CN105318985A - Device and method for measuring surface temperature of object through relative strength of reflected light - Google Patents
Device and method for measuring surface temperature of object through relative strength of reflected light Download PDFInfo
- Publication number
- CN105318985A CN105318985A CN201510916533.9A CN201510916533A CN105318985A CN 105318985 A CN105318985 A CN 105318985A CN 201510916533 A CN201510916533 A CN 201510916533A CN 105318985 A CN105318985 A CN 105318985A
- Authority
- CN
- China
- Prior art keywords
- lens
- reflected light
- under test
- object under
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/006—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on microwaves or longer electromagnetic waves, e.g. measuring temperature via microwaves emitted by the object
Abstract
The invention discloses a device and method for measuring the surface temperature of an object through the relative strength of reflected light, relating to an object surface temperature testing method. The device is provided with current sources, an infrared LED light source, lenses, a wave chopper, a spectrograph, a photomultiplier, a phase-locked amplifier, a voltmeter, a computer, a temperature controller and an optical fiber, wherein an objected to be measured is respectively connected with the temperature controller and the second current source; the infrared LED light source is connected with the first current source; the first lens is arranged between the infrared LED light source and the wave chopper; the second lens is arranged above the wave chopper; rays emitted by the infrared LED light source are converged by the first lens, and direct-current rays are changed into alternating-current rays through the wave chopper; the reference signal output end of the wave chopper is connected with the phase-locked amplifier; light collected by the second lens is irradiated on the surface of the objected to be measured; the reflected light is additionally collected and converged through the third lens; the light converged by the third lens is collected by the spectrograph; the spectrograph is connected with the photomultiplier; the photomultiplier is connected with the phase-locked amplifier; the phase-locked amplifier is connected with the voltmeter; and the voltmeter is connected with an input port of the computer.
Description
Technical field
The present invention relates to body surface temperature testing method, especially relate to a kind of device and method by reflected light relative intensity measure body surface temperature.
Background technology
The measuring method of temperature is a lot, can be divided into contact and contactless according to metering system.By the impact of temperature-measurement principle and technology, the temperature-measuring range of contact type thermometric indicator is narrower, and precision is poor.The method of carrying out thermometric according to contactless temperature-measuring ratio juris has infrared thermal imaging technique etc.Infrared imagery technique is the signal of detection means due to blackbody radiation emission.But adopt infrared thermal imaging technique time, due to silicon materials to infrared be transparent, therefore cannot observe; Because the radiation coefficient of metal is very low, the signal to noise ratio (S/N ratio) of test therefore can be caused very low.
The junction temperature test of light emitting diode (LED) is the difficult point of current LED measuring technology, because LED surface is covered with package lens, cannot test by the method for directly contact, the measuring method at present for LED junction temperature mainly contains forward voltage drop method, spectroscopic methodology, blue Bai Bifa, infrared thermography etc.Wherein use the most general method to be forward voltage drop method, the relation utilizing LED both end voltage and temperature linearly to change carries out junction temperature test, but its measuring accuracy is subject to by the restriction of heating big current to test small area analysis switch speed.For the light fixture finished product after encapsulation, due to many restrictions of its lamp outer casing material etc., be generally difficult to realize the drop measurement on each LED pin.Spectroscopic methodology measures LED junction temperature ([1] Y.Xi by peak wavelength with the drift relation of junction temperature, J.Q.Xi, T.Gessmann, J.M.Shah, J.K.Kim, E.F.Schubert, A.J.Fischer, M.H.Crawford, K.H.A.Bogart, andA.A.Allerman, " Junctionandcarriertemperaturemeasurementsindeep-ultravio letlight-emittingdiodesusingthreedifferentmethods, " Appl.Phys.Lett., vol.86, no.3, pp.031907, Jan.2005.).The shortcoming of the method is that spectrum peak wavelength shift is little, causes substantial measurement errors larger.Liu Liming etc. also measure junction temperature ([2] Liu Liming by LED peak wavelength with the relation of Injection Current size variation, the measurement [J] of Zheng Xiao east .LED junction temperature and spectral characteristic relation. photon journal, 2009 (38): 1069-1073.).Blue Bai Bifa belongs to non-contact method, and cardinal principle is the rising along with junction temperature, and the luminescence of chip and the photoluminescence of fluorescent powder decline simultaneously, but the decline of fluorescent powder is rapider, thus the ratio of blue white light in white-light spectrum is changed.The shortcoming of the method is measurement ([3] Y.M.GuandN.Narendran being difficult to realize monochromatic LED junction temperature, " Anon-contactmethodfordeterminingjunctiontemperatureofpho sphor-convertedwhiteLEDs; " inProc.3rdInt.Conf.SolidStateLighting, SanDiego., CA, 2003, vol.5187, pp.107-114.).Lin etc. have studied and measure method ([4] Y.Lin of LED junction temperature based on the centroid wavelength of its definition and halfwidth, Y.L.Gao, Y.J.Lu, L.H.Zhu, Y.ZhangandZ.Chen, " Studyoftemperaturesensitiveopticalparametersandjunctiont emperaturedeterminationoflight-emittingdiodes; " Appl.Phys.Lett., vol.100, pp.202108, May.2012.).These contactless measurements avoid the impact normally worked on equipment, but it exists accuracy of instrument requirement high equally, there is the shortcoming compared with big error.Infrared thermography is the junction temperature distribution measurement method that semiconductor devices is conventional, is difficult to packaged LED the measurement realizing junction temperature.
