CN107703715A - A kind of restorative procedure of mask pattern defect - Google Patents
A kind of restorative procedure of mask pattern defect Download PDFInfo
- Publication number
- CN107703715A CN107703715A CN201610642440.6A CN201610642440A CN107703715A CN 107703715 A CN107703715 A CN 107703715A CN 201610642440 A CN201610642440 A CN 201610642440A CN 107703715 A CN107703715 A CN 107703715A
- Authority
- CN
- China
- Prior art keywords
- mask
- mask pattern
- normal
- defect
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present invention provides a kind of restorative procedure of mask pattern defect, is related to technical field of semiconductors.The restorative procedure of the present invention is by reducing the pixels of the mask defective patterns or the normal mask pattern, the mask defective patterns or the size of the normal mask pattern is set accordingly to reduce, amplify the not same district between mask defective patterns and normal mask pattern, same district is not defect area for this, and then readily identify the position for orienting defect area, therefore, the method of the present invention can be automatically positioned defect repair region by changing control menu parameter, successfully realize the reparation to nanoscale microdefect.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of restorative procedure of mask pattern defect.
Background technology
Semiconductor integrated circuit (Integrated Circuit, abbreviation IC) namely semiconductor chip need in the fabrication process
Experience material preparations, plate-making, photoetching, cleaning, etch, ooze it is miscellaneous, the multiple working procedure such as chemically-mechanicapolish polish, wherein especially with photoetching process
It is the most key.Photoetching process decides the advanced degree of semiconductor chip fabrication process, just because of photoetching technique it is huge enter
Step just brings integrated circuit fabrication process into deep sub-micron era from micron period, and then marches toward nanometer era.Photoetching process needs
Wanting a whole set of (several pieces or up to more than ten pieces), masterplate is sheltered in energy accurate registration, the photoetch with particular geometric figure each other,
Abbreviation lithography mask version (Mask).Lithography mask version is actually that photoresist in photoetching process (is commonly called as photoresist, also referred to as light
Resistance) layer " print egative film ", printed the geometric figure of original integrated circuit design layout thereon.That is, from original set
The formation of circuitous pattern into circuit design layout to wafer, intermediate demand is by plate-making link, namely needs to make a set of
The lithography mask version for printing original integrated circuit design layout pattern thereon is used as " print egative film ".Photoetching process is exactly should
Geometric figure on " print egative film " is transferred on wafer, the circuitous pattern formed on wafer.
More than ten or even tens photo-mask process is generally required in chip manufacturing proces, per pass photo-mask process is required for using
To one piece of lithography mask version, every piece of lithography mask version quality height all directly influences the Functionality, quality and appealing design of litho pattern on wafer
It is bad, and then influence the yield rate of chip.Therefore, perfect original set must could be presented in the mask pattern on lithography mask version
Into the complete pattern of circuit design layout.Once incomplete mask pattern is transferred on wafer, wafer will result in
Manufactured goods it is off quality.
Therefore, the reparation of mask graph defect need to be carried out after completing lithography mask version and making, mask pattern defect is repaiied
It is the committed step for manufacturing high-quality mask plate again, the restorative procedure of mask pattern defect is typically manual definition filling at present
(for example, deposition) or the reparation area for removing (for example, etching), obtains mask pattern corresponding to mask pattern defective locations first
Image and the image of normal mask pattern relevant position, wherein, the image of mask pattern is corresponding to mask pattern defective locations
Mask image to be repaired, the figure of the normal mask pattern relevant position is normal mask image, by graphic processing facility,
The edge contour of mask image to be repaired and normal mask image is obtained, and carries out overlapping (overlap) comparison, if to be repaired
The edge contour of mask image has protuberance compared with the edge contour of normal mask image, then the protuberance is defect area
(alternatively referred to as area to be repaired), and accordingly to lithography mask version the defects of the etching reparation that carries out, and if mask to be repaired
The edge contour of image has depressed part compared with the edge contour of normal mask image, then the protuberance is defect area,
Accordingly to lithography mask version the defects of, area carried out deposition reparation, with developing rapidly for lsi technology technology,
The minimal critical dimensions of mask plate narrow down to 28nm nodes and following, and the nanoscale microdefect on mask plate is difficult to be ignored, but
It is due to not have sufficiently large difference between defective patterns and normal figure, causes the method for traditional graphics overlay can not be accurate
It is determined that position goes out the position of defect area and causes to repair failure so that the quality of mask plate is reduced, and wafer may be printed
Swiped through journey causes serious negative effect.
Therefore, presence in view of the above problems, it is necessary to propose a kind of restorative procedure of new mask pattern defect.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will enter in specific embodiment part
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical scheme claimed
Key feature and essential features, the protection domain for attempting to determine technical scheme claimed is not meant that more.
