defects on the to-be-repaired photomask 1 and a position coordinate A of the to-be-repaired area 10 in the to-be-repaired photomask 1, as shown in fig. 2;
s2: according to the position coordinate A, a local reference pattern 30 corresponding to the area 10 to be repaired is cut out from the original design pattern 3 of the photomask 1 to be repaired, the local reference pattern 30 is converted into an available pattern which can be identified by a photoetching machine, and then the available pattern is led into the photoetching machine, as shown in figure 3;
S3: the photomask 1 to be repaired is sequentially cleaned and photoresist coated, and then is placed into the photoetching machine;
s4: the photoetching machine is controlled to determine the to-be-repaired area 10 on the to-be-repaired photomask 1 according to the position coordinate A input in advance, and the to-be-repaired area 10 is subjected to fixed-point local exposure according to the available graph; and
S5: and developing, etching, demolding and cleaning the photomask 1 to be repaired after the local fixed-point exposure is finished, so as to obtain a repaired photomask finished product.
After determining a to-be-repaired area 10 and a position coordinate A thereof which completely contain black defects on a to-be-repaired photomask 1, the embodiment of the invention cuts out a local reference pattern 30 corresponding to the to-be-repaired area 10 in an original design chart 3 of the to-be-repaired photomask 1 according to the position coordinate A, converts the local reference pattern 30 into an available pattern which can be identified by a photoetching machine, and then introduces the available pattern into the photoetching machine, so that after the to-be-repaired photomask 1 is cleaned and coated with photoresist again and placed into the photoetching machine, the photoetching machine can quickly find out the to-be-repaired area 10 on the to-be-repaired photomask 1 according to the position coordinate A, and carries out fixed-point local exposure on the to-be-repaired area 10 according to the available pattern, thereby implementing repair; finally, the photomask 1 to be repaired after the local fixed-point exposure is subjected to subsequent photomask manufacturing processes such as development, etching, demolding, cleaning and the like, so that a repaired photomask finished product is obtained, repair can be realized for various similar defects, the universality is higher, and the repair precision can be ensured.
In practice, it will be appreciated that the region 10 to be repaired may be completely coincident with the black defect or may be slightly larger than the black defect, but should generally be slightly larger than the black defect, and may be transformed into a relatively regular shape to facilitate the operation of the subsequent steps.
In an alternative embodiment of the present invention, as shown in fig. 1, the position coordinate a is the center point coordinate of the to-be-repaired area 10. In this embodiment, the position coordinate a selects the center point coordinate of the to-be-repaired area 10, so that subsequent calculation and use are convenient, and the position of the black defect can be conveniently and rapidly determined.
In an alternative embodiment of the present invention, the center point of the to-be-repaired area 10 is found by using the graphic centering function of the mask inspection apparatus, and then the position coordinate a is calculated by using the measuring function of the mask inspection apparatus according to the actual mark point 12 on the to-be-repaired mask 1. In the embodiment, the graphic centering function of the photomask detection equipment can rapidly determine the position of the area to be repaired, realizes centering of an actual center point and has high operation efficiency; by the measuring function of the photomask detecting device, the position coordinate A can be accurately obtained and calculated according to the actual marking point (namely the MARK point of the actual photomask) on the photomask 1 to be repaired, and the method is convenient to calculate and does not need manual operation.
In an alternative embodiment of the present invention, the converting the local reference pattern 30 into a usable pattern recognizable by the lithographic machine specifically includes: the local reference pattern 30 is scaled according to a predetermined ratio and then converted into a file format recognizable by the lithography machine. In this embodiment, the local reference pattern 30 is scaled to a predetermined scale so that the generated image is conveniently displayed on the lithography machine.
In an alternative embodiment of the present invention, the following process is further performed before the available graphic is introduced into the lithography machine: and calculating by using the mask detection device according to the graph MARK points 32 (namely MARK points of the graph mask) in the original design graph 3 to obtain the reference center point B of the available graph. In this embodiment, the accurate alignment and repair of the photomask can be realized by calculating the reference center point of the available pattern, and using the reference center point B of the available pattern to correspond to the center point coordinates of the area to be repaired before the local site-specific exposure is performed on the photomask 1 to be repaired.
In an alternative embodiment of the present invention, the step of cutting out the local reference pattern 30 corresponding to the to-be-repaired area 10 from the original design pattern 3 of the to-be-repaired photomask 1, and converting the local reference pattern 30 into an available pattern identifiable by a photolithography machine, and then introducing the available pattern into the photolithography machine, specifically, in a photomask inspection apparatus or a graphic processing apparatus. In the embodiment, the image interception and the image conversion are performed in the photomask detection device or the image processing device, so that the processing efficiency is high, and manual operation is not needed.
In an alternative embodiment of the present invention, the performing the site-specific local exposure on the area to be repaired 10 according to the available pattern specifically includes:
Controlling a photoetching machine to shoot an image of the area to be repaired 10 in real time, scaling the shot image into an image which is equal to the available image, then laminating the image with the available image, and adjusting the relative position of the photomask 1 to be repaired in the photoetching machine until the center point of the shot image coincides with the reference center point B of the available image; and
And controlling the exposure center point of the photoetching machine to move to the coordinate position corresponding to the center point of the region to be repaired 10, and then carrying out fixed-point local exposure.
