CN103759853A - Probe device of semiconductor optical fiber temperature sensor - Google Patents
Probe device of semiconductor optical fiber temperature sensor Download PDFInfo
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- CN103759853A CN103759853A CN201110459236.8A CN201110459236A CN103759853A CN 103759853 A CN103759853 A CN 103759853A CN 201110459236 A CN201110459236 A CN 201110459236A CN 103759853 A CN103759853 A CN 103759853A
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Abstract
The invention provides a probe device of a semiconductor optical fiber temperature sensor. The probe device includes a conduction optical fiber core, fiber core wrapping layers and ceramic insertion pins which fix the fiber core wrapping layers and the conduction optical fiber core. The probe device is characterized in that one end of the conduction optical fiber core and one end of each fiber core wrapping layer are wrapped and fixed by the ceramic insertion pins; an end surface of the conduction optical fiber core, end surfaces of the fiber core wrapping layers and end surfaces of the ceramic insertion pins are located at the same plane; an optical fiber end surface plated film is plated on the same plane; and the optical fiber end surface plated film can be semiconductor materials such as germanium, gallium arsenide and silicon. According to the probe device of the semiconductor optical fiber temperature sensor of the invention, the optical fiber end surface plated film is plated on conduction optical fiber end surfaces, and therefore, not only can high sensitivity be ensured, but also defects of proneness to external interference and instability which are caused by a situation in which traditional optical fiber end surfaces are bonded with a semiconductor film, can be eliminated, and therefore, a system can have better stability and accuracy, and the performance of the system can be improved.
Description
Technical field
The present invention relates to field of sensing technologies, relate in particular to a kind of probe apparatus of semiconductor fiber temperature sensor, belong to technical field of optical fiber sensing.
Background technology
From in the past most to the improvement of fibre optic temperature sensor and design, scheme has adopted fixedly semiconductor film chip architecture of the bonding semiconductor membrane of fiber end face or fiber end face machinery mostly.The main existence and stability of this structure is poor, precision is low, be subject to the shortcomings such as surrounding environment influence.
In the patent document that one piece of application number that State Intellectual Property Office announces is 200910062879.1, a kind of semiconductor reflection-type optical fiber temperature sensor and sensing device thereof have been announced.This sensor is that a block semiconductor wafer is pressed closer in one end of conduction optical fiber with spring, and a kind of conductor reflection-type optical fiber temperature sensor that is not subject to operation wavelength restriction is provided, and has overcome the shortcoming and defect that prior art exists.
But, because semiconductor wafer and conduction fiber core end face are physical connections under the pressure of spring, the variation because of external environment changes apart from meeting distance and this between the two, thereby cause the light intensity reflecting to change, make temperature-measuring results inaccurate, poor linearity, precision is not high.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of probe apparatus that is not subject to the semiconductor fiber temperature sensor of surrounding environment influence, can improve stability and the accuracy of semiconductor fiber temperature sensor thermometric.
In order to achieve the above object, the present invention adopts a kind of probe apparatus of semiconductor fiber temperature sensor, comprise conduction fiber core, fibre core covering and the fixing ceramic contact pin of fibre core covering and conduction fiber core, it is characterized in that: one end of conduction fiber core and fibre core covering is wrapped by ceramic contact pin, conduction fiber core end face, fibre core covering end face and ceramic contact pin end face at grade, are evenly coated with fiber end face plated film on this same plane.
Utilize ceramic contact pin fixed conducting fiber core, both can protect conduction fiber core, also can expand the end area of conduction fiber core simultaneously, fiber end face plated film can be more firmly plated on conduction fiber core, thereby reduce the difficulty of plated film.
Described fiber end face plated film is that a kind of light intensity can vary with temperature and the temperature sensitive semiconductor material that changes, and its function is cause reflection coefficient to vary with temperature and change, and can be the semiconductor materials such as germanium, gallium arsenide, silicon.
The principle of work of semiconductor fiber temperature sensor is: when lambda1-wavelength one timing, the refractive index of semiconductor material changes along with the variation of temperature, the variation of refractive index can cause the reflectance varies of semiconductor material surface, survey catoptrical intensity, can know the temperature conditions of semiconductor material environment of living in.