In view of the shortcomings of the prior art, a kind of restorative procedure of mask pattern defect is provided in the embodiment of the present invention one, wrapped
Include：
Obtain the SEM image of mask pattern corresponding to mask pattern defective locations and normal mask pattern on lithography mask version
The SEM image of relevant position, wherein, the SEM image of mask pattern corresponding to mask pattern defective locations is mask defect image,
The SEM image of the normal mask pattern relevant position is normal mask image；
The mask defect image and the edge feature of the normal mask image are extracted, and is translated into geometric figure
Form stores, so as to obtain original mask defective patterns and initial normal mask pattern；
White space in the edge contour of the original mask defective patterns and initial normal mask pattern is filled out
Fill, so as to form mask defective patterns and normal mask pattern；
Reduce the mask defective patterns or the pixel of the normal mask pattern, make the mask defective patterns or
The size of the normal mask pattern accordingly reduces, so as to obtain reticule defective patterns or middle normal mask figure respectively
Shape；
The edge feature of the normal mask pattern of the reticule defective patterns or the centre is extracted, and is converted
Stored for geometric figure form, it is normal so as to obtain the edge contour figure of the reticule defective patterns or the centre
The edge contour figure of mask pattern；
The edge contour figure of the reticule defective patterns and the initial normal mask pattern are subjected to overlap ratio
It is right, or, the edge contour figure of the normal mask pattern in the centre and the original mask defective patterns are subjected to overlap ratio
It is right, underlapped region is identified, the underlapped region is defect area, so as to position defect in the lithography mask version
Position；
The defects of described lithography mask version is repaired.
Further, before the step of reducing the pixel of the mask defective patterns or the normal mask pattern, also
Comprise the following steps：The lithography mask version is detected, tentatively to judge to the mask pattern on the lithography mask version
The defects of is filled reparation, and still removal is repaired.
Further, the method detected to the lithography mask version includes：
The mask defect image and the normal mask image are subjected to overlap ratio pair, if mask defect image is compared
Normal mask image includes protuberance defect, then using the method removal protuberance defect for removing and repairing, if mask
Defect image includes depressed part defect compared to normal mask image, then the method repaired using the filling repairs the depression
Portion's defect.
Further, the method that the filling is repaired is deposited using reactive ion, and the method repaired that removes uses etching
Technique or focused ion beam bombardment.
Further, the image of mask pattern and normal mask pattern relevant position corresponding to mask pattern defective locations are obtained
Image the step of before, in addition to step：The lithography mask version with mask pattern defect is sent into mask pattern to lack
Fall into the step of repairing board.
Further, the mask defect image and the normal mask image are gone out in same lay photoetching mask plate photographs
Mask pattern defective locations corresponding to mask pattern and the SEM image of normal mask pattern relevant position.
Further, in described the step of reducing the mask defective patterns or the normally pixel of mask pattern,
If predetermined repaired using filling restorative procedure to the defects of lithography mask version, reduce the mask defective patterns
Pixel, make the critical dimension reduction of the mask defective patterns, keep the critical size of the normal mask pattern constant, if in advance
Surely the defects of lithography mask version, is repaired using the method for removing reparation, then reduces the normal mask pattern
Pixel, make the critical dimension reduction of the normal mask pattern, keep the critical size of the mask defective patterns constant.
Further, the mask defective patterns and the normal mask pattern include what is filled in white space and profile
Region, when reducing the pixel of the mask defective patterns or the normal mask pattern, only reduce what is filled in the profile
The pixel in region, keep the pixel of white space constant.
Further, the geometric figure form is graphic design system form.
Further, the lithography mask version includes binary form lithography mask version and phase shift lithography mask version.
The restorative procedure of the present invention is made by reducing the pixels of the mask defective patterns or the normal mask pattern
The mask defective patterns or the size of the normal mask pattern accordingly reduce, and amplify mask defective patterns and normal mask
Not same district between figure, the different zones are defect area, and then readily identify the position for orienting defect area, therefore,
The method of the present invention can be automatically positioned defect repair region by changing control menu parameter, successfully realize micro- to nanoscale
The reparation of defect.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the principle of the present invention.
