CN105437054B - Chemical and mechanical grinding method and chemical mechanical polishing device - Google Patents
Chemical and mechanical grinding method and chemical mechanical polishing device Download PDFInfo
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- CN105437054B CN105437054B CN201410443217.XA CN201410443217A CN105437054B CN 105437054 B CN105437054 B CN 105437054B CN 201410443217 A CN201410443217 A CN 201410443217A CN 105437054 B CN105437054 B CN 105437054B
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Abstract
A kind of chemical and mechanical grinding method of present invention offer and chemical mechanical polishing device, chemical and mechanical grinding method include：Grinding pad, adjuster are provided；Grinding crystal is provided, magnetic material layer is set in grinding plane of crystal；Grinding crystal is disposed in the regulators；One magnetic absorption disk is set on adjuster, the grinding crystal fallen from adjuster for absorptive collection.Chemical mechanical polishing device includes grinding pad, adjuster, grinding crystal, and grinding plane of crystal has magnetic material layer, and grinding crystal is in adjuster；Magnetic absorption disk is set on adjuster, the grinding crystal fallen from adjuster for absorptive collection.The beneficial effects of the present invention are what magnetic absorption disk can timely will fall off there is magnetic material layer grinding crystal to be adsorbed from grinding pad, will not cause to scratch to wafer to be ground in this way.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and in particular to a kind of chemical and mechanical grinding method and chemical mechanical grinding
Device.
Background technology
Chemical mechanical grinding (Chemical Mechanical Polishing, CMP) is used as must can not in semiconductor machining
One few of technique, the various material layer being used in wafer machining process on planarization wafer.Chemical mechanical grinding
Method is to utilize mechanical polishing principle, and the chemical assistant in lapping liquid is coordinated to be subject to the yo-yo profile of chip surface height
The planarization polished.Coordinate various parameters control, chemical mechanical grinding, which can make to be ground surface, reaches higher flatness.
With reference to the structural schematic diagram that figure 1 is chemical mechanical polishing device in the prior art, including：Grinding plate 5, grinding head
1 (head) and adjuster 3 (pad conditioner), 5 surface of grinding plate have grinding pad (not shown), grinding pad
Surface flow has lapping liquid (slurry)；Wafer 2 (wafer) is adsorbed on the bottom of the grinding head 1, and grinding plate 5 is according to one
Determine direction to rotate, while the grinding head 1 is also rotated according to certain orientation, grinding pad and lapping liquid carry out the wafer 2
Chemical mechanical grinding.
The bottom of the adjuster 3 is equipped with the grinding layer 4 with grinding crystal (abrasive crystal), ground
The one side of Cheng Zhong, adjuster 3 can make lapping liquid be more evenly distributed on grinding pad, on the other hand, have grinding crystal
Abrasive grains in lapping liquid can further be smashed, be refined by grinding layer 4, keep abrasive grains distribution more uniform.
But existing chemical mechanical polishing device is still not able to well be ground wafer, therefore, how into
One step promotes the grinding effect of chemical mechanical grinding, becomes those skilled in the art's technical problem urgently to be resolved hurrily.
Invention content
Problems solved by the invention be by providing a kind of chemical and mechanical grinding method and chemical mechanical polishing device, with
Promote the grinding effect of chemical mechanical grinding.
To solve the above problems, the present invention provides a kind of chemical and mechanical grinding method, including：
The adjuster that one grinding pad is provided and is placed in above the grinding pad；
If providing dry grinding crystal；
On at least partly surface of the grinding crystal, magnetic material layer is set；
The grinding crystal for being provided with magnetic material layer is placed in the adjuster one side opposite with grinding pad, it is described
A part for crystal is ground in the adjuster, another part exposes the adjuster；
One magnetic absorption disk is set on the adjuster；
Chemical mechanical grinding is carried out, in chemical mechanical planarization process, magnetic absorption disk adsorbs the grinding crystal.
Optionally, the grinding crystal is diamond.
Optionally, the average diameter of the grinding crystal is in 30~40 micron ranges.
