CN105318985B - A kind of device and method by reflected light relative intensity measure body surface temperature - Google Patents
A kind of device and method by reflected light relative intensity measure body surface temperature Download PDFInfo
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- CN105318985B CN105318985B CN201510916533.9A CN201510916533A CN105318985B CN 105318985 B CN105318985 B CN 105318985B CN 201510916533 A CN201510916533 A CN 201510916533A CN 105318985 B CN105318985 B CN 105318985B
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000012360 testing method Methods 0.000 claims abstract description 38
- 239000013307 optical fiber Substances 0.000 claims abstract description 7
- 230000003252 repetitive effect Effects 0.000 claims description 2
- 229940085805 fiberall Drugs 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 15
- 241001025261 Neoraja caerulea Species 0.000 description 11
- 238000001931 thermography Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 241001465382 Physalis alkekengi Species 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/006—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on microwaves or longer electromagnetic waves, e.g. measuring temperature via microwaves emitted by the object
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Abstract
A kind of device and method by reflected light relative intensity measure body surface temperature, is related to body surface temperature testing method.Device is equipped with current source, infrared LED light source, lens, chopper, spectrometer, photomultiplier, lock-in amplifier, voltmeter, computer, thermostat, optical fiber；Object under test is connected with thermostat and the second current source respectively, infrared radiation source is connected with the first current source, first lens are arranged between infrared light supply and chopper, second lens are arranged on above chopper, the light that infrared light supply dissipates is collected and is changed into direct current light by chopper to exchange light by the first lens, the reference signal output termination lock-in amplifier of chopper, the collection illumination of second lens is mapped to object under test surface, separately reflected light is collected and is converged through the 3rd lens, spectrometer collects the converged light of the 3rd lens, spectrometer connects photomultiplier, photomultiplier connects lock-in amplifier, lock-in amplifier connects voltmeter, voltmeter connects computer input port.
Description
Technical field
The present invention relates to body surface temperature testing method, passes through reflected light relative intensity measure thing more particularly, to one kind
The device and method of body surface temperature.
Background technology
The measuring method of temperature is very much, can be divided into contact and contactless according to measurement method.By temperature-measurement principle and
The influence of technology, the temperature-measuring range of contact type thermometric indicator is relatively narrow, and precision is poor.According to the principle of contactless temperature-measuring method into
The method of row thermometric has infrared thermal imaging technique etc..Infrared imagery technique is detection device due to the signal of blackbody radiation emission.
But using infrared thermal imaging technique when, due to silicon materials to it is infrared be it is transparent, can not observe；Due to the radiative chain of metal
Number is very low, therefore the signal-to-noise ratio of test can be caused very low.
The junction temperature test of light emitting diode (LED) is the difficult point of current LED measuring technologies, since LED surface is covered with envelope
Lens are filled, can not be tested with the method directly contacted, mainly have forward voltage drop method, light currently for the measuring method of LED junction temperature
Spectrometry, indigo plant Bai Bifa, infrared thermography etc..It is forward voltage drop method wherein using most common method, utilizes LED both end voltages
Junction temperature test is carried out with the relation that temperature linearly changes, but its measuring accuracy is subject to be cut to test low current by heating high current
The limitation of throw-over degree.It is general to be difficult due to many restrictions of its lamp outer casing material etc. for the lamps and lanterns finished product after encapsulation
Realize the drop measurement on each LED pins.Spectroscopic methodology is to measure LED junction temperature with the drift relation of junction temperature by peak wavelength
([1]Y.Xi,J.Q.Xi,T.Gessmann,J.M.Shah,J.K.Kim,E.F.Schubert,A.J.Fischer,
M.H.Crawford,K.H.A.Bogart,and A.A.Allerman,"Junction and carrier temperature
measurements in deep-ultraviolet light-emitting diodes using three different
