KR102184208B1 - 진보되고 열적으로 보상된 표면 탄성파 소자 및 제조 방법 - Google Patents

진보되고 열적으로 보상된 표면 탄성파 소자 및 제조 방법 Download PDF

Info

Publication number
KR102184208B1
KR102184208B1 KR1020157028039A KR20157028039A KR102184208B1 KR 102184208 B1 KR102184208 B1 KR 102184208B1 KR 1020157028039 A KR1020157028039 A KR 1020157028039A KR 20157028039 A KR20157028039 A KR 20157028039A KR 102184208 B1 KR102184208 B1 KR 102184208B1
Authority
KR
South Korea
Prior art keywords
dielectric layer
dielectric
acoustic wave
manufacturing
surface acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157028039A
Other languages
English (en)
Korean (ko)
Other versions
KR20150139856A (ko
Inventor
크리스토프 징크
에릭 데보네
Original Assignee
소이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소이텍 filed Critical 소이텍
Publication of KR20150139856A publication Critical patent/KR20150139856A/ko
Application granted granted Critical
Publication of KR102184208B1 publication Critical patent/KR102184208B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H01L41/113—
    • H01L41/22—
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR1020157028039A 2013-04-08 2014-03-21 진보되고 열적으로 보상된 표면 탄성파 소자 및 제조 방법 Active KR102184208B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR13/00824 2013-04-08
FR1300824A FR3004289B1 (fr) 2013-04-08 2013-04-08 Composant a ondes acoustiques de surface et sa methode de fabrication
PCT/EP2014/055746 WO2014166722A1 (en) 2013-04-08 2014-03-21 Advanced thermally compensated surface acoustic wave device and fabrication method

Publications (2)

Publication Number Publication Date
KR20150139856A KR20150139856A (ko) 2015-12-14
KR102184208B1 true KR102184208B1 (ko) 2020-11-27

Family

ID=48771526

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157028039A Active KR102184208B1 (ko) 2013-04-08 2014-03-21 진보되고 열적으로 보상된 표면 탄성파 소자 및 제조 방법

Country Status (7)

Country Link
US (1) US10270413B2 (enExample)
EP (1) EP2984754B1 (enExample)
JP (1) JP6619327B2 (enExample)
KR (1) KR102184208B1 (enExample)
CN (1) CN105308860B (enExample)
FR (1) FR3004289B1 (enExample)
WO (1) WO2014166722A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11158783B2 (en) 2015-10-13 2021-10-26 Northeastern University Piezoelectric cross-sectional Lamé mode transformer
CN107302348A (zh) * 2016-04-15 2017-10-27 上海新昇半导体科技有限公司 表面声波器件及其制造方法、温度检测设备
FR3051785B1 (fr) * 2016-05-25 2025-04-25 Soitec Silicon On Insulator Procede de fabrication d'une couche
FR3052298B1 (fr) * 2016-06-02 2018-07-13 Soitec Structure hybride pour dispositif a ondes acoustiques de surface
CN106209003B (zh) * 2016-07-06 2019-03-22 中国科学院上海微系统与信息技术研究所 利用薄膜转移技术制备薄膜体声波器件的方法
JP7169083B2 (ja) * 2018-04-04 2022-11-10 太陽誘電株式会社 弾性波デバイスおよびマルチプレクサ
US20200044621A1 (en) * 2018-07-31 2020-02-06 Qualcomm Incorporated Thin film devices
US11804822B2 (en) 2019-10-23 2023-10-31 Skyworks Solutions, Inc. Surface acoustic wave resonator with reduced frequency shift
CN112448687B (zh) * 2020-11-23 2024-05-03 广东广纳芯科技有限公司 一种tc-saw滤波器制造方法
KR20230103296A (ko) * 2021-12-31 2023-07-07 삼성전기주식회사 음향 공진기 패키지
US20250323620A1 (en) * 2024-04-10 2025-10-16 Rf360 Singapore Pte. Ltd. Surface acoustic wave (saw) device with high-dielectric-constant material

