CN105324857A - 发光元件及其制造方法 - Google Patents

发光元件及其制造方法 Download PDF

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Publication number
CN105324857A
CN105324857A CN201380077701.9A CN201380077701A CN105324857A CN 105324857 A CN105324857 A CN 105324857A CN 201380077701 A CN201380077701 A CN 201380077701A CN 105324857 A CN105324857 A CN 105324857A
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Prior art keywords
semiconductor laminated
laminated piece
substrate
light
emitting component
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CN201380077701.9A
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CN105324857B (zh
Inventor
黄建富
詹耀宁
徐子杰
陈怡名
邱新智
吕志强
许嘉良
张峻贤
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Epistar Corp
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Epistar Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

一种发光元件的制造方法，包括提供第一基板(201)及位于第一基板(201)上的多个半导体叠层块(202，231-235)，多个半导体叠层块(202，231-235)包括第一电性半导体层(202a)、位于第一电性半导体层(202a)上的发光层(202b)，位于发光层(202b)之上的第二电性半导体层(202c)，第一基板(201)还包括分隔道分隔两相邻的半导体叠层块(202，231-235)，并且分隔道的宽度小于10μm，还包括实行第一分离步骤，分离多个半导体叠层块(202，231-235)中的第一半导体叠层块(232，234)与第一基板(201)，第一基板(201)留有第二半导体叠层块(231，233)。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201380077701.9A 2013-07-05 2013-07-05 发光元件的制造方法 Active CN105324857B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811424436.8A CN109802014B (zh) 2013-07-05 2013-07-05 发光元件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2013/078923 WO2015000182A1 (zh) 2013-07-05 2013-07-05 发光元件及其制造方法

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CN105324857B CN105324857B (zh) 2019-01-11

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US (3) US9614127B2 (zh)
JP (1) JP6131388B2 (zh)
KR (2) KR101802837B1 (zh)
CN (2) CN109802014B (zh)
DE (1) DE112013007218T5 (zh)
WO (1) WO2015000182A1 (zh)

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WO2016120400A1 (en) 2015-01-30 2016-08-04 Osram Opto Semiconductors Gmbh Method for producing a semiconductor component and semiconductor component
DE102017117414A1 (de) 2017-08-01 2019-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN109300919B (zh) * 2018-10-15 2020-09-29 上海天马微电子有限公司 Micro LED显示基板及其制作方法、显示装置
DE102019211468A1 (de) 2019-07-31 2021-02-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vertikale verbindungshalbleiter-struktur und verfahren zum herstellen derselbigen
US11670666B2 (en) 2019-10-08 2023-06-06 Luminus, Inc. Light-emitting systems with close-packed LEDs and/or electrically isolated substrates and methods of making and/or operating the same
US11789341B2 (en) 2021-11-08 2023-10-17 Lumileds Llc Dual junction LED with non-overlapping segmentation
KR20240007822A (ko) * 2022-07-07 2024-01-17 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 화소, 및 발광 소자의 제조 방법

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Also Published As

Publication number Publication date
US9614127B2 (en) 2017-04-04
CN105324857B (zh) 2019-01-11
DE112013007218T5 (de) 2016-04-28
KR101802837B1 (ko) 2017-11-29
US10038128B2 (en) 2018-07-31
KR20170089966A (ko) 2017-08-04
WO2015000182A1 (zh) 2015-01-08
US20180006206A1 (en) 2018-01-04
CN109802014B (zh) 2022-05-31
JP6131388B2 (ja) 2017-05-17
US9793458B2 (en) 2017-10-17
US20170170375A1 (en) 2017-06-15
JP2016527714A (ja) 2016-09-08
US20160218247A1 (en) 2016-07-28
CN109802014A (zh) 2019-05-24
KR20160017027A (ko) 2016-02-15
KR101763675B1 (ko) 2017-08-14

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