In the present invention, by laser instrument, sending laser gets on fiber end face plated film, according to refractive index-temperature physical characteristics of optical semiconductor, the residing environment temperature of fiber end face plated film changes and can cause that semi-conductive refractive index changes, the variation of refractive index causes the variation of reflectivity, thereby the light intensity reflecting that causes being radiated on fiber end face plated film changes, by accepting light intensity that fiber end face coated reflection returns, can reach the object of monitoring probe device temperature of living in.
In the present invention, the thickness of fiber end face plated film can directly affect the performance of sensor, and the design of its thickness realizes by the following method:
In the situation that the use material of not considering fiber end face plated film is as the absorption to incident light such as germanium, gallium arsenide, silicon, making optical fiber and fiber end face plated film interface light intensity reflectivity is R, fiber end face coating film thickness is L, the light intensity of inputting in optical fiber is unit strength 1, according to optical principle, calculate, the light intensity I reflecting is:
According to above formula, can draw temperature one regularly, fiber end face coating film thickness changes, the luminous power cyclical variation reflecting.Regularly, temperature variation, because the refractive index of germanium, gallium arsenide, silicon etc. is also changing, so the luminous power that fiber end face coated reflection is returned is also changing for thickness one.
Temperature one timing, Thickness Variation, the luminous power cyclical variation reflecting (from 0 to 0.6 left and right); Thickness one timing, temperature variation, the luminous power reflecting is also changing.
From above formula analysis: luminous power variation with temperature rate is periodically variable along with the variation of fiber end face coating film thickness, cycle is 200nm left and right, when fiber end face coating film thickness is 200nm and 375nm, the sensitivity of probe apparatus is in the highest position with thickness cyclical variation rate.
Semiconductor optical fibre probe apparatus is put into water, constantly change water temperature, the power reflecting with optical power monitoring optical-fiber probe device record, obtain water temperature-reflective power curve map, by fitting of a polynomial, can obtain more accurately the relational expression of water temperature-reflective power.So, last according to the function after matching, when detecting the performance number that optical-fiber probe device reflects, just can obtain the temperature value that will survey.
Beneficial effect of the present invention is: utilize the method that plates the diaphragm of semiconductor material on conduction fiber end face with coating machine, not only can guarantee that sensitivity is very high, and eliminated the bonding semiconductor membrane of traditional fiber end face and be subject to external disturbance and unsettled defect, make system there is better stability and accuracy, reach the object that improves system performance.
Accompanying drawing explanation
Fig. 1 is cross-sectional view of the present invention.
Fig. 2 is water temperature-reflective power curve map of the present invention.
Embodiment
Below in conjunction with accompanying drawing, further illustrate specific embodiment of the invention step.
A kind of probe apparatus of semiconductor fiber temperature sensor, comprise conduction fiber core 3, fibre core covering 4 and the fixing ceramic contact pin 1 of fibre core covering 4 and conduction fiber core 3, it is characterized in that: one end of conduction fiber core 3 and fibre core covering 4 is wrapped by ceramic contact pin 1, conduction fiber core 3 end faces, fibre core covering 4 end faces and ceramic contact pin 1 end face at grade, are evenly coated with fiber end face plated film 2 on this same plane.
Utilize ceramic contact pin 1 both can protect conduction fiber core 3, also can expand the end area of conduction fiber core 3 simultaneously, fiber end face plated film 2 can be more firmly plated on conduction fiber core 3, thereby reduce the difficulty of plated film.
Described fiber end face plated film 2 is that a kind of light intensity can vary with temperature and the temperature sensitive semiconductor material that changes, and its function is cause reflection coefficient to vary with temperature and change, and can be the semiconductor materials such as germanium, gallium arsenide, silicon.
The principle of work of semiconductor fiber temperature sensor is: when lambda1-wavelength one timing, the refractive index of semiconductor material changes along with the variation of temperature, the variation of refractive index can cause the reflectance varies of semiconductor material surface, survey catoptrical intensity, can know the temperature conditions of semiconductor material environment of living in.
In the present invention, by laser instrument, sending laser gets on fiber end face plated film 2, according to refractive index-temperature physical characteristics of optical semiconductor, the residing environment temperature of fiber end face plated film 2 changes and can cause that semi-conductive refractive index changes, the variation of refractive index causes the variation of reflectivity, thereby the light intensity reflecting that causes being radiated on fiber end face plated film 2 changes, and by accepting light intensity that fiber end face plated film 2 reflects, can reach the object of monitoring probe device temperature of living in.