Optionally, it is in pentagonal grinding crystal to provide section.
Optionally, include the step of grinding plane of crystal setting magnetic material layer：In the grinding crystal all surface
Coated magnetic material layer；
After the step of grinding crystal for being provided with magnetic material layer is placed in adjuster, the chemical mechanical grinding side
Method further includes：Remove the magnetic material layer of the grinding plane of crystal exposed from adjuster.
Optionally, include the step of grinding plane of crystal setting magnetic material layer：It is coated in the grinding plane of crystal
The magnetic material layer.
Optionally, the magnetic material layer is cobalt layers, nickel layer or cobalt-nickel alloy layer.
Optionally, the thickness of the magnetic material layer is in the range of 5~10 microns.
In addition, the present invention also provides a kind of chemical mechanical polishing devices, including：
Grinding pad；
The adjuster being placed in above the grinding pad；
Crystal is ground, at least partly surface of the grinding crystal is covered with magnetic material layer, and the grinding crystal is embedded in
In the adjuster one side opposite with grinding pad, a part for crystal is ground in the adjuster, another part exposes
The adjuster；
Magnetic absorption disk is set on the adjuster, the grinding crystal fallen from adjuster for absorptive collection.
Optionally, the grinding crystal is all covered with magnetic material layer in addition to the part exposed from adjuster.
Optionally, the magnetic material layer is cobalt layers, nickel layer or cobalt-nickel alloy layer.
Optionally, the thickness of the magnetic material layer is in the range of 5~10 microns.
Optionally, the grinding crystal is diamond.
Optionally, the average diameter of the grinding crystal is in 30~40 micron ranges.
Compared with prior art, technical scheme of the present invention has the following advantages：
By grinding crystal of the setting with magnetic material layer, and a magnetic absorption disk is set on adjuster, in chemistry
In mechanical grinding process, magnetic absorption disk be conducive to reduce with magnetic material layer grinding crystal fallen from adjuster it is several
Rate；Even if grinding crystal is fallen on grinding pad, the grinding crystal that magnetic absorption disk can timely fall these is from grinding
Absorptive collection gets up on pad, and the grinding crystal that can be fallen in this way to avoid these causes to scratch to wafer to be ground.
Further, first in entirely grinding plane of crystal coated magnetic material layer, after grinding crystal is placed on adjuster,
To carrying out pre-grinding from the grinding crystal of the adjuster exposed portion, with the magnetic material on removal grinding crystal exposed portion surface
Layer to avoid magnetic material layer from falling on grinding pad as possible, and then reduces influence of the magnetic material layer fallen to process of lapping.
Description of the drawings
Fig. 1 is the structural schematic diagram of chemical mechanical polishing device in the prior art；
Fig. 2 to Fig. 8 is the structural schematic diagram of each step in one embodiment of chemical and mechanical grinding method of the present invention.
Specific implementation mode
Existing chemical mechanical polishing device is still not able to well be ground wafer, on the one hand the reason is that,
With reference to figure 1, the grinding crystal in grinding layer 4 is constantly under pressure in process of lapping and frictional force, thus by one
It may fall off and fall on grinding plate 5 after the use of section time, and then be easy that wafer 2 is caused to scratch.Existing adjusting
Device 3 is difficult to accomplish to ensure that grinding crystal is not fallen, and the grinding crystal fallen is difficult to be cleaned up from grinding pad, and grinding crystal can mix
It is miscellaneous in the lapping liquid with abrasive grains, since the hardness of grinding crystal is larger, be very easy to scratch the table of wafer to be ground
Face, to influence the grinding effect of chemical mechanical grinding.
For this purpose, the present invention provides a kind of chemical and mechanical grinding method, including：One grinding pad is provided and is placed in described grind
The adjuster of mill pad top；If providing dry grinding crystal；On at least partly surface of the grinding crystal, magnetic material layer is set；
The grinding crystal for being provided with magnetic material layer is placed in the adjuster one side opposite with grinding pad, the grinding crystal
A part in the adjuster, another part exposes the adjuster；One magnetic absorption is set on the adjuster
Disk；Chemical mechanical grinding is carried out, in chemical mechanical planarization process, magnetic absorption disk adsorbs the grinding crystal.
