CN106872069A - The method for real-time measurement of surface temperature during a kind of Damage of Optical Film - Google Patents
The method for real-time measurement of surface temperature during a kind of Damage of Optical Film Download PDFInfo
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- CN106872069A CN106872069A CN201611221680.5A CN201611221680A CN106872069A CN 106872069 A CN106872069 A CN 106872069A CN 201611221680 A CN201611221680 A CN 201611221680A CN 106872069 A CN106872069 A CN 106872069A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/006—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on microwaves or longer electromagnetic waves, e.g. measuring temperature via microwaves emitted by the object
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- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The present invention provides a kind of method for real-time measurement of surface temperature during Damage of Optical Film, and step is：(1) light path, is adjusted：So that wavelength is λ1Laser irradiate on testing sample；(2), by the mobile adjustment structure of lens, wavelength is made to be λ1Laser irradiation have suitable spot size on testing sample；(3) measurement of ps pulsed laser and ns pulsed laser induced optical thin film damage, is carried out：Startup first laser device, second laser, mobile platform, energy meter and CCD damage judgment means and judge whether testing sample occurs damaging online；(4) measurement of surface temperature in damage process, is carried out：CCD damages judgment means online, starts the 3rd laser, makes wavelength be λ3Exploring laser light and wavelength be λ1Main laser there is certain angle to irradiate on testing sample, two Si avalanche photodiode detectors and oscillograph are adjusted simultaneously, the heat reflection signal on record testing sample surface, to determine temperature change of the sample surfaces during damage and failure under main laser irradiation.
Description
Technical field
The present invention relates to the damage from laser field of measuring technique of optical thin film, and in particular to a kind of ps pulsed laser and ns pulsed laser induction
The method for real-time measurement of surface temperature during Damage of Optical Film.
Background technology
The damage of optical thin film governs the development of superpower laser always for many years, studies the detection of thin film damage,
It is the key point for solving the above problems to provide a good measuring method.
The research of optical thin film damage from laser mechanism is the basis for preparing high quality optical film, and only understands light in depth
Learn its light during thin film damage, heat, force characteristic change could profound understanding its Laser Induced Damage mechanism.And fire damage is
The main damage process of ps pulsed laser and ns pulsed laser induced optical film, so during ps pulsed laser and ns pulsed laser induced optical thin film damage
The real-time measurement of surface temperature is very important.
Detection to surface temperature during laser induced optical thin film damage at present does not have direct measuring method.Mostly
Several measurements is all a kind of measurement indirectly, typically all by measuring absorption size of the optical thin film in the case where laser is irradiated, then
Think that the luminous energy for absorbing is converted into heat energy and is changed accordingly come the anti-surface temperature that solves by heat transfer theory again, and this absorption
Measurement be usually optical thin film under induced with laser without damage, once because optical thin film is damaged, its absorption can show
Writing increase may improve several magnitudes, so proposing limitation to this measuring method.
The content of the invention
During ps pulsed laser and ns pulsed laser induced optical thin film damage can in real time being measured it is an object of the invention to provide one kind
The temperature on surface, the laser induced optical of experimental basis is provided for the determination of ps pulsed laser and ns pulsed laser induced optical thin film damage mechanism
The method for real-time measurement of surface temperature during thin film damage.
