CN105304467B - 制造基板上的晶体岛的方法 - Google Patents

制造基板上的晶体岛的方法 Download PDF

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Publication number
CN105304467B
CN105304467B CN201510295774.6A CN201510295774A CN105304467B CN 105304467 B CN105304467 B CN 105304467B CN 201510295774 A CN201510295774 A CN 201510295774A CN 105304467 B CN105304467 B CN 105304467B
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CN
China
Prior art keywords
substrate
island
recess
crystal
island material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201510295774.6A
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English (en)
Chinese (zh)
Other versions
CN105304467A (zh
Inventor
道格拉斯·R·迪卡尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Diftek Lasers Inc
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Diftek Lasers Inc
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Publication of CN105304467A publication Critical patent/CN105304467A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
CN201510295774.6A 2014-06-04 2015-06-02 制造基板上的晶体岛的方法 Expired - Fee Related CN105304467B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462007624P 2014-06-04 2014-06-04
US62/007,624 2014-06-04

Publications (2)

Publication Number Publication Date
CN105304467A CN105304467A (zh) 2016-02-03
CN105304467B true CN105304467B (zh) 2018-12-18

Family

ID=52434622

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510295774.6A Expired - Fee Related CN105304467B (zh) 2014-06-04 2015-06-02 制造基板上的晶体岛的方法

Country Status (4)

Country Link
US (1) US9396932B2 (https=)
EP (1) EP2953158A3 (https=)
JP (2) JP6603044B2 (https=)
CN (1) CN105304467B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10319754B2 (en) * 2014-06-04 2019-06-11 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
EP3244453A1 (en) 2015-10-09 2017-11-15 Diftek Lasers, Inc. An electronic device and method of making thereof
JP6857517B2 (ja) * 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド 基板上に結晶アイランドを製造する方法
CN110537111B (zh) * 2017-05-03 2024-02-02 深圳帧观德芯科技有限公司 辐射检测器的制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102695914A (zh) * 2009-09-15 2012-09-26 无限科技全球公司 发光、光伏或其它电子装置及系统以及制造其之方法

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US4430150A (en) 1981-08-07 1984-02-07 Texas Instruments Incorporated Production of single crystal semiconductors
US4479847A (en) 1981-12-30 1984-10-30 California Institute Of Technology Equilibrium crystal growth from substrate confined liquid
US4637855A (en) 1985-04-30 1987-01-20 Texas Instruments Incorporated Process for producing crystalline silicon spheres
JPH0480922A (ja) * 1990-07-24 1992-03-13 Canon Inc 結晶物品の形成方法
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5431127A (en) 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
US6316278B1 (en) 1999-03-16 2001-11-13 Alien Technology Corporation Methods for fabricating a multiple modular assembly
JP4900756B2 (ja) 2002-04-16 2012-03-21 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置、集積回路、および電子機器
JP2005089239A (ja) * 2003-09-17 2005-04-07 Seiko Epson Corp シリコン曲面体の製造方法、シリコン曲面体、デバイス及びデバイスの製造方法
US7353598B2 (en) 2004-11-08 2008-04-08 Alien Technology Corporation Assembly comprising functional devices and method of making same
US8088676B2 (en) 2005-04-28 2012-01-03 The Hong Kong University Of Science And Technology Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
WO2008057483A2 (en) * 2006-11-03 2008-05-15 Semlux Technologies, Inc. Laser conversion of high purity silicon powder to densified garnular forms
JP2008119929A (ja) * 2006-11-10 2008-05-29 Canon Inc インクジェット記録ヘッドおよびインクジェット記録ヘッドの製造方法
JP2008143754A (ja) * 2006-12-12 2008-06-26 Union Material Kk 球状シリコン結晶及びその製造方法
EP2099064A1 (en) 2008-03-07 2009-09-09 Technische Universiteit Delft Method for manufacturing a semiconductor device
TW201014937A (en) * 2008-10-06 2010-04-16 Clean Venture 21 Corp Method for producing semiconductor particles
US8846505B2 (en) * 2009-03-09 2014-09-30 Skokie Swift Corporation Method of growing semiconductor micro-crystalline islands on an amorphous substrate
MY160016A (en) 2009-03-09 2017-02-15 1366 Tech Inc Methods and apparati for making thin semiconductor bodies from molten material
WO2012102343A1 (ja) * 2011-01-26 2012-08-02 国立大学法人山口大学 シリコン融液接触部材、その製法、および結晶シリコンの製造方法
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Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102695914A (zh) * 2009-09-15 2012-09-26 无限科技全球公司 发光、光伏或其它电子装置及系统以及制造其之方法

Also Published As

Publication number Publication date
JP6603044B2 (ja) 2019-11-06
US20150357192A1 (en) 2015-12-10
EP2953158A2 (en) 2015-12-09
EP2953158A3 (en) 2016-02-17
JP2018085529A (ja) 2018-05-31
CN105304467A (zh) 2016-02-03
US9396932B2 (en) 2016-07-19
HK1215618A1 (zh) 2016-09-02
JP2015229632A (ja) 2015-12-21

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