Summary of the invention
The object of the present invention is to provide a kind of device by reflected light relative intensity measure body surface temperature.
Another object of the present invention is to provide a kind of method by reflected light relative intensity measure body surface temperature.
Device by reflected light relative intensity measure body surface temperature of the present invention is provided with the first current source, infrared LED light source, the first lens, chopper, the second lens, the 3rd lens, spectrometer, photomultiplier, lock-in amplifier, voltage table, computing machine, thermostat, the second current source, optical fiber;
Object under test is connected with thermostat and the second current source respectively, and the second current source provides electric current for object under test, infrared LED light source is connected with the first current source, first lens are located between infrared LED light source and chopper, second lens are located at above chopper, the light that infrared LED light source is dispersed collects and by chopper, direct current light is become interchange light by the first lens, the reference signal of chopper exports termination lock-in amplifier, the collection light of the second lens is irradiated to object under test surface by optical fiber one tunnel, reflected light is collected and is passed through the 3rd lens be located at above spectrometer and converges by another road, the converged light of the 3rd lens collected by spectrometer, the input end of the output termination photomultiplier of spectrometer, the input end of the output termination lock-in amplifier of photomultiplier, the output termination voltage table of lock-in amplifier, the input port of the output terminate computer of voltage table.
The described method by reflected light relative intensity measure body surface temperature, adopts the described device by reflected light relative intensity measure body surface temperature, said method comprising the steps of:
1) select one group lower than the invalid temperature of object under test, be designated as T
0, T
1t
n, then select suitable electric current to be light source power supply;
2) fixed by object under test, the temperature of object under test is maintained T by thermostat
0, by light source igniting, collect the intensity of reflected light of object under test and preserve data;
3) regulate thermostat, the temperature changing thermostat is successively T
1t
n, repetitive operation step 2), obtain the intensity of reflected light under each temperature spot;
4) matching obtains the functional relation of object under test surface temperature and intensity of reflected light;
5) measure object under test intensity of reflected light, substitute into step 4) in functional relation, the surface temperature of object under test instantly can be tried to achieve.
The principle that the present invention utilizes the reflectivity of material to change along with temperature variation carrys out test surfaces Temperature Distribution.Compared with adopting infrared band with infrared thermal imaging technique, advantage of the present invention is to adopt visible ray to test, shorter wavelength can improve the spatial resolution of an order of magnitude, and higher spatial resolution can test the peak temperature of device under test more exactly.And its internal chip temperature can be tested to the LED component of such as transparent enclosure.Utilize lock-in amplifier can also avoid because object under test autoluminescence also improves signal to noise ratio (S/N ratio) greatly to the interference of reflected light in the present invention.
The invention provides a kind of contactless method and measure body surface temperature.Utilize intensity of reflected light with the principle of body surface temperature variation, by light source irradiation object under test, be collected in the reflected light of object during surface temperature difference, obtain the relation of temperature and intensity of reflected light.And then utilize body surface intensity of reflected light under this relation test actual operating conditions, body surface temperature can be obtained.Utilize phase-locked measurement also can avoid because object under test autoluminescence is to the interference of reflected light.The present invention is also applicable to the surface temperature measuring transparent enclosure inside chip.Select the light source of specific wavelength, can realize not raising one's hat test to the encapsulation such as plastics, resin object.
Advantage of the present invention is as follows:
1. non-contact measurement.Little and the object of fragility, such as LED bare chip for surface area, experimental cost has been saved in the danger avoiding direct contact measurement defective chip.
2., as long as object under test can reflection ray, easily heat, the present invention can be adopted to measure body surface temperature, of many uses.The present invention is also applicable to the surface temperature measuring transparent enclosure inside chip, and can avoid because object under test autoluminescence is to the interference of reflected light.