methods,"Appl.Phys.Lett.,vol.86,no.3,pp.031907,Jan.2005.).The shortcomings that this method is spectrum
Peak wavelength change is small, causes substantial measurement errors larger.Liu Liming etc. becomes also by LED peak wavelengths with Injection Current size
Change relation measurement junction temperature (measurement [J] photon journals of [2] Liu Liming, Zheng Xiao east .LED junction temperatures and spectral characteristic relation,
2009(38)：1069-1073.).Blue Bai Bifa belongs to non-contact method, and cardinal principle is the rise with junction temperature, chip
Shine and the luminescence generated by light of fluorescent powder declines at the same time, but the decline of fluorescent powder is rapider, so that blue white light in white-light spectrum
Ratio change.The shortcomings that this method is measurement ([3] the Y.M.Gu and for being difficult to realize monochromatic LED junction temperature
N.Narendran,"A non-contact method for determining junction temperature of
phosphor-converted white LEDs,"in Proc.3rd Int.Conf.Solid State Lighting,San
Diego.,CA,2003,vol.5187,pp.107-114.).Lin etc. have studied centroid wavelength and halfwidth based on its definition
To measure the method for LED junction temperature ([4] Y.Lin, Y.L.Gao, Y.J.Lu, L.H.Zhu, Y.Zhang and Z.Chen, " Study
of temperature sensitive optical parameters and junction temperature
determination of light-emitting diodes,”Appl.Phys.Lett.,vol.100,pp.202108,
May.2012.).These contactless measurements avoid the influence to equipment normal work, but it is equally existed to instrument
Required precision is high, and there are the shortcomings that large error.Infrared thermography is the common junction temperature distribution measurement method of semiconductor devices,
The measurement of junction temperature is difficult to realize to packaged LED.
The content of the invention
It is an object of the invention to provide a kind of device by reflected light relative intensity measure body surface temperature.
Another object of the present invention is to provide a kind of method by reflected light relative intensity measure body surface temperature.
Device of the present invention by reflected light relative intensity measure body surface temperature is equipped with the first current source, infrared
LED light source, the first lens, chopper, the second lens, the 3rd lens, spectrometer, photomultiplier, lock-in amplifier, voltage
Table, computer, thermostat, the second current source, optical fiber；
Object under test is connected with thermostat and the second current source respectively, and the second current source provides electric current for object under test；It is red
Outer LED light source is connected with the first current source, and the first lens are arranged between infrared LED light source and chopper, and the second lens are arranged on and cut
Above ripple device, the light that infrared LED light source dissipates is collected and is changed into direct current light by chopper to exchange light by the first lens
Line, the reference signal output termination lock-in amplifier of chopper, the collection light of the second lens is irradiated to be measured all the way by optical fiber
Body surface, another way converge the 3rd lens that reflected light is gathered and passed through being arranged on above spectrometer, and spectrometer collects the 3rd
The converged light of lens, the input terminal of the output termination photomultiplier of spectrometer, the output termination lock of photomultiplier mutually amplify
The input terminal of device, the output termination voltmeter of lock-in amplifier, the input port of the output termination computer of voltmeter.
The method by reflected light relative intensity measure body surface temperature, using described relatively strong by reflected light
The device of degree measurement body surface temperature, the described method comprises the following steps：
1) one group of invalid temperature for being less than object under test is selected, is denoted as T0、T1…TN, the suitable electric current of reselection is light source
Power supply；
2) object under test is fixed, the temperature of object under test is maintained T by thermostat0, light source igniting is collected into be measured
The intensity of reflected light of object simultaneously preserves data；
3) thermostat is adjusted, the temperature for changing thermostat successively is T1…TN, repetitive operation step 2), obtains each temperature
Intensity of reflected light under point；
4) fitting obtains the functional relation of object under test surface temperature and intensity of reflected light；
5) object under test intensity of reflected light is measured, substitutes into the functional relation in step 4), you can try to achieve determinand instantly
The surface temperature of body.