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
First, a grinding pad is provided, and is placed in the adjuster above the grinding pad, the adjuster be used for into
So that lapping liquid is more evenly distributed on grinding pad when row chemical mechanical grinding, and the abrasive grains in lapping liquid are further beaten
Broken, refinement keeps abrasive grains distribution more uniform.
If providing dry grinding crystal；With reference to the structural schematic diagram that figure 2 is the grinding crystal 70 in the present invention, in the present embodiment
In, the grinding crystal 70 is that section is in pentagonal grinding crystal, wherein face 73 is used to adjust in subsequently grinding crystal 70 insertion
As the face contacted with adjuster when saving device, the tip that face 71 is constituted has been used for abrasive action.
But this structure is only an example of the present embodiment, the present invention does not make the shape of the grinding crystal 70
It limits, the grinding crystal 70 can be other any shapes.
In the present embodiment, the grinding crystal 70 is diamond (diamond).The hardness of diamond itself is very high, is suitble to
For the abrasive grains in refinement lapping liquid of polishing.But this is not limited by the present invention, the larger crystal of other hardness is same
Can be for use as the material of the grinding crystal, this is not limited by the present invention.
In the present embodiment, the average diameter of the grinding crystal 70 is in 30~40 micron ranges.Grind the flat of crystal
The smaller abrasive grains be conducive in polishing refinement lapping liquid of equal diameter.But this is only an example, in practical operation,
The average diameter of the grinding crystal 70 should be selected according to actual conditions, and the present invention is not limited in any way this.
With continued reference to Fig. 3, magnetic material layer 72 is set on at least partly surface of the grinding crystal 70.The magnetism material
The bed of material 72 can be adsorbed after follow-up placement on the controller by magnetic absorption disk, on the one hand can reduce grinding crystal 70
The probability fallen, on the other hand, even if fallen in process of lapping if on grinding pad being capable of quilt in time for the grinding crystal 70
Magnetic absorption disk picks up, into without scratching wafer to be ground.
In the present embodiment, magnetic material layer 72 is arranged on 70 surface of grinding crystal in the mode that coating may be used.
It specifically, can be by the way that the grinding crystal 70 be immersed in the magnetic metal of gel, to reach brilliant in grinding
The purpose of 70 surface magnetic materials for painting and coating layer 72 of body.
It should be noted that above method is only an example of the present embodiment, the present invention is directed in grinding 70 table of crystal
Magnetic material layer 72 is arranged in face, is not construed as limiting for the magnetic material layer 72 specifically how is arranged, in other realities of the present invention
The magnetic material layer 72 can also be arranged otherwise by applying in example, for example, being coated in magnetic material layer 72 with brush
Grind 70 surface of crystal.
In the present embodiment, the magnetic material layer 72 coats entire grinding crystal 70, because of the individual of grinding crystal 70
Size is smaller, and magnetic material layer 72 is formed relative to fairly simple quick on entirely 70 surface of grinding crystal.
Since the present invention is directed to form magnetic material layer 72 on 70 surface of grinding crystal to be inhaled by magnetic absorption disk
It is attached, so whether the present invention in all surface of grinding crystal 70 to that must be respectively formed magnetic material layer 72 and be not construed as limiting, at this
In the other embodiment of invention, the magnetic material layer 72 can also only be formed in the part surface of grinding crystal 70.
Further, in the present embodiment, the magnetic material layer 72 can be the magnetic of the alloy of cobalt, nickel or cobalt nickel metal
Property material layer, these metals treat the less pollution of grinding crystal wafer.But the present invention to this and is not construed as limiting.