In accompanying drawing：
Figure 1A-Fig. 1 D show the correlation step of the restorative procedure of the mask pattern defect in a specific embodiment of the invention
The schematic diagram obtained；
Fig. 2A-Fig. 2 D show the related step of the restorative procedure of the mask pattern defect in another specific embodiment of the present invention
Suddenly the schematic diagram obtained；
Fig. 3 shows the schematic diagram in the defects of being oriented in a specific embodiment of the invention area；
Fig. 4 shows the process chart of the restorative procedure of the mask pattern defect of the specific embodiment of the present invention.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in Ceng He areas may be exaggerated.From beginning to end
Same reference numerals represent identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, its can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
Person may have element or layer between two parties.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or when " being directly coupled to " other elements or layer, then element or layer between two parties is not present.It should be understood that although it can make
Various elements, part, area, floor and/or part are described with term first, second, third, etc., these elements, part, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish an element, part, area, floor or part with it is another
One element, part, area, floor or part.Therefore, do not depart from present invention teach that under, the first element discussed below, portion
Part, area, floor or part are represented by the second element, part, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and by using so as to describe an element shown in figure or feature with
The relation of other elements or feature.It should be understood that in addition to the orientation shown in figure, spatial relationship term is intended to also include making
With the different orientation with the device in operation.For example, if the device upset in accompanying drawing, then, is described as " under other elements
Face " or " under it " or " under it " element or feature will be oriented to other elements or feature " on ".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
Describe to send out herein with reference to the cross-sectional view of the schematic diagram of the desirable embodiment (and intermediate structure) as the present invention
Bright embodiment.As a result, it is contemplated that due to caused by such as manufacturing technology and/or tolerance from the change of shown shape.Therefore,
Embodiments of the invention should not necessarily be limited to the given shape in area shown here, but including due to for example manufacturing caused shape
Shape deviation.For example, it is shown as that the injection region of rectangle generally has circle at its edge or bending features and/or implantation concentration ladder
Degree, rather than the binary change from injection region to non-injection regions.Equally, the disposal area can be caused by injecting the disposal area formed
Some injections in area between the surface passed through during injection progress.Therefore, the area shown in figure is substantially schematic
, their shape is not intended the true form in the area of display device and is not intended to limit the scope of the present invention.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to explain proposition of the present invention
Technical scheme.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, the present invention can be with
With other embodiment.
Embodiment one
The lithography process of lithography mask version mainly comprises the following steps at present：First, in smooth bright and clean glass (or stone
English) in base version by Deposited By Dc Magnetron Sputtering photosensitive material chromium nitride-nitrogen oxidation chromium so as to forming chromium film base version；Then, exist
Sol evenning chromium plate is made in one layer of photoresist of even application or electron sensitive resist in the chromium film base version, and the sol evenning chromium plate is light
Mask substrate, it is the preferable photonasty blank plate for making micro geometric figure；Finally, by photoetching mask-making technology in photomask
The micro geometric figure being transformed by original integrated circuit design layout is printed in base version, so as to complete the system of lithography mask version
Version process.Each micro geometric figure correspond to an original integrated circuit design layout on lay photoetching mask plate, and the micro is several
What figure is referred to as mask pattern.So, just printed on lithography mask version completely the same with original integrated circuit design layout
Millions of individual mask patterns.
And after lithography mask version completes, it is necessary first to the lithography mask version is put into mask pattern and examines board to enter
Row graphic defects inspection.Examine board to check the mask pattern defect on lithography mask version, there will be the light of mask pattern defect
Carve mask plate and be sent into mask pattern defect repair board progress defect repair, and due to the minimal critical dimensions contracting with mask plate
It is small to 28nm nodes and following, there is no sufficiently large difference between defective patterns and normal figure, it is difficult positioning to repair board
The position coordinates in the area to be repaired of mask pattern defect, therefore accurately the mask pattern defect can not be repaired, and then
Make the quality decline of lithography mask version.
In order to exist when solving the problems, such as foregoing mask pattern defect repair, the present invention proposes a kind of mask pattern defect
Restorative procedure, as shown in figure 4, mainly including the following steps that：
In step sl, obtain lithography mask version on the SEM image of mask pattern corresponding to mask pattern defective locations and
The SEM image of normal mask pattern relevant position, wherein, the SEM image of mask pattern is corresponding to mask pattern defective locations
Mask defect image, the SEM image of the normal mask pattern relevant position is normal mask image；
In step s 2, the mask defect image and the edge feature of the normal mask image are extracted, and by its turn
The storage of geometric figure form is turned to, so as to obtain original mask defective patterns and initial normal mask pattern；
In step s3, to the blank in the edge contour of the original mask defective patterns and initial normal mask pattern
Region is filled, so as to form mask defective patterns and normal mask pattern；
In step s 4, reduce the mask defective patterns or the pixel of the normal mask pattern, make the mask
Defective patterns or the size of the normal mask pattern accordingly reduce, so as to obtain respectively reticule defective patterns or in
Between normal mask pattern；
In step s 5, the edge for extracting the normal mask pattern of the reticule defective patterns or the centre is special
Sign, and be translated into geometric figure form storage, so as to obtain the edge contour figure of the reticule defective patterns or
The edge contour figure of normal mask pattern among described in person；
In step s 6, by the edge contour figure of the reticule defective patterns and the initial normal mask pattern
Overlap ratio pair is carried out, or, by the edge contour figure of the normal mask pattern in the centre and the original mask defective patterns
Overlap ratio pair is carried out, identifies underlapped region, the underlapped region is defect area, is covered so as to position the photoetching
The position of defect in film version；
In the step s 7, the defects of described lithography mask version is repaired.