Accompanying drawing explanation
Fig. 1 is the device example structure composition diagram by reflected light relative intensity measure body surface temperature of the present invention.
Fig. 2 is embodiment of the present invention blue-ray LED temperature control-reflected light relative intensity relation curve.
Fig. 3 is electric current-reflected light relative intensity relation curve added by embodiment of the present invention blue-ray LED.
Embodiment
Following examples will the present invention is described in detail by reference to the accompanying drawings: with blue-ray LED bare chip for object under test, red-light LED is excitation source.
See Fig. 1, the device embodiment by reflected light relative intensity measure body surface temperature of the present invention is provided with the first current source 1, infrared LED light source 2, first lens 3, chopper 4, second lens 5, the 3rd lens 6, spectrometer 7, photomultiplier 8, lock-in amplifier 9, voltage table 10, computing machine 11, thermostat 12, second current source 13, optical fiber 15.
Object under test 14 is connected with thermostat 12 and the second current source 13 respectively, and the second current source 13 provides electric current for object under test 14, infrared LED light source 2 is connected with the first current source 1, first lens 3 are located between infrared LED light source 2 and chopper 4, second lens 5 are located at above chopper 4, the light that infrared LED light source 2 is dispersed collects and by chopper 4, direct current light is become interchange light by the first lens 3, the reference signal of chopper 4 exports termination lock-in amplifier 9, the collection light of the second lens 5 is irradiated to object under test 14 surface by optical fiber 15 1 tunnel, reflected light is collected and is passed through the 3rd lens 6 be located at above spectrometer 7 and converges by another road, the converged light of the 3rd lens 6 collected by spectrometer 7, the input end of the output termination photomultiplier 8 of spectrometer 7, the input end of the output termination lock-in amplifier 9 of photomultiplier 8, the output termination voltage table 10 of lock-in amplifier 9, the input port of the output terminate computer 11 of voltage table 10.
The described method by reflected light relative intensity measure body surface temperature, adopts the described device by reflected light relative intensity measure body surface temperature, said method comprising the steps of:
(1) fixed by blue-ray LED bare chip sample, thermostat maintains 30 DEG C, does not light.By two place's red-light LED light source ignitings.Now spectrometer is collected reflectance spectrum and is preserved by computing machine.
(2) regulate thermostat, changing control temperature is successively 40 DEG C, 50 DEG C, 60 DEG C, 70 DEG C, 80 DEG C, repeats step (1), obtains the reflected spectrum data under 30 DEG C, 40 DEG C, 50 DEG C, 60 DEG C, 70 DEG C, 80 DEG C 6 temperature spots.
(3) fitting data obtains the relation of blue-ray LED bare chip sample surface temperature and reflectance spectrum power, and obtains linear functional relation formula.
(4) maintaining thermostat is 30 DEG C, changes the second current source current size, records the reflected light data under blue-ray LED electric current is respectively 0A, 0.3A, 0.6A, 0.9A, 1.2A, 1.5A successively.
(5) intensity reflected light values obtained in step (4) is substituted into respectively in the function obtained in step (3), obtain under each electric current, the surface temperature of blue-ray LED.
(6) temperature of blue-ray LED when electric current is 0A, 0.3A, 0.6A, 0.9A, 1.2A, 1.5A is recorded with thermopair, make comparisons with the temperature calculated in step (5), result is as shown in table 1, from table 1, both are very close, error is less, confirms reliability of the present invention.
Blue-ray LED temperature control-reflected light relative intensity relation curve is see Fig. 2, and electric current added by blue-ray LED-reflected light relative intensity relation curve is see Fig. 3.
Table 1
| Electric current (A) | 0 | 0.3 | 0.6 | 0.9 | 1.2 | 1.5 |
| The temperature (DEG C) that the present invention measures | 30.9 | 49.3 | 72.3 | 82.4 | 96.1 | 110.2 |
| The temperature (DEG C) of thermocouple measurement | 32.5 | 46.5 | 60.0 | 82.1 | 97.1 | 105.0 |
The contrast of the surface temperature that table 1 is obtained by the surface temperature that calculates and thermocouple measurement under different electric current for embodiment of the present invention blue-ray LED.
