CN105437054A - Chemical mechanical polishing method and device - Google Patents
Chemical mechanical polishing method and device Download PDFInfo
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- CN105437054A CN105437054A CN201410443217.XA CN201410443217A CN105437054A CN 105437054 A CN105437054 A CN 105437054A CN 201410443217 A CN201410443217 A CN 201410443217A CN 105437054 A CN105437054 A CN 105437054A
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Abstract
The invention provides a chemical mechanical polishing method and device. The chemical mechanical polishing method includes the steps that a polishing pad and an adjuster are provided; polishing crystals are provided, and magnetic material layers are mounted on the surfaces of the polishing crystals; the polishing crystals are put in the adjuster; and the adjuster is provided with a magnetic sucker used for sucking and collecting the polishing crystals dropping from the adjuster. The chemical mechanical polishing device comprises the polishing pad, the adjuster and the polishing crystals, wherein the surfaces of the polishing crystals are provided with the magnetic material layers, and the polishing crystals are embedded into the adjuster; the magnetic sucker is mounted on the adjuster and used for sucking and collecting the polishing crystals dropping from the adjuster. The chemical mechanical polishing method and device have the beneficial effects that the magnetic sucker can timely suck up the dropped polishing crystals with the magnetic material layers from the polishing pad, so that a to-be-polished wafer is prevented from being scratched.
Description
Technical field
The present invention relates to field of semiconductor manufacture, be specifically related to a kind of chemical and mechanical grinding method and chemical mechanical polishing device.
Background technology
Cmp (ChemicalMechanicalPolishing, CMP), as one technique requisite in semiconductor machining, is used to the various material layer on planarize in wafer machining process.Chemical mechanical milling method utilizes mechanical polishing principle, coordinates the planarization that the chemical assistant in lapping liquid is polished the yo-yo profile of chip surface height.Coordinate various state modulator, the flatness that cmp can make polished surface reach higher.
With reference to the structural representation that figure 1 is chemical mechanical polishing device in prior art, comprise: grinding plate 5, grinding head 1 (head) and adjuster 3 (padconditioner), grinding plate 5 surface has grinding pad (not shown), and the flowing of grinding pad surface has lapping liquid (slurry); Wafer 2 (wafer) is adsorbed on the bottom of described grinding head 1, and grinding plate 5 rotates according to certain orientation, and described grinding head 1 also rotates according to certain orientation simultaneously, and grinding pad and lapping liquid carry out cmp to described wafer 2.
The bottom of described adjuster 3 is provided with the grinding layer 4 with grinding crystal (abrasivecrystal), in process of lapping, the one side of adjuster 3 can make lapping liquid be more evenly distributed on grinding pad, on the other hand, abrasive grains in lapping liquid can be smashed by the grinding layer 4 with grinding crystal further, refinement, abrasive grains is distributed more even.
But existing chemical mechanical polishing device still can not well grind wafer, therefore, how to promote the grinding effect of cmp further, become the technical problem that those skilled in the art are urgently to be resolved hurrily.
Summary of the invention
The problem that the present invention solves is by providing a kind of chemical and mechanical grinding method and chemical mechanical polishing device, to promote the grinding effect of cmp.
For solving the problem, the invention provides a kind of chemical and mechanical grinding method, comprising:
The adjuster one grinding pad being provided and being placed in above described grinding pad;
Some grinding crystal are provided;
On at least part of surface of described grinding crystal, magnetic material layer is set;
Be placed in by the grinding crystal being provided with magnetic material layer in the described adjuster one side relative with grinding pad, a part for described grinding crystal is embedded in described adjuster, and another part exposes described adjuster;
Described adjuster arranges a magnetic absorption dish;
Carry out cmp, in chemical mechanical planarization process, magnetic absorption dish adsorbs described grinding crystal.
Optionally, described grinding crystal is diamond.
Optionally, the average diameter of described grinding crystal is in 30 ~ 40 micrometer ranges.
Optionally, cross section is provided to be pentagonal grinding crystal.
Optionally, the step arranging magnetic material layer at grinding plane of crystal comprises: at described grinding crystal all surface coated magnetic material layer;
After the grinding crystal being provided with magnetic material layer is placed in the step of adjuster, described chemical and mechanical grinding method also comprises: the magnetic material layer removing the grinding plane of crystal exposed from adjuster.
Optionally, the step arranging magnetic material layer at grinding plane of crystal comprises: be coated with described magnetic material layer at described grinding plane of crystal.
