CN105449075A - 一种新型贴片二极管制造工艺及其专用焊接模具 - Google Patents
一种新型贴片二极管制造工艺及其专用焊接模具 Download PDFInfo
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Abstract
本发明涉及一种新型贴片二极管制造工艺,包括采用专用焊接模具,将芯片、焊片、连接片进行精确定位后进行焊接,进而芯片和连接片构成稳定的Z字形结构及采用激光焊接机,将上框架向下折弯段外端与P极连接片外端的重合处进行激光焊接固定,再将下框架的向上折弯段外端与N极连接片外端的重合处进行激光焊接固定;实现新型贴片二极管制造工艺的专用焊接模具,该专用焊接模具包括焊接模具本体,模具本体上分布有若干焊接腔,该焊接腔由主腔的两侧分别设置与主腔直接连通的第一副腔和第二副腔构成。本发明的优点在于:由于贴片二极管的上、下框架的一部分用连接片代替,芯片、焊片、连接片通过专用焊接模具进行精确定位,解决了芯片偏移的现象。
Description
技术领域
本发明涉及一种新型贴片二极管制造工艺,还涉及一种实现新型贴片二极管制造工艺的专用焊接模具。
背景技术
目前市场上的贴片二极管系列产品均采用直接将芯片、焊片、上框架、下框架置于焊接模具中,再将焊接模具放置于焊接炉进行软钎焊接。该方法的缺陷在于:上、下框架通过销孔定位的方式,固定在焊接模具上。在焊接过程中框架受热会膨胀,框架的热膨胀系数与芯片有差异,会对芯片产生焊接应力,且存在芯片偏移现象,造成焊接不良、焊接应力过大等问题,影响产品的电性良率和可靠性能,从而导致产品在后期使用过程中出现失效。具体工艺流程如下:下框架装填→装填下焊片→筛装芯片→装填上焊片→装填上框架→焊接→模压→后固化→电镀→切筋、成型→测试、印字→包装→出货。
以上工艺生产的产品,由于焊接应力和芯片偏移现象,制约了此类产品的电性良率提升(目前行业电性良率93%)。
此外,产品在采用不同规格尺寸的芯片时,其采用的上、下框架规格尺寸也不一致,因此,需要采用多规格的框架冲压模具和焊接模具,造成生产成本的上升。
发明内容
本发明要解决的技术问题是提供一种定位准确、焊接应力极低且成本较低的新型贴片二极管制造工艺,还提供一种实现新型贴片二极管制造工艺的专用焊接模具。
为解决上述技术问题,本发明的技术方案为:一种新型贴片二极管制造工艺,其创新点在于:所述步骤具体为:
(1)利用专用焊接模具将芯片、焊片和无氧铜连接片进行精确定位,使P极连接片水平引伸出芯片的P电极,N极连接片水平引伸出芯片的N电极;然后将专用焊接模具置于隧道炉中进行焊接,焊片熔化后,使P极连接片、N极连接片和芯片构成稳定的Z字形结构;
(2)将焊接有连接片的芯片,通过智能机械手取出,放置在激光焊接工装上;再将内侧分布有若干引线支架的上、下框架放置于对应的激光焊接工装上;上框架的引线端部设有一向下的折弯段,下框架的引线端部设有一向上折弯段;利用激光焊接机,将上框架向下折弯段外端与P极连接片外端的重合处进行激光焊接固定,再将下框架的向上折弯段外端与N极连接片外端的重合处进行激光焊接固定;再依次经过常规的模压、后固化、电镀、切筋成型工序,最后经检测合格出货。
进一步地,所述步骤(1)焊接的峰值温度为360~375℃,时间为7~12min。
进一步地,所述步骤(2)激光焊接的电流为60~400A,频率为10~30Hz,焊接速度为100~500mm/min。
一种实现新型贴片二极管制造工艺的专用焊接模具,其创新点在于:所述专用焊接模具包括焊接模具本体,模具本体上分布有若干焊接腔,该焊接腔由主腔的两侧分别设置与主腔直接连通的第一副腔和第二副腔构成;
所述主腔为一刚好可嵌合芯片的非贯通式腔体,主腔的水平截面为刚好可嵌合芯片的形状,且H1≥H总,其中,H1为主腔的深度,H总为P极连接片、芯片、N极连接片以及设置在芯片与P极连接片、N极连接片之间焊片的堆叠总厚度;
所述第一副腔为一紧贴主腔侧壁中心设置的腔体,该第一副腔的水平截面为刚好可嵌合P极连接片或N极连接片伸出段的形状,且H2=H1,其中,H2为第一副腔的深度;
所述第二副腔为一紧贴主腔侧壁中心设置且浅于主腔的腔体,该第二副腔的水平截面为刚好可嵌合另一连接片伸出段的形状,且H1≥H3≥H4,H3为第二副腔的深度,H4为N极连接片或P极连接片的厚度。
