CN105355758A - COB packaging for large power LED - Google Patents
COB packaging for large power LED Download PDFInfo
- Publication number
- CN105355758A CN105355758A CN201510827744.5A CN201510827744A CN105355758A CN 105355758 A CN105355758 A CN 105355758A CN 201510827744 A CN201510827744 A CN 201510827744A CN 105355758 A CN105355758 A CN 105355758A
- Authority
- CN
- China
- Prior art keywords
- light source
- metal substrate
- led
- connecting line
- elargol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000003292 glue Substances 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 238000005538 encapsulation Methods 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a COB packaging for a large power LED. The COB packaging for a large power LED mainly solves the problems that an existing LED packaging is poor in heat radiation and is high in cost and short in service life. The COB packaging for a large power LED comprises a metal substrate (1), an insulating layer (2), a printing layer (3), a light source (4), a connecting line (5) and protection glue (6). The COB packaging for a large power LED is characterized in that: the insulating layer (2) is arranged on the metal substrate (1); the printing layer (3) is arranged on the insulating layer (2); the light source (4) is boned on the metal substrate (1) through silver elargol; the perihpery of the light source (4) is enclosed by the insulating layer (2) and the printing layer (3) so that a groove is formed; the inner wall and the bottom surface of the groove are electroplated with silver; the light source (4) is connected with the printing layer (3) through the connecting line (5); and the groove, the light source (4) and the connecting line (5) are covered by the protection glue (6). The COB packaging for a large power LED utilizes the elargol to bond an LED chip with the metal substrate, and realizes quick heat radiation of the LED chip, and can reduce the packaging cost and enhance the reliability for LED packaging at the same time, and can prolong the service life of the LED.
Description
Technical field
The present invention relates to LED technology field, particularly a kind of COB encapsulation of great power LED.
Background technology
LED package refers to the encapsulation of luminescence chip, and comparing integrated antenna package has relatively big difference, the encapsulation not only claimed wick of LED, but also can printing opacity, and the encapsulation of high-power LED also needs to consider its heat dissipation problem.Electric energy conversion is that the efficiency of luminous energy probably can only reach 30% to 40% by current LED, and remaining energy is converted mainly into heat energy.The useful life of LED can reduce along with the rising of temperature, and when temperature is higher than time to a certain degree, the luminous efficiency of LED can reduce, and therefore, the heat dissipation problem of great power LED is particularly important.Existing SMD (SurfaceMountedDevices) paster type encapsulation, be pasted onto on MCPCB (MetalCorePCB) metal base printed board by scolding tin and heat-conducting silicone grease, but because the heat conductivility of heat-conducting silicone grease is limited, contact area is less, and heat dispersion is extremely limited.And COB (ChipOnBoard) encapsulation by plurality of LEDs chip direct package on metal base printed board, directly can be dispelled the heat by metal base printed board, not only can reduce costs, its heat dispersion can also be strengthened.But, metal base printed board is made up of metal substrate, thermally conductive insulating layer and printed layers, the thermal conductivity of printed layers and metal substrate is good, but the thermal conductivity of thermally conductive insulating layer is poor, the heat that LED sends is obstructed at thermally conductive insulating layer place, well heat can not be shed, more limited in high-power LED application.
Summary of the invention
The object of the invention is to, for the deficiency of above-mentioned existing COB encapsulation, propose a kind of COB encapsulation of great power LED, to strengthen radiating effect, extend the useful life of LED, ensure the brightness of LED.
For achieving the above object, the present invention includes metal substrate 1, insulating barrier 2, printed layers 3, light source 4, connecting line 5 and protecting glue 6; It is characterized in that: metal substrate 1 is provided with insulating barrier 2; insulating barrier 2 is provided with printed layers 3; light source 4 sticks on metal substrate 1 by elargol; and its four periderms insulating barrier 2 and printed layers 3 surround formation groove; groove inner wall and bottom surface are electroplate with silver; light source 4 is connected with printed layers 3 by connecting line 5, and protecting glue (6) to be covered on groove and to cover light source 4 and connecting line 5.
Described metal substrate 1 is aluminium base or copper base.
Described light source 4 comprises positive-installed or flip-over type: the connected mode that positive-installed is mixed by serial or parallel connection or the connection in series-parallel of or many packed LED chips forms; Flip-over type light source comprises one or many flip LED chips 41 and aluminum nitride ceramic substrate 42, this or many flip LED chips 41 are linked together by the mode of serial or parallel connection or connection in series-parallel mixing, and bonding on aluminum nitride ceramic substrate 42 by elargol, aluminum nitride ceramic substrate 42 is bonded on metal substrate 1 by elargol again.