Claims (2)
1., by the device of reflected light relative intensity measure body surface temperature, it is characterized in that being provided with the first current source, infrared LED light source, the first lens, chopper, the second lens, the 3rd lens, spectrometer, photomultiplier, lock-in amplifier, voltage table, computing machine, thermostat, the second current source, optical fiber;
Object under test is connected with thermostat and the second current source respectively, and the second current source provides electric current for object under test, infrared LED light source is connected with the first current source, first lens are located between infrared LED light source and chopper, second lens are located at above chopper, the light that infrared LED light source is dispersed collects and by chopper, direct current light is become interchange light by the first lens, the reference signal of chopper exports termination lock-in amplifier, the collection light of the second lens is irradiated to object under test surface by optical fiber one tunnel, reflected light is collected and is passed through the 3rd lens be located at above spectrometer and converges by another road, the converged light of the 3rd lens collected by spectrometer, the input end of the output termination photomultiplier of spectrometer, the input end of the output termination lock-in amplifier of photomultiplier, the output termination voltage table of lock-in amplifier, the input port of the output terminate computer of voltage table.
2., by the method for reflected light relative intensity measure body surface temperature, it is characterized in that adopting as claimed in claim 1 by the device of reflected light relative intensity measure body surface temperature, said method comprising the steps of:
1) select one group lower than the invalid temperature of object under test, be designated as T
0, T
1t
n, then select suitable electric current to be light source power supply;
2) fixed by object under test, the temperature of object under test is maintained T by thermostat
0, by light source igniting, collect the intensity of reflected light of object under test and preserve data;
3) regulate thermostat, the temperature changing thermostat is successively T
1t
n, repetitive operation step 2), obtain the intensity of reflected light under each temperature spot;
4) matching obtains the functional relation of object under test surface temperature and intensity of reflected light;
5) measure object under test intensity of reflected light, substitute into step 4) in functional relation, the surface temperature of object under test instantly can be tried to achieve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510916533.9A CN105318985B (en) | 2015-12-10 | 2015-12-10 | A kind of device and method by reflected light relative intensity measure body surface temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510916533.9A CN105318985B (en) | 2015-12-10 | 2015-12-10 | A kind of device and method by reflected light relative intensity measure body surface temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105318985A true CN105318985A (en) | 2016-02-10 |
| CN105318985B CN105318985B (en) | 2018-04-24 |
Family
ID=55246866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510916533.9A Active CN105318985B (en) | 2015-12-10 | 2015-12-10 | A kind of device and method by reflected light relative intensity measure body surface temperature |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105318985B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106872068A (en) * | 2016-12-19 | 2017-06-20 | 中北大学 | The real-time measurement apparatus of surface temperature during a kind of Damage of Optical Film |
| CN106872069A (en) * | 2016-12-19 | 2017-06-20 | 中北大学 | The method for real-time measurement of surface temperature during a kind of Damage of Optical Film |
| CN115291071A (en) * | 2022-08-01 | 2022-11-04 | 厦门大学 | LED array photo-thermal integrated detection device and method based on phase-locked amplifier |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211488A (en) * | 1978-10-03 | 1980-07-08 | Rca Corporation | Optical testing of a semiconductor |
| JP3294206B2 (en) * | 1998-10-13 | 2002-06-24 | 経済産業省産業技術総合研究所長 | Micro-area thermophysical property measurement device |
| US6963816B1 (en) * | 2002-09-04 | 2005-11-08 | The United States Of America As Represented By The United States Department Of Energy | Systems and methods for integrated emissivity and temperature measurement of a surface |
| DE102004053660A1 (en) * | 2004-11-03 | 2006-05-04 | My Optical Systems Gmbh | Object surface`s geometrical property detecting method, involves injecting light of light source in path of rays and detecting geometrical elevation profile of object by spectral and intensity moderate evaluation of rear reflex of source |
| CN101532885A (en) * | 2008-03-10 | 2009-09-16 | 东京毅力科创株式会社 | Temperature measurement apparatus and method |
| JP4429405B2 (en) * | 1998-09-28 | 2010-03-10 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate temperature measuring method |
| CN103175624A (en) * | 2011-12-22 | 2013-06-26 | 中国计量学院 | Non-contact LED junction temperature measurement method and device |
