CN105378847B - Dram子阵列级自动刷新存储器控制器优化 - Google Patents
Dram子阵列级自动刷新存储器控制器优化 Download PDFInfo
- Publication number
- CN105378847B CN105378847B CN201480039303.2A CN201480039303A CN105378847B CN 105378847 B CN105378847 B CN 105378847B CN 201480039303 A CN201480039303 A CN 201480039303A CN 105378847 B CN105378847 B CN 105378847B
- Authority
- CN
- China
- Prior art keywords
- refresh
- row
- dram
- subarray
- command
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40618—Refresh operations over multiple banks or interleaving
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1605—Handling requests for interconnection or transfer for access to memory bus based on arbitration
- G06F13/161—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement
- G06F13/1636—Handling requests for interconnection or transfer for access to memory bus based on arbitration with latency improvement using refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361845818P | 2013-07-12 | 2013-07-12 | |
| US61/845,818 | 2013-07-12 | ||
| US14/148,515 | 2014-01-06 | ||
| US14/148,515 US9524771B2 (en) | 2013-07-12 | 2014-01-06 | DRAM sub-array level autonomic refresh memory controller optimization |
| PCT/US2014/038845 WO2015005975A1 (en) | 2013-07-12 | 2014-05-20 | Dram sub-array level autonomic refresh memory controller optimization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105378847A CN105378847A (zh) | 2016-03-02 |
| CN105378847B true CN105378847B (zh) | 2018-06-12 |
Family
ID=52276986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480039303.2A Expired - Fee Related CN105378847B (zh) | 2013-07-12 | 2014-05-20 | Dram子阵列级自动刷新存储器控制器优化 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9524771B2 (https=) |
| EP (1) | EP3020046A1 (https=) |
| JP (1) | JP6211186B2 (https=) |
| KR (1) | KR101763312B1 (https=) |
| CN (1) | CN105378847B (https=) |
| WO (1) | WO2015005975A1 (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9412433B2 (en) * | 2014-01-22 | 2016-08-09 | Nanya Technology Corp. | Counter based design for temperature controlled refresh |
| US9659626B1 (en) | 2015-12-26 | 2017-05-23 | Intel Corporation | Memory refresh operation with page open |
| KR102399475B1 (ko) | 2015-12-28 | 2022-05-18 | 삼성전자주식회사 | 리프레쉬 콘트롤러 및 이를 포함하는 메모리 장치 |
| US10474581B2 (en) * | 2016-03-25 | 2019-11-12 | Micron Technology, Inc. | Apparatuses and methods for cache operations |
| US9514800B1 (en) * | 2016-03-26 | 2016-12-06 | Bo Liu | DRAM and self-refresh method |
| US10490251B2 (en) | 2017-01-30 | 2019-11-26 | Micron Technology, Inc. | Apparatuses and methods for distributing row hammer refresh events across a memory device |
| US10845866B2 (en) * | 2017-06-22 | 2020-11-24 | Micron Technology, Inc. | Non-volatile memory system or sub-system |
| US10109339B1 (en) * | 2017-07-28 | 2018-10-23 | Micron Technology, Inc. | Memory devices with selective page-based refresh |
| KR102499255B1 (ko) | 2018-02-19 | 2023-02-13 | 에스케이하이닉스 주식회사 | 통합 메모리 디바이스 및 그의 동작 방법 |
| KR102414047B1 (ko) | 2017-10-30 | 2022-06-29 | 에스케이하이닉스 주식회사 | 통합 메모리 디바이스 및 그의 동작 방법 |
| US11544168B2 (en) | 2017-10-30 | 2023-01-03 | SK Hynix Inc. | Memory system |