According to the restorative procedure of the present invention, by the picture for reducing the mask defective patterns or the normal mask pattern
Element, the method for making the mask defective patterns or the size of the normal mask pattern accordingly reduce, amplifies mask defect map
Not same district between shape and normal mask pattern, same district is not defect area for this, and then readily identifies and orient defect area
Position, therefore, method of the invention can be automatically positioned defect repair region by changing formula and state modulator, successfully real
Now to the reparation of nanoscale microdefect.
Below, with reference to the reparation of figure 1A- Fig. 1 D, Fig. 2A-Fig. 2 D and Fig. 3 and Fig. 4 to the mask pattern defect of the present invention
Method is described in detail, wherein, Figure 1A-Fig. 1 D show the reparation of the mask pattern defect in a specific embodiment of the invention
The schematic diagram that the correlation step of method is obtained；Fig. 2A-Fig. 2 D show the mask pattern in another specific embodiment of the present invention
The schematic diagram that the correlation step of the restorative procedure of defect is obtained；Fig. 3 shows what is oriented in a specific embodiment of the invention
The schematic diagram of defect area；The technique that Fig. 4 shows the restorative procedure of the mask pattern defect of the specific embodiment of the present invention
Flow chart.
First, there is provided the lithography mask version to have completed, wherein lithography mask version can be those skilled in the art
Well known any kind of mask plate, for example, the lithography mask version can be binary form lithography mask version or phase shift photoetching
Mask plate etc..
Then, examine board to detect lithography mask version by lithography mask version, covered it is determined that having defective photoetching
Film version, and tentatively judge to be filled the defects of mask pattern on the lithography mask version reparation or remove to repair.
As shown in Figure 1A and Fig. 2A, specifically, photoetching can be scanned by a high resolution microscope or a detection board and covered
Film version surface, so as to obtain the SEM image of mask pattern corresponding to mask pattern defective locations on lithography mask version and normally cover
The SEM image of film pattern relevant position, wherein, the image of mask pattern corresponding to mask pattern defective locations is mask defect map
As ((a) figure in such as Figure 1A and Fig. 2A), the figure of the normal mask pattern relevant position be normal mask image (such as Figure 1A and
(b) figure in Fig. 2A), namely reference picture picture.
It is many completely the same with original integrated circuit design layout pattern identical due to having on same lithography mask version
Mask pattern, and be only one of those or a few by the mask pattern of defect, therefore in one embodiment, from light
Carve selects one of them not have the mask pattern of mask pattern defect (i.e. normal mask pattern) to be used as reference pattern on mask plate.
That is, go out normal mask pattern of another width without mask pattern defect from same lithography mask version photographs using SEM
SEM image as reference picture picture.Namely the mask defect image and the normal mask image are covered in same photoetching
Mask pattern corresponding to the mask pattern defective locations that masterplate photographs go out and the SEM image of normal mask pattern relevant position.
In one example, the method detected to the lithography mask version includes：By the mask defect image and
The normal mask image carries out overlap ratio pair, should if mask defect image includes protuberance defect compared to normal mask image
Protuberance defect refers to compare normal mask image, and the local size of the light non-transmittable layers in mask defect image is excessive, therefore just
Step judges to need to use the method repaired that removes to remove the protuberance defect, if mask defect image compares normal mask
Image includes depressed part defect, and the depressed part defect refers to compare normal mask image, and mask defect image is in depressed part region
In lack light non-transmittable layers, therefore the preliminary method for judging to need to use the filling to repair repairs the depressed part defect.
Then, the lithography mask version with mask pattern defect is sent into mask pattern defect repair board.
Exemplarily, the reparation board can include computer system, and the image being installed in the computer system
Processing routine, edge feature can be carried out to the mask defect image received and normal mask image via the image processing program
Extraction and filling and the processing such as pixel edition.
Then, as shown in fig. ib and fig. 2b, using the graphic processor repaired on board, the mask defect map is extracted
The edge feature of picture and the normal mask image, and the storage of geometric figure form is translated into, so as to obtain original mask
Defective patterns and initial normal mask pattern, the Edge Gradient Feature mode is the usual edge feature of those skilled in the art
Extracting method.In one embodiment, the geometric figure form is GDS format.Those skilled in the art can also use it
He stores edge feature data by geometric figure form.
And then to the white space in the edge contour of the original mask defective patterns and initial normal mask pattern
It is filled, so as to form mask defective patterns and normal mask pattern, those skilled in the art can use conventional fill out
Fill mode to be filled the white space in edge contour, be as shown in Figure 1B the mask defective patterns formed after filling, and
Normal mask pattern to be formed after filling as shown in Figure 2 B.
