CN105185904B - 一种多阻态双层薄膜结构阻变储存器及其制备方法 - Google Patents
一种多阻态双层薄膜结构阻变储存器及其制备方法 Download PDFInfo
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- CN105185904B CN105185904B CN201510626464.8A CN201510626464A CN105185904B CN 105185904 B CN105185904 B CN 105185904B CN 201510626464 A CN201510626464 A CN 201510626464A CN 105185904 B CN105185904 B CN 105185904B
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 10
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims description 36
- 238000004544 sputter deposition Methods 0.000 claims description 33
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000010931 gold Substances 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
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- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- NFFYXVOHHLQALV-UHFFFAOYSA-N copper(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Cu].[Cu] NFFYXVOHHLQALV-UHFFFAOYSA-N 0.000 claims description 2
- SLZVKEARWFTMOZ-UHFFFAOYSA-N copper;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Cu+2] SLZVKEARWFTMOZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004062 sedimentation Methods 0.000 claims 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 101100339677 Arabidopsis thaliana HRS1 gene Proteins 0.000 description 5
- 101100177642 Rattus norvegicus Hgs gene Proteins 0.000 description 5
- 101100129874 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) PGD1 gene Proteins 0.000 description 5
- 101100129853 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SRB2 gene Proteins 0.000 description 5
- 101100129591 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mcp6 gene Proteins 0.000 description 5
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- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 239000004408 titanium dioxide Substances 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
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- 229910000431 copper oxide Inorganic materials 0.000 description 1
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CN106531885B (zh) * | 2016-11-10 | 2018-08-24 | 河北大学 | 一种基于Ga2O3神经仿生层的神经仿生器件及其制备方法 |
CN108470827A (zh) * | 2018-03-05 | 2018-08-31 | 湖北大学 | 一种柔性透明过渡金属氧化物阻变存储器及其制备方法 |
CN110739395A (zh) * | 2019-10-30 | 2020-01-31 | 上海华力微电子有限公司 | 阻变存储器及其制备方法 |
CN113793900A (zh) * | 2021-09-14 | 2021-12-14 | 广东工业大学 | 一种基于azo薄膜的阻变存储器及其制备方法 |
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CN102169957A (zh) * | 2011-03-12 | 2011-08-31 | 中山大学 | 一种双极阻变存储器及其制备方法 |
CN104409630A (zh) * | 2014-11-27 | 2015-03-11 | 浙江理工大学 | 一种基于氧化镓薄膜的单极型阻变存储器及其制备方法 |
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CN102169957A (zh) * | 2011-03-12 | 2011-08-31 | 中山大学 | 一种双极阻变存储器及其制备方法 |
CN104409630A (zh) * | 2014-11-27 | 2015-03-11 | 浙江理工大学 | 一种基于氧化镓薄膜的单极型阻变存储器及其制备方法 |
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