| WO2019222960A1 (en) | 2018-05-24 | 2019-11-28 | Micron Technology, Inc. | Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling |
| US10573370B2 (en) | 2018-07-02 | 2020-02-25 | Micron Technology, Inc. | Apparatus and methods for triggering row hammer address sampling |
| KR102578002B1 (ko) * | 2018-07-03 | 2023-09-14 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 이의 동작 방법 |
| US10685696B2 (en) | 2018-10-31 | 2020-06-16 | Micron Technology, Inc. | Apparatuses and methods for access based refresh timing |
| US10636476B2 (en) * | 2018-11-01 | 2020-04-28 | Intel Corporation | Row hammer mitigation with randomization of target row selection |
| CN113168861B (zh) | 2018-12-03 | 2024-05-14 | 美光科技公司 | 执行行锤刷新操作的半导体装置 |
| CN117198356A (zh) | 2018-12-21 | 2023-12-08 | 美光科技公司 | 用于目标刷新操作的时序交错的设备和方法 |
| US10957377B2 (en) | 2018-12-26 | 2021-03-23 | Micron Technology, Inc. | Apparatuses and methods for distributed targeted refresh operations |
| US11615831B2 (en) | 2019-02-26 | 2023-03-28 | Micron Technology, Inc. | Apparatuses and methods for memory mat refresh sequencing |
| US11227649B2 (en) | 2019-04-04 | 2022-01-18 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of targeted refresh operations |
| US11069393B2 (en) | 2019-06-04 | 2021-07-20 | Micron Technology, Inc. | Apparatuses and methods for controlling steal rates |
| US10978132B2 (en) | 2019-06-05 | 2021-04-13 | Micron Technology, Inc. | Apparatuses and methods for staggered timing of skipped refresh operations |
| US11023171B2 (en) * | 2019-07-17 | 2021-06-01 | Micron Technology, Inc. | Performing a refresh operation based on a write to read time difference |
| US11302374B2 (en) | 2019-08-23 | 2022-04-12 | Micron Technology, Inc. | Apparatuses and methods for dynamic refresh allocation |
| US11302377B2 (en) * | 2019-10-16 | 2022-04-12 | Micron Technology, Inc. | Apparatuses and methods for dynamic targeted refresh steals |
| CN111158585B (zh) * | 2019-11-27 | 2023-08-01 | 核芯互联科技(青岛)有限公司 | 一种内存控制器刷新优化方法、装置、设备和存储介质 |
| US11309010B2 (en) | 2020-08-14 | 2022-04-19 | Micron Technology, Inc. | Apparatuses, systems, and methods for memory directed access pause |
| US11380382B2 (en) | 2020-08-19 | 2022-07-05 | Micron Technology, Inc. | Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit |
| US11348631B2 (en) | 2020-08-19 | 2022-05-31 | Micron Technology, Inc. | Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed |
| CN114255799B (zh) * | 2020-09-22 | 2023-10-17 | 长鑫存储技术有限公司 | 存储器数据刷新方法及其控制器、存储器 |
| US11557331B2 (en) | 2020-09-23 | 2023-01-17 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh operations |
| US12308069B2 (en) * | 2020-10-26 | 2025-05-20 | Qualcomm Incorporated | DRAM with quick random row refresh for rowhammer mitigation |
| US11222686B1 (en) | 2020-11-12 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for controlling refresh timing |
| US11264079B1 (en) | 2020-12-18 | 2022-03-01 | Micron Technology, Inc. | Apparatuses and methods for row hammer based cache lockdown |
| KR102890189B1 (ko) | 2021-08-26 | 2025-11-21 | 삼성전자주식회사 | 메모리 장치 |
| KR20230031617A (ko) * | 2021-08-27 | 2023-03-07 | 에스케이하이닉스 주식회사 | 데이터를 리프레쉬하는 데이터 저장 장치 및 그 동작 방법 |
| US20250140300A1 (en) * | 2022-02-04 | 2025-05-01 | Google Llc | Traffic Aware Adaptive Precharge Scheduler For Efficient Refresh Management In Dram Memory Controllers |