Afterwards, reduce the mask defective patterns or the pixel of the normal mask pattern, make the mask defect map
Shape or the size of the normal mask pattern accordingly reduce, so as to obtain reticule defective patterns or middle normal respectively
Mask pattern, and then, the edge feature of the normal mask pattern of the reticule defective patterns or the centre is extracted, and
The storage of geometric figure form is translated into, so as to obtain the edge contour figure or described of the reticule defective patterns
The edge contour figure of middle normal mask pattern.
Figure is different by various light and shades that differ in size and the black-white point lined up according to certain rules forms.These
Black-white point is referred to as pixel or pixel.It is the minimum basic unit for forming figure.Mask defective patterns and described normally cover
Film pattern, exactly it is made up of the aggregate of various pixels, therefore, can be by reducing mask defective patterns and described normally covering
The pixel of film pattern, and accordingly reduce the critical size of mask defective patterns and the normal mask pattern, wherein, it is available to repair
The graphic processor answered a pager's call on platform enters to the pixel in edlin, namely the control menu (recipe) of modification respective graphical
Pixel-parameters.
Specifically, in one example, Fig. 1 C show the schematic diagram of reticule defective patterns, predetermined to be repaiied using filling
Compound method is repaired to the defects of lithography mask version, then adjusts the pixel of the mask defective patterns, pixel is reduced,
Make the critical dimension reduction of the mask defective patterns, so as to obtain reticule defective patterns；Keep described simultaneously normally to cover
The critical size of film pattern is constant.Wherein, reticule defective patterns just refer to that the mask defective patterns include white space
With the region filled in profile, when reducing the pixel of the mask defective patterns, only reduce the region filled in the profile
Pixel, keep the pixel of white space constant.Wherein, the numerical value of actual adjustment pixel can be according to the chi of specific mask plate
Very little wait carries out reasonable selection, for example, can reduce 1 to 10 unit pixel, makes the proportional reduction of size of mask defective patterns.
And then, as shown in figure iD, the edge feature of the reticule defective patterns is extracted, and is translated into geometry
Graphical format stores, and so as to obtain the edge contour figure of the reticule defective patterns, the Edge Gradient Feature mode is
The usual Edge Gradient Feature method of those skilled in the art.In one embodiment, the geometric figure form is GDS lattice
Formula.Those skilled in the art can also store edge feature data with other geometric figure forms.
Then, as shown in figure 3, by the edge contour figure of the reticule defective patterns and the initial normal mask
Figure carries out overlap ratio pair, identifies underlapped region, the underlapped region is defect area, so as to position the light
The position of defect in mask plate is carved, wherein, can be by way of obtaining defect area position coordinates, to position in lithography mask version
The position of defect.The edge contour figure of the reticule defective patterns and the initial normal mask pattern are carried out overlapping
The method of comparison can be to visually observe or defect automatic detection, or the combination of both modes, and in the present embodiment, preferably
Ground, it is automatically performed above-mentioned steps on defect repair board.
Wherein, the figure that initial normal mask pattern is obtained by proposing the edge feature of normal mask image in abovementioned steps
Shape.
Due to, in this step, the edge contour figure of reticule defective patterns is the mask defective patterns reduced,
Equivalent to the difference being exaggerated between the two when therefore compared with the initial normal mask pattern, the difference namely both
Underlapped region, the region that is to say defect area, because difference is exaggerated, the difference namely depressed part defect, because
This, which is easy to be repaired board automatic detection, comes out, and then exports the information such as coordinate position of defect.
In another example, as shown in Figure 2 C and 2 D shown in FIG., if the predetermined method repaired using the removal is to the light
The defects of carving mask plate is repaired, and is as shown in Figure 2 C the schematic diagram of middle normal mask pattern, is then only reduced described normal
The pixel of mask pattern, make the critical dimension reduction of the normal mask pattern, so as to obtain middle normal mask pattern, keep
The critical size of the mask defective patterns is constant.Wherein, middle normal mask pattern just refers to the normal mask pattern bag
The region filled in white space and profile is included, when reducing the pixel of the normal mask pattern, is only reduced in the profile
The pixel in the region of filling, keep the pixel of white space constant, wherein, the actual numerical value for adjusting pixel can be according to specific
Size of mask plate etc. carries out reasonable selection, for example, 1 to 10 unit pixel can be reduced, make the size of normal mask pattern into
Ratio reduces.
And then, as shown in Figure 2 D, the edge feature of the normal mask pattern in the centre is extracted, and is translated into geometry
Graphical format stores, and so as to obtain the edge contour figure of the normal mask pattern in the centre, the Edge Gradient Feature mode is
The usual Edge Gradient Feature method of those skilled in the art.In one embodiment, the geometric figure form is GDS lattice
Formula.Those skilled in the art can also store edge feature data with other geometric figure forms.