In order to solve the problems existing in background technology, the present invention is to use following technical scheme：A kind of optical thin film is damaged
The method for real-time measurement of surface temperature during wound, the measurement apparatus being related to are λ comprising output wavelength1First laser device, use
Laser system in the second laser of collimated light path assistance monitoring damage and failure and for detecting the 3rd laser of light path,
One is located at by the testing sample on the mobile platform of computer controls, and the CCD for judging to damage damages judgment means online
And two Si avalanche photodiode detectors and an oscillograph of measurement heat reflection signal；In described first laser device
45 degree of turning mirrors one, laser energy attenuator, 45 degree of turning mirrors two, spectroscope and lens are set gradually in the light path of output,
Wavelength is λ1First laser irradiate in the testing sample on mobile platform, set on described spectroscopical reflected light path
Energy meter is put, for measuring wavelength for λ1First laser device energy；Set on the 3rd described laser output light path
Detection light beam, is divided into two beams by beam splitter, and 45 degree of turnover light paths of turning mirror three of a branch of setting set on the reflected light path of beam splitter
The energy of exploring laser light of the measurement reflection of Si avalanche photodiode detectors two is put to monitor the steady of exploring laser light output laser
It is qualitative；Another beam is reflected on testing sample by speculum, and the transient heat reflected signal on testing sample surface is by Si snowslide light
Electric diode detector one is measured, and by oscillograph recording, oscillograph is connected by data wire with serial ports of computers, specific to survey
Amount method and step：
(1) light path, is adjusted：Rational regulation 45 degree of turning mirrors, one, 45 degree of turning mirrors two, and the position of lens causes ripple
A length of λ1Laser irradiate on testing sample；
(2), by the mobile adjustment structure of lens, adjustment lens position makes wavelength be λ1Laser irradiate in testing sample
On have suitable spot size；
(3) measurement of ps pulsed laser and ns pulsed laser induced optical thin film damage, is carried out：Start first laser device, second laser,
Mobile platform, energy meter and CCD damage judgment means online, and the energy density for setting first laser device is fixed value, by institute
The CCD for stating damages judgment means and judges whether testing sample occurs damaging online, if damaging does not occur in testing sample, increases
Plus the energy density of first laser device, until sample starts damage occur；
(4) measurement of surface temperature in damage process, is carried out：CCD damages judgment means online, starts the 3rd laser,
Adjustment detection light path, makes wavelength be λ3Exploring laser light and wavelength be λ1Main laser there is certain angle to irradiate in testing sample
On, while adjusting two Si avalanche photodiode detectors and oscillograph, the heat reflection signal on record testing sample surface shows
The sample surfaces under main laser different laser energy density of the detection of ripple device real time record Si avalanche photodiode detectors one
Heat reflection signal, and data are transferred to computer, Si avalanche photodiode detectors two carry out monitor in real time detection light beam
Stability；If the signal intensity that a certain moment Si avalanche photodiode detectors one are obtained is S, the corresponding work(of detection light beam
Rate is P, then according to formula：Can determine that sample surfaces damage and failure mistake under main laser irradiation
Temperature change in journey.
Principle of the invention is as follows：
In laser irradiation process, the temperature of film surface will change, and the reflectivity of film surface can be with table
The change of face temperature and change, the present invention measure film surface by measuring the relative changes delta R of film surface reflectivity
Change in temperature Δ T, that is, have：Wherein κ is the hot reflection coefficient of film.
After adopting the above technical scheme, the invention has the advantages that：
Surface temperature during ps pulsed laser and ns pulsed laser induced optical thin film damage can fast and effectively be measured using the technology
Degree, for the determination of ps pulsed laser and ns pulsed laser induced optical thin film damage mechanism provides experimental basis.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structure drawing of device that embodiment provided by the present invention is damaged under judgement state；
Fig. 2 is the real-time measurement apparatus structure chart of surface temperature in embodiment damage process provided by the present invention；
Reference：
1- first laser devices；2- second lasers；The lasers of 3- the 3rd；4-45 degree turning mirror one；5- speculums one；6- points
Light microscopic；7- energy meters；8- speculums two；9- speculums three；10-45 degree turning mirror two；11- speculums four；12- laser energies decline
Subtract device；13-Si avalanche photodiode detectors one；14- testing samples；15- plus lens；16- computers；17- oscillographs；
18-CCD damages judgment means online；19- mobile platforms；20-Si avalanche photodiode detectors two；21- beam splitters.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with accompanying drawing and specific implementation
Mode, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used to explain this
Invention, is not intended to limit the present invention.