In this embodiment, the position coordinate a of the to-be-repaired area 10 is first utilized to coincide with the reference center point B of the available pattern, so that the lithography machine is convenient to determine the center position of the to-be-repaired area 10 through the reference center point B of the available pattern, and ensure that the to-be-repaired area 10 coincides with the available pattern correspondingly, and then the exposure center point of the lithography machine is controlled to move to the reference center point B of the available pattern, so that the exposure center point and the to-be-repaired area 10 can correspond accurately, and local fixed-point exposure is accurately implemented to be repaired.
In an alternative embodiment of the present invention, the defect 12 is greater than 100 microns in length. In this embodiment, the defect 12 has a length greater than 100 micrometers, and the defect has a larger size, and the repairing method provided by the embodiment of the invention can effectively repair the defect 12. Of course, it will be understood that the repair method provided in the embodiment of the present invention can also repair the defect 12 with irregular pattern.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are all within the scope of the present invention.
Claims (7)
1. A method for repairing a black defect in a photomask, the method comprising the steps of:
Determining a to-be-repaired area which completely contains a black defect on a to-be-repaired photomask and position coordinates of the to-be-repaired area in the to-be-repaired photomask, wherein the position coordinates are center point coordinates of the to-be-repaired area, and the to-be-repaired area is a regular-shape area larger than the black defect;
Intercepting a local reference pattern corresponding to the area to be repaired from the original design pattern of the photomask to be repaired according to the position coordinates, converting the local reference pattern into an available pattern which can be identified by a photoetching machine, and then guiding the available pattern into the photoetching machine;
the photomask to be repaired is sequentially cleaned and photoresist coated, and then the photomask to be repaired is placed into the photoetching machine;
Controlling the photoetching machine to determine the area to be repaired on the photomask to be repaired according to the position coordinates input in advance, and carrying out fixed-point local exposure on the area to be repaired according to the available graph; and
And developing, etching, demolding and cleaning the photomask to be repaired after the fixed-point local exposure is finished, so as to obtain a repaired photomask finished product.
2. The method for repairing a black mask defect according to claim 1, wherein a pattern centering function of a mask inspection apparatus is used to find a center point of the region to be repaired, and then a measurement function of the mask inspection apparatus is used to calculate the position coordinates according to actual mark points on the mask to be repaired.
3. The method of claim 2, wherein converting the local reference pattern into a usable pattern recognizable by a lithography machine comprises: and firstly, scaling the local reference graph according to a preset proportion, and then converting the local reference graph into a file format which can be recognized by a photoetching machine.
4. The method of claim 3, wherein the available patterns are further processed before being introduced into the lithography machine: and calculating according to the graph mark points in the original design graph to obtain the reference center point of the available graph.
5. The method for repairing a black mask defect according to claim 1, 3 or 4, wherein the step of cutting out a local reference pattern corresponding to the region to be repaired from the original design pattern of the mask to be repaired, converting the local reference pattern into a usable pattern recognizable by a lithography machine, and then introducing the usable pattern into the lithography machine is performed in a mask inspection apparatus or a pattern processing apparatus.
6. The method of claim 4, wherein performing the spot-wise local exposure on the area to be repaired according to the available pattern comprises:
Controlling a photoetching machine to shoot an image of the area to be repaired in real time, scaling the shot image into an image which is equal to the available graph, then laminating the image with the available graph, and adjusting the relative position of the photomask to be repaired in the photoetching machine until the center point of the shot image coincides with the reference center point of the available graph; and
And controlling the exposure center point of the photoetching machine to move to the coordinate position corresponding to the center point of the area to be repaired, and then carrying out fixed-point local exposure.
7. The method of claim 1, wherein the black defect has a length greater than 100 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310807868.1A CN116819886B (en) | 2023-07-03 | 2023-07-03 | Method for repairing black defect of photomask |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310807868.1A CN116819886B (en) | 2023-07-03 | 2023-07-03 | Method for repairing black defect of photomask |
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| Publication Number | Publication Date |
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| CN116819886A CN116819886A (en) | 2023-09-29 |
| CN116819886B true CN116819886B (en) | 2024-04-16 |
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| CN202310807868.1A Active CN116819886B (en) | 2023-07-03 | 2023-07-03 | Method for repairing black defect of photomask |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311821A (en) * | 2007-05-23 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | Method for mending light shield graph with defect |
| JP2010217918A (en) * | 2010-05-18 | 2010-09-30 | Dainippon Printing Co Ltd | Method for correcting defect in photomask |
| CN114488685A (en) * | 2021-12-31 | 2022-05-13 | 广州新锐光掩模科技有限公司 | EUV photomask defect positioning method |
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- 2023-07-03 CN CN202310807868.1A patent/CN116819886B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311821A (en) * | 2007-05-23 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | Method for mending light shield graph with defect |
| JP2010217918A (en) * | 2010-05-18 | 2010-09-30 | Dainippon Printing Co Ltd | Method for correcting defect in photomask |
| CN114488685A (en) * | 2021-12-31 | 2022-05-13 | 广州新锐光掩模科技有限公司 | EUV photomask defect positioning method |
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| CN116819886A (en) | 2023-09-29 |
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