CN105428210B - 用于清洁等离子体工艺室部件的湿法清洁工艺 - Google Patents

用于清洁等离子体工艺室部件的湿法清洁工艺 Download PDF

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Publication number
CN105428210B
CN105428210B CN201510593168.2A CN201510593168A CN105428210B CN 105428210 B CN105428210 B CN 105428210B CN 201510593168 A CN201510593168 A CN 201510593168A CN 105428210 B CN105428210 B CN 105428210B
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Chinese (zh)
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CN105428210A (zh
Inventor
阿门·阿沃扬
肯尼特·贝隆
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/18—Cleaning before device manufacture, i.e. Begin-Of-Line process by combined dry cleaning and wet cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
CN201510593168.2A 2014-09-17 2015-09-17 用于清洁等离子体工艺室部件的湿法清洁工艺 Active CN105428210B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462051920P 2014-09-17 2014-09-17
US62/051,920 2014-09-17
US14/525,118 2014-10-27
US14/525,118 US9406534B2 (en) 2014-09-17 2014-10-27 Wet clean process for cleaning plasma processing chamber components

Publications (2)

Publication Number Publication Date
CN105428210A CN105428210A (zh) 2016-03-23
CN105428210B true CN105428210B (zh) 2018-06-15

Family

ID=55455446

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510593168.2A Active CN105428210B (zh) 2014-09-17 2015-09-17 用于清洁等离子体工艺室部件的湿法清洁工艺

Country Status (5)

Country Link
US (1) US9406534B2 (https=)
JP (1) JP6584249B2 (https=)
KR (1) KR20160033056A (https=)
CN (1) CN105428210B (https=)
TW (1) TWI693651B (https=)

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* Cited by examiner, † Cited by third party
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US20190070639A1 (en) * 2017-09-07 2019-03-07 Applied Materials, Inc. Automatic cleaning machine for cleaning process kits
KR102461911B1 (ko) * 2018-07-13 2022-10-31 삼성전자주식회사 플라즈마 제네레이터, 이를 포함하는 세정수 처리 장치, 반도체 세정 장치 및 세정수 처리 방법
US11488848B2 (en) * 2018-07-31 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated semiconductor die vessel processing workstations
KR102836261B1 (ko) * 2018-09-21 2025-07-18 램 리써치 코포레이션 플라즈마 프로세싱 챔버를 컨디셔닝하기 위한 방법
KR102156980B1 (ko) * 2018-11-28 2020-09-16 배기백 차량의 크롬몰딩 복원방법
KR102024757B1 (ko) * 2019-02-15 2019-09-24 (주)에이텍솔루션 이온 소스의 세정 방법 및 이를 이용한 반도체 소자의 제조 방법
KR102027183B1 (ko) * 2019-03-08 2019-10-01 (주)에이텍솔루션 이온 소스의 세정 방법 및 이를 이용한 반도체 소자의 제조 방법
WO2021126889A1 (en) * 2019-12-17 2021-06-24 Applied Materials, Inc. Surface profiling and texturing of chamber components
CN111534825B (zh) * 2020-05-14 2022-05-31 富乐德科技发展（大连）有限公司 去除半导体设备不锈钢部件钛及氮化钛沉积膜的工艺
US20210391150A1 (en) * 2020-06-10 2021-12-16 Plasma-Therm Llc Plasma Source Configuration
US12237186B2 (en) * 2022-09-15 2025-02-25 Applied Materials, Inc. On-board cleaning of tooling parts in hybrid bonding tool
CN118988887A (zh) * 2024-09-26 2024-11-22 安徽富乐德科技发展股份有限公司 一种带有复杂的空腔结构的shower head的清洗工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150762A (en) * 1998-01-26 2000-11-21 Samsung Electronics Co., Ltd. Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby
US6902627B2 (en) * 2002-11-25 2005-06-07 Applied Materials, Inc. Cleaning chamber surfaces to recover metal-containing compounds
CN102016122A (zh) * 2008-05-02 2011-04-13 欧瑞康贸易股份公司(特吕巴赫) 从工件上脱层的方法及脱层溶液

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100445273B1 (ko) * 2001-10-26 2004-08-21 손정하 세라믹 절연체의 세정방법
CN100382230C (zh) * 2002-04-17 2008-04-16 兰姆研究公司 硅电极及其生产方法、生产硅部件及加工半导体晶片方法
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US7077918B2 (en) * 2004-01-29 2006-07-18 Unaxis Balzers Ltd. Stripping apparatus and method for removal of coatings on metal surfaces
US20090142247A1 (en) * 2007-12-03 2009-06-04 Applied Materials, Inc. Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide
US8075701B2 (en) * 2008-06-30 2011-12-13 Lam Research Corporation Processes for reconditioning multi-component electrodes
US8734586B2 (en) * 2012-02-02 2014-05-27 Sematech, Inc. Process for cleaning shield surfaces in deposition systems

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150762A (en) * 1998-01-26 2000-11-21 Samsung Electronics Co., Ltd. Method of manufacturing cathode for plasma etching apparatus using chemical surface treatment with potassium hydroxide (KOH), and cathode manufactured thereby
US6902627B2 (en) * 2002-11-25 2005-06-07 Applied Materials, Inc. Cleaning chamber surfaces to recover metal-containing compounds
CN102016122A (zh) * 2008-05-02 2011-04-13 欧瑞康贸易股份公司(特吕巴赫) 从工件上脱层的方法及脱层溶液

Also Published As

Publication number Publication date
US9406534B2 (en) 2016-08-02
TWI693651B (zh) 2020-05-11
TW201626486A (zh) 2016-07-16
CN105428210A (zh) 2016-03-23
JP2016063226A (ja) 2016-04-25
KR20160033056A (ko) 2016-03-25
JP6584249B2 (ja) 2019-10-02
US20160079096A1 (en) 2016-03-17

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