Further, in order to keep the magnetic material layer 72 sufficiently thick, with enough magnetic with can be by the magnetism
Suction tray adsorbs, and is unlikely to blocked up influence grinding crystal 70 and is embedded in adjuster 100, in the present embodiment, the magnetic material
The thickness of layer 72 is in the range of 5~10 microns.
It is the structural schematic diagram of adjuster 100 in the present embodiment with reference to figure 4.The adjuster is placed in the grinding pad
Above (not shown), the grinding crystal 70 for being provided with magnetic material layer 72 is set to adjuster 100 and grinding pad phase
To in (when being in the present embodiment directed downwardly), a part for the grinding crystal 70 is embedded in the adjuster 100
In, another part exposes the adjuster 100.
Specifically, in the present embodiment, the adjuster 100 includes adjusting head (conditioner head) 110, institute
It states the one side for adjusting head 110 towards grinding pad and connects other of chemical mechanical polishing device for grinding crystal 70, another side to be arranged
Component (such as some connecting rods etc.).Specifically, the one side for adjusting head 110 towards grinding pad is equipped with for inlaying described grind
The damascene layer (setting metal) 130 of crystal 70 is ground, the surface of the damascene layer 130 is additionally provided with protection metal
The coating 150 (coating) that mosaic coating 130 is not corroded.
It should be understood that above-mentioned 100 structure of adjuster is only an example of the present embodiment, the present invention couple
This is simultaneously not construed as limiting.
Since the magnetic material layer 72 coats entire grinding crystal 70 (with reference to figure 3 and Fig. 4), institute in the present embodiment
It is further comprising the steps of with after the grinding crystal 70 is embedded in the adjuster 100：
Remove the magnetic material layer 72 from 70 surface of grinding crystal of 100 exposed portion of adjuster.With reference to figure 5 and Fig. 6,
Fig. 5 is the post regulator 100 for the magnetic material layer 72 for removing this part and grinds the structural schematic diagram of crystal 70, and Fig. 6 is
The structural schematic diagram for removing the grinding crystal 70 after part magnetic material layer 72, from Fig. 5 and Fig. 6 it is found that removing this portion
Grinding crystal 70 after the magnetic material layer 72 divided exposes the face 71 of its abrasive action.
Due to the abrasive action from the grinding crystal 70 of 100 exposed portion of adjuster, this part surface is removed in advance
Magnetic material layer 72 can fall on to avoid magnetic material layer 72 on grinding pad, and then reduce the influence to process of lapping.
In the present embodiment, grinding crystal 70 can be made to carry out pre-grinding on grinding pad, and then removes this part
Magnetic material layer 72.Further, it is possible to carry out the pre-grinding using old grinding pad, and then cost can be saved.
The chemical and mechanical grinding method of the present invention further includes that a magnetic absorption disk is arranged on the adjuster 100, is used for
The grinding crystal 70 that absorptive collection is fallen from adjuster.With reference to figure 7 and Fig. 8, Fig. 7 is the adjuster 100 in real work
When schematic diagram, Fig. 8 be entire mechanical lapping equipment vertical view.
The grinding pad 200 is equipped with lapping liquid pipeline 210, and lapping liquid 220 flows on grinding pad 200；Grinding head 300
Wafer (not shown) to be ground is driven to be ground on the grinding pad 200, meanwhile, adjuster 100 drives in mechanical arm 191
Under move back and forth on 200 surface of the grinding pad, for making the lapping liquid on 200 surface of grinding pad be uniformly distributed, and by lapping liquid
In abrasive grains smash, refine.
The magnetic absorption disk 180 is set on the adjuster 100, is being ground for adsorbing to fall from adjuster 100
Grinding crystal 70 on pad 200.Since 70 surface of grinding crystal is equipped with magnetic material layer 72, grinding crystal 70 can be after the drops
It can be attracted on magnetic absorption disk 180, and then avoid grinding crystal 70 and stay on grinding pad 200 and scratch crystalline substance to be ground
Circle.
Specifically, the magnetic absorption disk 180 can be welding or be bonded on the adjuster 100, the present invention couple
This is simultaneously not construed as limiting.