Optionally, described magnetic material layer is cobalt layers, nickel dam or cobalt-nickel alloy layer.
Optionally, the thickness of described magnetic material layer is in the scope of 5 ~ 10 microns.
In addition, the present invention also provides a kind of chemical mechanical polishing device, comprising:
Grinding pad;
Be placed in the adjuster above described grinding pad;
Grinding crystal, at least part of surface coverage magnetic material layer of described grinding crystal, described grinding crystal is embedded in the described adjuster one side relative with grinding pad, and a part for grinding crystal is embedded in described adjuster, and another part exposes described adjuster;
Magnetic absorption dish, is located on described adjuster, for the grinding crystal that absorptive collection drops from adjuster.
Optionally, described grinding crystal is all coated with magnetic material layer except the part exposed from adjuster.
Optionally, described magnetic material layer is cobalt layers, nickel dam or cobalt-nickel alloy layer.
Optionally, the thickness of described magnetic material layer is in the scope of 5 ~ 10 microns.
Optionally, described grinding crystal is diamond.
Optionally, the average diameter of described grinding crystal is in 30 ~ 40 micrometer ranges.
Compared with prior art, technical scheme of the present invention has the following advantages:
By arranging the grinding crystal with magnetic material layer, and a magnetic absorption dish is set on adjuster, in chemical mechanical planarization process, the probability that the grinding crystal that magnetic absorption dish is conducive to reducing to have magnetic material layer drops from adjuster; Even if grinding crystal drops on grinding pad, the grinding crystal that these can drop by magnetic absorption dish timely, from absorptive collection grinding pad, can avoid these grinding crystal dropped to cause scuffing to wafer to be ground like this.
Further, first at whole grinding plane of crystal coated magnetic material layer, grinding crystal is placed in after on adjuster, pre-grinding is carried out to the grinding crystal from described adjuster exposed portion, to remove the magnetic material layer on grinding surface, crystal exposed portion, to avoid magnetic material layer to fall on grinding pad as far as possible, and then the magnetic material layer reducing to drop is on the impact of process of lapping.
Accompanying drawing explanation
Fig. 1 is the structural representation of chemical mechanical polishing device in prior art;
Fig. 2 to Fig. 8 is the structural representation of each step in chemical and mechanical grinding method one embodiment of the present invention.
Detailed description of the invention
Existing chemical mechanical polishing device still can not grind wafer well, reason is on the one hand, with reference to figure 1, grinding crystal in grinding layer 4 is under pressure constantly and frictional force in process of lapping, thus may come off and drop on grinding plate 5 after some time of use, and then easily scuffing be caused to wafer 2.Existing adjuster 3 is difficult to accomplish to ensure that grinding crystal does not drop, the grinding crystal dropped is difficult to clean out from grinding pad, grinding crystal can be mingled in be had in the lapping liquid of abrasive grains, because the hardness of grinding crystal is larger, be very easy to the surface scratching wafer to be ground, thus affect the grinding effect of cmp.
For this reason, the invention provides a kind of chemical and mechanical grinding method, comprising: an adjuster grinding pad being provided and being placed in above described grinding pad; Some grinding crystal are provided; On at least part of surface of described grinding crystal, magnetic material layer is set; Be placed in by the grinding crystal being provided with magnetic material layer in the described adjuster one side relative with grinding pad, a part for described grinding crystal is embedded in described adjuster, and another part exposes described adjuster; Described adjuster arranges a magnetic absorption dish; Carry out cmp, in chemical mechanical planarization process, magnetic absorption dish adsorbs described grinding crystal.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
First, there is provided a grinding pad, and be placed in the adjuster above described grinding pad, described adjuster is for making lapping liquid be more evenly distributed on grinding pad when carrying out cmp, and the abrasive grains in lapping liquid is smashed further, refinement, make abrasive grains distribute more even.
Some grinding crystal are provided; With reference to the structural representation that figure 2 is the grinding crystal 70 in the present invention, in the present embodiment, described grinding crystal 70 for cross section be pentagonal grinding crystal, wherein, face 73 for when follow-up grinding crystal 70 embeds adjuster as the face contacted with adjuster, face 71 form tip be used for abrasive action.
But this structure is only an example of the present embodiment, the present invention is to the shape of described grinding crystal 70 and be not construed as limiting, and described grinding crystal 70 can be other any shapes.
In the present embodiment, described grinding crystal 70 is diamond (diamond).The hardness of diamond itself is very high, is suitable for the abrasive grains of polishing in refinement lapping liquid.But the present invention is not construed as limiting this, the crystal that other hardness are larger equally can be used as the material of described grinding crystal, and the present invention is not construed as limiting this.
In the present embodiment, the average diameter of described grinding crystal 70 is in 30 ~ 40 micrometer ranges.The less abrasive grains being conducive to polishing in refinement lapping liquid of average diameter of grinding crystal.But this is only an example, in practical operation, the average diameter of described grinding crystal 70 should be selected according to actual conditions, and the present invention is not limited in any way this.
Continue with reference to figure 3, magnetic material layer 72 is set at least part of surface of described grinding crystal 70.Described magnetic material layer 72 can after follow-up arrangement on the controller, s' adsorb by magnetic absorption dish, the probability that grinding crystal 70 drops can be reduced on the one hand, on the other hand, even if described grinding crystal 70 drops on grinding pad in process of lapping, also can be picked up by magnetic absorption dish in time, and then wafer to be ground can not be scratched.
In the present embodiment, can adopt the mode of coating that magnetic material layer 72 is set on described grinding crystal 70 surface.
Particularly, described grinding crystal 70 can be passed through to be immersed in the magnetic metal of gel, to reach the object at the surperficial magnetic materials for painting and coating layer 72 of grinding crystal 70.
It should be noted that, above method is only an example of the present embodiment, the present invention is intended to arrange magnetic material layer 72 on grinding crystal 70 surface, for specifically how arranging described magnetic material layer 72 be not construed as limiting, described magnetic material layer 72 can also be set by alternate manner in other embodiments of the invention, such as, with brush, magnetic material layer 72 is coated in grinding crystal 70 surface.
In the present embodiment, the coated whole grinding crystal 70 of described magnetic material layer 72, because the individual size of grinding crystal 70 is less, forms magnetic material layer 72 relative to fast fairly simple on whole grinding crystal 70 surface.
Due to the present invention be intended to grinding crystal 70 surface formed magnetic material layer 72 so that adsorb by magnetic absorption dish, the present invention is not construed as limiting so must all form magnetic material layer 72 at all surface of grinding crystal 70 to whether, in other embodiments of the invention, described magnetic material layer 72 also only can be formed at the part surface of grinding crystal 70.
Further, in the present embodiment, described magnetic material layer 72 can be the magnetic material layer of the alloy of cobalt, nickel or cobalt nickel metal, the less pollution of these metal pairs wafer to be ground.But the present invention is to this and be not construed as limiting.
Further, in order to make described magnetic material layer 72 enough thick, there is enough magnetic can be adsorbed by described magnetic absorption dish, being unlikely to again blocked up impact grinding crystal 70 and embedding adjuster 100, in the present embodiment, the thickness of described magnetic material layer 72 is in the scope of 5 ~ 10 microns.
With reference to figure 4, it is the structural representation of adjuster in the present embodiment 100.Described adjuster is placed in above described grinding pad (not shown), the described grinding crystal 70 being provided with magnetic material layer 72 is arranged at (being one side down in the present embodiment) in adjuster 100 one side relative with grinding pad, a part for described grinding crystal 70 is embedded in described adjuster 100, and another part exposes described adjuster 100.
Specifically, in the present embodiment, described adjuster 100 comprises adjusting head (conditionerhead) 110, described adjusting head 110 is used for arranging grinding crystal 70 towards the one side of grinding pad, and another side connects the miscellaneous part (such as some connecting rods etc.) of chemical mechanical polishing device.Specifically; described adjusting head 110 is provided with the damascene layer (settingmetal) 130 for inlaying described grinding crystal 70 towards the one side of grinding pad, and the surface of described damascene layer 130 is also provided with the coating 150 (coating) that protection damascene layer 130 is not corroded.
But it should be noted that, above-mentioned adjuster 100 structure is only an example of the present embodiment, the present invention is to this and be not construed as limiting.
Due to the coated whole grinding crystal 70 (with reference to figure 3 and Fig. 4) of described magnetic material layer 72 in the present embodiment, so after described grinding crystal 70 is embedded described adjuster 100, further comprising the steps of:
Remove the magnetic material layer 72 from grinding crystal 70 surface of adjuster 100 exposed portion.With reference to figure 5 and Fig. 6, Fig. 5 is the post regulator 100 of the magnetic material layer 72 removing this part and the structural representation of grinding crystal 70, Fig. 6 is the structural representation of the grinding crystal 70 removed after part magnetic material layer 72, from Fig. 5 and Fig. 6, remove the grinding crystal 70 after the magnetic material layer 72 of this part and the face 71 of its abrasive action is exposed.
Due to abrasive action the grinding crystal 70 from adjuster 100 exposed portion, the magnetic material layer 72 removing this part surface in advance can avoid magnetic material layer 72 to fall on grinding pad, and then reduces the impact on process of lapping.
In the present embodiment, grinding crystal 70 can be made on grinding pad to carry out pre-grinding, and then remove the magnetic material layer 72 of this part.Further, old grinding pad can be adopted to carry out described pre-grinding, and then can cost be saved.
Chemical and mechanical grinding method of the present invention is also included on described adjuster 100 and arranges a magnetic absorption dish, for the grinding crystal 70 that absorptive collection drops from adjuster.With reference to the schematic diagram that figure 7 and Fig. 8, Fig. 7 are described adjuster 100 when real work, Fig. 8 is the top view of whole mechanical lapping equipment.
Described grinding pad 200 is provided with lapping liquid pipeline 210, and lapping liquid 220 flows on grinding pad 200; Grinding head 300 drives wafer (not shown) to be ground to grind on described grinding pad 200, simultaneously, adjuster 100 moves around on described grinding pad 200 surface under mechanical arm 191 drives, for making the lapping liquid on grinding pad 200 surface be uniformly distributed, and the abrasive grains in lapping liquid is smashed, refinement.
Described magnetic absorption dish 180 is located on described adjuster 100, for adsorbing the grinding crystal 70 dropped on grinding pad 200 from adjuster 100.Because grinding crystal 70 surface is provided with magnetic material layer 72, grinding crystal 70 can be attracted on magnetic absorption dish 180 after the drops, and then avoids grinding crystal 70 and stay on grinding pad 200 and scratch wafer to be ground.
Concrete, described magnetic absorption dish 180 can be welding or be bonded on described adjuster 100, and the present invention is to this and be not construed as limiting.
In addition, the present invention also provides a kind of chemical mechanical polishing device.Composition graphs 7 and Fig. 8, show the schematic diagram of chemical mechanical polishing device one embodiment of the present invention, described chemical mechanical polishing device comprises:
Grinding pad 200;
Be placed in the adjuster 100 above described grinding pad 200;
Grinding crystal 70, in the present embodiment, described grinding crystal 70 is diamond (diamond).The hardness of diamond itself is very high, is suitable for the abrasive grains of polishing in refinement lapping liquid.But the present invention is not construed as limiting this, the crystal that other hardness are larger equally can be used as the material of described grinding crystal 70.
In the present embodiment, the average diameter of described grinding crystal is in 30 ~ 40 micrometer ranges.The less abrasive grains being conducive to polishing in refinement lapping liquid of average diameter of grinding crystal 70.But this is only an example, in practical operation, the average diameter of described grinding crystal 70 should be selected according to actual conditions, and the present invention is not limited in any way this.
At least part of surface coverage magnetic material layer of described grinding crystal 70, described magnetic material layer can magnetic material layer 72 in reference diagram 5.Described grinding crystal 70 is embedded in described adjuster 100 one side relative with grinding pad 200, and a part for grinding crystal 70 is embedded in described adjuster 100, and another part exposes described adjuster 100.
In the present embodiment, described magnetic material layer is only positioned at the surface that described grinding crystal embeds described adjuster part, that is, described grinding crystal 70 is all coated with magnetic material layer except the part exposed from adjuster 100 (face 71 with reference to grinding crystal 70 in figure 5).The part of such grinding crystal 70 abrasive actions, the part namely exposing adjuster 100 does not have magnetic material layer to cover, and when grinding, magnetic material can not be fallen on grinding pad 200, and then decreases the impact treating grinding crystal wafer.
In the present embodiment, described magnetic material layer is the magnetic cobalt of tool, nickel or cobalt-nickel alloy layer.The less pollution of these metal pairs wafer to be ground.But the present invention is to this and be not construed as limiting.
In the present embodiment, in order to make described magnetic material layer 72 enough thick, there is enough magnetic can be adsorbed by described magnetic absorption dish, be unlikely to again blocked up impact grinding crystal 70 and embed adjuster 100, in the present embodiment, the thickness of described magnetic material layer 72 is in the scope of 5 ~ 10 microns.
