CN105448645A - Bonding pad processing method - Google Patents
Bonding pad processing method Download PDFInfo
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- CN105448645A CN105448645A CN201410321003.5A CN201410321003A CN105448645A CN 105448645 A CN105448645 A CN 105448645A CN 201410321003 A CN201410321003 A CN 201410321003A CN 105448645 A CN105448645 A CN 105448645A
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- weld pad
- processing method
- carried out
- bonding pad
- treatment
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Abstract
The invention discloses a bonding pad processing method. The method comprises providing a front-end structure, wherein the front-end structure comprises a bonding pad obtained through primary treatment; carrying out hydrophobic treatment on the bonding pad; carrying out annealing treatment on the bonding pad; and carrying out cleaning processing on the bonding pad. According to the method, moisture contact capability of the bonding pad is reduced through the hydrophobic treatment, and meanwhile, the content of fluorine ions is reduced through the annealing treatment, thereby effectively reducing contact of substance, which is corrosive to the bonding pad, with the bonding pad, enabling the quality of the bonding pad to be ensured, and helping to improve the quality of bonding process.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of processing method of weld pad.
Background technology
In manufacture of semiconductor process, the bonding (waferbonding) of wafer is operation very important together.The wafer of different materials can combine by this technology.Conventional bonding techniques has that silicon-silicon bond conjunction, silicon on glass bonding, metal are diffusion interlinked, polymer bonding bonding etc.This technology can be applied in multiple technical field of semiconductors, such as 3D-TSV, HB-LED, SOI, MEMS etc., and has been considered to one of important technology of semicon industry development.
According to different applications, the technological parameter of the bonding of wafer can have difference, but its general principle is similar, namely by bonding point (i.e. weld pad) by applying in vacuum environment the combination that the means such as pressure reach different wafer.The bonding of wafer requires accurate strict, therefore often occurs bonding failure phenomenon, the physical impact of such as bonding apparatus, aims at the failure that the reasons such as contact between inaccuracy, wafer is not good all can cause bonding.And the failure of wafer bonding will drastically influence the reliability of chip, govern the yield of product.Study discovery through inventor, weld pad (pad) surface abnormalities, causes surface state poor, makes the contact between wafer not good, and this is the key factor causing bonding failure.How improving this situation, is a problem demanding prompt solution.
Summary of the invention
The object of the invention is to, a kind of processing method of weld pad is provided, improve the problem of bonding quality difference in prior art.
For solving the problems of the technologies described above, the invention provides a kind of processing method of weld pad, comprising:
There is provided front-end architecture, described front-end architecture includes the weld pad through preliminary treatment;
Hydrophobic treatment is carried out to described weld pad;
Annealing in process is carried out to described weld pad; And
Clean is completed to described weld pad.
Optionally, for the processing method of described weld pad, described hydrophobic treatment for apply one deck hydrophobic substance on described weld pad.
Optionally, for the processing method of described weld pad, described hydrophobic substance contains methyl.
Optionally, for the processing method of described weld pad, described hydrophobic substance is HMDS.
Optionally, for the processing method of described weld pad, 160 DEG C ~ 200 DEG C, under the environment that is full of gaseous state HMDS, described weld pad is placed in this environment and carries out hydrophobic treatment.
Optionally, for the processing method of described weld pad, the environment that described weld pad is placed in gaseous state HMDS continues 100 seconds ~ 180 seconds.
Optionally, for the processing method of described weld pad, described annealing in process is carried out under nitrogen atmosphere, and the temperature range of annealing is 180 DEG C ~ 200 DEG C, continues 2 ~ 2.5 hours.
Optionally, for the processing method of described weld pad, described preliminary treatment for form passivation layer on a top-level metallic, and etches described passivation layer formation opening, and described opening exposes the described top-level metallic of part, using the described top-level metallic exposed as weld pad.
Optionally, for the processing method of described weld pad, describedly clean completed to described weld pad comprise:
Ashing process is carried out to described weld pad;
Wet-cleaned is carried out to described weld pad; And
Alloy technique is carried out to described weld pad.
Compared with prior art, in the processing method of weld pad provided by the invention, comprise and hydrophobic treatment is carried out to described weld pad, and annealing in process is carried out to described weld pad.Hydrophobic treatment is utilized to reduce the engagement capacity of weld pad and moisture, reduced the content of fluorine ion by annealing in process simultaneously, and then effectively decrease and can have the contact of rodent material and weld pad by butt welding spacer, the quality of weld pad is guaranteed, is conducive to the quality improving bonding technology.
Accompanying drawing explanation
Fig. 1 is the flow chart of the processing method of weld pad in the embodiment of the present invention;
Fig. 2 a be weld pad of the prior art and contact with moisture time schematic diagram;
Fig. 2 b be weld pad in the embodiment of the present invention after treatment with schematic diagram during contact with moisture.
