CN105470151A - 打线构造及焊线形成方法 - Google Patents

打线构造及焊线形成方法 Download PDF

Info

Publication number
CN105470151A
CN105470151A CN201410459888.5A CN201410459888A CN105470151A CN 105470151 A CN105470151 A CN 105470151A CN 201410459888 A CN201410459888 A CN 201410459888A CN 105470151 A CN105470151 A CN 105470151A
Authority
CN
China
Prior art keywords
bonding wire
contact
reinforced structure
wire
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410459888.5A
Other languages
English (en)
Inventor
林伟胜
江连成
王日富
洪隆棠
叶孟宏
朱育德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siliconware Precision Industries Co Ltd
Original Assignee
Siliconware Precision Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconware Precision Industries Co Ltd filed Critical Siliconware Precision Industries Co Ltd
Publication of CN105470151A publication Critical patent/CN105470151A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06506—Wire or wire-like electrical connections between devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

一种打线构造及焊线形成方法，焊线形成方法先提供一收纳有第一焊线与第二焊线的焊件，再将该第一焊线结合至焊垫上，且当该第一焊线未结合至该焊垫上时，自动控制该焊件将该第一焊线结合至该焊垫上，之后形成强化结构于该第二焊线上，再将该强化结构结合至该焊垫与该第一焊线的结合处，所以当该第一焊线未有效结合至该焊垫上时，能于不切换为人工检测模式的情况下，使该焊件继续运作，直到该第一焊线有效结合至焊垫上为止，因而能维持产线的生产力。