Finally, with reference to figure 3, by the edge contour figure of the normal mask pattern in the centre and the original mask defect map
Shape carries out overlap ratio pair, identifies underlapped region, the underlapped region is defect area, so as to position the photoetching
The position of defect in mask plate.Wherein, can be lacked by way of obtaining defect area position coordinates to position in lithography mask version
Sunken position.The edge contour figure of the normal mask pattern in the centre and the original mask defective patterns are subjected to overlap ratio
To method can be to visually observe or defect automatic detection, or the combination of both modes, and in the present embodiment, preferably
Ground, it is automatically performed above-mentioned steps on defect repair board.
Wherein, the original mask defective patterns are by proposing that the edge feature of mask defect image obtains in abovementioned steps
Figure.
Due in abovementioned steps, having determined that mask pattern defect is protuberance, namely in mask defective patterns
Compared to normal mask pattern, it has protuberance to regional area, and the edge contour figure of middle normal mask pattern reduces
Normal mask pattern, therefore equivalent to the difference being exaggerated between the two, Ye Jixiang when compared with original mask defective patterns
When in being exaggerated the size of the protuberance, therefore it is easy to the protuberance being repaired board automatic detection and comes out, and then exports
The information such as its coordinate position.
Finally, according to position shape the defects of being oriented in abovementioned steps, the defects of corresponding lithography mask version is entered
Row is repaired.Rational repair mode can be selected according to the difference of defect type.
Exemplarily, when defect shape is protuberance, the protuberance corresponds to the light non-transmittable layers being had more on lithography mask version,
Its material can be chromium or other impurity things etc., remove the protuberance using the method for removing reparation, repaired wherein removing
Method can be any method well known to those skilled in the art, for example, it is described remove repair method can use erosion
Carving technology or focused ion beam bombardment, etch process can be the dry method etch technologies such as laser-induced thermal etching, plasma etching.
In one example, when the mask pattern defect shape on lithography mask version is depressed part, caused by the depressed part
Reason is missing of light non-transmittable layers etc., refilling for light-proof material need to be carried out in the depressed part region, to repair the depressed part
Defect, the method for filling depressed part can be the methods of ionic reaction deposits.
During the method for filling depressed part or removal protuberance also has a lot, it is not limited in the side enumerated in the present embodiment
Formula.
The restorative procedure of the present invention is made by reducing the pixels of the mask defective patterns or the normal mask pattern
The mask defective patterns or the size of the normal mask pattern accordingly reduce, and amplify mask defective patterns and normal mask
Not same district between figure, the different zones are defect area, and then readily identify the position for orienting defect area, therefore,
The method of the present invention can be automatically positioned defect repair region by changing control menu parameter, successfully realize micro- to nanoscale
The reparation of defect, the risk that lithography mask version is scrapped is reduced, so as to reduce production cost.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member can also make more kinds of it is understood that the invention is not limited in above-described embodiment according to the teachings of the present invention
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
- A kind of 1. restorative procedure of mask pattern defect, it is characterised in that including：It is corresponding to obtain the SEM image of mask pattern corresponding to mask pattern defective locations and normal mask pattern on lithography mask version The SEM image of position, wherein, the SEM image of mask pattern corresponding to mask pattern defective locations is mask defect image, described The SEM image of normal mask pattern relevant position is normal mask image；The mask defect image and the edge feature of the normal mask image are extracted, and is translated into geometric figure form Storage, so as to obtain original mask defective patterns and initial normal mask pattern；White space in the edge contour of the original mask defective patterns and initial normal mask pattern is filled, from And form mask defective patterns and normal mask pattern；Reduce the mask defective patterns or the pixel of the normal mask pattern, make the mask defective patterns or described The size of normal mask pattern accordingly reduces, so as to obtain reticule defective patterns or middle normal mask pattern respectively；The edge feature of the normal mask pattern of the reticule defective patterns or the centre is extracted, and is translated into several What graphical format storage, so as to obtain the normal mask of the edge contour figure of the reticule defective patterns or the centre The edge contour figure of figure；The edge contour figure of the reticule defective patterns and the initial normal mask pattern are subjected to overlap ratio pair, or Person, the edge contour figure of the normal mask pattern in the centre and the original mask defective patterns are subjected to overlap ratio pair, known Not underlapped region, the underlapped region is defect area, so as to position the position of defect in the lithography mask version Put；The defects of described lithography mask version is repaired.
- 2. restorative procedure as claimed in claim 1, it is characterised in that reducing the mask defective patterns or described normal It is further comprising the steps of before the step of pixel of mask pattern：The lithography mask version is detected, with preliminary judgement pair The defects of mask pattern on the lithography mask version, is filled reparation or removes and repairs.