Fig. 1 is referred to, this specific embodiment uses following technical scheme：Surface temperature during a kind of Damage of Optical Film
The real-time measurement apparatus and method of degree, when ps pulsed laser and ns pulsed laser induced optical thin film damage judges, measurement apparatus are by exporting
Wavelength is λ1First laser device 1, for collimated light path assist monitoring damage and failure second laser 2, one judge damage
CCD damage judgment means 18 online.Set gradually in the light path that described first laser device 1 is exported 45 degree of turning mirrors 1,
Laser energy attenuator 12,45 degree of turning mirrors 2 10, spectroscope 6 and plus lens 15, wavelength is λ1First laser by converge
Poly- lens 15 are irradiated on described testing sample 14, and testing sample 14 is placed on two stepper motor mobile platforms 19,
Energy meter 7 is set on the reflected light path of spectroscope 6, for measuring wavelength for λ1Laser energy；
CCD is set in the space surface of described testing sample 14 and damages judgment means 18, described first laser online
Device 1, second laser 2, CCD are damaged judgment means 18, mobile platform 19 and are connected with the serial ports of computer 16 by order wire online.
Described laser energy attenuator 12 is made up of rotatable half way up the mountain piece and attenuator, and being controlled by computer 16 can be with
Regulation is irradiated to the beam energy of sample surfaces.
Fig. 2 is referred to, during ps pulsed laser and ns pulsed laser induced optical thin film damage during the real-time measurement of surface temperature, device
It is λ including output wavelength1First laser device 1, for collimated light path assist monitoring damage and failure second laser 2, be used for
The 3rd laser 3 of heat reflection signal is measured, one is located at the testing sample 14 being placed on mobile platform 19, Si avalanche optoelectronics
Diode detector 1, Si avalanche photodiode detectors 2 20 and an oscillograph 17；
It is λ in described wavelength3Exploring laser light and main laser there is certain angle to irradiate on testing sample 14, point
The energy that Si avalanche photodiode detectors 2 20 measure the exploring laser light of reflection is set on the reflected light path of beam mirror 21, to supervise
Control exploring laser light exports the stability of laser.Si avalanche photodiode detectors one are set on the transmitted light path of beam splitter 21
13 and an oscillograph 17, the heat reflection signal on record testing sample 14 surface, oscillograph 17 is by order wire and computer 16
Serial ports is connected.
In an embodiment of the present invention, first laser device 1 is Nd：YAG laser, using electric-optically Q-switched, output wavelength is
The basement membrane laser of 1064nm, the laser is adjusted via the speculum 1 of 45 degree of placement, then is focused on by a plus lens 15
The surface of testing sample 14, while test section of the planar stepping motor mobile platform 19 controlled by computer 16 to testing sample 14
Domain is accurately positioned, and the precision of its single step movement is 5 μm.In measurement process CCD damage judgment means 18 online must be right
Quasi- damage measurement point, and rely on the hair that the He-Ne laser of second laser 2 judges to damage in the scattering on the surface of testing sample 14
It is raw.
In an embodiment of the present invention, the 3rd laser 3 is the continuous wave laser of output wavelength 639nm.The laser is through beam splitting
Mirror 21 is divided into two beam laser, and a branch of speculum 28 through certain angle is mapped to the surface of testing sample 14, by testing sample
The transient reflection signal on 14 surfaces reflexes to Si avalanche photodiode detectors one through another symmetrically placed speculum 39
13, another beam injects Si avalanche photodiode detectors 2 20 to supervise after being adjusted by the speculum 4 11 of 45 degree of placements
The stability of control detection light beam.
Testing sample 14 is in the embodiment, the testing sample 14 using electron-beam evaporation mode prepare, use material for
High-index material and low-index material, the testing sample are up to 99.99% in the reflectivity of the central wavelength of 1064nm.
The measurement process of the present embodiment is：
Testing sample 14 is placed on mobile platform 19 first, then by the control 1064nm laser optical paths of computer 16
The anglec of rotation of half-wave plate of laser energy attenuator 12 control the output energy of laser, according to the test of ISO11254-1
Standard, i.e., often measuring a point and change a position, and damage judgment means 18 online using CCD carries out the judgement of online damage.