Description

打线构造及焊线形成方法
技术领域
本发明涉及一种打线制程，尤指一种焊线形成方法及打线结构。
背景技术
于现有的半导体封装技术中，藉由打线技术(即透过金线或铜线等)将焊线由如晶片的电子元件电性连接至如导线架或封装基板的承载件，该承载件再藉由如焊球的导电元件电性连接至如电路板的外部装置。
现有打线技术(wirebonding)可藉由超音速振动状态，由钢嘴形成最初球体在半导体装置或承载件上，以进行球端加压(ballbond)作业，使焊垫表面与球端相互固接，再由该球体延伸线体至另一半导体装置或承载件的焊垫表面上，以进行接点加压(bond)作业，最后再以钢嘴将多余的焊线剪断。
如图1A所示，其为现有打线设备进行打线制程的剖视示意图，该打线设备具有一如钢嘴的焊件10与线夹(图略)。于进行打线制程的球端加压作业时，一焊线3穿过该焊件10的穿线孔100，且该线夹夹固该焊线3，再利用该焊件10使该焊线3形成一球端30于一电子元件8的电极垫80上。待加温、加压该球端30以使该球端30固接于该电极垫80上后，再拉伸该焊线3至一用于承载该电子元件8的承载件9的焊垫90上。
接着，进行接点加压作业。先使该第一焊线3与该焊垫90电性连接，再向上移动该焊件10(如箭头方向A)，以拉断该焊线3，使保留于该焊件10上的焊线3’产生线尾3a，且该线尾3a伸出该焊件10的下端，以准备进行下一次的打线制程的球端加压作业。
随着电子产业的蓬勃发展，电子产品也逐渐迈向轻薄短小的趋势，所以晶片封装的技术不断缩小，因而所用的焊线的尺寸(如线宽或接点)亦不断缩小，致使增加打线制程的困难度。例如，于进行现有接点加压作业时，该焊线3有时无法有效结合至该焊垫90上，所以当向上移动该焊件10时(如箭头方向A’)，无法拉断该焊线3，如图1B所示，致使无法完成接点加压作业。
因此，遂于现有打线设备设置鸣叫装置，以当发生上述该焊线3未有效结合至该焊垫90上的情况时，该鸣叫装置会自动停止运作并发出警示铃响，以呼叫作业员。
然而，目前当发生该焊线3未结合的情况时，需等待作业员以人工方式进行检测，导致无法继续进行打线制程，以致于产线停滞，所以大幅降低打线设备的生产力，且因检测极为耗时而增加制作成本。具体地，目前该鸣叫装置启动后的作业流程为先请作业员将打线设备切换为手动作业，再确认是否发生该焊线3未结合的现象，之后手动进行打线功能的测试，且手动清除多余线尾，最后，将打线设备切换为自动作业，并确认打线品质。
因此，如何克服现有技术中的问题，实已成目前亟欲解决的课题。
发明内容
鉴于上述现有技术的种种缺失，本发明提供一种打线构造及焊线形成方法，能维持产线的生产力。
本发明的焊线形成方法，包括：提供一具有焊件的焊线设备，该焊件收纳有第一焊线与第二焊线；将该第一焊线结合至接点上，且当该第一焊线未结合至该接点上时，该焊件会自动将该第一焊线结合至该接点上；形成强化结构于该第二焊线上；以及将该强化结构结合至该接点与该第一焊线的结合处。
前述的焊线形成方法中，该接点设于第一电子元件上，且该第一焊线的另一端结合至第二电子元件上。再者，该强化结构还结合至该第一焊线的另一端与该另一电子元件的结合处。
前述的焊线形成方法中，该第一焊线与该第二焊线相连接，且于该第一焊线结合至该接点上时，该第一与第二焊线相分离。
前述的焊线形成方法中，该第二焊线的端部具有强化结构，且该焊件使该强化结构结合至该第一焊线上。例如，该强化结构为以烧结该第二焊线的端部而形成者，使该强化结构为块体。
前述的焊线形成方法中，该焊件使该强化结构结合至该第一焊线上。
前述的焊线形成方法中，该焊线形成方法为正向结合式或反向结合式。
前述的焊线形成方法中，该接点上形成有支撑结构，以令该强化结构与该支撑结构夹设该第一焊线。
本发明还提供一种打线构造，包括：一焊线，其具有相对的第一端与第二端；第一接点，其供结合该焊线的第一端；第二接点，其供结合该焊线的第二端；以及强化结构，其形成至该第二接点上以覆盖于该焊线的第二端上。
前述的打线构造中，该焊线的第一端为球端，且该强化结构为块体。例如，该块体的形状不同于该球端的形状；或者，该块体的形状相同于该球端的形状。
前述的打线构造中，该焊线的第二端为线状。
前述的打线构造中，该第一接点设于电子元件上。例如，该电子元件为主动元件、被动元件或其组合者。
前述的打线构造中，该第二接点设于电子元件上。例如，该电子元件为导线架、封装基板、主动元件、被动元件或其组合者。
前述的打线构造中，该第一接点的位置与该第二接点的位置等高。