Embodiment
Be described in more detail below in conjunction with the processing method of schematic diagram to weld pad of the present invention, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Inventor finds through long-term research, the main cause of weld pad defect is caused to be the imperfection of manufacture craft, the manufacturing process of current weld pad is included on top-level metallic and covers one deck passivation layer, afterwards opening is carried out to this passivation layer, expose required Portions of top layer metal, and adopt wet clean process to be cleaned by weld pad further.Preferably, described top-level metallic is chosen as metallic aluminium, adopts dry etch process to carry out opening to passivation layer, specifically adopts the CF comprising plasma state
4, CHF
3, SF
6deng material, the fluorine ion in these materials can corrode the surface of metallic aluminium, and the moisture in the follow-up wet cleaning processes carried out can worsen this situation.Specifically have and react generation as follows:
Al+3F
-→AlF
3+3e
-
Al+6F
-→[AlF
6]
3-+3e
-
4Al+3O
2+6H
2O→4Al
3++12OH
-→4Al(OH)
3
[AlF
x]
(x-3)-+ Al
2o
3→ Al
xo
yf
z, wherein x, y, z is positive integer.
Due to the generation of these reactions and the formation of product, just can cause weld pad degradation, affect bonding.Therefore, inventor, for this discovery, carries out existing technique perfect, has carried out hydrophobic treatment, and anneal to weld pad, so effectively can to reduce contacting of moisture and fluorine ion and metallic aluminium, thus can obtain high-quality weld pad.
Below enumerate the preferred embodiment of the processing method of described weld pad, to clearly demonstrate content of the present invention, will be clear that, content of the present invention is not restricted to following examples, and other improvement by the routine techniques means of those of ordinary skill in the art are also within thought range of the present invention.
There is provided the preferred embodiment of the processing method of weld pad below, please refer to Fig. 1, Fig. 1 is the flow chart of the processing method of weld pad in the embodiment of the present invention.
First, carry out step S101, provide front-end architecture, described front-end architecture includes the weld pad through preliminary treatment.Concrete, provide a substrate, described substrate comprises Semiconductor substrate and is formed at the necessary layer such as metal level on described substrate, and described based top layer is a top-level metallic, the better metallic aluminium that is chosen as of the material of described top-level metallic, and its thickness can be
.On top-level metallic, cover a passivation layer afterwards, described passivation layer can be the passivation layer of the individual layer such as silicon oxide layer, silicon nitride layer, also can be the overlayer passivation layer be made up of silicon oxide layer and silicon oxynitride layer.Wherein, overlayer passivation layer has better thermodynamics and mechanical performance than individual layer passivation layer, in encapsulation process, can absorb the mechanical stress with negative function on weld pad and thermal stress, the various stress produced when guaranteeing to encapsulate can not cause mechanical damage to weld pad.Certainly, the present invention is not limited to this, and those skilled in the art can select the material of passivation layer according to actual needs flexibly.Preferably, described passivation layer can adopt chemical vapor deposition method to be formed, and this process is ripe, does not repeat at this.Then utilize dry etch process to carry out opening to described passivation layer, expose Portions of top layer metal, this part top-level metallic exposed is as weld pad, same, and this lithographic technique is well known to those skilled in the art, and is not described in detail in this.
Then, carry out step S102, hydrophobic treatment is carried out to described weld pad.Concrete, described hydrophobic treatment for apply one deck hydrophobic substance on described weld pad.In a preferred embodiment of the invention, described hydrophobic substance is HMDS (HMDO, Hexamethyldisiloxane), methyl group in HMDS makes HMDS be provided with hydrophobicity, therefore, in the selection of hydrophobic substance, be not limited to be only HMDS, other organic substances containing methyl also can be used as selection, but consider that not any organic substance containing methyl can be used as hydrophobic treatment, and therefore insider should arouse attention when carrying out other selections.Preferably, utilize HMDS to carry out hydrophobic treatment to weld pad to be, the temperature ranges of 160 DEG C ~ 200 DEG C, be full of gaseous state HMDS environment under, described weld pad is placed in this environment, continues 100 seconds ~ 180 seconds.Preferably, can process when 170 DEG C ~ 180 DEG C, the reaction time between 120 seconds ~ 140 seconds, thus guarantees form one deck hydrophobic film on weld pad surface.
Please refer to Fig. 2 a and Fig. 2 b, Fig. 2 a and show the weld pad of prior art and the contact schematic diagram of moisture, Fig. 2 b shows the contact schematic diagram of embodiment of the present invention weld pad and moisture after hydrophobic treatment.From Fig. 2 a and Fig. 2 b, in prior art, because the hydrophily of weld pad 1 is very strong, moisture 2 can bedding be on weld pad 1 substantially, and this is after dry etching, greatly facilitates the erosion of fluorine ion to weld pad.And after process of the present invention, the hydrophily of weld pad 1 is weakened severely, moisture 2 greatly reduces with the contact area of weld pad 1, and this just effectively weakens the erosion to weld pad 2.
Afterwards, carry out step S103, annealing in process is carried out to described weld pad.Although through hydrophobic treatment, reduce effective contact area of moisture and weld pad, the existence of fluorine ion still can have an impact to weld pad.Therefore, in a preferred embodiment of the invention, anneal to described weld pad, preferably, anneal under described weld pad is placed in nitrogen atmosphere, preferably, the temperature range of annealing can be 180 DEG C ~ 200 DEG C, and the duration is 2 ~ 2.5 hours.So can either reduce the content of fluorine ion, also moisture can be made to evaporate, thus dropping to of further may being suffered erosion by weld pad is minimum, this guarantees the smooth and pure of weld pad surface, be conducive to the high-quality bonding completing wafer, improve the yield of product.
Then, carry out step S104, clean is completed to described weld pad.In a preferred embodiment of the invention, first carrying out ashing process to described weld pad, preferably, adopt dry etch process, such as, can be adopt the CF comprising plasma state equally
4, CHF
3, SF
6etch Deng material, substantially identical with the technique of passivation layer being carried out to opening, but the consumption of reaction time and reactant can appropriate change as required.Then carry out wet-cleaned, such as, adopt hydrofluoric acid solution etc., the product etc. when passivation layer opening is eliminated and removed.Carry out alloy technique again, by alloy technique, effectively can improve the surface state of weld pad, the high-quality weld pad of final acquisition.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. a processing method for weld pad, comprising:
There is provided front-end architecture, described front-end architecture includes the weld pad through preliminary treatment;
Hydrophobic treatment is carried out to described weld pad;
Annealing in process is carried out to described weld pad; And
Clean is completed to described weld pad.
2. the processing method of weld pad as claimed in claim 1, it is characterized in that, described hydrophobic treatment for apply one deck hydrophobic substance on described weld pad.
3. the processing method of weld pad as claimed in claim 2, it is characterized in that, described hydrophobic substance contains methyl.
4. the processing method of weld pad as claimed in claim 3, it is characterized in that, described hydrophobic substance is HMDS.
5. the processing method of weld pad as claimed in claim 4, is characterized in that, 160 DEG C ~ 200 DEG C, under the environment that is full of gaseous state HMDS, described weld pad is placed in this environment and carries out hydrophobic treatment.
6. the processing method of weld pad as claimed in claim 5, is characterized in that, the environment that described weld pad is placed in gaseous state HMDS continues 100 seconds ~ 180 seconds.
7. the formation method of the processing method of weld pad as claimed in claim 1, it is characterized in that, described annealing in process is carried out under nitrogen atmosphere, and the temperature range of annealing is 180 DEG C ~ 200 DEG C, continues 2 ~ 2.5 hours.
8. the formation method of the processing method of weld pad as claimed in claim 1, it is characterized in that, described preliminary treatment for form passivation layer on a top-level metallic, and etch described passivation layer formation opening, described opening exposes the described top-level metallic of part, using the described top-level metallic exposed as weld pad.
9. the formation method of the processing method of weld pad as claimed in claim 1, is characterized in that, describedly completes clean to described weld pad and comprises:
Ashing process is carried out to described weld pad;
Wet-cleaned is carried out to described weld pad; And
Alloy technique is carried out to described weld pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410321003.5A CN105448645A (en) | 2014-07-07 | 2014-07-07 | Bonding pad processing method |
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|---|---|---|---|
| CN201410321003.5A CN105448645A (en) | 2014-07-07 | 2014-07-07 | Bonding pad processing method |
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| CN105448645A true CN105448645A (en) | 2016-03-30 |
Family
ID=55558716
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164894A (en) * | 2019-05-28 | 2019-08-23 | 上海华力微电子有限公司 | A kind of bonding method |
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| US20080128851A1 (en) * | 2004-09-13 | 2008-06-05 | Shin-Etsu Handotai Co., Ltd. | Method Of Manufacturing Soi Wafer And Thus-Manufactured Soi Wafer |
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| US20110000508A1 (en) * | 2009-07-02 | 2011-01-06 | L'Air Liquide, Societe Anonyme pour I'Etude et l'Exploitation des Procedes Georges Claude | Method of removing residual fluorine from deposition chamber |
| TW201221607A (en) * | 2010-10-11 | 2012-06-01 | Henkel Corp | Self-aligning adhesive using solvent and solventless organic resin system in electronic packaging |
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2014
- 2014-07-07 CN CN201410321003.5A patent/CN105448645A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5312776A (en) * | 1991-11-18 | 1994-05-17 | Matsushita Electric Industrial Co., Ltd. | Method of preventing the corrosion of metallic wirings |
| KR100620188B1 (en) * | 2002-12-30 | 2006-09-01 | 동부일렉트로닉스 주식회사 | Method for forming a bonding pad in a semiconductor device |
| US20080128851A1 (en) * | 2004-09-13 | 2008-06-05 | Shin-Etsu Handotai Co., Ltd. | Method Of Manufacturing Soi Wafer And Thus-Manufactured Soi Wafer |
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| CN101110348A (en) * | 2006-07-19 | 2008-01-23 | 联华电子股份有限公司 | Surface treatment, specification and assembling method for microelectronic element and its storage structure |
| CN101350322A (en) * | 2007-05-04 | 2009-01-21 | 台湾积体电路制造股份有限公司 | Method for forming IC structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110164894A (en) * | 2019-05-28 | 2019-08-23 | 上海华力微电子有限公司 | A kind of bonding method |
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