CN114488685A - EUV photomask defect positioning method - Google Patents
EUV photomask defect positioning method Download PDFInfo
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- CN114488685A CN114488685A CN202111671010.4A CN202111671010A CN114488685A CN 114488685 A CN114488685 A CN 114488685A CN 202111671010 A CN202111671010 A CN 202111671010A CN 114488685 A CN114488685 A CN 114488685A
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- 230000007547 defect Effects 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000001259 photo etching Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 abstract description 39
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000007689 inspection Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The application provides a method for positioning defects of an EUV photomask, which belongs to the technical field of EUV lithography and comprises the following steps: preparing an alignment graph required by a photoetching machine on an EUV photomask substrate; detecting the position of the defect to obtain coordinates (x, y); aligning by the photoetching machine according to the alignment pattern; writing a regular pattern by the photoetching machine by taking the defect position as a fixed point and developing; obtaining the transverse distance delta x and the longitudinal distance delta y of the defect from the fixed point in the regular graph; and calculating to obtain the accurate coordinates (x + delta x, y + delta y) of the defect in the coordinate system of the photoetching machine. By the processing scheme, the equipment is saved, the manufacturing time of the EUV photomask is shortened, and the accuracy of the defect position is improved.
Description
Technical Field
The application relates to the technical field of EUV lithography, in particular to a method for positioning defects of an EUV photomask.
Background
Defect-free EUV (extreme ultraviolet lithography) mask preparation is one of the key problems that limit the mass production of EUV lithography, EUV mask defect detection is a key core technology for realizing EUV lithography, defects on an EUV photomask substrate can cause energy deviation of an EUV lithography machine, the efficiency and the electrical property of a chip are affected, and the chip is seriously scrapped, but it is very difficult to produce a completely defect-free EUV photomask substrate, so that the coordinates of the defects need to be accurately positioned, and the existing defect positioning process is very complex and time-consuming.
Disclosure of Invention
In view of the above, embodiments of the present application provide an EUV photomask defect positioning method, which at least partially solves the problem in the prior art that the defect positioning process is complicated and time-consuming.
The embodiment of the application provides an EUV photomask defect positioning method, which comprises the following steps:
preparing an alignment graph required by a photoetching machine on an EUV photomask substrate;
detecting the position of the defect to obtain coordinates (x, y);
aligning by the photoetching machine according to the alignment pattern;
writing a regular pattern by the photoetching machine by taking the defect position as a fixed point and developing;
obtaining the transverse distance delta x and the longitudinal distance delta y of the defect from the fixed point in the regular graph;
and calculating to obtain the accurate coordinates (x + delta x, y + delta y) of the defect in the coordinate system of the photoetching machine.
According to a specific implementation manner of the embodiment of the application, the obtaining of the transverse distance Δ x and the longitudinal distance Δ y of the defect from the fixed point in the regular pattern includes:
scanning the developed regular pattern by using an atomic force microscope to obtain an image;
and analyzing the image to obtain the transverse distance delta x and the longitudinal distance delta y.
According to a specific implementation manner of the embodiment of the application, the fixed point is a central point of the regular graph.
According to a specific implementation manner of the embodiment of the application, the regular pattern is a square, a circle, a triangle or a hexagon.
According to a specific implementation manner of the embodiment of the application, the regular graph is a square, and the side length range of the square is 3-10 um.
According to a specific implementation manner of the embodiment of the application, the preparing of the alignment pattern required by the lithography machine on the EUV photomask blank specifically comprises:
coating photoresist on the EUV photomask substrate;
photoetching the appearance of the alignment graph by using a photoetching machine;
baking the EUV photomask substrate after photoetching;
developing the appearance of the alignment pattern formed by photoetching;
etching the shape and appearance of the alignment pattern formed by photoetching;
and removing the remaining photoresist to obtain the EUV photomask blank with the alignment pattern.
According to a specific implementation manner of the embodiment of the present application, after the step of calculating to obtain the precise coordinates (x + Δ x, y + Δ y) of the defect, the method further includes:
matching a proper circuit design drawing according to the accurate coordinates of the defects;
cleaning the EUV photomask substrate;
after cleaning, photoresist is coated for standby.
According to a specific implementation manner of the embodiment of the application, the defect position is detected by using defect detection equipment.
Advantageous effects
According to the method for positioning the defects of the EUV photomask, the manufacture of a first alignment pattern of defect detection equipment is omitted, the defect detection equipment and an electron beam lithography machine share the same alignment pattern, the use of the equipment is saved, the time for manufacturing the EUV photomask is shortened, and the accuracy of the positions of the defects is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flow chart of an EUV photomask defect locating method according to an embodiment of the present invention;
FIGS. 2 to 5 are schematic structural diagrams corresponding to steps of an EUV mask defect positioning method according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of coordinate system deviation of an EUV mask defect positioning method according to an embodiment of the present invention.
In the figure: 1. an EUV photomask substrate; 2. aligning the pattern; 3. a defect; 4. and (5) regular graphics.
Detailed Description
The embodiments of the present application will be described in detail below with reference to the accompanying drawings.
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number of the aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present application, and the drawings only show the components related to the present application rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that aspects may be practiced without these specific details.
The defect positioning method mainly comprises the following steps:
firstly, a first alignment pattern used by defect detection equipment is burned out by laser, and defect detection is carried out based on the first alignment pattern to obtain a first coordinate (X, Y) of a defect.
Step two, preparing a second alignment pattern for the lithography machine, measuring the position of the first alignment pattern/the second alignment pattern, converting the defect coordinates into coordinates (X ', Y') aligned with the second alignment pattern,
X’＝a0+a1X+a2Y,
Y’＝b0+b1X+b2Y,
wherein, a0，a1，a2，b0，b1，b2Are all constants.
And step three, coating photoresist, writing a square pattern according to the defect position by using a photoetching machine, and developing.
And step four, obtaining the position of the defect in the square pattern, and calculating the accurate coordinate of the defect.
With regard to the above method, it has been found through research that the position of the defect is not very accurate due to the fact that the coordinates of the defect detection apparatus are not accurate enough and may deviate from the coordinate system of the photomask lithography machine, as shown in fig. 6, for example, there are problems of coordinate system origin deviation (offset), coordinate system rotation (rotation) and unit length inconsistency (scale) between the two coordinate systems, so that the position of the defect cannot be directly matched with layout.
The present application improves upon the EUV photomask defect locating method based on the above-described problems, and is described in detail below with reference to fig. 1 to 5.
In this embodiment, a specific flow of the EUV photomask defect positioning method refers to fig. 1, and specifically includes the following steps:
s101, preparing an alignment pattern 2 required by a photoetching machine on an EUV photomask blank 1, wherein a square outer frame is the EUV photomask blank 1 and 4 + marks on corners are the alignment pattern 2, as shown in FIG. 2. Since the alignment of the electron beam lithography machine is performed by scanning with an electron beam, the pattern needs to have a surface material with different heights so as to have a sufficiently obvious signal.
Therefore, in this embodiment, the alignment pattern 2 is prepared by an etching method, which specifically includes the following steps:
s1011, coating photoresist on the EUV photomask blank 1;
s1012, utilizing a photoetching machine to carry out photoetching to align the appearance of the pattern 2;
s1013, baking the EUV photomask blank 1 after photoetching;
s1014, developing the appearance of the alignment graph formed by photoetching;
s1015, etching the alignment pattern morphology formed by photoetching;
and S1016, removing the residual photoresist to obtain the EUV photomask blank 1 with the alignment pattern 2.
Next, the position of the defect 3 is detected, and referring to fig. 3, a circle in the figure represents the defect 3, and there may be several defects 3 at different positions on different substrates.
S102, detecting the position of the defect 3 by using a defect detecting device to obtain coordinates (x, y), wherein the defect detecting device performs alignment with the alignment pattern 2 prepared in step S101 and performs defect 3 detection. However, since the coordinate accuracy of the defect inspection apparatus is not sufficient, there may be an error of 1-2um, and the error of the defect coordinate to layout comparison is as small as 300nm, the defect coordinate measured by the defect inspection apparatus cannot be used to compare with layout, so more accurate coordinate is required, and the following steps are continued.
S103, aligning by the photoetching machine according to the alignment graph 2;
and S104, coating the photoresist, writing the regular pattern 4 by using the coordinates (x, y) of the position of the defect 3 as a fixed point by the photoetching machine, and developing, wherein the regular pattern 4 can be a square, a circle, a triangle or a hexagon.
Preferably, the regular pattern 4 is square and the fixed point is the center point of the square, and considering that the lithography machine is more complicated and time-consuming to process circles/arcs/triangles/polygons than to teach, the regular pattern 4 is preferably square. Referring to fig. 4, the defect 3 may fall into the square, since the coordinate (x, y) of the position of the defect 3 is measured by the defect inspection apparatus, the detection error of the defect inspection apparatus is large, and when the lithography machine writes the square by using the coordinate as the center point, that is, the lithography machine operates with a defect coordinate (x, y) having a deviation, and the position of the actual defect 3 is at a certain distance from the coordinate (x, y), a situation that the defect 3 is not at the center point of the square in fig. 4 occurs.
S105, the lateral distance Δ x and the longitudinal distance Δ y of the defect 3 from the fixed point in the regular pattern 4 are obtained, referring to fig. 5. In this embodiment, scanning the defect 3 with an atomic force microscope specifically includes:
s1051, scanning the developed regular pattern 4 by using an atomic force microscope to obtain an image with the defect 3. It should be noted that the multi-layer structure of the EUV photomask blank 1 may be protruded at the surface if coated particles are present during the manufacturing process, or may be depressed at the surface if the coating particles are absent, so that the defect 3 may be present at the position of the defect by scanning the surface topography using an atomic force microscope.
And S1052, carrying out image analysis to obtain a transverse distance delta x and a longitudinal distance delta y. The measurement in this step is that the atomic force microscope cannot obtain more accurate coordinates from the coordinates because of insufficient coordinate accuracy, and therefore, the coordinates of the lithography machine are used as the final reference.
And S106, calculating to obtain an accurate coordinate (x ', y') of the defect 3 in a coordinate system of the photoetching machine, wherein x 'is x + delta x, y' is y + delta y, and because the error of the photoetching machine after alignment is less than 40nm, a square is written in the position of the defect 3 by the photoetching machine, then the defect is scanned by an atomic force microscope, and the accurate defect coordinate can be obtained by measuring a scanned image.
In a preferred embodiment, the regular pattern 4 is a square, the side length of which is in the range of 3-10 um.
Preferably, the sides of the square are 6 um.
It should be explained that, for different detection scenarios, the size of the regular pattern 4 needs to be determined according to the degree of deviation of the defect position detected by the defect detection device, so as to ensure that the defect 3 can fall into the regular pattern 4.
In one embodiment, after step S106, the method further includes:
and S107, matching a proper circuit design drawing (layout) according to the precise coordinates (x ', y') of the defect 3, wherein specifically, in the circuit design drawing, areas without patterns or some patterns are not influenced by the defect and can be overlapped with the position of the defect 3 when matching the layout. Since the EUV photomask blank 1 is a 6-inch square, it is possible to try the comparison of four angles of 0 °, 90 °, 180 °, and 270 °, and to perform a slight translation of each angle up, down, left, and right to see whether or not there is a position to avoid the defect, so as to avoid the defect 3 as much as possible.
And S108, after matching, cleaning the EUV photomask blank 1.
S109, after cleaning, the EUV photomask blank 1 is coated with a photoresist for standby.
According to the embodiment of the invention, the defect positioning process of the EUV photomask blank is improved, and the first alignment pattern of the defect detection equipment and the second alignment pattern of the photoetching machine are combined, so that the measurement of position measurement equipment is not needed for carrying out coordinate conversion, the time for measurement of Registration equipment (such as KLA IPOR or ZEISS PROVE) is saved, and the reason for carrying out coordinate conversion is that the first alignment pattern and the second alignment pattern are made by different equipment and have differences of offset, scale, rotation and the like. Therefore, the manufacturing of the first alignment pattern of the defect detection equipment is omitted, the defect detection equipment and the electron beam lithography machine share the same alignment pattern, the equipment is saved, and the manufacturing time of the EUV photomask is shortened.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (8)
1. An EUV photomask defect locating method, comprising the steps of:
preparing an alignment graph required by a photoetching machine on an EUV photomask substrate;
detecting the position of the defect to obtain coordinates (x, y);
aligning by the photoetching machine according to the alignment pattern;
writing a regular pattern by the photoetching machine by taking the defect position as a fixed point and developing;
obtaining the transverse distance delta x and the longitudinal distance delta y of the defect from the fixed point in the regular graph;
and calculating to obtain the accurate coordinates (x + delta x, y + delta y) of the defect in the coordinate system of the photoetching machine.
2. An EUV photomask defect locating method according to claim 1, wherein the obtaining of the lateral distance Δ x and the longitudinal distance Δ y of a defect in the regular pattern from the fixed point comprises:
scanning the developed regular pattern by using an atomic force microscope to obtain an image;
and analyzing the image to obtain the transverse distance delta x and the longitudinal distance delta y.
3. The EUV photomask defect locating method of claim 1, wherein the fixed point is a center point of the regular pattern.
4. The EUV photomask defect locating method of claim 3, wherein the regular pattern is a square, circle, triangle or hexagon.
5. An EUV photomask defect locating method according to claim 4, characterized in that the regular pattern is a square, the side length of the square being in the range 3-10 um.
6. The method for positioning defects of an EUV photomask according to claim 1, wherein the preparing of the alignment pattern required by the lithography machine on the EUV photomask substrate specifically comprises:
coating photoresist on the EUV photomask baseplate;
photoetching the appearance of the alignment graph by using a photoetching machine;
baking the EUV photomask substrate after photoetching;
developing the appearance of the alignment graph formed by photoetching;
etching the shape and appearance of the alignment pattern formed by photoetching;
and removing the remaining photoresist to obtain the EUV photomask blank with the alignment pattern.
7. The EUV photomask defect locating method of claim 1, further comprising after the step of calculating the precise coordinates (x + Δ x, y + Δ y) of the defect:
matching a proper circuit design drawing according to the accurate coordinates of the defects;
cleaning the EUV photomask substrate;
after cleaning, photoresist is coated for standby.
8. The EUV photomask defect locating method of claim 1, wherein the detected defect position is detected using a defect detection apparatus.
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| CN116819886A (en) * | 2023-07-03 | 2023-09-29 | 南京科利德光电材料有限公司 | Method for repairing black defect of photomask |
| CN117191506A (en) * | 2023-07-26 | 2023-12-08 | 广州新锐光掩模科技有限公司 | Standard sheet for testing capability of inspecting machine to grasp defect and inspecting method |
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