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996004713A1 (en) * 1994-08-05 1996-02-15 Japan Energy Corporation Surface acoustic wave device and production method thereof
WO2002082645A1 (fr) * 2001-03-30 2002-10-17 Mitsubishi Denki Kabushiki Kaisha Element onde elastique et procede de production
JP2004297693A (ja) * 2003-03-28 2004-10-21 Fujitsu Media Device Kk 弾性表面波デバイスの製造方法及び弾性表面波デバイス
JP2007049482A (ja) * 2005-08-10 2007-02-22 Seiko Epson Corp 弾性境界波素子
WO2013031651A1 (ja) * 2011-09-02 2013-03-07 株式会社村田製作所 弾性波装置及びその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3702050B2 (ja) 1996-09-09 2005-10-05 株式会社東芝 弾性境界波デバイス
JPH11284162A (ja) 1998-03-30 1999-10-15 Sony Corp 固体撮像素子
JP3832214B2 (ja) * 2000-09-08 2006-10-11 セイコーエプソン株式会社 Ｓａｗ素子及びその製造方法
US6662419B2 (en) 2001-12-17 2003-12-16 Intel Corporation Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
JP2005206576A (ja) 2003-10-09 2005-08-04 Unitika Ltd ハナビラタケ由来のセラミド含有組成物
JPWO2005086345A1 (ja) 2004-03-05 2008-01-24 株式会社村田製作所 弾性境界波装置
DE102004049498A1 (de) 2004-10-11 2006-04-13 Epcos Ag Mit akustischen Wellen arbeitendes Bauelement und Verfahren zu dessen Herstellung
US20080206892A1 (en) 2005-06-17 2008-08-28 Koninklijke Philips Electronics, N.V. Rapid Magnetic Biosensor With Integrated Arrival Time Measuremnt
JP4707056B2 (ja) * 2005-08-31 2011-06-22 富士通株式会社 集積型電子部品および集積型電子部品製造方法
JP4943787B2 (ja) * 2006-09-13 2012-05-30 太陽誘電株式会社 弾性波デバイス、共振器およびフィルタ
WO2008038506A1 (fr) * 2006-09-27 2008-04-03 Murata Manufacturing Co., Ltd. Dispositif d'onde acoustique limite
JP2008131128A (ja) * 2006-11-17 2008-06-05 Matsushita Electric Ind Co Ltd 弾性表面波フィルタ、アンテナ共用器、およびそれらの製造方法
WO2008078481A1 (ja) * 2006-12-25 2008-07-03 Murata Manufacturing Co., Ltd. 弾性境界波装置
JP4793450B2 (ja) * 2007-01-19 2011-10-12 株式会社村田製作所 弾性境界波装置の製造方法
JP4724682B2 (ja) 2007-03-15 2011-07-13 日世株式会社 ミックスバルブ及びミックスバルブを備えた冷菓製造装置
US8362853B2 (en) 2009-06-19 2013-01-29 Qualcomm Incorporated Tunable MEMS resonators
JP5429200B2 (ja) * 2010-05-17 2014-02-26 株式会社村田製作所 複合圧電基板の製造方法および圧電デバイス
JP5637068B2 (ja) * 2010-08-27 2014-12-10 株式会社村田製作所 弾性境界波装置の製造方法および弾性境界波装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996004713A1 (en) * 1994-08-05 1996-02-15 Japan Energy Corporation Surface acoustic wave device and production method thereof
WO2002082645A1 (fr) * 2001-03-30 2002-10-17 Mitsubishi Denki Kabushiki Kaisha Element onde elastique et procede de production
JP2004297693A (ja) * 2003-03-28 2004-10-21 Fujitsu Media Device Kk 弾性表面波デバイスの製造方法及び弾性表面波デバイス
JP2007049482A (ja) * 2005-08-10 2007-02-22 Seiko Epson Corp 弾性境界波素子
WO2013031651A1 (ja) * 2011-09-02 2013-03-07 株式会社村田製作所 弾性波装置及びその製造方法

Also Published As

Publication number Publication date
CN105308860A (zh) 2016-02-03
JP6619327B2 (ja) 2019-12-11
EP2984754B1 (en) 2019-08-28
FR3004289B1 (fr) 2015-05-15
CN105308860B (zh) 2018-07-13
EP2984754A1 (en) 2016-02-17
KR20150139856A (ko) 2015-12-14
US10270413B2 (en) 2019-04-23
JP2016519897A (ja) 2016-07-07
US20160065162A1 (en) 2016-03-03
WO2014166722A1 (en) 2014-10-16
FR3004289A1 (fr) 2014-10-10

Similar Documents

Publication Publication Date Title
KR102184208B1 (ko) 진보되고 열적으로 보상된 표면 탄성파 소자 및 제조 방법
US12316298B2 (en) Surface acoustic wave device including transducer in dielectric between a piezoelectric material and a substrate
CN109660227B (zh) 薄膜体声波滤波器及其封装方法
JP4743258B2 (ja) 圧電デバイスの製造方法
US8035277B2 (en) Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure
CA2922956C (en) A thin film dielectric stack
US8601655B2 (en) Process of making a bulk acoustic wave structure with an aluminum copper nitride piezoelectric layer
EP3258472B1 (en) Capacitor with thin film multilayer dielectric having both columnar and randomly oriented crystal grains
WO2014094884A1 (en) Baw component, lamination for a baw component, and method for manufacturing a baw component, said baw component comprising two stacked piezoelectric materials that differ
KR20200029067A (ko) 헤테로 구조체 및 제조 방법
EP3367454A1 (en) Method and apparatus for a thin film dielectric stack
CN105811914A (zh) 一种体声波器件、集成结构及制造方法
CN117013984B (zh) 一种键合晶圆及薄膜声表面波器件
EP3531440B1 (en) Method for compensating for high thermal expansion coefficient mismatch of a stacked device
KR102870817B1 (ko) 압전 층을 전사하는데 사용될 수 있는, 무선주파수 장치용 압전 구조체를 제조하기 위한 공정 및 이러한 압전 층을 전사하기 위한 공정
US12334906B2 (en) Multi-layer resonator assembly and method for fabricating same
CN107924954B (zh) 沟槽电容器和用于制造沟槽电容器的方法
JP5096695B2 (ja) 薄膜音響共振器
CN118749231A (zh) 绝缘体上压电（poi）基板和制造绝缘体上压电（poi）基板的方法
CN120811320A (zh) 一种声表面波滤波器及其制备方法
CN118631202A (zh) 声表面波器件的制造方法及相关器件
CN117352986A (zh) 波导及其制备方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6