- 3. restorative procedure as claimed in claim 2, it is characterised in that the method bag detected to the lithography mask version Include：The mask defect image and the normal mask image are subjected to overlap ratio pair, if comparing for mask defect image is normal Mask image includes protuberance defect, then using the method removal protuberance defect for removing and repairing, if mask defect Image includes depressed part defect compared to normal mask image, then the method repaired using the filling is repaired the depressed part and lacked Fall into.
- 4. restorative procedure as claimed in claim 1, it is characterised in that the method that the filling is repaired is sunk using reactive ion Product, the method repaired that removes are bombarded using etch process or focused ion beam.
- 5. restorative procedure as claimed in claim 1, it is characterised in that obtain mask pattern corresponding to mask pattern defective locations Image and normal mask pattern relevant position image the step of before, in addition to step：By with mask pattern defect The lithography mask version is sent into the step of mask pattern defect repair board.
- 6. restorative procedure as claimed in claim 1, it is characterised in that the mask defect image and the normal mask image It is mask pattern corresponding to the mask pattern defective locations gone out in same lay photoetching mask plate photographs and normal mask pattern phase Answer the SEM image of position.
- 7. the restorative procedure according to Claims 2 or 3, it is characterised in that it is described reduce the mask defective patterns or Described in person the step of the pixel of normal mask pattern in, if it is predetermined using filling restorative procedure to the lithography mask version the defects of Repaired, then reduce the pixel of the mask defective patterns, make the critical dimension reduction of the mask defective patterns, keep institute The critical size for stating normal mask pattern is constant；If predetermined lacked using the method for removing reparation to the lithography mask version Capable reparation is trapped into, then reduces the pixel of the normal mask pattern, makes the critical dimension reduction of the normal mask pattern, keeps The critical size of the mask defective patterns is constant.
- 8. restorative procedure according to claim 1, it is characterised in that the mask defective patterns and the normal mask figure Shape includes the region filled in white space and profile, is reducing the mask defective patterns or the normal mask pattern During pixel, only reduce the pixel in the region filled in the profile, keep the pixel of white space constant.
- 9. restorative procedure according to claim 1, it is characterised in that the geometric figure form is graphic design system lattice Formula.
- 10. according to the method for claim 1, it is characterised in that the lithography mask version includes binary form lithography mask version With phase shift lithography mask version.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610642440.6A CN107703715B (en) | 2016-08-08 | 2016-08-08 | Method for repairing mask pattern defects |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610642440.6A CN107703715B (en) | 2016-08-08 | 2016-08-08 | Method for repairing mask pattern defects |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107703715A true CN107703715A (en) | 2018-02-16 |
| CN107703715B CN107703715B (en) | 2020-09-25 |
Family
ID=61169174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610642440.6A Active CN107703715B (en) | 2016-08-08 | 2016-08-08 | Method for repairing mask pattern defects |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107703715B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110490864A (en) * | 2019-08-22 | 2019-11-22 | 易思维（杭州）科技有限公司 | The adaptive defect inspection method of image |
| CN110653494A (en) * | 2018-06-29 | 2020-01-07 | 上海微电子装备（集团）股份有限公司 | Laser repairing device and repairing method |
| CN110836905A (en) * | 2019-11-13 | 2020-02-25 | 上海华力集成电路制造有限公司 | Failure analysis method for automatically identifying physical defects of chip |
| CN112418033A (en) * | 2020-11-11 | 2021-02-26 | 广州数鹏通科技有限公司 | Landslide slope surface segmentation and identification method based on mask rcnn neural network |
| CN112635348A (en) * | 2020-12-16 | 2021-04-09 | 华虹半导体(无锡)有限公司 | Method for establishing mask defect detection program |
| CN112862696A (en) * | 2020-12-31 | 2021-05-28 | 深圳市路维光电股份有限公司 | Mask repair control method and device and computer readable storage medium |
| CN116030047A (en) * | 2023-03-24 | 2023-04-28 | 四川中星电子有限责任公司 | Method for identifying mask qualification in capacitor process |
| WO2023142384A1 (en) * | 2022-01-25 | 2023-08-03 | 深圳晶源信息技术有限公司 | Design layout defect repair method, storage medium and device |
| CN117170181A (en) * | 2023-11-01 | 2023-12-05 | 合肥晶合集成电路股份有限公司 | Mask cleaning method, device and computer readable storage medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101105622A (en) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing light mask image |