After wavelength is adjusted according to the method described above for the continuous laser of 639nm, the detection of the real time record Si avalanche photodides of oscillograph 17
Device 1 detects the heat reflection signal of sample surfaces, and data are transferred to computer 16, Si avalanche photodiode detectors
2 20 carry out the stability that monitor in real time detects light beam.If the signal that a certain moment Si avalanche photodiode detectors 1 are obtained
Intensity is S, and the corresponding power of detection light beam is P, then according to formula： Can determine that sample surfaces
Temperature change.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be in other specific forms realized.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires to be limited rather than described above, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as the claim involved by limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each implementation method is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only that for clarity, those skilled in the art should
Specification an as entirety, the technical scheme in each embodiment can also be formed into those skilled in the art through appropriately combined
May be appreciated other embodiment.
Claims (1)
1. during a kind of Damage of Optical Film surface temperature method for real-time measurement, it is characterised in that：The real-time measurement being related to
Device is λ comprising output wavelength1First laser device, for collimated light path assist monitoring damage and failure second laser and
Laser system for detecting the 3rd laser of light path, one be located at treat test sample by the mobile platform of computer controls
Product, the CCD for judging to damage damages two Si avalanche photodides of judgment means and measurement heat reflection signal online
Detector and an oscillograph；45 degree of turning mirrors one, laser energy are set gradually in the light path that described first laser device is exported
Amount attenuator, 45 degree of turning mirrors two, spectroscope and lens, wavelength is λ1First laser irradiate on mobile platform
Testing sample, energy meter is set on described spectroscopical reflected light path, for measuring wavelength for λ1First laser device
Energy；Beam splitter is set on the 3rd described laser output light path, detection light beam is divided into two beams, 45 degree of a branch of setting turns
The turnover light path of fold mirror three, sets the detection that Si avalanche photodiode detectors two measure reflection on the reflected light path of beam splitter
The energy of laser with monitor exploring laser light export laser stability；Another beam is reflected on testing sample by speculum, is treated
The transient heat reflected signal for surveying sample surfaces is measured by Si avalanche photodiode detectors one, and by oscillograph recording, oscillography
Device is connected by data wire with serial ports of computers, is comprised the following steps that：
(1) light path, is adjusted：Rational regulation 45 degree of turning mirrors, one, 45 degree of turning mirrors two, and the position of lens causes that wavelength is
λ1Laser irradiate on testing sample；
(2), by the mobile adjustment structure of lens, adjustment lens position makes wavelength be λ1Laser irradiation have on testing sample
Suitable spot size；
(3) measurement of ps pulsed laser and ns pulsed laser induced optical thin film damage, is carried out：Start first laser device, second laser, movement
Platform, energy meter and CCD damage judgment means online, and the energy density for setting first laser device is fixed value, by described
CCD damages judgment means and judges whether testing sample occurs damaging online, if damaging does not occur in testing sample, increases by the
The energy density of one laser, until sample starts damage occur；
(4) measurement of surface temperature in damage process, is carried out：CCD damages judgment means online, starts the 3rd laser, adjustment
Detection light path, makes wavelength be λ3Exploring laser light and wavelength be λ1Main laser there is certain angle to irradiate on testing sample, together
When adjust two Si avalanche photodiode detectors and oscillograph, the heat reflection signal on record testing sample surface, oscillograph
The heat of sample surfaces under main laser different laser energy density of the detection of real time record Si avalanche photodiode detectors one
Reflected signal, and data are transferred to computer, Si avalanche photodiode detectors two carry out the steady of monitor in real time detection light beam
It is qualitative；If the signal intensity that a certain moment Si avalanche photodiode detectors one are obtained is S, the corresponding power of detection light beam is
P, then according to formula：Can determine that sample surfaces during damage and failure under main laser irradiation
Temperature change.
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| CN201611221680.5A CN106872069B (en) | 2016-12-19 | 2016-12-19 | The method for real-time measurement of surface temperature during a kind of Damage of Optical Film |
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| CN201611221680.5A CN106872069B (en) | 2016-12-19 | 2016-12-19 | The method for real-time measurement of surface temperature during a kind of Damage of Optical Film |
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| CN106872069B CN106872069B (en) | 2019-06-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112097950A (en) * | 2020-08-21 | 2020-12-18 | 中国电子科技集团公司第十三研究所 | Temperature measuring method and device based on photothermal reflection and terminal equipment |
| CN112782129A (en) * | 2020-12-29 | 2021-05-11 | 苏州创鑫激光科技有限公司 | Optical film testing method and testing equipment |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007147301A (en) * | 2005-11-24 | 2007-06-14 | National Institute Of Advanced Industrial & Technology | Temperature measuring device of minute region |
| CN101718712A (en) * | 2009-12-02 | 2010-06-02 | 西安工业大学 | Combined testing device and testing method of laser damage thresholds of film and optical element |
| CN101865729A (en) * | 2009-04-15 | 2010-10-20 | 中国科学院半导体研究所 | Method for measuring cavity surface temperature of semiconductor laser |
| CN102062647A (en) * | 2010-11-24 | 2011-05-18 | 中国科学院半导体研究所 | Testing system for measuring temperature of cavity surface of semiconductor laser |
| CN102507040A (en) * | 2011-11-10 | 2012-06-20 | 复旦大学 | Thin film temperature measurement method based on ellipsometer |
| CN102608019A (en) * | 2012-03-23 | 2012-07-25 | 中国矿业大学 | Device and method for measuring laser irradiation optical thin film damage threshold in high-temperature environment |
| CN103162941A (en) * | 2013-03-01 | 2013-06-19 | 长春理工大学 | Testing device for laser damage threshold value of surfaces of optical thin film and photoelectric device |
| CN105318985A (en) * | 2015-12-10 | 2016-02-10 | 厦门大学 | Device and method for measuring surface temperature of object through relative strength of reflected light |
| CN105865651A (en) * | 2016-06-20 | 2016-08-17 | 中国工程物理研究院流体物理研究所 | System and method for measuring temperature of material under dynamic high-pressure loading on basis of reflectivity |
-
2016
- 2016-12-19 CN CN201611221680.5A patent/CN106872069B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007147301A (en) * | 2005-11-24 | 2007-06-14 | National Institute Of Advanced Industrial & Technology | Temperature measuring device of minute region |
| CN101865729A (en) * | 2009-04-15 | 2010-10-20 | 中国科学院半导体研究所 | Method for measuring cavity surface temperature of semiconductor laser |
| CN101718712A (en) * | 2009-12-02 | 2010-06-02 | 西安工业大学 | Combined testing device and testing method of laser damage thresholds of film and optical element |
| CN102062647A (en) * | 2010-11-24 | 2011-05-18 | 中国科学院半导体研究所 | Testing system for measuring temperature of cavity surface of semiconductor laser |
| CN102507040A (en) * | 2011-11-10 | 2012-06-20 | 复旦大学 | Thin film temperature measurement method based on ellipsometer |
| CN102608019A (en) * | 2012-03-23 | 2012-07-25 | 中国矿业大学 | Device and method for measuring laser irradiation optical thin film damage threshold in high-temperature environment |
| CN103162941A (en) * | 2013-03-01 | 2013-06-19 | 长春理工大学 | Testing device for laser damage threshold value of surfaces of optical thin film and photoelectric device |
| CN105318985A (en) * | 2015-12-10 | 2016-02-10 | 厦门大学 | Device and method for measuring surface temperature of object through relative strength of reflected light |
| CN105865651A (en) * | 2016-06-20 | 2016-08-17 | 中国工程物理研究院流体物理研究所 | System and method for measuring temperature of material under dynamic high-pressure loading on basis of reflectivity |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112097950A (en) * | 2020-08-21 | 2020-12-18 | 中国电子科技集团公司第十三研究所 | Temperature measuring method and device based on photothermal reflection and terminal equipment |
| CN112782129A (en) * | 2020-12-29 | 2021-05-11 | 苏州创鑫激光科技有限公司 | Optical film testing method and testing equipment |
| CN112782129B (en) * | 2020-12-29 | 2023-08-08 | 苏州创鑫激光科技有限公司 | Optical film testing method and testing equipment |
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