CN105385995B - 溅射靶材 - Google Patents

溅射靶材 Download PDF

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Publication number
CN105385995B
CN105385995B CN201510536644.7A CN201510536644A CN105385995B CN 105385995 B CN105385995 B CN 105385995B CN 201510536644 A CN201510536644 A CN 201510536644A CN 105385995 B CN105385995 B CN 105385995B
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CN
China
Prior art keywords
zto
test
sintered body
target material
sputtering target
Prior art date
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Active
Application number
CN201510536644.7A
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English (en)
Chinese (zh)
Other versions
CN105385995A (zh
Inventor
福岛英子
上坂修治郎
玉田悠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of CN105385995A publication Critical patent/CN105385995A/zh
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN201510536644.7A 2014-08-27 2015-08-27 溅射靶材 Active CN105385995B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014172233A JP6041219B2 (ja) 2014-08-27 2014-08-27 スパッタリングターゲット
JP2014-172233 2014-08-27

Publications (2)

Publication Number Publication Date
CN105385995A CN105385995A (zh) 2016-03-09
CN105385995B true CN105385995B (zh) 2019-11-19

Family

ID=55418759

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510536644.7A Active CN105385995B (zh) 2014-08-27 2015-08-27 溅射靶材

Country Status (4)

Country Link
JP (1) JP6041219B2 (ko)
KR (2) KR20160025459A (ko)
CN (1) CN105385995B (ko)
TW (1) TW201607914A (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020170949A1 (ja) * 2019-02-18 2020-08-27 出光興産株式会社 酸化物焼結体、スパッタリングターゲット及びスパッタリングターゲットの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038796A (zh) * 2006-03-15 2007-09-19 住友金属矿山株式会社 氧化物烧结体、其制造方法、用它制造透明导电膜的方法以及所得的透明导电膜

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010052A (ja) * 2007-06-26 2009-01-15 Kobe Steel Ltd 表示装置の製造方法
JP5309722B2 (ja) * 2007-11-14 2013-10-09 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP2009123957A (ja) 2007-11-15 2009-06-04 Sumitomo Chemical Co Ltd 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ
JP2009212033A (ja) 2008-03-06 2009-09-17 Sumitomo Chemical Co Ltd 透明導電性結晶膜の製造方法
JP5024226B2 (ja) * 2008-08-06 2012-09-12 日立金属株式会社 酸化物焼結体およびその製造方法、スパッタリングターゲット、半導体薄膜
JP2012180247A (ja) 2011-03-02 2012-09-20 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット
JP2012180248A (ja) * 2011-03-02 2012-09-20 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット
JP5725610B2 (ja) * 2011-04-29 2015-05-27 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP6212869B2 (ja) * 2012-02-06 2017-10-18 三菱マテリアル株式会社 酸化物スパッタリングターゲット
JP2014062316A (ja) 2012-09-03 2014-04-10 Idemitsu Kosan Co Ltd スパッタリングターゲット

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038796A (zh) * 2006-03-15 2007-09-19 住友金属矿山株式会社 氧化物烧结体、其制造方法、用它制造透明导电膜的方法以及所得的透明导电膜

Also Published As

Publication number Publication date
JP2016044357A (ja) 2016-04-04
KR20160025459A (ko) 2016-03-08
KR101884563B1 (ko) 2018-08-01
KR20170039627A (ko) 2017-04-11
TWI560168B (ko) 2016-12-01
CN105385995A (zh) 2016-03-09
JP6041219B2 (ja) 2016-12-07
TW201607914A (zh) 2016-03-01

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