本发明的优点在于:
(1)由于贴片二极管的上、下框架的一部分用连接片代替,可以对芯片、焊片、连接片通过专用焊接模具进行精确定位,解决了芯片偏移的现象。
(2)连接片在与芯片的焊接过程中,不存在销孔定位,在受热膨胀和降温收缩过程处于自由状态,焊接应力极低。
(3)与传统结构的制造方法相比,本发明的贴片二极管,制造过程中采用的上、下框架,而与芯片连接的部分采用连接片代替;这样,在采用不同规格尺寸的芯片制作二极管时,仅仅是与芯片连接的连接片规格不同,而上、下框架能够采用相同的规格,进而在进行激光焊接时模具可以共用,降低框架冲压模具成本。
(4)由于在与芯片连接过程中采用了连接片来确保与芯片的电连接性能,其可降低上、下框上引线的宽度,使得相邻引线段间的距离大于引线自身的宽度,这样,在冲压制作上、下框架时,可以使得上、下框架可以错开使用,进而提高了铜材的利用率。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明。
图1是本发明制造的新型贴片二极管的剖面图。
图2是本发明新型贴片二极管制造工艺中专用焊接模具的俯视图。
图3是本发明制造新型贴片二极管使用的上、下框架的结构示意图。
图4是传统制造贴片二极管使用的上、下框架的结构示意图。
具体实施方式
下面的实施例可以使本专业的技术人员更全面地理解本发明,但并不因此将本发明限制在所述的实施例范围之中。
实施例1
本实施例新型贴片二极管制造工艺,所述步骤具体如下:
(1)如图1所示,利用专用焊接模具将芯片1、焊片2和无氧铜连接片3进行精确定位,使P极连接片水平引伸出芯片的P电极,N极连接片水平引伸出芯片的N电极;然后将专用焊接模具置于隧道炉中在360℃温度下焊接7min,焊片熔化后,使P极连接片、N极连接片和芯片构成稳定的Z字形结构;
(2)将焊接有连接片3的芯片1,通过智能机械手取出,放置在激光焊接工装上;再将内侧分布有若干引线支架的框架4放置于对应的激光焊接工装上;如图3所示,上框架11的引线端部设有一向下的折弯段,下框架12的引线端部设有一向上折弯段;如图1所示,利用激光焊接机,将上框架向下折弯段外端与P极连接片外端的重合处5进行激光焊接固定,再将下框架的向上折弯段外端与N极连接片外端的重合处5进行激光焊接固定;激光焊接的电流为60A,频率为10Hz,焊接速度为100mm/min;
(3)再依次经过常规的模压、后固化、电镀、切筋成型工序,最后经检测合格出货。
实施例2
本实施例新型贴片二极管制造工艺,所述步骤具体如下:
(1)如图1所示,利用专用焊接模具将芯片1、焊片2和无氧铜连接片3进行精确定位,使P极连接片水平引伸出芯片的P电极,N极连接片水平引伸出芯片的N电极;然后将专用焊接模具置于隧道炉中在375℃温度下焊接12min,焊片熔化后,使P极连接片、N极连接片和芯片构成稳定的Z字形结构;
(2)将焊接有连接片3的芯片1,通过智能机械手取出,放置在激光焊接工装上;再将内侧分布有若干引线支架的框架4放置于对应的激光焊接工装上;如图3所示,上框架11的引线端部设有一向下的折弯段,下框架12的引线端部设有一向上折弯段;如图1所示,利用激光焊接机,将上框架向下折弯段外端与P极连接片外端的重合处5进行激光焊接固定,再将下框架的向上折弯段外端与N极连接片外端的重合处5进行激光焊接固定;激光焊接的电流为400A,频率为30Hz,焊接速度为500mm/min;
(3)再依次经过常规的模压、后固化、电镀、切筋成型工序,最后经检测合格出货。
实施例3
本实施例新型贴片二极管制造工艺,所述步骤具体如下:
(1)如图1所示,利用专用焊接模具将芯片1、焊片2和无氧铜连接片3进行精确定位,使P极连接片水平引伸出芯片的P电极,N极连接片水平引伸出芯片的N电极;然后将专用焊接模具置于隧道炉中在370℃温度下焊接10min,焊片熔化后,使P极连接片、N极连接片和芯片构成稳定的Z字形结构;
(2)将焊接有连接片3的芯片1,通过智能机械手取出,放置在激光焊接工装上;再将内侧分布有若干引线支架的框架4放置于对应的激光焊接工装上;如图3所示,上框架11的引线端部设有一向下的折弯段,下框架12的引线端部设有一向上折弯段;如图1所示,利用激光焊接机,将上框架向下折弯段外端与P极连接片外端的重合处5进行激光焊接固定,再将下框架的向上折弯段外端与N极连接片外端的重合处5进行激光焊接固定;激光焊接的电流为230A,频率为20Hz,焊接速度为300mm/min;
