CN105308860B - 先进热补偿表面声波器件及其制造方法 - Google Patents

先进热补偿表面声波器件及其制造方法 Download PDF

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Publication number
CN105308860B
CN105308860B CN201480020179.5A CN201480020179A CN105308860B CN 105308860 B CN105308860 B CN 105308860B CN 201480020179 A CN201480020179 A CN 201480020179A CN 105308860 B CN105308860 B CN 105308860B
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China
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dielectric
dielectric layer
metallization
piezoelectric
layer
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CN201480020179.5A
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Chinese (zh)
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CN105308860A (zh
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C·辛克
E·德博内
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN201480020179.5A 2013-04-08 2014-03-21 先进热补偿表面声波器件及其制造方法 Active CN105308860B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR13/00824 2013-04-08
FR1300824A FR3004289B1 (fr) 2013-04-08 2013-04-08 Composant a ondes acoustiques de surface et sa methode de fabrication
PCT/EP2014/055746 WO2014166722A1 (en) 2013-04-08 2014-03-21 Advanced thermally compensated surface acoustic wave device and fabrication method

Publications (2)

Publication Number Publication Date
CN105308860A CN105308860A (zh) 2016-02-03
CN105308860B true CN105308860B (zh) 2018-07-13

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CN201480020179.5A Active CN105308860B (zh) 2013-04-08 2014-03-21 先进热补偿表面声波器件及其制造方法

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US (1) US10270413B2 (enExample)
EP (1) EP2984754B1 (enExample)
JP (1) JP6619327B2 (enExample)
KR (1) KR102184208B1 (enExample)
CN (1) CN105308860B (enExample)
FR (1) FR3004289B1 (enExample)
WO (1) WO2014166722A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11158783B2 (en) 2015-10-13 2021-10-26 Northeastern University Piezoelectric cross-sectional Lamé mode transformer
CN107302348A (zh) * 2016-04-15 2017-10-27 上海新昇半导体科技有限公司 表面声波器件及其制造方法、温度检测设备
FR3051785B1 (fr) * 2016-05-25 2025-04-25 Soitec Silicon On Insulator Procede de fabrication d'une couche
FR3052298B1 (fr) * 2016-06-02 2018-07-13 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
CN106209003B (zh) * 2016-07-06 2019-03-22 中国科学院上海微系统与信息技术研究所 利用薄膜转移技术制备薄膜体声波器件的方法
JP7169083B2 (ja) * 2018-04-04 2022-11-10 太陽誘電株式会社 弾性波デバイスおよびマルチプレクサ
US20200044621A1 (en) * 2018-07-31 2020-02-06 Qualcomm Incorporated Thin film devices
US11804822B2 (en) 2019-10-23 2023-10-31 Skyworks Solutions, Inc. Surface acoustic wave resonator with reduced frequency shift
CN112448687B (zh) * 2020-11-23 2024-05-03 广东广纳芯科技有限公司 一种tc-saw滤波器制造方法
KR20230103296A (ko) * 2021-12-31 2023-07-07 삼성전기주식회사 음향 공진기 패키지
US20250323620A1 (en) * 2024-04-10 2025-10-16 Rf360 Singapore Pte. Ltd. Surface acoustic wave (saw) device with high-dielectric-constant material

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CN1926763A (zh) * 2004-03-05 2007-03-07 株式会社村田制作所 边界声波器件
CN102460968A (zh) * 2009-06-19 2012-05-16 高通股份有限公司 可调谐微机电系统共振器

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JP3702050B2 (ja) 1996-09-09 2005-10-05 株式会社東芝 弾性境界波デバイス
JPH11284162A (ja) 1998-03-30 1999-10-15 Sony Corp 固体撮像素子
JP3832214B2 (ja) * 2000-09-08 2006-10-11 セイコーエプソン株式会社 Ｓａｗ素子及びその製造方法
WO2002082644A1 (fr) * 2001-03-30 2002-10-17 Mitsubishi Denki Kabushiki Kaisha Dispositif d'onde acoustique et procede de fabrication correspondant
JP2004297693A (ja) * 2003-03-28 2004-10-21 Fujitsu Media Device Kk 弾性表面波デバイスの製造方法及び弾性表面波デバイス
JP2005206576A (ja) 2003-10-09 2005-08-04 Unitika Ltd ハナビラタケ由来のセラミド含有組成物
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JP5637068B2 (ja) * 2010-08-27 2014-12-10 株式会社村田製作所 弾性境界波装置の製造方法および弾性境界波装置
JPWO2013031651A1 (ja) 2011-09-02 2015-03-23 株式会社村田製作所 弾性波装置及びその製造方法

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US20040104640A1 (en) * 2001-12-17 2004-06-03 Intel Corporation Structure to achieve high-Q and low insertion loss film bulk acoustic resonators
CN1926763A (zh) * 2004-03-05 2007-03-07 株式会社村田制作所 边界声波器件
CN102460968A (zh) * 2009-06-19 2012-05-16 高通股份有限公司 可调谐微机电系统共振器

Also Published As

Publication number Publication date
CN105308860A (zh) 2016-02-03
KR102184208B1 (ko) 2020-11-27
JP6619327B2 (ja) 2019-12-11
EP2984754B1 (en) 2019-08-28
FR3004289B1 (fr) 2015-05-15
EP2984754A1 (en) 2016-02-17
KR20150139856A (ko) 2015-12-14
US10270413B2 (en) 2019-04-23
JP2016519897A (ja) 2016-07-07
US20160065162A1 (en) 2016-03-03
WO2014166722A1 (en) 2014-10-16
FR3004289A1 (fr) 2014-10-10

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