The principle that the present invention is changed using the reflectivity of material with temperature change is come test surfaces Temperature Distribution.With it is red
Outer thermal imaging is compared using infrared band, advantage of the invention is that can be tested using visible ray, shorter ripple
Length can improve the spatial resolution of an order of magnitude, and the spatial resolution of higher can more accurately test device under test
Peak temperature.And its internal chip temperature can be tested to the LED component of such as transparent enclosure.Mutually put using lock in the present invention
Big device can also avoid due to interference of the object under test self-luminous to reflected light and greatly improve signal-to-noise ratio.
The present invention provides a kind of contactless method to measure body surface temperature.Using intensity of reflected light with object table
The principle of face temperature change, irradiates object under test by light source, collects the reflected light of the object when surface temperature is different, obtains temperature
Degree and the relation of intensity of reflected light.And then utilize body surface intensity of reflected light under the relation test actual operating conditions, you can
Obtain body surface temperature.Mutually being measured using lock can also avoid due to interference of the object under test self-luminous to reflected light.The present invention
It is also applied for the surface temperature of measurement transparent enclosure inside chip.Select the light source of specific wavelength, you can realize to plastics, resin
Do not raise one's hat test Deng encapsulation object.
Advantage of the present invention is as follows：
1. non-contact measurement.The small and fragile object for surface area, such as LED bare chips, avoid direct contact
Experimental cost has been saved in the danger of measurement damage chip.
2. as long as object under test can easily be heated with reflection light, you can using present invention measurement body surface temperature, purposes
Extensively.It is suitable for the surface temperature of measurement transparent enclosure inside chip, and can avoid due to object under test self-luminous
Interference to reflected light.
Brief description of the drawings
Fig. 1 is the device embodiment structure composition of the present invention by reflected light relative intensity measure body surface temperature
Figure.
Fig. 2 is blue-ray LED of embodiment of the present invention temperature control-reflected light relative intensity relation curve.
Fig. 3 is electric current added by blue-ray LED of the embodiment of the present invention-reflected light relative intensity relation curve.
Embodiment
Following embodiments will the present invention is described in detail with reference to attached drawing：It is red using blue-ray LED bare chip as object under test
Light LED is excitation source.
Referring to Fig. 1, the device embodiment of the present invention by reflected light relative intensity measure body surface temperature is equipped with
First current source 1, infrared LED light source 2, the first lens 3, chopper 4, the second lens 5, the 3rd lens 6, spectrometer 7, photoelectricity times
Increase pipe 8, lock-in amplifier 9, voltmeter 10, computer 11, thermostat 12, the second current source 13, optical fiber 15.
Object under test 14 is connected with 12 and second current source 13 of thermostat respectively, and the second current source 13 carries for object under test 14
For electric current；Infrared LED light source 2 is connected with the first current source 1, and the first lens 3 are arranged between infrared LED light source 2 and chopper 4,
Second lens 5 are arranged on the top of chopper 4, and the light that infrared LED light source 2 dissipates is collected and will by chopper 4 by the first lens 3
Direct current light is changed into exchanging light, the reference signal output termination lock-in amplifier 9 of chopper 4, and the collection light of the second lens 5 leads to
Cross 15 1 tunnel of optical fiber and be irradiated to 14 surface of object under test, reflected light is gathered and passed through being arranged on the of the top of spectrometer 7 by another way
Three lens 6 converge, and spectrometer 7 collects the converged light of the 3rd lens 6, the input of the output termination photomultiplier 8 of spectrometer 7
End, the input terminal of the output termination lock-in amplifier 9 of photomultiplier 8, the output termination voltmeter 10 of lock-in amplifier 9, electricity
Press the input port of the output termination computer 11 of table 10.
The method by reflected light relative intensity measure body surface temperature, using described relatively strong by reflected light
The device of degree measurement body surface temperature, the described method comprises the following steps：
(1) blue-ray LED bare chip sample is fixed, thermostat maintains 30 DEG C, does not light.By red-light LED light source at two
Light.Spectrometer is collected into reflectance spectrum and is preserved by computer at this time.