| CN103759853A (en) * | 2011-12-30 | 2014-04-30 | 上海华魏光纤传感技术有限公司 | Probe device of semiconductor optical fiber temperature sensor |
| CN104374489A (en) * | 2014-10-21 | 2015-02-25 | 深圳供电局有限公司 | Semiconductor point type temperature measurement system |
-
2015
- 2015-12-10 CN CN201510916533.9A patent/CN105318985B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211488A (en) * | 1978-10-03 | 1980-07-08 | Rca Corporation | Optical testing of a semiconductor |
| JP4429405B2 (en) * | 1998-09-28 | 2010-03-10 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate temperature measuring method |
| JP3294206B2 (en) * | 1998-10-13 | 2002-06-24 | 経済産業省産業技術総合研究所長 | Micro-area thermophysical property measurement device |
| US6963816B1 (en) * | 2002-09-04 | 2005-11-08 | The United States Of America As Represented By The United States Department Of Energy | Systems and methods for integrated emissivity and temperature measurement of a surface |
| DE102004053660A1 (en) * | 2004-11-03 | 2006-05-04 | My Optical Systems Gmbh | Object surface`s geometrical property detecting method, involves injecting light of light source in path of rays and detecting geometrical elevation profile of object by spectral and intensity moderate evaluation of rear reflex of source |
| CN101532885A (en) * | 2008-03-10 | 2009-09-16 | 东京毅力科创株式会社 | Temperature measurement apparatus and method |
| JP5274862B2 (en) * | 2008-03-10 | 2013-08-28 | 東京エレクトロン株式会社 | Temperature measuring apparatus and temperature measuring method |
| CN103175624A (en) * | 2011-12-22 | 2013-06-26 | 中国计量学院 | Non-contact LED junction temperature measurement method and device |
| CN103759853A (en) * | 2011-12-30 | 2014-04-30 | 上海华魏光纤传感技术有限公司 | Probe device of semiconductor optical fiber temperature sensor |
| CN104374489A (en) * | 2014-10-21 | 2015-02-25 | 深圳供电局有限公司 | Semiconductor point type temperature measurement system |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106872068A (en) * | 2016-12-19 | 2017-06-20 | 中北大学 | The real-time measurement apparatus of surface temperature during a kind of Damage of Optical Film |
| CN106872069A (en) * | 2016-12-19 | 2017-06-20 | 中北大学 | The method for real-time measurement of surface temperature during a kind of Damage of Optical Film |
| CN106872069B (en) * | 2016-12-19 | 2019-06-04 | 中北大学 | The method for real-time measurement of surface temperature during a kind of Damage of Optical Film |
| CN106872068B (en) * | 2016-12-19 | 2019-06-07 | 中北大学 | The real-time measurement apparatus of surface temperature during a kind of Damage of Optical Film |
| CN115291071A (en) * | 2022-08-01 | 2022-11-04 | 厦门大学 | LED array photo-thermal integrated detection device and method based on phase-locked amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105318985B (en) | 2018-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9933376B2 (en) | Apparatus and method for analyzing defects by using heat distribution measurement | |
| CN109060164B (en) | Light-emitting device temperature distribution measuring device and method based on microscopic hyperspectrum | |
| CN103134833B (en) | A kind of material heat transfer analysis device based on fluorescence method | |
| CN105318985A (en) | Device and method for measuring surface temperature of object through relative strength of reflected light | |
| CN105241575A (en) | Intensity ratio temperature measurement method based on broadband fluorescence spectrum | |
| Meola et al. | Measurements of very small temperature variations with LWIR QWIP infrared camera | |
| CN102749141A (en) | Radiation temperature measuring method and apparatus for measuring true target temperature | |
| CN103926517B (en) | The test device and method of power type LED thermal resistance | |
| CN112414561A (en) | High-temperature high-speed thermometer based on colorimetric method | |
| CN104792710A (en) | Object optical property measuring device | |
| Tschudi et al. | Measuring temperatures in the presence of external radiation by flash assisted multiwavelength pyrometry | |
| CN102103085A (en) | Method for measuring boltzmann constant through fluorescence spectrum | |
| Kendig et al. | Thermal imaging of encapsulated LEDs | |
| Martín et al. | Performance of different light sources for the absolute calibration of radiation thermometers | |
| Dilhaire et al. | Thermoreflectance calibration procedure on a laser diode: Application to catastrophic optical facet damage analysis | |
| CN105181131A (en) | Laser power measuring method | |
| RU2610115C1 (en) | Device for determining gas temperature in hollow high-temperature elements of gas turbine engines | |
| CN204924913U (en) | Object optical characteristic measuring device | |
| Tessier et al. | High resolution thermal imaging inside integrated circuits | |
| CN219675840U (en) | Semiconductor heat conductivity coefficient testing device based on pumping detection Raman spectrum | |
| RU2445587C1 (en) | Method of calibrating pulsed pyrometer | |
| Hashemi Jazi | A Contactless Solid Surface Temperature Determination Using Phosphor Thermometry | |
| RU138629U1 (en) | DEVICE FOR CONTROL OF RADIATION SOURCES | |
| CN212779566U (en) | Distribution radiometer | |
| CN104180905A (en) | Infrared temperature measurement method and device for MOCVD process growth |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |