CN105336816A - 溶液法制备MoO3/硅纳米线阵列异质结太阳能电池的方法 - Google Patents
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Abstract
本发明公开了一种溶液法制备MoO3/硅纳米线阵列异质结太阳能电池的方法,属于光伏材料技术领域。本发明的技术方案要点为:利用无水氢化三氧化钼易溶于水或异丙醇的特性,将三氧化钼作为空穴传输层,本发明首先提出了将MoO3溶液旋涂于硅纳米线阵列制备异质结太阳能电池的方法,该方法无需高温高真空设备,制得的异质结太阳能电池与真空蒸镀法或有机物旋涂法制备的异质结太阳能电池相比能量转换效率相当,但是本发明制备的异质结太阳能电池稳定性明显提高。
Description
技术领域
本发明属于光伏材料技术领域,具体涉及一种溶液法制备MoO3/硅纳米线阵列异质结太阳能电池的方法。
背景技术
平面硅片对入射光具有30%-40%的反射率,较低的光吸收效率降低了MoO3/平面硅异质结太阳能电池短路电流密度,进而导致光电转换效率较低。硅纳米线阵列除具有半导体所具有的特殊性质外,还具有独特的光学、电学和化学性能,在纳米电子器件、光电子器件以及新能源等方面显示出良好的应用前景。对硅纳米线阵列光吸收谱的测试发现,仅需几微米厚度的硅纳米线阵列就可以实现高效的光吸收,这说明与现有的晶体硅光伏电池(厚度>100微米)相比,硅纳米线阵列光伏电池在材料方面可以大大降低生产成本。
硅纳米线阵列的控制合成在过去的几十年内取得了很大的进展,由彭奎庆等人组成的研究小组发现通过金属催化化学刻蚀方法制备硅纳米线阵列并将其应用于晶体硅太阳能电池上,这种方法的特点是很容易制备出直径均一规则排列的硅纳米线阵列并适应纳米器件的需要。利用硅纳米线阵列与有机物聚3,4-乙撑二氧噻吩和聚苯乙烯磺酸盐相结合,制备的有机无机杂化太阳能电池效率已达13.8%,但是由于有机物聚3,4-乙撑二氧噻吩和聚苯乙烯磺酸盐溶液具有酸性,对金属电极具有一定的腐蚀性,所以寻找一种能够取代有机物聚3,4-乙撑二氧噻吩和聚苯乙烯磺酸盐溶液的材料非常迫切。
发明内容
本发明解决的技术问题是提供了一种成本低廉且工艺简单的溶液法制备MoO3/硅纳米线阵列异质结太阳能电池的方法。
本发明为解决上述技术问题采用如下技术方案,溶液法制备MoO3/硅纳米线阵列异质结太阳能电池的方法,其特征在于具体步骤为:
(1)将硅基片依次用丙酮和酒精超声震荡后用双氧水与硫酸的混合清洗液加热煮沸10min,其中双氧水与硫酸的体积比为1:3;
(2)将步骤(1)清洗过的硅基片置于填充有HF-AgNO3腐蚀液的高压反应釜中,该HF-AgNO3腐蚀液中HF与AgNO3的摩尔浓度分别为0.1mol/L,高压反应釜密封后放入烘箱中于50℃处理30min;
(3)从高压反应釜中取出硅基片,用去离子水将硅基片表面覆盖的银灰色金属包覆物清洗干净,然后将硅基片置于王水中加热煮沸2min去除硅基片表面的金属包覆物及银颗粒;
(4)将硅基片用去离子水清洗干净后放入质量浓度为10%的HF溶液中浸泡10s去除硅基片表面的自然氧化物,再用去离子水清洗干净,然后用氮气吹干后得到带有纳米线阵列的硅基片备用;
(5)将0.2g纯度为99.99%的钼粉、20mL乙醇和0.7mL双氧水置于反应釜中并混合均匀,然后将反应釜密封后于60℃反应20h得到无水氢化三氧化钼,然后真空干燥备用;
(6)将无水氢化三氧化钼溶于去离子水或异丙醇中形成MoO3溶液,将MoO3溶液旋涂于带有纳米线阵列的硅基片上,旋涂速率为5000rpm,旋涂时间40s,然后于140℃退火去除水分或异丙醇溶剂;
(7)将步骤(6)处理后的硅基片分别镀上厚度为10nm的透明导电铜电极作为正极和厚度为100nm的铝电极作为负极得到MoO3/硅纳米线阵列异质结太阳能电池。
本发明与现有技术相比具有以下有益效果:利用无水氢化三氧化钼易溶于水或异丙醇的特性,将三氧化钼作为空穴传输层,首先提出了将MoO3溶液旋涂于硅纳米线阵列制备异质结太阳能电池的方法,该方法无需高温高真空设备,制得的异质结太阳能电池与真空蒸镀法或有机物旋涂法制备的异质结太阳能电池相比能量转换效率相当,但是本发明制备的异质结太阳能电池稳定性明显提高。
具体实施方式
以下通过实施例对本发明的上述内容做进一步详细说明,但不应该将此理解为本发明上述主题的范围仅限于以下的实施例,凡基于本发明上述内容实现的技术均属于本发明的范围。
实施例1
(1)将硅基片依次用丙酮和酒精超声震荡后用双氧水与硫酸的混合清洗液加热煮沸10min,其中双氧水与硫酸的体积比为1:3;
(2)将步骤(1)清洗过的硅基片置于填充有HF-AgNO3腐蚀液的高压反应釜中,该HF-AgNO3腐蚀液中HF与AgNO3的摩尔浓度分别为0.1mol/L,高压反应釜密封后放入烘箱中于50℃处理30min;
(3)从高压反应釜中取出硅基片,用去离子水将硅基片表面覆盖的银灰色金属包覆物清洗干净,然后将硅基片置于王水(V(HCl):V(HNO3)=3:1)中加热煮沸2min去除硅基片表面的金属包覆物及银颗粒;
(4)将硅基片用去离子水清洗干净后放入质量浓度为10%的HF溶液中浸泡10s去除硅基片表面的自然氧化物,再用去离子水清洗干净,然后用氮气吹干后得到带有纳米线阵列的硅基片备用;
(5)将0.2g纯度为99.99%的钼粉、20mL乙醇和0.7mL双氧水置于反应釜中并混合均匀,然后将反应釜密封后于60℃反应20h得到无水氢化三氧化钼,然后真空干燥备用;
(6)将无水氢化三氧化钼溶于去离子水或异丙醇中形成MoO3溶液,将MoO3溶液旋涂于带有纳米线阵列的硅基片上,旋涂速率为5000rpm,旋涂时间40s,然后于140℃退火去除水分或异丙醇溶剂;
(7)将步骤(6)处理后的硅基片分别镀上厚度为10nm的透明导电铜电极作为正极和厚度为100nm的铝电极作为负极得到MoO3/硅纳米线阵列异质结太阳能电池。
对比例1
(1)将硅基片依次用丙酮和酒精超声震荡后用双氧水与硫酸的混合清洗液加热煮沸10min,其中双氧水与硫酸的体积比为1:3;
(2)将步骤(1)清洗过的硅基片置于填充有HF-AgNO3腐蚀液的高压反应釜中,该HF-AgNO3腐蚀液中HF与AgNO3的摩尔浓度分别为0.1mol/L,高压反应釜密封后放入烘箱中于50℃处理30min;
(3)从高压反应釜中取出硅基片,用去离子水将硅基片表面覆盖的银灰色金属包覆物清洗干净,然后将硅基片置于王水(V(HCl):V(HNO3)=3:1)中加热煮沸2min去除硅基片表面的金属包覆物及银颗粒;
(4)将硅基片用去离子水清洗干净后放入质量浓度为10%的HF溶液中浸泡10s去除硅基片表面的自然氧化物,再用去离子水清洗干净,然后用氮气吹干后得到带有纳米线阵列的硅基片备用;
(5)将聚3,4-乙撑二氧噻吩和聚苯乙烯磺酸盐溶液旋涂于带有纳米线阵列的硅基片上,旋涂速率为5000rpm,旋涂时间40s,然后于140℃退火去除溶剂;
(6)将步骤(5)处理后的硅基片分别镀上厚度为10nm的透明导电铜电极作为正极和厚度为100nm的铝电极作为负极得到异质结太阳能电池。
对比例2
(1)将硅基片依次用丙酮和酒精超声震荡后用双氧水与硫酸的混合清洗液加热煮沸10min,其中双氧水与硫酸的体积比为1:3;
(2)将步骤(1)清洗过的硅基片置于填充有HF-AgNO3腐蚀液的高压反应釜中,该HF-AgNO3腐蚀液中HF与AgNO3的摩尔浓度分别为0.1mol/L,高压反应釜密封后放入烘箱中于50℃处理30min;
(3)从高压反应釜中取出硅基片,用去离子水将硅基片表面覆盖的银灰色金属包覆物清洗干净,然后将硅基片置于王水(V(HCl):V(HNO3)=3:1)中加热煮沸2min去除硅基片表面的金属包覆物及银颗粒;
(4)将硅基片用去离子水清洗干净后放入质量浓度为10%的HF溶液中浸泡10s去除硅基片表面的自然氧化物,再用去离子水清洗干净,然后用氮气吹干后得到带有纳米线阵列的硅基片备用;
(5)将带有纳米线阵列的硅基片放入真空镀膜室,将三氧化钼粉作为蒸发源,在带有纳米线阵列的硅基片真空蒸镀一层厚度为50nm的三氧化钼薄膜;
(6)将步骤(5)处理后的硅基片分别镀上厚度为10nm的透明导电铜电极作为正极和厚度为100nm的铝电极作为负极得到MoO3/硅纳米线阵列异质结太阳能电池。
表1实施例1和对比例1-2制得的异质结太阳能电池性能
短路电流(V) | 开路电压(mA/cm2) | 填充因子 | 能量转换效率(%) | 空气中存放一周后能量转换效率(%) | |
实施例1 | 0.53 | 32.64 | 0.58 | 10.03 | 9.87 |
对比例1 | 0.54 | 32.30 | 0.59 | 10.29 | 5.02 |
对比例2 | 0.55 | 33.10 | 0.59 | 10.74 | 10.11 |
以上实施例描述了本发明的基本原理、主要特征及优点,本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明原理的范围下,本发明还会有各种变化和改进,这些变化和改进均落入本发明保护的范围内。
Claims (1)
1.溶液法制备MoO3/硅纳米线阵列异质结太阳能电池的方法,其特征在于具体步骤为:
(1)将硅基片依次用丙酮和酒精超声震荡后用双氧水与硫酸的混合清洗液加热煮沸10min,其中双氧水与硫酸的体积比为1:3;
(2)将步骤(1)清洗过的硅基片置于填充有HF-AgNO3腐蚀液的高压反应釜中,该HF-AgNO3腐蚀液中HF与AgNO3的摩尔浓度分别为0.1mol/L,高压反应釜密封后放入烘箱中于50℃处理30min;
(3)从高压反应釜中取出硅基片,用去离子水将硅基片表面覆盖的银灰色金属包覆物清洗干净,然后将硅基片置于王水中加热煮沸2min去除硅基片表面的金属包覆物及银颗粒;
(4)将硅基片用去离子水清洗干净后放入质量浓度为10%的HF溶液中浸泡10s去除硅基片表面的自然氧化物,再用去离子水清洗干净,然后用氮气吹干后得到带有纳米线阵列的硅基片备用;
(5)将0.2g纯度为99.99%的钼粉、20mL乙醇和0.7mL双氧水置于反应釜中并混合均匀,然后将反应釜密封后于60℃反应20h得到无水氢化三氧化钼,然后真空干燥备用;
(6)将无水氢化三氧化钼溶于去离子水或异丙醇中形成MoO3溶液,将MoO3溶液旋涂于带有纳米线阵列的硅基片上,旋涂速率为5000rpm,旋涂时间40s,然后于140℃退火去除水分或异丙醇溶剂;
(7)将步骤(6)处理后的硅基片分别镀上厚度为10nm的透明导电铜电极作为正极和厚度为100nm的铝电极作为负极得到MoO3/硅纳米线阵列异质结太阳能电池。
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