前述的打线构造中，该第一接点的位置与该第二接点的位置具有高度差。
前述的打线构造中，该强化结构还形成至该第一接点上以覆盖于该焊线的第一端上。
前述的打线构造中，该第二接点上形成有支撑结构，以令该强化结构与该支撑结构夹设该焊线的第二端。
由上可知，本发明的焊线形成方法及打线构造，藉由自动控制系统的设计，以当该第一焊线未有效结合至该接点上时，能于不切换为人工检测模式的情况下，使该焊件重复接点加压作业的步骤，直到该第一焊线有效结合至接点上为止，所以相较于现有人工方式进行检测，本发明的焊线形成方式不仅能继续进行打线制程以维持焊线设备的生产力，且能省时以大幅降低制作成本。
附图说明
图1A为现有打线制程的剖视示意图；
图1B为图1A的实际情况；
图2A至图2F为本发明的焊线形成方法的剖视示意图；
图3及图3’为本发明的打线结构的不同实施例的剖视示意图；以及
图4A至图4C为本发明的打线结构的其它实施例的剖视示意图。
符号说明
10,20焊件
100,200穿线孔
2,2’,3,3’,7焊线
2a,4a,7a第一端
2b,4b,7b第二端
3a,5a’线尾
30,40球端
4第一焊线
5,5’第二焊线
5a端部
50,50’,70强化结构
60承载件
61第一电子元件
610第一接点
62,62’,62”第二电子元件
620,620’,620”第二接点
70’支撑结构
8电子元件
80电极垫
80’垫部
9承载件
90,90’焊垫
A,A’,A”,B,C,D,E,S,R箭头方向
h高度差。
具体实施方式
以下藉由特定的具体实施例说明本发明的实施方式，本领域技术人员可由本说明书所揭示的内容轻易地了解本发明的其他优点及功效。
须知，本说明书所附图式所绘示的结构、比例、大小等，均仅用于配合说明书所揭示的内容，以供本领域技术人员的了解与阅读，并非用于限定本发明可实施的限定条件，所以不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时，本说明书中所引用的如“上”、“下”、“第一”、“第二”、及“一”等用语，亦仅为便于叙述的明了，而非用于限定本发明可实施的范围，其相对关系的改变或调整，在无实质变更技术内容下，当也视为本发明可实施的范畴。
图2A至图2F为本发明的焊线形成方法的剖视示意图。于本实施例中，所述的焊线形成方法于一设有电子元件8(可视为第一电子元件)的承载件9(可视为第二电子元件)上以焊线设备进行运作，该焊线设备包括焊件20、一线夹(图略)与自动控制系统，且该承载件9上具有至少一焊垫90(可视为第二接点)。
如图2A所示，一第一焊线4穿过该焊件20的穿线孔200，且一第二焊线5收纳于该穿线孔200中并夹设于该线夹中，而该第一焊线4与该第二焊线5相连接。接着，利用该焊件20使该第一焊线4形成一球端40于该电子元件8的电极垫80(可视为第一接点)上。待加温、加压该球端40以使该球端40固接于该电极垫80上后，再拉伸该第一焊线4至该承载件9的焊垫90上。
接着，进行接点加压作业，先使该第一焊线4结合至该焊垫90上以相互电性连接，再向上移动该焊件20(如箭头方向A”)，欲拉断该第一焊线4。
于本实施例中，该第一焊线4未有效结合至该焊垫90上，所以向上移动该焊件20时，该第一焊线4与第二焊线5未相互分离。因此，需对该第一焊线4进行自动重新接点加压作业的工作。
如图2B所示，该焊线设备的自动控制系统会自动命令该焊件20将该第一焊线4再次结合至该焊垫90上，即该焊件20朝该承载件9的方向(即向下，如箭头方向B)移动，以进行接点加压作业。
于本实施例中，该焊线设备可依需求增设鸣叫装置，但不影响整体产线的运作，亦即作业员无需将该焊线设备切换为手动模式，因而无需进行检测。
如图2C所示，于该第一焊线4有效结合至焊垫90上后，向上移动该焊件20(如箭头方向C)，以拉断该第一焊线4，使该第一焊线4与第二焊线5相互分离。
于本实施例中，该第一焊线4的两端分别结合至该电子元件8的电极垫80与该焊垫90上，且于拉断该第一焊线4后，该第二焊线5的一端部5a会伸出该焊件20。
如图2D所示，形成一强化结构50于该第二焊线5上。
于本实施例中，以烧结方式于该第二焊线5的端部5a形成该强化结构50，使该强化结构50为块体，如球状。
如图2E所示，将该焊件20朝该承载件9的方向(即向下，如箭头方向D)移动，以将该强化结构50结合至该焊垫90与该第一焊线4的结合处，再进行加温、加压作业，使该强化结构50将该第一焊线4固压于该焊垫90上，以达到强化该焊垫90与该第一焊线4的结合的功效。