In addition, the present invention also provides a kind of chemical mechanical polishing devices.In conjunction with Fig. 7 and Fig. 8, chemical machine of the invention is shown
The schematic diagram of one embodiment of tool grinding device, the chemical mechanical polishing device include：
Grinding pad 200；
It is placed in the adjuster 100 of 200 top of the grinding pad；
Crystal 70 is ground, in the present embodiment, the grinding crystal 70 is diamond (diamond).The hardness of diamond itself
It is very high, suitable for the abrasive grains in polishing refinement lapping liquid.But this is not limited by the present invention, other hardness are larger
Crystal equally can for use as it is described grinding crystal 70 material.
In the present embodiment, the average diameter of the grinding crystal is in 30~40 micron ranges.Grind the flat of crystal 70
The smaller abrasive grains be conducive in polishing refinement lapping liquid of equal diameter.But this is only an example, in practical operation,
The average diameter of the grinding crystal 70 should be selected according to actual conditions, and the present invention is not limited in any way this.
At least partly surface of the grinding crystal 70 is covered with magnetic material layer, and the magnetic material layer can be with reference chart
Magnetic material layer 72 in 5.The grinding crystal 70 is in the one side opposite with grinding pad 200 of the adjuster 100, grinding
A part for crystal 70 is embedded in the adjuster 100, and another part exposes the adjuster 100.
In the present embodiment, the magnetic material layer is only located at the table that the grinding crystal is embedded in the adjuster part
Face, that is to say, that the grinding crystal 70 is removed from the part that adjuster 100 exposes (with reference to the face 71 for grinding crystal 70 in figure 5)
It is all covered with magnetic material layer in addition.Grinding crystal 70 in this way plays the part of abrasive action, that is, exposes the portion of adjuster 100
Divide no magnetic material layer covering, in grinding, magnetic material will not be fallen on grinding pad 200, and then be reduced to be ground
The influence of wafer.
In the present embodiment, the magnetic material layer is to have magnetic cobalt, nickel or cobalt-nickel alloy layer.These metals pair
The less pollution of wafer to be ground.But the present invention to this and is not construed as limiting.
In the present embodiment, in order to keep the magnetic material layer 72 sufficiently thick, with enough magnetic with can be by institute
The absorption of magnetic absorption disk is stated, and is unlikely to blocked up influence grinding crystal 70 and is embedded in adjuster 100, in the present embodiment, the magnetic
The thickness of property material layer 72 is in the range of 5~10 microns.
Magnetic absorption disk is set on the adjuster, the grinding crystal fallen from adjuster for absorptive collection.
The magnetic absorption disk absorption grinding crystal with magnetic material layer, and then grinding crystal can be reduced from adjusting
The probability fallen on device；Even if grinding crystal is fallen on grinding pad, magnetic absorption disk can timely be ground what these fell
Mill crystal adsorbs from grinding pad, will not cause to scratch to wafer to be ground in this way.
It is further to note that the chemical mechanical polishing device of the present embodiment can be, but not limited to for above-mentioned chemistry
Mechanical grinding method.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. a kind of chemical and mechanical grinding method, which is characterized in that including：
The adjuster that one grinding pad is provided and is placed in above the grinding pad；
If providing dry grinding crystal；
On at least partly surface of the grinding crystal, magnetic material layer is set；
The grinding crystal for being provided with magnetic material layer is placed in the adjuster one side opposite with grinding pad, the grinding
A part for crystal is embedded in the adjuster, and another part exposes the adjuster；
One magnetic absorption disk is set on the adjuster；
Chemical mechanical grinding is carried out, in chemical mechanical planarization process, magnetic absorption disk adsorbs the grinding crystal；
Include grinding the step of magnetic material layer is arranged in plane of crystal：In the grinding crystal all surface coated magnetic material
Layer；
After the step of grinding crystal for being provided with magnetic material layer is placed in adjuster, the chemical and mechanical grinding method is also
Including：Remove the magnetic material layer of the grinding plane of crystal exposed from adjuster.
2. chemical and mechanical grinding method as described in claim 1, which is characterized in that the grinding crystal is diamond.
3. chemical and mechanical grinding method as described in claim 1, which is characterized in that the average diameter of the grinding crystal is 30
In~40 micron ranges.
4. chemical and mechanical grinding method as described in claim 1, which is characterized in that it is brilliant in pentagonal grinding to provide section
Body.
5. chemical and mechanical grinding method as described in claim 1, which is characterized in that magnetic material is arranged in grinding plane of crystal
Layer the step of include：It is coated with the magnetic material layer in the grinding plane of crystal.
6. chemical and mechanical grinding method as described in claim 1, which is characterized in that the magnetic material layer is cobalt layers, nickel layer
Or cobalt-nickel alloy layer.
7. chemical and mechanical grinding method as described in claim 1, which is characterized in that the thickness of the magnetic material layer 5~
In the range of 10 microns.
8. a kind of chemical mechanical polishing device, which is characterized in that including：
Grinding pad；
The adjuster being placed in above the grinding pad；
Crystal is ground, at least partly surface of the grinding crystal is covered with magnetic material layer, and the grinding crystal is embedded in described
In the adjuster one side opposite with grinding pad, a part for crystal is ground in the adjuster, described in another part exposing
Adjuster；
Magnetic absorption disk is set on the adjuster, the grinding crystal fallen from adjuster for absorptive collection；
The grinding crystal is all covered with magnetic material layer in addition to the part exposed from adjuster.
9. chemical mechanical polishing device as claimed in claim 8, which is characterized in that the magnetic material layer is cobalt layers, nickel layer
Or cobalt-nickel alloy layer.
10. chemical mechanical polishing device as claimed in claim 8, which is characterized in that the thickness of the magnetic material layer 5~
In the range of 10 microns.
11. chemical mechanical polishing device as claimed in claim 8, which is characterized in that the grinding crystal is diamond.
12. chemical mechanical polishing device as claimed in claim 8, which is characterized in that the average diameter of the grinding crystal exists
In 30~40 micron ranges.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410443217.XA CN105437054B (en) | 2014-09-02 | 2014-09-02 | Chemical and mechanical grinding method and chemical mechanical polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410443217.XA CN105437054B (en) | 2014-09-02 | 2014-09-02 | Chemical and mechanical grinding method and chemical mechanical polishing device |
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| Publication Number | Publication Date |
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| CN105437054A CN105437054A (en) | 2016-03-30 |
| CN105437054B true CN105437054B (en) | 2018-08-10 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108621033B (en) * | 2017-03-21 | 2020-04-07 | 中芯国际集成电路制造(上海)有限公司 | Polishing method of polishing pad |
| CN110450046B (en) * | 2018-05-07 | 2022-02-15 | 中芯国际集成电路制造（天津）有限公司 | Polishing disk and chemical mechanical polishing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101352834A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad collating unit and grinding pad collating method |
| CN102528652A (en) * | 2010-12-29 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding device |
| CN103273414A (en) * | 2013-04-09 | 2013-09-04 | 上海华力微电子有限公司 | Chemical-mechanical polishing device and method thereof |
| CN103878687A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | System for preventing wafer from being scratched by grinding mat |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5734730B2 (en) * | 2011-05-06 | 2015-06-17 | 新日鉄住金マテリアルズ株式会社 | Polishing cloth dresser |
| JP2014087900A (en) * | 2012-10-31 | 2014-05-15 | Bando Chem Ind Ltd | Polishing method |
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2014
- 2014-09-02 CN CN201410443217.XA patent/CN105437054B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101352834A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Grinding pad collating unit and grinding pad collating method |
| CN102528652A (en) * | 2010-12-29 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding device |
| CN103273414A (en) * | 2013-04-09 | 2013-09-04 | 上海华力微电子有限公司 | Chemical-mechanical polishing device and method thereof |
| CN103878687A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | System for preventing wafer from being scratched by grinding mat |
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