(2) thermostat is adjusted, it is 40 DEG C, 50 DEG C, 60 DEG C, 70 DEG C, 80 DEG C to change control temperature successively, repeat step (1),
Obtain 30 DEG C, 40 DEG C, 50 DEG C, 60 DEG C, 70 DEG C, the reflected spectrum data under 80 DEG C of 6 temperature spots.
(3) fitting data obtains the relation of blue-ray LED bare chip sample surface temperature and reflectance spectrum power, and obtains line
Property functional relation.
(4) it is 30 DEG C to maintain thermostat, changes the second current source current size, measures distinguish in blue-ray LED electric current successively
For the reflected light data under 0A, 0.3A, 0.6A, 0.9A, 1.2A, 1.5A.
(5) intensity reflected light values obtained in step (4) are substituted into step (3) respectively in obtained function, obtained
Under each electric current, the surface temperature of blue-ray LED.
(6) temperature of the blue-ray LED when electric current is 0A, 0.3A, 0.6A, 0.9A, 1.2A, 1.5A is measured with thermocouple, with
The temperature being calculated in step (5) is made comparisons, and the results are shown in Table 1, and by table 1 as it can be seen that both are sufficiently close to, error is smaller,
Confirm the reliability of the present invention.
For blue-ray LED temperature control-reflected light relative intensity relation curve referring to Fig. 2, electric current-reflected light added by blue-ray LED is opposite
Strength relationship curve is referring to Fig. 3.
Table 1
| Electric current (A) | 0 | 0.3 | 0.6 | 0.9 | 1.2 | 1.5 |
| The temperature (DEG C) that the present invention measures | 30.9 | 49.3 | 72.3 | 82.4 | 96.1 | 110.2 |
| The temperature (DEG C) of thermocouple measurement | 32.5 | 46.5 | 60.0 | 82.1 | 97.1 | 105.0 |
Table 1 for blue-ray LED of the embodiment of the present invention, with thermocouple survey by the surface temperature obtained by calculation under different electric currents
The contrast of the surface temperature measured.
Claims (2)
1. pass through the device of reflected light relative intensity measure body surface temperature, it is characterised in that equipped with the first current source, infrared
LED light source, the first lens, chopper, the second lens, the 3rd lens, spectrometer, photomultiplier, lock-in amplifier, voltage
Table, computer, thermostat, the second current source, optical fiber；
Object under test is connected with thermostat and the second current source respectively, and the second current source provides electric current for object under test；Infrared LED
Light source is connected with the first current source, and the first lens are arranged between infrared LED light source and chopper, and the second lens are arranged on chopper
The light that infrared LED light source dissipates is collected and is changed into direct current light by chopper to exchange light, copped wave by side, the first lens
The reference signal output termination lock-in amplifier of device, the collection light of the second lens are irradiated to determinand body surface by optical fiber all the way
Face, another way converge the 3rd lens that reflected light is gathered and passed through being arranged on above spectrometer, and spectrometer collects the 3rd lens
Converged light, the input terminal of the output termination photomultiplier of spectrometer, the output of photomultiplier terminate the defeated of lock-in amplifier
Enter end, the output termination voltmeter of lock-in amplifier, the input port of the output termination computer of voltmeter.
2. pass through the method for reflected light relative intensity measure body surface temperature, it is characterised in that using as claimed in claim 1
By the device of reflected light relative intensity measure body surface temperature, the described method comprises the following steps：
1) one group of invalid temperature for being less than object under test is selected, is denoted as T0、T1…TN, the suitable electric current of reselection is light source power supply；
2) object under test is fixed, the temperature of object under test is maintained T by thermostat0, by light source igniting, it is collected into object under test
Intensity of reflected light and preserve data；
3) thermostat is adjusted, the temperature for changing thermostat successively is T1…TN, repetitive operation step 2), obtains under each temperature spot
Intensity of reflected light；
4) fitting obtains the functional relation of object under test surface temperature and intensity of reflected light；
5) object under test intensity of reflected light is measured, substitutes into the functional relation in step 4), you can tries to achieve object under test instantly
Surface temperature.