Magnetic absorption dish, is located on described adjuster, for the grinding crystal that absorptive collection drops from adjuster.
Described in the absorption of magnetic absorption dish, there is the grinding crystal of magnetic material layer, and then can reduce to grind the probability that crystal drops from adjuster; Even if grinding crystal drops on grinding pad, the grinding crystal that these can drop by magnetic absorption dish timely, from grinding pad absorption, can not cause scuffing to wafer to be ground like this.
It should be noted that in addition, the chemical mechanical polishing device of the present embodiment can be, but not limited to for above-mentioned chemical and mechanical grinding method.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (14)
1. a chemical and mechanical grinding method, is characterized in that, comprising:
The adjuster one grinding pad being provided and being placed in above described grinding pad;
Some grinding crystal are provided;
On at least part of surface of described grinding crystal, magnetic material layer is set;
Be placed in by the grinding crystal being provided with magnetic material layer in the described adjuster one side relative with grinding pad, a part for described grinding crystal is embedded in described adjuster, and another part exposes described adjuster;
Described adjuster arranges a magnetic absorption dish;
Carry out cmp, in chemical mechanical planarization process, magnetic absorption dish adsorbs described grinding crystal.
2. chemical and mechanical grinding method as claimed in claim 1, it is characterized in that, described grinding crystal is diamond.
3. chemical and mechanical grinding method as claimed in claim 1, it is characterized in that, the average diameter of described grinding crystal is in 30 ~ 40 micrometer ranges.
4. chemical and mechanical grinding method as claimed in claim 1, is characterized in that, provide cross section to be pentagonal grinding crystal.
5. chemical and mechanical grinding method as claimed in claim 1, is characterized in that, the step arranging magnetic material layer at grinding plane of crystal comprises: at described grinding crystal all surface coated magnetic material layer;
After the grinding crystal being provided with magnetic material layer is placed in the step of adjuster, described chemical and mechanical grinding method also comprises: the magnetic material layer removing the grinding plane of crystal exposed from adjuster.
6. chemical and mechanical grinding method as claimed in claim 1, is characterized in that, the step arranging magnetic material layer at grinding plane of crystal comprises: be coated with described magnetic material layer at described grinding plane of crystal.
7. chemical and mechanical grinding method as claimed in claim 1, it is characterized in that, described magnetic material layer is cobalt layers, nickel dam or cobalt-nickel alloy layer.
8. chemical and mechanical grinding method as claimed in claim 1, it is characterized in that, the thickness of described magnetic material layer is in the scope of 5 ~ 10 microns.
9. a chemical mechanical polishing device, is characterized in that, comprising:
Grinding pad;
Be placed in the adjuster above described grinding pad;
Grinding crystal, at least part of surface coverage magnetic material layer of described grinding crystal, described grinding crystal is embedded in the described adjuster one side relative with grinding pad, and a part for grinding crystal is embedded in described adjuster, and another part exposes described adjuster;
Magnetic absorption dish, is located on described adjuster, for the grinding crystal that absorptive collection drops from adjuster.
10. chemical mechanical polishing device as claimed in claim 9, it is characterized in that, described grinding crystal is all coated with magnetic material layer except the part exposed from adjuster.
11. chemical mechanical polishing devices as claimed in claim 9, is characterized in that, described magnetic material layer is cobalt layers, nickel dam or cobalt-nickel alloy layer.
12. chemical mechanical polishing devices as claimed in claim 9, it is characterized in that, the thickness of described magnetic material layer is in the scope of 5 ~ 10 microns.
13. chemical mechanical polishing devices as claimed in claim 9, it is characterized in that, described grinding crystal is diamond.
14. chemical mechanical polishing devices as claimed in claim 9, it is characterized in that, the average diameter of described grinding crystal is in 30 ~ 40 micrometer ranges.
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| CN201410443217.XA CN105437054B (en) | 2014-09-02 | 2014-09-02 | Chemical and mechanical grinding method and chemical mechanical polishing device |
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| CN201410443217.XA CN105437054B (en) | 2014-09-02 | 2014-09-02 | Chemical and mechanical grinding method and chemical mechanical polishing device |
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| CN108621033A (en) * | 2017-03-21 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | The grinding method of grinding pad |
| CN110450046A (en) * | 2018-05-07 | 2019-11-15 | 中芯国际集成电路制造（天津）有限公司 | Abrasive disk and chemical mechanical polishing device |
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