如图2F所示，向上移动该焊件20(如箭头方向E)，以分离该强化结构50与该第二焊线5’，使保留于该焊件20上的第二焊线5’产生线尾5a’，且该线尾5a’伸出该焊件20的下端，以准备进行另一球端加压作业。
本发明的焊线形成方法，藉由该自动控制系统的设计，以当该第一焊线4未有效结合至该焊垫90上时，能于不切换为人工检测模式的情况下，使该焊件20重复接点加压作业的步骤，直到该第一焊线4有效结合至焊垫90上为止，所以相较于现有人工方式进行检测，本发明的焊线形成方式不仅能继续进行打线制程以维持焊线设备的生产力，且能省时以大幅降低制作成本。
本发明还提供一种打线构造，如第2F及3图所示，包括：一焊线2(或第一焊线4)、一第一接点(即垫部80’，如电极垫80)、一第二接点(如焊垫90,90’)以及强化结构50,50’。
所述的焊线2(或第一焊线4)具有相对的第一端2a,4a与第二端2b,4b，该焊线2,4的第一端2a,4a为球端40，而该焊线2(或第一焊线4)的第二端2b,4b为线状。
所述的第一接点(如电极垫80或垫部80’)供结合该焊线2(或第一焊线4)的第一端2a,4a。于本实施例中，该第一接点泛指设于第一电子元件上的外接处，其中，该第一电子元件为主动元件、被动元件或其组合者，且该主动元件例如为半导体晶片，而该被动元件例如为电阻、电容及电感。
所述的第二接点(如焊垫90,90’)供结合该焊线2(或第一焊线4)的第二端2b,4b。于本实施例中，该第二接点泛指设于第二电子元件上的外接处，例如，导线架的导脚、封装基板的接触垫等的承载件或其它电子元件上的接点等，其中，该电子元件为主动元件、被动元件或其组合者，且该主动元件例如为半导体晶片，而该被动元件例如为电阻、电容及电感等。
所述的强化结构50,50’形成至该第二接点上以覆盖于该焊线2(或第一焊线4)的第二端2b,4b上，且该强化结构50,50’为块体。于一实施例中，该强化结构50的形状不同于该球端40的形状；或者，该强化结构50’的形状相同于该球端40的形状。
于一实施例中，如图3’所示，该强化结构50’还形成至该第一接点(即垫部80’，如电子元件8的电极垫80)上以覆盖于该焊线2’(或第一焊线4)的第一端2a,4a上。
因此，所述的强化结构可依需求形成于一焊线的一端或两端上。
另外，如图4A所示，第一电子元件61与第二电子元件62为晶片并位于同一承载件60上，使该第一接点610的位置与该第二接点620的位置等高，一焊线7的第一端7a结合至该第一电子元件61的第一接点610上，且该焊线7的第二端7b结合至该第二电子元件62的第二接点620上，而该强化结构70形成至该第二接点620上以覆盖于该焊线7的第二端7b上。
于本实施例中，打线方式为正向结合(stitchbond)，如箭头方向S，即先将该焊线7的第一端7a结合至该第一接点610上，再将该焊线7的第二端7b结合至该第二接点620上，之后将该强化结构70形成至该第二接点620上。
此外，该第二接点620上可形成有支撑结构70’，以令该强化结构70与该支撑结构70’夹设该焊线7的第二端7b。其中，该支撑结构70’的制法可参考该强化结构50的制法。
又，如图4B所示，该第一电子元件61与该第二电子元件62’为晶片并相互堆迭，使该第一接点610的位置与该第二接点620’的位置具有高度差h。
于另一实施例中，打线方式亦可为反向。具体地，如图4C所示，该第一电子元件61为晶片，且第二电子元件62”为承载该第一电子元件61的承载件，其中，打线方式为反向结合(reversebond)，如箭头方向R，即先将该焊线7的第二端7b结合至该第二电子元件62”的第二接点620”上，再将该焊线7的第一端7a结合至该第一接点610上，之后才将该强化结构70形成至该第二接点620”上(如图中虚线)。
因此，本发明的焊线形成方法适用于正向结合式及反向结合式。
综上所述，本发明的焊线形成方法及打线构造，主要藉由自动化的设计，以当该第一焊线未有效结合至该接点上时，能自动命令该焊件重复接点加压作业的步骤，直到该第一焊线有效结合至接点上为止，所以本发明不仅能继续进行打线制程以维持焊线设备的生产力，且能省时以大幅降低制作成本。
上述实施例仅用于例示性说明本发明的原理及其功效，而非用于限制本发明。任何本领域技术人员均可在不违背本发明的精神及范畴下，对上述实施例进行修改。因此本发明的权利保护范围，应如权利要求书所列。