In the present invention, the thickness of fiber end face plated film 2 can connect the performance that affects sensor, and the design of its thickness realizes by the following method:
In the situation that the use material of not considering fiber end face plated film 2 is as the absorption to incident light such as germanium, gallium arsenide, silicon, making optical fiber and fiber end face plated film 2 interface light intensity reflectivity is R, fiber end face plated film 2 thickness are L, the light intensity of inputting in optical fiber is unit strength 1, according to optical principle, calculate, the light intensity I reflecting is:
According to above formula, can draw temperature one regularly, fiber end face plated film 2 variation in thickness, the luminous power cyclical variation reflecting.Regularly, temperature variation, because the refractive index of germanium, gallium arsenide, silicon etc. is also changing, so the luminous power that fiber end face plated film 2 reflects is also changing for thickness one.
Temperature one timing, Thickness Variation, the luminous power cyclical variation reflecting (from 0 to 0.6 left and right); Thickness one timing, temperature variation, the luminous power reflecting is also changing.
From above formula analysis: luminous power variation with temperature rate is periodically variable along with the variation of fiber end face plated film 2 thickness, cycle is 200nm left and right, when fiber end face plated film 2 thickness are 200nm and 375nm, the sensitivity that is coated with the probe apparatus of fiber end face plated film 2 is in the highest position with thickness cyclical variation rate.
Semiconductor optical fibre probe apparatus is put into water, constantly change water temperature, the power reflecting with optical power monitoring optical-fiber probe device record, obtain water temperature-reflective power curve map, by fitting of a polynomial, can obtain more accurately the relational expression of water temperature-reflective power.So, last according to the function after matching, when detecting the performance number that optical-fiber probe device reflects, just can obtain the temperature value that will survey.
Claims (2)
1. the probe apparatus of a semiconductor fiber temperature sensor, comprise conduction fiber core, fibre core covering and the fixing ceramic contact pin of fibre core covering and conduction fiber core, it is characterized in that: one end of conduction fiber core and fibre core covering is wrapped by ceramic contact pin, conduction fiber core end face, fibre core covering end face and ceramic contact pin end face at grade, are evenly coated with fiber end face plated film on this same plane.
2. the probe apparatus of a kind of semiconductor fiber temperature sensor according to claim 1, is characterized in that: described fiber end face plated film can be germanium, gallium arsenide or silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110459236.8A CN103759853A (en) | 2011-12-30 | 2011-12-30 | Probe device of semiconductor optical fiber temperature sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110459236.8A CN103759853A (en) | 2011-12-30 | 2011-12-30 | Probe device of semiconductor optical fiber temperature sensor |
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| CN103759853A true CN103759853A (en) | 2014-04-30 |
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| CN201110459236.8A Pending CN103759853A (en) | 2011-12-30 | 2011-12-30 | Probe device of semiconductor optical fiber temperature sensor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104374489A (en) * | 2014-10-21 | 2015-02-25 | 深圳供电局有限公司 | Semiconductor point type temperature measurement system |
| CN105318985A (en) * | 2015-12-10 | 2016-02-10 | 厦门大学 | Device and method for measuring surface temperature of object through relative strength of reflected light |
| CN106168511A (en) * | 2016-08-27 | 2016-11-30 | 保定合力达电缆附件有限公司 | A kind of high tension cable connect-disconnect plug with temp sensing function |
| CN113721680A (en) * | 2021-09-01 | 2021-11-30 | 北京京仪自动化装备技术股份有限公司 | Semiconductor temperature control system load simulation method and device and electronic equipment |
-
2011
- 2011-12-30 CN CN201110459236.8A patent/CN103759853A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104374489A (en) * | 2014-10-21 | 2015-02-25 | 深圳供电局有限公司 | Semiconductor point type temperature measurement system |
| CN105318985A (en) * | 2015-12-10 | 2016-02-10 | 厦门大学 | Device and method for measuring surface temperature of object through relative strength of reflected light |
| CN105318985B (en) * | 2015-12-10 | 2018-04-24 | 厦门大学 | A kind of device and method by reflected light relative intensity measure body surface temperature |
| CN106168511A (en) * | 2016-08-27 | 2016-11-30 | 保定合力达电缆附件有限公司 | A kind of high tension cable connect-disconnect plug with temp sensing function |
| CN113721680A (en) * | 2021-09-01 | 2021-11-30 | 北京京仪自动化装备技术股份有限公司 | Semiconductor temperature control system load simulation method and device and electronic equipment |
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Application publication date: 20140430 |