| US12112787B2 (en) | 2022-04-28 | 2024-10-08 | Micron Technology, Inc. | Apparatuses and methods for access based targeted refresh operations |
| US12125514B2 (en) | 2022-04-28 | 2024-10-22 | Micron Technology, Inc. | Apparatuses and methods for access based refresh operations |
| CN115691604A (zh) * | 2022-10-27 | 2023-02-03 | 湖南国科微电子股份有限公司 | 存储器刷新控制方法、刷新控制器及电子设备 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1723507A (zh) * | 2003-05-13 | 2006-01-18 | 矽利康创新股份有限公司 | 半导体存储器器件及其操作方法 |
| CN102017588A (zh) * | 2008-04-25 | 2011-04-13 | 艾利森电话股份有限公司 | 用于通信网络中交互式呼叫方信息服务的方法和装置 |
| CN102656638A (zh) * | 2009-12-16 | 2012-09-05 | 美光科技公司 | 用于减小半导体存储器装置中阵列干扰的影响的技术 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010040833A1 (en) | 1998-12-04 | 2001-11-15 | Zohar Bogin | Method and apparatus for self timing refresh |
| JP2001357670A (ja) * | 2000-04-14 | 2001-12-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP2004502267A (ja) | 2000-07-07 | 2004-01-22 | モサイド・テクノロジーズ・インコーポレイテッド | アクセス待ち時間が均一な高速ｄｒａｍアーキテクチャ |
| JP2003123470A (ja) * | 2001-10-05 | 2003-04-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US20040228168A1 (en) * | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
| JP2006107245A (ja) * | 2004-10-07 | 2006-04-20 | Canon Inc | メモリコントローラ |
| US7433261B2 (en) * | 2005-10-17 | 2008-10-07 | Infineon Technologies Ag | Directed auto-refresh for a dynamic random access memory |
| JP2009181666A (ja) | 2008-01-31 | 2009-08-13 | Sony Corp | 半導体メモリ装置およびその動作方法 |
| US7755967B2 (en) * | 2008-09-29 | 2010-07-13 | Qimonda North America Corp. | Memory device refresh method and apparatus |
| US9286965B2 (en) | 2010-12-03 | 2016-03-15 | Rambus Inc. | Memory refresh method and devices |
| US9293187B2 (en) | 2011-09-26 | 2016-03-22 | Cisco Technology, Inc. | Methods and apparatus for refreshing digital memory circuits |
| US8982654B2 (en) | 2013-07-05 | 2015-03-17 | Qualcomm Incorporated | DRAM sub-array level refresh |
-
2014
- 2014-01-06 US US14/148,515 patent/US9524771B2/en active Active
- 2014-05-20 JP JP2016525343A patent/JP6211186B2/ja not_active Expired - Fee Related
- 2014-05-20 WO PCT/US2014/038845 patent/WO2015005975A1/en not_active Ceased
- 2014-05-20 CN CN201480039303.2A patent/CN105378847B/zh not_active Expired - Fee Related
- 2014-05-20 EP EP14733424.7A patent/EP3020046A1/en active Pending
- 2014-05-20 KR KR1020167003081A patent/KR101763312B1/ko not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1723507A (zh) * | 2003-05-13 | 2006-01-18 | 矽利康创新股份有限公司 | 半导体存储器器件及其操作方法 |
| CN102017588A (zh) * | 2008-04-25 | 2011-04-13 | 艾利森电话股份有限公司 | 用于通信网络中交互式呼叫方信息服务的方法和装置 |
| CN102656638A (zh) * | 2009-12-16 | 2012-09-05 | 美光科技公司 | 用于减小半导体存储器装置中阵列干扰的影响的技术 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150016203A1 (en) | 2015-01-15 |
| KR101763312B1 (ko) | 2017-07-31 |
| CN105378847A (zh) | 2016-03-02 |
| WO2015005975A1 (en) | 2015-01-15 |
| JP2016526750A (ja) | 2016-09-05 |
| JP6211186B2 (ja) | 2017-10-11 |
| KR20160030542A (ko) | 2016-03-18 |
| US9524771B2 (en) | 2016-12-20 |
| EP3020046A1 (en) | 2016-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180612 |