| CN101566786A (en) * | 2008-04-24 | 2009-10-28 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing phase shift mask defect |
| CN104317159A (en) * | 2010-03-03 | 2015-01-28 | 中芯国际集成电路制造(上海)有限公司 | Mask graphic defect detection method and mask graphic defect detection system for |
| CN105511222A (en) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
-
2016
- 2016-08-08 CN CN201610642440.6A patent/CN107703715B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101105622A (en) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing light mask image |
| CN101566786A (en) * | 2008-04-24 | 2009-10-28 | 中芯国际集成电路制造(上海)有限公司 | Method for repairing phase shift mask defect |
| CN104317159A (en) * | 2010-03-03 | 2015-01-28 | 中芯国际集成电路制造(上海)有限公司 | Mask graphic defect detection method and mask graphic defect detection system for |
| CN105511222A (en) * | 2014-10-14 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Photomask defect repairing method and photomask |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110653494A (en) * | 2018-06-29 | 2020-01-07 | 上海微电子装备（集团）股份有限公司 | Laser repairing device and repairing method |
| CN110490864B (en) * | 2019-08-22 | 2021-09-21 | 易思维（杭州）科技有限公司 | Self-adaptive defect detection method for image |
| CN110490864A (en) * | 2019-08-22 | 2019-11-22 | 易思维（杭州）科技有限公司 | The adaptive defect inspection method of image |
| CN110836905A (en) * | 2019-11-13 | 2020-02-25 | 上海华力集成电路制造有限公司 | Failure analysis method for automatically identifying physical defects of chip |
| CN112418033A (en) * | 2020-11-11 | 2021-02-26 | 广州数鹏通科技有限公司 | Landslide slope surface segmentation and identification method based on mask rcnn neural network |
| CN112418033B (en) * | 2020-11-11 | 2024-05-03 | 广州数鹏通科技有限公司 | Landslide slope surface segmentation recognition method based on mask rcnn neural network |
| CN112635348A (en) * | 2020-12-16 | 2021-04-09 | 华虹半导体(无锡)有限公司 | Method for establishing mask defect detection program |
| CN112635348B (en) * | 2020-12-16 | 2022-07-19 | 华虹半导体(无锡)有限公司 | Method for establishing mask defect detection program |
| CN112862696A (en) * | 2020-12-31 | 2021-05-28 | 深圳市路维光电股份有限公司 | Mask repair control method and device and computer readable storage medium |
| WO2023142384A1 (en) * | 2022-01-25 | 2023-08-03 | 深圳晶源信息技术有限公司 | Design layout defect repair method, storage medium and device |
| CN116030047A (en) * | 2023-03-24 | 2023-04-28 | 四川中星电子有限责任公司 | Method for identifying mask qualification in capacitor process |
| CN117170181A (en) * | 2023-11-01 | 2023-12-05 | 合肥晶合集成电路股份有限公司 | Mask cleaning method, device and computer readable storage medium |
| CN117170181B (en) * | 2023-11-01 | 2024-01-26 | 合肥晶合集成电路股份有限公司 | Mask cleaning method, device and computer readable storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107703715B (en) | 2020-09-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107703715A (en) | A kind of restorative procedure of mask pattern defect | |
| US9075934B2 (en) | Reticle defect correction by second exposure | |
| US8709682B2 (en) | Mask and method for forming the mask | |
| EP1425787B1 (en) | System and method for identfying dummy features on a mask layer | |
| CN100536091C (en) | Double exposure double resist layer process for forming gate patterns | |
| JP2004511013A (en) | High yield reticle forming method | |
| CN102193302A (en) | Mask image defection detection method and detection system thereof | |
| CN101192007B (en) | Mask plate, mask plate layout design method and defect repairing method | |
| CN104317159A (en) | Mask graphic defect detection method and mask graphic defect detection system for | |
| JP3646415B2 (en) | Mask defect detection method | |
| US20170102609A1 (en) | Method for repairing mask defects | |
| JP2000250198A (en) | Automatic defect checker for photomask and its checking method | |
| CN108073035A (en) | A kind of restorative procedure of lithography mask version and lithography mask version defect | |
| US6737205B2 (en) | Arrangement and method for transferring a pattern from a mask to a wafer | |
| US20060234145A1 (en) | Method for determining and correcting reticle variations | |
| US10990000B2 (en) | Photolithography plate and mask correction method | |
| CN110850677A (en) | Preparation method of photoetching layer mask and ion implantation method | |
| US20220283496A1 (en) | Photomask and method for inspecting photomask | |
| JP4909729B2 (en) | Inspection data creation method and inspection method | |
| JP4899652B2 (en) | Exposure mask inspection apparatus, inspection method, manufacturing method, and exposure mask | |
| Yang et al. | New OPC verification method using die-to-database inspection | |
| JP3470369B2 (en) | Semiconductor device circuit pattern design method and direct writing apparatus | |
| US20230152682A1 (en) | Method for obtaining an exposure data and method for manufacturing an exposure mask using the same | |
| CN100416761C (en) | Method for verifying optical mask | |
| JP2005227689A (en) | Photomask, method for forming pattern, pattern data processing method and program |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |