CN101110348A - Surface treatment, specification and assembling method for microelectronic element and its storage structure - Google Patents
Surface treatment, specification and assembling method for microelectronic element and its storage structure Download PDFInfo
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- CN101110348A CN101110348A CNA2006101059474A CN200610105947A CN101110348A CN 101110348 A CN101110348 A CN 101110348A CN A2006101059474 A CNA2006101059474 A CN A2006101059474A CN 200610105947 A CN200610105947 A CN 200610105947A CN 101110348 A CN101110348 A CN 101110348A
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- chip
- microelectronic element
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Abstract
A storage structure for a micro-electronic component is provided, which comprises a chip with completed back end technique and a polymer layer that is covered on the surface of the chip and can be dissolved in solvent. Because the polymer layer is able to isolate the surface and external environment of the chip, the invention is able to prevent the occurrence of erosion, fading or stratification on the surface of the chip.
Description
Technical field
The present invention relates to a kind of processing, relate in particular to a kind of surface treatment (surface treatment), classification (sort) and assembling (assembling) method and memory structure (storage structure) thereof of microelectronic element at microelectronic element (microelectronic device).
Background technology
Microelectronic element often is subjected to the influence of external environment between the storage life before final assembling.For instance, behind long-time storage microelectronic element, chip (chip) surface of finding microelectronic element has corrosion (corrosion), fade (discolor) or the phenomenon generation of stratification (delaminating), and then causes the chip of final product.
Summary of the invention
The surface treatment method that the purpose of this invention is to provide a kind of microelectronic element is not influenced by extraneous poor environment with the chip surface of protecting microelectronic element, and does not have complicated and expensive technology.
A further object of the present invention provides a kind of sorting technique (wafer sort) of microelectronic element, can prevent that chip surface is contaminated under the situation that does not influence test accuracy (testing accuracy) and probe tip cleaning (cleanliness).
Another purpose of the present invention provides a kind of assemble method of microelectronic element, does not influence the cleaning of keeping chip surface under bonding operation (bonding operation) and the quality.
Another object of the present invention provides a kind of memory structure of microelectronic element, can avoid surface corrosion (corrosion) that chip taken place between the storage life, fade (discolor) or the phenomenon of stratification (delaminating).
The present invention proposes a kind of surface treatment method of microelectronic element, is applicable to finish last part technology (back-end-of-line, chip BEOL).The surface that this method is included in aforementioned chip forms the polymeric layer (solvent dissolvable polymer layer) that one deck dissolves in solvent, with isolated chip surface and the external environment of finishing last part technology.
Surface treatment method according to the described microelectronic element of the first embodiment of the present invention, the above-mentioned material that dissolves in the polymeric layer of solvent comprises hexamethyldisiloxane (hexamethyldisilazane, HMDS), two (dimethylamino) dimethyl silane (bis (dimethylamino) dimethylailane, BDMAS), the dimetylsilyl diethylamine (dimethylsilyldiethylamine, DMSEDA) or other polymer that is fit to.And, the temperature that forms the polymeric layer dissolve in solvent about between 90 ℃～120 ℃ and the time between 30 seconds～90 seconds.
According to the surface treatment method of the described microelectronic element of the first embodiment of the present invention, on be set forth in chip the surface method that forms the polymeric layer dissolve in solvent comprise physical vaporous deposition.
According to the surface treatment method of the described microelectronic element of the first embodiment of the present invention, on be set forth in chip the surface form and to dissolve in before the polymeric layer of solvent, also comprise the jia bombardier rapid (dehydration step) of anhydrating together.
The present invention proposes a kind of sorting technique of microelectronic element in addition, and comprising provides a chip, again chip is carried out above-mentioned surface treatment method, forms one deck watertight composition with the surface in chip, and wherein the material of watertight composition is the polymer that dissolves in solvent.Then, utilize a probe to pass watertight composition, to test.
The present invention reintroduces a kind of assemble method of microelectronic element, and comprising provides a chip and a circuit substrate (circuit substrate) respectively.Then, aforementioned chip is carried out above-mentioned surface treatment method, form one deck watertight composition with the surface in chip, wherein the material of watertight composition is the polymer that dissolves in solvent.Afterwards, before engagement step, remove above-mentioned watertight composition, rejoin chip and circuit substrate.
According to the assemble method of the described microelectronic element of the third embodiment of the present invention, during above-mentioned removal watertight composition, can clean the surface of chip simultaneously.For example, use isopropyl alcohol (isopropyl alcohol, solvent clean IPA) or adding Supersonic with deionized water involves hydrogen peroxide, ammoniacal liquor or diluted hydrofluoric acid (DiluteHF, mode DHF) is washed.
According to the assemble method of the described microelectronic element of the third embodiment of the present invention, the method for above-mentioned removal watertight composition comprises uses strong base solution to clean, use wet-cleaning agent (wet stripper) to clean or clean in the mode that plasma divests.
According to the assemble method of the described microelectronic element of the third embodiment of the present invention, also comprise after the above-mentioned removal watertight composition chip is carried out one brilliant back-grinding step (back grinding step).
According to the described method of various embodiments of the present invention, the method for aforementioned formation watertight composition comprises physical vaporous deposition or other method that is fit to.
According to the described method of various embodiments of the present invention, the material of aforementioned watertight composition comprises hexamethyldisiloxane (HMDS), two (dimethylamino) dimethyl silane (BDMAS), dimetylsilyl diethylamine (DMSEDA) or other polymer that is fit to.
According to the described method of various embodiments of the present invention, also comprise the chip jia bombardier of anhydrating together rapid before aforementioned watertight composition forms.
The present invention proposes a kind of memory structure of microelectronic element again, comprises the chip of finishing last part technology and is covered in the polymeric layer that dissolves in solvent on the surface of chip, with the surface and the external environment of isolated chip.
According to above-mentioned memory structure of the present invention, the material that wherein dissolves in the polymeric layer of solvent comprises hexamethyldisiloxane (HMDS), two (dimethylamino) dimethyl silane (BDMAS), dimetylsilyl diethylamine (DMSEDA) or other polymer that is fit to.In addition, the above-mentioned thickness that dissolves in the polymeric layer of solvent arrives between tens of dusts about the number dust.
The present invention is because just form the polymeric layer that one deck only dissolves in solvent at chip surface after finishing last part technology, therefore chip surface is not influenced by extraneous poor environment can between the storage life, and surface corrosion (corrosion) is arranged, fades (discolor) or the phenomenon of stratification (delaminating) takes place.Moreover the method that forms the above-mentioned polymeric layer that dissolves in solvent not only simply but also need not spend expensive making, and is and compatible in general last part technology (BEOL) and white room facilities (cleanroom facility) and manufacturing board.In addition, the present invention can be applicable to the sorting technique (wafer sort) of microelectronic element, and does not influence test accuracy (testing accuracy) and probe tip cleaning (cleanliness).In addition, the present invention can also be applied in the assemble method of microelectronic element, and does not influence bonding operation (bonding operation) and quality.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A to Figure 1B is the surface treatment flow process profile according to a kind of microelectronic element of the first embodiment of the present invention;
Fig. 2 is the classification step figure according to a kind of microelectronic element of the second embodiment of the present invention;
Fig. 3 is the number of assembling steps figure according to a kind of microelectronic element of the third embodiment of the present invention.
The main element symbol description
10: chip
100: substrate
102,104,110: dielectric layer
106: connector
108: weld pad
120: the polymeric layer that dissolves in solvent
200～220,300～330: step
Embodiment
Figure 1A to Figure 1B is the surface treatment flow process profile according to a kind of microelectronic element of the first embodiment of the present invention.
Please earlier with reference to Figure 1A, the present invention proposes a kind of surface treatment method of microelectronic element, be applicable to the chip 10 of finishing last part technology (BEOL), its chips 10 is made of with weld pad 108 substrate 100, several layers of dielectric layer 102,104 and 110, connector 106.And be exposed at chip 10 surfaces weld pad 108 and outermost dielectric layer 110 arranged.The structure of above chip 10 is a kind of example, but not in order to limit range of application of the present invention.
Then, please refer to Figure 1B, the method for this embodiment is to form the polymeric layer (solvent dissolvable polymer layer) 120 that one deck dissolves in solvent in chip 10 surfaces, and its thickness for example is between tens of dusts at the number dust.And on be set forth in chip 10 the surface method physical vaporous deposition for example that forms the polymeric layer 120 dissolve in solvent.
And the polymeric layer 120 that preferably dissolves in solvent is good tack all to be arranged with metal material (as the weld pad 108 of this figure) and dielectric material (as the dielectric layer 110 of this figure).In present embodiment, the material that dissolves in the polymeric layer 120 of solvent for example is hexamethyldisiloxane (hexamethyldisilazane, HMDS), two (dimethylamino) dimethyl silane (bis (dimethylamino) dimethylailane, BDMAS), the dimetylsilyl diethylamine (dimethyl silyldiethylamine, DMSEDA) or other polymer that is fit to.For instance, the temperature that forms the aforementioned polymeric layer 120 that dissolves in solvent about between 90 ℃～120 ℃ and the time between 30 seconds～90 seconds.In addition, the jia bombardier rapid (dehydration step) of also can anhydrating together before forming the polymeric layer 120 that dissolves in solvent in the surface of chip 10.
After the chip surface covering of finishing last part technology (BEOL) dissolves in the polymeric layer of solvent; can obtain the memory structure of a kind of microelectronic element of the present invention; and because the protection of the polymeric layer that dissolves in solvent is arranged, so microelectronic element can not be subjected to external environmental.
Fig. 2 is the classification step figure according to a kind of microelectronic element of the second embodiment of the present invention.
Please refer to Fig. 2, in step 200, provide a chip.And, can be before step 210, rapid to the said chip jia bombardier of anhydrating together earlier.Then, in step 210, chip is carried out the described surface treatment method of above-mentioned first embodiment, form one deck watertight composition with surface in chip, wherein the material of watertight composition is the polymer that dissolves in solvent, as hexamethyldisiloxane (HMDS), two (dimethylamino) dimethyl silane (BDMAS), dimetylsilyl diethylamine (DMSEDA) or other polymer that is fit to.And the method that forms watertight composition for example is physical vaporous deposition or other method that is fit to.Then, in step 220, utilize a probe to pass watertight composition, to test.
Because it is the watertight composition among second embodiment can not influence the test accuracy that the branch time-like is advanced, and can not pollute detecting probe yet, therefore compatible in the operation of sorting chips test.
Fig. 3 is the number of assembling steps figure according to a kind of microelectronic element of the third embodiment of the present invention.
Please refer to Fig. 3, in step 300, provide a chip and a circuit substrate (circuitsubstrate).Then, can be before step 310 rapid to the chip jia bombardier of anhydrating together earlier; Perhaps directly carry out step 310, aforementioned chip is carried out the described surface treatment method of above-mentioned first embodiment, form one deck watertight composition with surface in chip, wherein the material of watertight composition is the polymer that dissolves in solvent, its material such as hexamethyldisiloxane (HMDS), two (dimethylamino) dimethyl silane (BDMAS), dimetylsilyl diethylamine (DMSEDA) or other polymer that is fit to.And the method for aforementioned formation watertight composition comprises physical vaporous deposition or other method that is fit to.
Afterwards, before engagement step, carry out step 320 earlier, remove watertight composition, its method for example is to adopt as FEOL (front-end-of-line, FEOL) strong base solution cleans, (back-end-of-line, wet-cleaning agent BEOL) (wet stripper) is cleaned or cleaned in the mode that plasma divests as last part technology.In addition, step 320 also can reach the purpose on the surface of cleaning chip simultaneously; For instance, can use isopropyl alcohol (isopropyl alcohol, IPA) solvent clean or add ultrasonic waves and hydrogen peroxide, ammoniacal liquor or diluted hydrofluoric acid with deionized water (Dilute HF, DHF) (for instance: the concentration of diluted hydrofluoric acid＜＜100: mode 1) is washed.Also can carry out one brilliant back-grinding step (back grinding step) to chip according to required afterwards, next step 330 again continues.At last, in step 330, engage said chip and circuit substrate.
In sum, characteristics of the present invention are just to form the polymeric layer that one deck only dissolves in solvent at chip surface after finishing last part technology, therefore chip surface is not influenced by extraneous poor environment can between the storage life, and then avoids chip surface generation burn into to fade or stratified phenomenon.Moreover the method that forms the above-mentioned polymeric layer that dissolves in solvent is simple, low-cost, and compatible in general last part technology and white room facilities and make board.In addition, the present invention can be applicable to the sorting technique of microelectronic element, and does not influence test accuracy and probe tip cleaning.In addition, the present invention can also be applied in the assemble method of microelectronic element, and does not influence bonding operation and quality.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (20)
1. the surface treatment method of a microelectronic element is applicable to the chip of finishing last part technology, comprising:
Surface in this chip forms the polymeric layer that dissolves in solvent, with isolated this chip surface and the external environment of finishing last part technology.
2. the surface treatment method of microelectronic element as claimed in claim 1, wherein this material that dissolves in the polymeric layer of solvent comprises hexamethyldisiloxane, two (dimethylamino) dimethyl silane or dimetylsilyl diethylamine.
3. the surface treatment method of microelectronic element as claimed in claim 2, the temperature that wherein forms this polymeric layer that dissolves in solvent between 90 ℃～120 ℃ and the time between 30 seconds～90 seconds.
4. the surface treatment method of microelectronic element as claimed in claim 1 wherein forms this method that dissolves in the polymeric layer of solvent and comprises physical vaporous deposition in the surface of this chip.
5. the surface treatment method of microelectronic element as claimed in claim 1, wherein form this polymeric layer that dissolves in solvent in the surface of this chip before, comprise that also the jia bombardier of anhydrating is rapid.
6. the sorting technique of a microelectronic element comprises:
Chip is provided;
This chip is carried out the described surface treatment method of claim 1, form watertight composition with the surface in this chip, wherein the material of this watertight composition is the polymer that dissolves in solvent; And
Utilize probe to pass this watertight composition, to test.
7. the sorting technique of microelectronic element as claimed in claim 6, the method that wherein forms this watertight composition comprises physical vaporous deposition.
8. the sorting technique of microelectronic element as claimed in claim 6, wherein the material of this watertight composition comprises hexamethyldisiloxane, two (dimethylamino) dimethyl silane or dimetylsilyl diethylamine.
9. the sorting technique of microelectronic element as claimed in claim 6, wherein form also comprise before this watertight composition this chip jia bombardier of anhydrating rapid.
10. the assemble method of a microelectronic element comprises:
Chip and circuit substrate are provided;
This chip is carried out the described surface treatment method of claim 1, form watertight composition with the surface in this chip, wherein the material of this watertight composition is the polymer that dissolves in solvent;
Before engagement step, remove this watertight composition; And
Engage this chip and this circuit substrate.
11. the assemble method of microelectronic element as claimed in claim 10, the method that wherein forms this watertight composition comprises physical vaporous deposition.
12. the assemble method of microelectronic element as claimed in claim 10 when wherein removing this watertight composition, cleans the surface of this chip simultaneously.
13. the assemble method of microelectronic element as claimed in claim 12, the method for wherein removing this watertight composition comprises: use the solvent clean of isopropyl alcohol or adding the mode that Supersonic involves hydrogen peroxide, ammoniacal liquor or diluted hydrofluoric acid with deionized water washs.
14. comprising, the assemble method of microelectronic element as claimed in claim 10, the method for wherein removing this watertight composition use strong base solution to clean, use the wet-cleaning agent to clean or clean in the mode that plasma divests.
15. the assemble method of microelectronic element as claimed in claim 10, wherein the material of this watertight composition comprises hexamethyldisiloxane, two (dimethylamino) dimethyl silane or dimetylsilyl diethylamine.
16. the assemble method of microelectronic element as claimed in claim 10 is wherein removed and is also comprised after this watertight composition this chip is carried out brilliant back-grinding step.
17. the assemble method of microelectronic element as claimed in claim 10, wherein form also comprise before this watertight composition this chip jia bombardier of anhydrating rapid.
18. the memory structure of a microelectronic element comprises:
Chip, this chip has been finished last part technology; And
Dissolve in the polymeric layer of solvent, be covered in the surface of this chip, with the surface and the external environment of isolated this chip.
19. the memory structure of microelectronic element as claimed in claim 18, wherein this material that dissolves in the polymeric layer of solvent comprises hexamethyldisiloxane, two (dimethylamino) dimethyl silane or dimetylsilyl diethylamine.
20. the memory structure of microelectronic element as claimed in claim 18, wherein this thickness that dissolves in the polymeric layer of solvent arrives between tens of dusts at the number dust.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101059474A CN101110348A (en) | 2006-07-19 | 2006-07-19 | Surface treatment, specification and assembling method for microelectronic element and its storage structure |
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| CNA2006101059474A CN101110348A (en) | 2006-07-19 | 2006-07-19 | Surface treatment, specification and assembling method for microelectronic element and its storage structure |
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| CNA2006101059474A Pending CN101110348A (en) | 2006-07-19 | 2006-07-19 | Surface treatment, specification and assembling method for microelectronic element and its storage structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448645A (en) * | 2014-07-07 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Bonding pad processing method |
| CN106158591A (en) * | 2016-08-08 | 2016-11-23 | 凡音环保科技（苏州）有限公司 | A kind of surface treatment method of microelectronic element |
| CN107768325A (en) * | 2017-09-04 | 2018-03-06 | 北京时代民芯科技有限公司 | A kind of flip chip bonding packaging structure and preparation method thereof |
| CN110690121A (en) * | 2019-10-11 | 2020-01-14 | 武汉新芯集成电路制造有限公司 | Method for protecting bonding pad and method for manufacturing semiconductor device |
-
2006
- 2006-07-19 CN CNA2006101059474A patent/CN101110348A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448645A (en) * | 2014-07-07 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Bonding pad processing method |
| CN106158591A (en) * | 2016-08-08 | 2016-11-23 | 凡音环保科技（苏州）有限公司 | A kind of surface treatment method of microelectronic element |
| CN107768325A (en) * | 2017-09-04 | 2018-03-06 | 北京时代民芯科技有限公司 | A kind of flip chip bonding packaging structure and preparation method thereof |
| CN107768325B (en) * | 2017-09-04 | 2019-10-25 | 北京时代民芯科技有限公司 | A kind of flip chip bonding packaging structure and preparation method thereof |
| CN110690121A (en) * | 2019-10-11 | 2020-01-14 | 武汉新芯集成电路制造有限公司 | Method for protecting bonding pad and method for manufacturing semiconductor device |
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