Claims (25)

1.一种焊线形成方法，包括：
提供一具有焊件的焊线设备，该焊件收纳有相连接的第一焊线与第二焊线；
将该第一焊线结合至接点上，且当该第一焊线未结合至该接点上时，该焊件会自动将该第一焊线结合至该接点上；
形成强化结构于该第二焊线上；以及
将该强化结构结合至该接点与该第一焊线的结合处。
2.如权利要求1所述的焊线形成方法，其特征为，该接点设于电子元件上，且该第一焊线的另一端结合至另一电子元件上。
3.如权利要求2所述的焊线形成方法，其特征为，该强化结构还结合至该第一焊线的另一端与该另一电子元件的结合处。
4.如权利要求1所述的焊线形成方法，其特征为，于该第一焊线结合至该接点上时，该第一与第二焊线相分离。
5.如权利要求1所述的焊线形成方法，其特征为，该强化结构形成于该第二焊线的端部上。
6.如权利要求1所述的焊线形成方法，其特征为，该强化结构为以烧结该第二焊线的端部而形成者。
7.如权利要求1所述的焊线形成方法，其特征为，该强化结构为块体。
8.如权利要求1所述的焊线形成方法，其特征为，该焊件使该强化结构结合至该第一焊线上。
9.如权利要求1所述的焊线形成方法，其特征为，该焊线形成方法为正向结合式或反向结合式。
10.如权利要求1所述的焊线形成方法，其特征为，该接点上形成有支撑结构，以令该强化结构与该支撑结构夹设该第一焊线。
11.一种打线构造，包括：
一焊线，其具有相对的第一端与第二端；
第一接点，其供结合该焊线的第一端；
第二接点，其供结合该焊线的第二端；以及
强化结构，其形成至该第二接点上以覆盖于该焊线的第二端上。
12.如权利要求11所述的打线构造，其特征为，该焊线的第一端为球端。
13.如权利要求12所述的打线构造，其特征为，该强化结构为块体。
14.如权利要求13所述的打线构造，其特征为，该块体的形状不同于该球端的形状。
15.如权利要求13所述的打线构造，其特征为，该块体的形状相同于该球端的形状。
16.如权利要求11所述的打线构造，其特征为，该焊线的第二端为线状。
17.如权利要求11所述的打线构造，其特征为，该强化结构为块体。
18.如权利要求11所述的打线构造，其特征为，该第一接点设于电子元件上。
19.如权利要求18所述的打线构造，其特征为，该电子元件为主动元件、被动元件或其组合者。
20.如权利要求11所述的打线构造，其特征为，该第二接点设于电子元件上。
21.如权利要求20所述的打线构造，其特征为，该电子元件为导线架、封装基板、主动元件、被动元件或其组合者。
22.如权利要求11所述的打线构造，其特征为，该第一接点的位置与该第二接点的位置等高。
23.如权利要求11所述的打线构造，其特征为，该第一接点的位置与该第二接点的位置具有高度差。
24.如权利要求11所述的打线构造，其特征为，该强化结构还形成至该第一接点上以覆盖于该焊线的第一端上。
25.如权利要求11所述的打线构造，其特征为，该第二接点上形成有支撑结构，以令该强化结构与该支撑结构夹设该焊线的第二端。
CN201410459888.5A 2014-08-27 2014-09-11 打线构造及焊线形成方法 Pending CN105470151A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW103129481A TWI567839B (zh) 2014-08-27 2014-08-27 打線構造及銲線形成方法
TW103129481 2014-08-27

Publications (1)