Described connecting line 5 comprises wire or sheet metal, is connected by the positive pole of light source 4 with negative pole with printed layers 3.
Described protecting glue 6 comprises silica gel and fluorescent material.
The present invention compared with prior art has the following advantages:
(1) the present invention is owing to adopting elargol that LED chip is bonding with metal substrate, and make the heat of LED chip to be directly transmitted on metal substrate by elargol, thermal conductivity is better;
(2) the present invention is owing to adopting the integrative packaging structure of metal base printed board and LED, and packaging cost is reduced, and reliability is higher;
Accompanying drawing explanation
Fig. 1 is the COB encapsulating structure schematic diagram that the present invention adopts positive-installed light source;
Fig. 2 is the COB encapsulating structure schematic diagram that the present invention adopts flip-over type light source.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the invention will be further described.
Embodiment 1
With reference to Fig. 1, COB encapsulation of the present invention, comprises metal substrate 1, insulating barrier 2, printed layers 3, light source 4, connecting line 5 and protecting glue 6;
Wherein, metal substrate 1 is aluminium base or copper base, and it is provided with insulating barrier 2 on the surface, and insulating barrier 2 is provided with printed layers 3.The connected mode that light source 4 is mixed by serial or parallel connection or the connection in series-parallel of one or many packed LED chips forms, and is sticked on metal substrate 1 by elargol.Four periderm insulating barriers 2 of light source 4 and printed layers 3 are surrounded and are formed groove, and groove inner wall and bottom surface are electroplate with silver.Connecting line 5 is wire or sheet metal, is connected by the positive pole of light source 4 with negative pole with printed layers 3.Protecting glue 6 adopts silica gel and doped with fluorescent material, to be covered on groove and to cover on light source 4 and connecting line 5, playing a protective role.
When LED chip is lit, sends blue light and activate the light-emitting phosphor in protecting glue 6; The heat produced in this process is delivered on metal substrate 1 by elargol; Because the heat conductivility of elargol and metal substrate 1 is all very excellent, the heat that LED chip produces can be fallen by conduction very soon and can not be obstructed, and can ensure that it is operated in lower temperature, the luminous efficiency of LED chip is ensured, meanwhile, useful life is extended
Embodiment 2
With reference to Fig. 2, metal substrate 1 adopts aluminium base, and itself and insulating barrier 2, printed layers 3 form aluminium base printed board;
Light source 4 adopts flip-over type structure, it comprises one or many flip LED chips (41) and aluminum nitride ceramic substrate (42), this or many flip LED chips (41) are linked together by the mode of serial or parallel connection or connection in series-parallel mixing, and bonding on aluminum nitride ceramic substrate (42) by elargol, aluminum nitride ceramic substrate (42) is bonded on metal substrate (1) by elargol again.Connecting line 5 adopts sheet metal printed layers 3 to be connected with ceramic substrate 42, and many strip metals sheet is connected with negative pole with the positive pole of flip LED chips 41 respectively by the electric conducting material on ceramic substrate 42 surface; Protecting glue 6 adopts silica gel and doped with fluorescent material, is coated on LED chip 41, and covers connecting line 5, plays a protective role.
When LED is lit, sends blue light and activate the light-emitting phosphor in protecting glue 6; The heat produced in this process is delivered on aluminum nitride ceramic substrate 42 by elargol, and heat is delivered on metal substrate 1 by elargol again by aluminum nitride ceramic substrate 42; Because the heat conductivility of elargol, aluminum nitride ceramic substrate 42, metal substrate 1 is all very excellent, the heat that flip LED chips 41 produces can be fallen by conduction very soon and can not be obstructed, can ensure that it is operated in lower temperature, the luminous efficiency of LED chip is ensured, meanwhile, useful life is extended.
On be only two preferred example of the present invention, do not form any limitation of the invention, obviously under design of the present invention, different changes and improvement can be carried out to its structure, but these be all at the row of protection of the present invention.
Claims (5)
1. the COB encapsulation of a great power LED, comprises metal substrate (1), insulating barrier (2), printed layers (3), light source (4), connecting line (5) and protecting glue (6); It is characterized in that: metal substrate (1) is provided with insulating barrier (2); insulating barrier (2) is provided with printed layers (3); light source (4) sticks on metal substrate (1) by elargol; and its four periderms insulating barrier (2) and printed layers (3) surround formation groove; groove inner wall and bottom surface are electroplate with silver; light source (4) is connected with printed layers (3) by connecting line (5), and protecting glue (6) to be covered on groove and to cover light source (4) and connecting line (5).
2. COB encapsulation according to claim 1, is characterized in that described metal substrate (1) is aluminium base or copper base.
3. COB encapsulation according to claim 1, is characterized in that described light source (4) comprises positive-installed or flip-over type;
The connected mode that described positive-installed is mixed by serial or parallel connection or the connection in series-parallel of one or many packed LED chips forms;
Described flip-over type light source comprises one or many flip LED chips (41) and aluminum nitride ceramic substrate (42), this or many flip LED chips (41) are linked together by the mode of serial or parallel connection or connection in series-parallel mixing, and bonding on aluminum nitride ceramic substrate (42) by elargol, aluminum nitride ceramic substrate (42) is bonded on metal substrate (1) by elargol again.
4. COB encapsulation according to claim 1, is characterized in that described connecting line (5) comprises wire or sheet metal, is connected by the positive pole of light source (4) with negative pole with printed layers (3).
5. COB encapsulation according to claim 1, is characterized in that described protecting glue (6) comprises silica gel and fluorescent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510827744.5A CN105355758A (en) | 2015-11-25 | 2015-11-25 | COB packaging for large power LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510827744.5A CN105355758A (en) | 2015-11-25 | 2015-11-25 | COB packaging for large power LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105355758A true CN105355758A (en) | 2016-02-24 |
Family
ID=55331684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510827744.5A Pending CN105355758A (en) | 2015-11-25 | 2015-11-25 | COB packaging for large power LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105355758A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057092A (en) * | 2016-07-30 | 2016-10-26 | 深圳浩翔光电技术有限公司 | Lamp panel and driving plate connecting structure for LED display screen |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201204204Y (en) * | 2008-01-31 | 2009-03-04 | 东莞市科锐德数码光电科技有限公司 | Ultra-high-power LED die set light source structure |
| CN101740707A (en) * | 2009-12-11 | 2010-06-16 | 晶科电子（广州）有限公司 | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode |
| CN102185090A (en) * | 2011-03-29 | 2011-09-14 | 晶科电子（广州）有限公司 | Luminescent device adopting COB (chip on board) packaging and manufacturing method thereof |
| CN202076265U (en) * | 2011-04-29 | 2011-12-14 | 深圳市瑞丰光电子股份有限公司 | LED module encapsulating structure and lighting device |
| CN202195315U (en) * | 2011-08-23 | 2012-04-18 | 佛山市国星光电股份有限公司 | LED area light source device |
| CN203871360U (en) * | 2014-07-10 | 2014-10-08 | 深圳市晶台股份有限公司 | COB packaging structure of polishing aluminum substrate |
| CN205122633U (en) * | 2015-11-25 | 2016-03-30 | 海盐丽光电子科技有限公司 | High -power LED's COB encapsulation |
-
2015
- 2015-11-25 CN CN201510827744.5A patent/CN105355758A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201204204Y (en) * | 2008-01-31 | 2009-03-04 | 东莞市科锐德数码光电科技有限公司 | Ultra-high-power LED die set light source structure |
| CN101740707A (en) * | 2009-12-11 | 2010-06-16 | 晶科电子（广州）有限公司 | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode |
| CN102185090A (en) * | 2011-03-29 | 2011-09-14 | 晶科电子（广州）有限公司 | Luminescent device adopting COB (chip on board) packaging and manufacturing method thereof |
| CN202076265U (en) * | 2011-04-29 | 2011-12-14 | 深圳市瑞丰光电子股份有限公司 | LED module encapsulating structure and lighting device |
| CN202195315U (en) * | 2011-08-23 | 2012-04-18 | 佛山市国星光电股份有限公司 | LED area light source device |
| CN203871360U (en) * | 2014-07-10 | 2014-10-08 | 深圳市晶台股份有限公司 | COB packaging structure of polishing aluminum substrate |
| CN205122633U (en) * | 2015-11-25 | 2016-03-30 | 海盐丽光电子科技有限公司 | High -power LED's COB encapsulation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057092A (en) * | 2016-07-30 | 2016-10-26 | 深圳浩翔光电技术有限公司 | Lamp panel and driving plate connecting structure for LED display screen |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160224 |