CN102024718A - Method for making aluminum soldering disc - Google Patents
Method for making aluminum soldering disc Download PDFInfo
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- CN102024718A CN102024718A CN2009101954073A CN200910195407A CN102024718A CN 102024718 A CN102024718 A CN 102024718A CN 2009101954073 A CN2009101954073 A CN 2009101954073A CN 200910195407 A CN200910195407 A CN 200910195407A CN 102024718 A CN102024718 A CN 102024718A
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- Prior art keywords
- aluminum pad
- aluminum
- film
- plasma treatment
- disc
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Abstract
The invention provides a method for making an aluminum soldering disc. The method comprises the following steps of: forming an aluminum film layer on the surface of a wafer by using a PVD (Physical Vapor Deposition) process; forming an aluminum disc by using a photoetching process and an etching process; and then flushing the surface of the aluminum disc with a cleaning reagent containing sulfuric acid (H2SO4); carrying out plasma treatment on the surface of the aluminum disc with oxygen (O2) to form an aluminum oxide (Al2O3) film on the surface of the aluminum disc; and performing annealing treatment. By using the method, a crystal shaped defect on the surface of the aluminum soldering disc can be avoided.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of manufacture method of aluminum pad.
Background technology
Extensive use along with electronic equipment, semi-conductive manufacturing process has obtained development at full speed, in semi-conductive manufacturing process, the manufacture method that relates to aluminum pad, aluminum pad is wafer and the extraneous interconnect interface that is connected, and can make wafer be connected with the extraneous metal that forms by the keyed jointing line on the aluminum pad surface.In the prior art, the manufacture method of aluminum pad comprises: adopt physical vapor deposition (PVD) technology to form aluminum film layer at whole crystal column surface, adopt photoetching process and etch process to form aluminum pad, then aluminum pad is carried out wet-cleaned, carry out annealing in process at last, and the wafer that will have an aluminum pad is deposited in the factory for follow-up use.Wherein, when aluminum pad is carried out wet-cleaned, adopt the cleaning reagent flushing aluminum pad surface of hydrofluoric acid containing (HF) usually, in order to remove because etching and at the residual organic matter on aluminum pad surface, the concentration of HF is generally about 85/1000000ths.
Yet in actual applications, after employing PVD technology formed aluminum film layer, because metallic aluminium is very easily oxidized in air, this will form the general aluminium oxide (Al of variable thickness, skewness, density of 20 dust to 35 dusts on the surface of aluminum pad
2O
3) film, when the cleaning reagent that contains HF when employing carries out wet-cleaned to aluminum pad, contained water meeting and Al among HF and the HF
2O
3Film generation chemical reaction and generate aluminum fluoride (AlF
3) and aluminium hydroxide (Al (OH)
3), and the air humidity of factory is generally greater than 50%, airborne steam and Al
2O
3Film generation chemical reaction also can generate Al (OH)
3, AlF
3And Al (OH)
3The capital causes the surface of aluminum pad to form crystal shaped defective, and these defectives can influence the apparent and follow-up keyed jointing line of physics of aluminum pad.
Summary of the invention
In view of this, the invention provides a kind of manufacture method of aluminum pad, form crystal shaped defective with the surface of avoiding aluminum pad.
For achieving the above object, technical scheme of the present invention specifically is achieved in that
A kind of manufacture method of aluminum pad adopts physical vapour deposition (PVD) PVD technology to form aluminum film layer at crystal column surface, and after adopting photoetching process and etch process to form aluminum pad, it is characterized in that this method comprises:
Employing contains sulfuric acid H
2SO
4Cleaning reagent flushing aluminum pad surface;
Adopt oxygen O
2Plasma treatment is carried out on the aluminum pad surface, form aluminium oxide Al on the aluminum pad surface
2O
3Film;
Carry out annealing in process.
This method further comprises: the wafer that will have aluminum pad is stored in relative air humidity less than in 48% the environment.
Described H
2SO
4Volume ratio be 3% to 10%.
Described Al
2O
3The thickness of film is 40 dust to 70 dusts.
The temperature of described plasma treatment is 230 ℃ to 300 ℃, and the time of described plasma treatment is 30 seconds to 120 seconds.
As seen from the above technical solutions, adopt PVD technology to form aluminum film layer, and after adopting photoetching process and etch process to form aluminum pad, adopt and contain H
2SO
4Cleaning reagent flushing aluminum pad surface, adopt O then
2Plasma treatment is carried out on the aluminum pad surface, form Al on the aluminum pad surface
2O
3Therefore film, so just can avoid the aluminum pad surface to form crystal shaped defective fully.
Description of drawings
Fig. 1 is the flow chart of the manufacture method of aluminum pad provided by the present invention.
Embodiment
For making purpose of the present invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, the present invention is described in more detail.
Fig. 1 is the flow chart of the manufacture method of aluminum pad provided by the present invention, and as shown in Figure 1, this method may further comprise the steps:
The content of this step is a prior art, does not repeat them here.
In this step, employing contains H
2SO
4Cleaning reagent replaced containing in the prior art cleaning reagent of HF, thereby can avoid AlF
3Generation, wherein, H
2SO
4Volume ratio be preferably 3% to 10% because with H
2SO
4Volume ratio be controlled in the described preferred range H
2SO
4Only with aluminum pad surface institute residual organic matter generation chemical reaction, and not with aluminum pad generation chemical reaction, more can not cause corrosion to aluminum pad.
Wherein, the method for plasma treatment is the content of prior art.
After step 102 finishes, H
2SO
4Aluminum pad surface institute residual organic matter can be got rid of, thereby be come out in the surface of aluminum pad, in this step, make O
2With isoionic form and aluminum pad surface physics and chemical reaction take place, finally form the Al of 40 dust to 70 dusts on the aluminum pad surface
2O
3Film, this just is equivalent to form Al on the aluminum pad surface
2O
3Passivation layer, Al
2O
3Passivation layer can be used as the isolated protective layer of aluminum pad.
Be evenly distributed in order to form on the surface of aluminum pad, fine and close Al
2O
3Film, the temperature of plasma treatment are preferably 230 ℃ to 300 ℃, and the time of plasma treatment is preferably 30 seconds to 120 seconds.
Need to prove,, can avoid AlF owing to adopted step 102
3Generation, but can cause aluminum pad the Al (OH) of crystal shaped defective to occur equally
3Also do not avoided fully, therefore, in this step, adopted O
2Plasma treatment is carried out on surface to aluminum pad, on the one hand, can form the Al of the densification of 40 dust to 70 dusts on the aluminum cushion layer surface
2O
3Film, the Al of the densification of 40 dust to 70 dusts
2O
3Film can not influence the keyed jointing and the electrical property of aluminum pad, and Al
2O
3Passivation layer can be used as the isolated protective layer of aluminum pad; On the other hand, plasma treatment is carried out under hot environment, and this just makes Al
2O
3Film can't with water generation chemical reaction, thereby avoided Al (OH)
3Generation.
The content of this step is same as the prior art, does not repeat them here.
Owing to adopted step 102 and step 103, then can avoid in the process of wet-cleaned, forming AlF
3And Al (OH)
3Thereby, can avoid the aluminum pad surface to form crystal shaped defective, still, in follow-up flow process, if wafer is placed the bigger environment of humidity ratio, the Al on aluminum pad surface
2O
3Thereby film also might form Al (OH) with airborne steam generation chemical reaction
3, therefore, when the wafer that has aluminum pad is stored, also should reduce the air humidity in the storage environment as far as possible.
Described relative air humidity is meant: when 22 ℃ and a standard atmospheric pressure, and the ratio of the quality of the water that the quality of the water that contains in 1 kg air and 1 kg air contain under saturation condition.
Need to prove, step 105 is inessential technical characterictic, after step 104 finishes, can directly carry out the keyed jointing line to aluminum pad, thereby do not need the wafer that has aluminum pad is stored, after step 104 finishes, also can store, for follow-up keyed jointing line to the wafer that has aluminum pad.
So far, this flow process finishes, and can enter follow-up technological process.
As seen, above-mentioned flow process at first adopts and contains H when aluminum pad is carried out wet-cleaned
2SO
4Cleaning reagent wash the aluminum pad surface, adopt O then
2Plasma treatment is carried out on the aluminum pad surface, form Al on the aluminum pad surface
2O
3Film, and after annealing in process, the wafer that will have aluminum pad is stored in air humidity smaller or equal in 48% the environment, therefore, so just can avoid the aluminum pad surface to form crystal shaped defective fully.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of being done, be equal to and replace and improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. the manufacture method of an aluminum pad adopts physical vapour deposition (PVD) PVD technology to form aluminum film layer at crystal column surface, and after adopting photoetching process and etch process to form aluminum pad, it is characterized in that this method comprises:
Employing contains sulfuric acid H
2SO
4Cleaning reagent flushing aluminum pad surface;
Adopt oxygen O
2Plasma treatment is carried out on the aluminum pad surface, form aluminium oxide Al on the aluminum pad surface
2O
3Film;
Carry out annealing in process.
2. method according to claim 1 is characterized in that, this method further comprises: the wafer that will have aluminum pad is stored in relative air humidity less than in 48% the environment.
3. method according to claim 1 is characterized in that, described H
2SO
4Volume ratio be 3% to 10%.
4. method according to claim 1 is characterized in that, described Al
2O
3The thickness of film is 40 dust to 70 dusts.
5. method according to claim 4 is characterized in that, the temperature of described plasma treatment is 230 ℃ to 300 ℃, and the time of described plasma treatment is 30 seconds to 120 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101954073A CN102024718A (en) | 2009-09-09 | 2009-09-09 | Method for making aluminum soldering disc |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101954073A CN102024718A (en) | 2009-09-09 | 2009-09-09 | Method for making aluminum soldering disc |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102024718A true CN102024718A (en) | 2011-04-20 |
Family
ID=43865861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101954073A Pending CN102024718A (en) | 2009-09-09 | 2009-09-09 | Method for making aluminum soldering disc |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102024718A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339770A (en) * | 2011-09-07 | 2012-02-01 | 中国航天科技集团公司第九研究院第七七一研究所 | Process for improving shear strength between lead-tin bump and aluminum pad on wafer |
| CN104538323A (en) * | 2014-12-29 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | Pin line manufacturing method |
| CN105355566A (en) * | 2014-08-21 | 2016-02-24 | 中芯国际集成电路制造(上海)有限公司 | Surface treatment method of bonding pad and manufacturing method of bonding pad |
| CN105990162A (en) * | 2015-01-28 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Formation method of metal pad |
| CN106298556A (en) * | 2015-05-19 | 2017-01-04 | 北大方正集团有限公司 | The manufacture method of a kind of chip pressure welding block and chip |
| CN107123600A (en) * | 2017-05-19 | 2017-09-01 | 武汉新芯集成电路制造有限公司 | It is a kind of to improve the lithographic method of wafer surface defects |
| CN107706093A (en) * | 2017-11-08 | 2018-02-16 | 上海华力微电子有限公司 | A kind of manufacture method of aluminium pad |
| CN108847410A (en) * | 2018-06-21 | 2018-11-20 | 武汉新芯集成电路制造有限公司 | Improve the method for bond pad surface defect and the manufacturing method of pad |
-
2009
- 2009-09-09 CN CN2009101954073A patent/CN102024718A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339770A (en) * | 2011-09-07 | 2012-02-01 | 中国航天科技集团公司第九研究院第七七一研究所 | Process for improving shear strength between lead-tin bump and aluminum pad on wafer |
| CN102339770B (en) * | 2011-09-07 | 2012-12-19 | 中国航天科技集团公司第九研究院第七七一研究所 | Process for improving shear strength between lead-tin bump and aluminum pad on wafer |
| CN105355566A (en) * | 2014-08-21 | 2016-02-24 | 中芯国际集成电路制造(上海)有限公司 | Surface treatment method of bonding pad and manufacturing method of bonding pad |
| CN104538323A (en) * | 2014-12-29 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | Pin line manufacturing method |
| CN105990162A (en) * | 2015-01-28 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Formation method of metal pad |
| CN105990162B (en) * | 2015-01-28 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | The forming method of metal gasket |
| CN106298556A (en) * | 2015-05-19 | 2017-01-04 | 北大方正集团有限公司 | The manufacture method of a kind of chip pressure welding block and chip |
| CN107123600A (en) * | 2017-05-19 | 2017-09-01 | 武汉新芯集成电路制造有限公司 | It is a kind of to improve the lithographic method of wafer surface defects |
| CN107706093A (en) * | 2017-11-08 | 2018-02-16 | 上海华力微电子有限公司 | A kind of manufacture method of aluminium pad |
| CN108847410A (en) * | 2018-06-21 | 2018-11-20 | 武汉新芯集成电路制造有限公司 | Improve the method for bond pad surface defect and the manufacturing method of pad |
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Application publication date: 20110420 |