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| CN201510916533.9A CN105318985B (en) | 2015-12-10 | 2015-12-10 | A kind of device and method by reflected light relative intensity measure body surface temperature |
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| CN105318985B true CN105318985B (en) | 2018-04-24 |
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| CN106872068B (en) * | 2016-12-19 | 2019-06-07 | 中北大学 | The real-time measurement apparatus of surface temperature during a kind of Damage of Optical Film |
| CN106872069B (en) * | 2016-12-19 | 2019-06-04 | 中北大学 | The method for real-time measurement of surface temperature during a kind of Damage of Optical Film |
| CN115291071B (en) * | 2022-08-01 | 2024-05-28 | 厦门大学 | LED array photo-thermal integrated detection device and method based on lock-in amplifier |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211488A (en) * | 1978-10-03 | 1980-07-08 | Rca Corporation | Optical testing of a semiconductor |
| JP3294206B2 (en) * | 1998-10-13 | 2002-06-24 | 経済産業省産業技術総合研究所長 | Micro-area thermophysical property measurement device |
| US6963816B1 (en) * | 2002-09-04 | 2005-11-08 | The United States Of America As Represented By The United States Department Of Energy | Systems and methods for integrated emissivity and temperature measurement of a surface |
| DE102004053660A1 (en) * | 2004-11-03 | 2006-05-04 | My Optical Systems Gmbh | Object surface`s geometrical property detecting method, involves injecting light of light source in path of rays and detecting geometrical elevation profile of object by spectral and intensity moderate evaluation of rear reflex of source |
| CN101532885A (en) * | 2008-03-10 | 2009-09-16 | 东京毅力科创株式会社 | Temperature measurement apparatus and method |
| JP4429405B2 (en) * | 1998-09-28 | 2010-03-10 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate temperature measuring method |
| CN103175624A (en) * | 2011-12-22 | 2013-06-26 | 中国计量学院 | Non-contact LED junction temperature measurement method and device |
| CN103759853A (en) * | 2011-12-30 | 2014-04-30 | 上海华魏光纤传感技术有限公司 | Probe device of semiconductor optical fiber temperature sensor |
| CN104374489A (en) * | 2014-10-21 | 2015-02-25 | 深圳供电局有限公司 | Semiconductor point type temperature measurement system |
-
2015
- 2015-12-10 CN CN201510916533.9A patent/CN105318985B/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211488A (en) * | 1978-10-03 | 1980-07-08 | Rca Corporation | Optical testing of a semiconductor |
| JP4429405B2 (en) * | 1998-09-28 | 2010-03-10 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate temperature measuring method |
| JP3294206B2 (en) * | 1998-10-13 | 2002-06-24 | 経済産業省産業技術総合研究所長 | Micro-area thermophysical property measurement device |
| US6963816B1 (en) * | 2002-09-04 | 2005-11-08 | The United States Of America As Represented By The United States Department Of Energy | Systems and methods for integrated emissivity and temperature measurement of a surface |
| DE102004053660A1 (en) * | 2004-11-03 | 2006-05-04 | My Optical Systems Gmbh | Object surface`s geometrical property detecting method, involves injecting light of light source in path of rays and detecting geometrical elevation profile of object by spectral and intensity moderate evaluation of rear reflex of source |
| CN101532885A (en) * | 2008-03-10 | 2009-09-16 | 东京毅力科创株式会社 | Temperature measurement apparatus and method |
| JP5274862B2 (en) * | 2008-03-10 | 2013-08-28 | 東京エレクトロン株式会社 | Temperature measuring apparatus and temperature measuring method |
| CN103175624A (en) * | 2011-12-22 | 2013-06-26 | 中国计量学院 | Non-contact LED junction temperature measurement method and device |
| CN103759853A (en) * | 2011-12-30 | 2014-04-30 | 上海华魏光纤传感技术有限公司 | Probe device of semiconductor optical fiber temperature sensor |
| CN104374489A (en) * | 2014-10-21 | 2015-02-25 | 深圳供电局有限公司 | Semiconductor point type temperature measurement system |
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