(3)再依次经过常规的模压、后固化、电镀、切筋成型工序,最后经检测合格出货。
实施例1~3中所用的专用焊接模具,如图2所示,专用焊接模具包括焊接模具本体6,焊接模具本体上6分布有若干焊接腔7,该焊接腔7由主腔8的两侧分别设置与主腔8直接连通的第一副腔9和第二副腔10构成;
主腔8为一刚好可嵌合芯片1的非贯通式腔体,主腔8的水平截面为刚好可嵌合芯片1的形状,且H1≥H总,其中,H1为主腔8的深度,H总为P极连接片、芯片1、N极连接片以及设置在芯片1与P极连接片、N极连接片之间焊片2的堆叠总厚度;
第一副腔9为一紧贴主腔8侧壁中心设置的腔体,该第一副腔9的水平截面为刚好可嵌合P极连接片或N极连接片伸出段的形状,且H2=H1,其中,H2为第一副腔9的深度;
第二副腔10为一紧贴主腔8侧壁中心设置且浅于主腔8的腔体,该第二副腔10的水平截面为刚好可嵌合另一连接片伸出段的形状,且H1≥H3≥H4,H3为第二副腔10的深度,H4为N极连接片或P极连接片的厚度。
图3、4为分别示出本发明和传统贴片二极管制造过程中的上、下框架的结构示意图。
贴片二极管在制造过程中使用的框架如图4所示,包括上框架13与下框架14,相邻引线段间的距离小于引线段的宽度,不能将两框架错开使用(阴影部分为会浪费的铜材部分),进而铜材利用率低。
从图3中可以看出,由于采用连接片来确保与不同规格的芯片焊接,而非上、下框架的引线,因此本发明方法制作的二极管中所用的上、下框架引线可将宽度设置成小于相邻引线之间的间隙,因此,可采用错开排布的方式,利用上框架引线之间的间隙制作下框架的部分引线,降低制作上、下框架所需的铜材。
本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (4)
1.一种新型贴片二极管制造工艺,其特征在于所述步骤为:
(1)利用专用焊接模具将芯片、焊片和无氧铜连接片进行精确定位,使P极连接片水平引伸出芯片的P电极,N极连接片水平引伸出芯片的N电极;然后将专用焊接模具置于隧道炉中进行焊接,焊片熔化后,使P极连接片、N极连接片和芯片构成稳定的Z字形结构;
(2)将焊接有连接片的芯片,通过智能机械手取出,放置在激光焊接工装上;再将内侧分布有若干引线支架的上、下框架放置于对应的激光焊接工装上;上框架的引线端部设有一向下的折弯段,下框架的引线端部设有一向上折弯段;利用激光焊接机,将上框架向下折弯段外端与P极连接片外端的重合处进行激光焊接固定,再将下框架的向上折弯段外端与N极连接片外端的重合处进行激光焊接固定;再依次经过常规的模压、后固化、电镀、切筋成型工序,最后经检测合格出货。
2.根据权利要求1所述的新型贴片二极管制造工艺,其特征在于:所述步骤(1)焊接的峰值温度为360~375℃,时间为7~12min。
3.根据权利要求1所述的新型贴片二极管制造工艺,其特征在于:所述步骤(2)激光焊接的电流为60~400A,频率为10~30Hz,焊接速度为100~500mm/min。
4.一种实现权利要求1所述新型贴片二极管制造工艺中的专用焊接模具,其特征在于:所述专用焊接模具包括焊接模具本体,模具本体上分布有若干焊接腔,该焊接腔由主腔的两侧分别设置与主腔直接连通的第一副腔和第二副腔构成;
所述主腔为一刚好可嵌合芯片的非贯通式腔体,主腔的水平截面为刚好可嵌合芯片的形状,且H1≥H总,其中,H1为主腔的深度,H总为P极连接片、芯片、N极连接片以及设置在芯片与P极连接片、N极连接片之间焊片的堆叠总厚度;
所述第一副腔为一紧贴主腔侧壁中心设置的腔体,该第一副腔的水平截面为刚好可嵌合P极连接片或N极连接片伸出段的形状,且H2=H1,其中,H2为第一副腔的深度;
所述第二副腔为一紧贴主腔侧壁中心设置且浅于主腔的腔体,该第二副腔的水平截面为刚好可嵌合另一连接片伸出段的形状,且H1≥H3≥H4,H3为第二副腔的深度,H4为N极连接片或P极连接片的厚度。
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