Publication Number Publication Date
CN105470151A true CN105470151A (zh) 2016-04-06

Family

ID=55607725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410459888.5A Pending CN105470151A (zh) 2014-08-27 2014-09-11 打线构造及焊线形成方法

Country Status (2)

Country Link
CN (1) CN105470151A (zh)
TW (1) TWI567839B (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1700433A (zh) * 2004-05-20 2005-11-23 三星Techwin株式会社 丝焊方法及采用该方法的丝焊机
US20070108256A1 (en) * 2005-11-14 2007-05-17 Kabushiki Kaisha Shinkawa Wire bonding method
CN101174604A (zh) * 2006-11-02 2008-05-07 罗姆股份有限公司 电子部件和导线结合方法
TW200926319A (en) * 2007-12-07 2009-06-16 Shinkawa Kk Wire bonding device and wire bonding method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1211178C (zh) * 2000-05-04 2005-07-20 德克萨斯仪器股份有限公司 减少集成电路焊接机焊接程序误差的系统与方法
JP2004172477A (ja) * 2002-11-21 2004-06-17 Kaijo Corp ワイヤループ形状、そのワイヤループ形状を備えた半導体装置、ワイヤボンディング方法及び半導体製造装置
TWI253134B (en) * 2003-11-17 2006-04-11 Siliconware Precision Industries Co Ltd Method for enhancing bonding reliability of wire bonding process
JP3786281B2 (ja) * 2004-11-05 2006-06-14 株式会社カイジョー ワイヤボンディング装置
JP2008034567A (ja) * 2006-07-27 2008-02-14 Fujitsu Ltd 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1700433A (zh) * 2004-05-20 2005-11-23 三星Techwin株式会社 丝焊方法及采用该方法的丝焊机
US20070108256A1 (en) * 2005-11-14 2007-05-17 Kabushiki Kaisha Shinkawa Wire bonding method
CN101174604A (zh) * 2006-11-02 2008-05-07 罗姆股份有限公司 电子部件和导线结合方法
TW200926319A (en) * 2007-12-07 2009-06-16 Shinkawa Kk Wire bonding device and wire bonding method

Also Published As

Publication number Publication date
TWI567839B (zh) 2017-01-21
TW201608655A (zh) 2016-03-01

Similar Documents

Publication Publication Date Title
CN101114628A (zh) 半导体器件及其制造方法
CN101266932A (zh) 芯片封装结构及其制作方法
CN101281876A (zh) 半导体器件的制造方法以及半导体器件
JP2005039192A (ja) 半導体装置及びワイヤボンディング方法
CN104347549A (zh) 半导体器件及其制造方法
CN1842394A (zh) 丝线焊接绝缘丝线及其毛细管
US20160247777A1 (en) Wire bonding method
KR20050091932A (ko) 미세 피치 범프에의 리버스 와이어 본딩 방법 및 이에의한 와이어 본드 구조체
CN210692492U (zh) 垂直打线设备
CN105470151A (zh) 打线构造及焊线形成方法
US11145617B2 (en) Semiconductor structure
JP2007150144A (ja) 半導体装置およびその製造方法
CN108878390A (zh) 梳状凸块结构及其制造方法
CN105405778A (zh) 打线装置及排除不良焊线的方法
CN112652549A (zh) 垂直打线设备及打线方法
CN101872729B (zh) 打线设备及其保护气体自动切换系统与方法
US9793238B2 (en) Copper wire and electrode joining method and joint structure
CN101431059A (zh) 打线结构及方法
CN102856281A (zh) 半导体封装件及其制造方法
CN113345860B (zh) 芯片封装结构及其制造方法
CN213878074U (zh) 一种引线键合工艺用基板
CN205984901U (zh) 一种用于铝线键合的劈刀结构
CN106057693B (zh) 一种ic封装引线键合短接结构及其制备方法
CN104934337A (zh) 焊线形成方法及其焊线设备
JP2022105191A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20160406

RJ01 Rejection of invention patent application after publication