CN105118802A - 电池片背面抛光用水膜厚度控制装置 - Google Patents
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Abstract
本发明公开了一种电池片背面抛光用水膜厚度控制装置,其提高了电池片蚀刻中的水膜均匀性。一种电池片背面抛光用水膜厚度控制装置,设置在水膜喷淋装置和刻蚀槽之间,所述水膜厚度控制装置包括沿电池片的输送方向依次排布的减薄机构、匀厚机构,所述减薄机构和匀厚机构形成太阳能电池片的输送通道,所述匀厚机构包括至少一个的第一匀厚滚轮,所述第一匀厚滚轮的圆周面上设置有螺纹以在接触电池片表面时带走电池片上张力过大的水膜。
Description
技术领域
本发明涉及一种电池片背面抛光用水膜厚度控制装置。
背景技术
目前太阳能电池片背抛光工艺可以提高电池片背面反射率,增加电池片对透射光的反射,提升钝化效果,增加电流密度以及开路电压,进而提高了电池转换效率。目前采用的背抛光有刻蚀前喷蜡保护P-N结背抛法、机碱TMAH背抛法、高浓度酸湿法刻蚀背抛光法。上述方法可以完成电池片的背抛光工艺,然而存在工艺复杂、成本高、技术要求高、外观不良率高、环境污染等弊端,不利于广泛生产。
其中,常规高浓度酸腐蚀背抛光法在腐蚀电池片的背面的同时,易造成正面P-N结的破坏,影响电池片的受光面积、破坏电池片的外观,最终造成电池片外观不良和效率降低。因此,酸腐蚀背抛光法通常配合水膜保护蚀刻工艺。
水膜保护刻蚀工艺是指在链式湿法刻蚀前,在硅片的扩散面喷布一层均匀的水膜,再进行常规湿法刻蚀的一种新型湿法刻蚀方法。水膜保护刻蚀配合高浓度酸腐蚀背抛光工艺时,存在以下问题,1、由于硅片的厚度不均匀(200±50um)导致水膜厚薄不一,水膜掉落刻蚀液中造成刻蚀液的稀释,2、水膜掉落造成的边缘P-N结的刻蚀不完全造成边缘绝缘性差,3、水膜掉落造成的过刻,4、水膜掉落导致刻蚀液比例失衡降低刻蚀液寿命。
发明内容
针对上述问题,本发明的目的是提供一种电池片背面抛光用水膜厚度控制装置,其提高了电池片蚀刻中的水膜均匀性。
为解决上述技术问题,本发明采用如下技术方案:
一种电池片背面抛光用水膜厚度控制装置,设置在水膜喷淋装置和刻蚀槽之间,所述水膜厚度控制装置包括沿电池片的输送方向依次排布的减薄机构、匀厚机构,所述减薄机构和匀厚机构形成太阳能电池片的输送通道,所述匀厚机构包括至少一个的第一匀厚滚轮,所述第一匀厚滚轮的圆周面上设置有螺纹以在接触电池片表面时带走电池片上张力过大的水膜。
优选地,所述第一匀厚滚轮为多个,且多个所述第一匀厚滚轮持平设置且沿电池片的输送方向间隔排布。
优选地,所述第一匀厚滚轮由PVDF制成。
优选地,所述输送通道位于所述第一匀厚滚轮的上方。
优选地,所述减薄机构包括输送滚轮和减薄滚轮,所述输送通道位于所述输送滚轮和所述减薄滚轮之间。
更优选地,所述减薄滚轮相对所述输送滚轮可上下移动地设置。
更优选地,所述减薄滚轮位于所述输送滚轮正上方。
更优选地,所述减薄滚轮由PVDF制成且具有光滑的圆周面。
更优选地,所述减薄机构还包括用于与电池片的表面接触以进行初步减薄的第二匀厚滚轮,所述第二匀厚滚轮的圆周面具有螺纹。
进一步地,所述第二匀厚滚轮设置在所述输送通道的下方。
本发明采用以上结构,具有如下优点:1、不同厚度硅片(200±50um)水膜厚度一致;2、水膜掉水量小于0.1ml/pcs;3、边缘P-N结刻蚀绝缘性大于10KΩ;4、刻蚀液使用寿命达到500万片;5、酸的使用和排放量减少30%。
附图说明
图1为本发明的水膜厚度控制装置的结构示意图。
其中,1、水膜喷淋装置;2、水膜厚度控制装置;21、减薄机构;211、减薄滚轮;212、输送滚轮;213、第二匀厚滚轮;22、匀厚机构;221、第一匀厚滚轮;3、刻蚀槽。
具体实施方式
下面结合附图对本发明的较佳实施例进行详细阐述,以使本发明的优点和特征能更易于被本领域的技术人员理解。
图1所示为本发明的一种用在晶体硅太阳能电池片的背面抛光工艺中的水膜厚度控制装置。结合图1所示,该水膜厚度控制装置2设置在水膜喷淋装置1和刻蚀槽3之间。太阳能电池片沿图1中箭头所示方向输送,并依次经过水膜喷淋装置1、水膜厚度控制装置2、刻蚀槽3。
水膜厚度控制装置2包括沿电池片的输送方向依次排布的减薄机构21、匀厚机构22。减薄机构21和匀厚机构22形成太阳能电池片的输送通道,减薄机构21设置在水膜喷淋装置的正下方。
匀厚机构22包括五个沿电池片的输送方向等间隔排布的第一匀厚滚轮221,五个第一匀厚滚轮221持平设置使得各第一匀厚滚轮221与电池片表面的接触部分位于同一个水平面上。输送轨道位于第一匀厚滚轮221的上方,即输送过程中,电池片的下表面和第一匀厚滚轮221接触。第一匀厚滚轮221由聚偏氟乙烯(以下简称PVDF)制成,且其圆周面上开设有螺纹,螺纹具有带液功能,当电池片在输送过程中接触第一匀厚滚轮221的圆周面时,带走电池片表面张力过大的水膜,通过五个第一匀厚滚轮221的匀厚之后,电池片表面的水膜的张力相同。
减薄机构21包括一个减薄滚轮211、一个第二匀厚滚轮213和多个输送滚轮212。减薄滚轮211位于第二匀厚滚轮213和输送滚轮212之上,输送通道位于减薄滚轮211与第二匀厚滚轮213及输送滚轮212之间,即,仅减薄滚轮211位于输送通道之上。其中,减薄滚轮211和第二匀厚滚轮213均由PVDF制成,且减薄滚轮211的圆周面是光滑的,第二匀厚滚轮213的圆周面上开设有具有带液功能的螺纹。减薄滚路位于输送滚轮212的正上方且两者之间的竖直距离可调,即,减薄滚轮211相对输送滚轮212可上下移动地设置以用于不同厚度的电池片。
本发明提供了的水膜厚度控制装置,通过在水膜保护刻蚀工艺的喷布水膜工序和刻蚀工序之间增加水膜厚度控制装置,有效控制水膜厚度的均匀性,该装置由水膜减薄装置和水膜匀厚滚轮组成。在水膜喷布之后,根据硅片的厚度对水膜进行初步减薄;在进行初步减薄之后,不同厚度的硅片(200±50um)带着厚度不一的水膜进入第一匀厚滚轮221,在与电池片接触的时候能将电池片表面张力过大的水膜通过螺纹带走;匀厚之后,电池片表面水膜的张力相同,不同厚度的硅片(200±50um)带着相同厚度的水膜进入刻蚀槽进行常规刻蚀。本发明的水膜厚度控制装置可有效控制不同厚度电池片的水膜厚度均匀性,减少由于水膜过厚在刻蚀反应过程中发生掉水,提高电池片刻蚀后边缘绝缘性和背面抛光均匀性,最终减少由于P-N结刻蚀不干净造成的漏电,配合高浓度酸腐蚀背抛光工艺,均匀提高背面反射率至52%以上,改善背面欧姆接触,从而提高电池片短路电流和开路电压,提升电池片转换效率达19.8%,同时,该可控水膜保护刻蚀系统用于晶体硅太阳能电池片背抛光工艺,由于水膜均匀性提高,刻蚀液可以稳定生产500万片,大幅节约生产时间,减少酸的使用和排放。
上述实施例只为说明本发明的技术构思及特点,是一种优选的实施例,其目的在于熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限定本发明的保护范围。凡根据本发明的精神实质所作的等效变换或修饰,都应涵盖在本发明的保护范围之内。
Claims (10)
1.一种电池片背面抛光用水膜厚度控制装置,设置在水膜喷淋装置和刻蚀槽之间,其特征在于:所述水膜厚度控制装置包括沿电池片的输送方向依次排布的减薄机构、匀厚机构,所述减薄机构和匀厚机构形成太阳能电池片的输送通道,所述匀厚机构包括至少一个的第一匀厚滚轮,所述第一匀厚滚轮的圆周面上设置有螺纹以在接触电池片表面时带走电池片上张力过大的水膜。
2.根据权利要求1所述的水膜厚度控制装置,其特征在于:所述第一匀厚滚轮为多个,且多个所述第一匀厚滚轮持平设置且沿电池片的输送方向间隔排布。
3.根据权利要求1所述的水膜厚度控制装置,其特征在于:所述第一匀厚滚轮由PVDF制成。
4.根据权利要求1所述的水膜厚度控制装置,其特征在于:所述输送通道位于所述第一匀厚滚轮的上方。
5.根据权利要求1所述的水膜厚度控制装置,其特征在于:所述减薄机构包括输送滚轮和减薄滚轮,所述输送通道位于所述输送滚轮和所述减薄滚轮之间。
6.根据权利要求5所述的水膜厚度控制装置,其特征在于:所述减薄滚轮相对所述输送滚轮可上下移动地设置。
7.根据权利要求5所述的水膜厚度控制装置,其特征在于:所述减薄滚轮位于所述输送滚轮正上方。
8.根据权利要求5所述的水膜厚度控制装置,其特征在于:所述减薄滚轮由PVDF制成且具有光滑的圆周面。
9.根据权利要求5所述的水膜厚度控制装置,其特征在于:所述减薄机构还包括用于与电池片的表面接触以进行初步减薄的第二匀厚滚轮,所述第二匀厚滚轮的圆周面具有螺纹。
10.根据权利要求9所述的水膜厚度控制装置,其特征在于:所述第二匀厚滚轮设置在所述输送通道的下方。
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Cited By (5)
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CN106449865A (zh) * | 2016-08-31 | 2017-02-22 | 泰州德通电气有限公司 | 一种光伏电池水膜刮水装置 |
CN106449492A (zh) * | 2016-12-15 | 2017-02-22 | 常州亿晶光电科技有限公司 | 刻蚀硅片水膜去水装置 |
CN106803481A (zh) * | 2017-03-20 | 2017-06-06 | 常州亿晶光电科技有限公司 | 硅片去水膜设备 |
CN110518089A (zh) * | 2019-07-24 | 2019-11-29 | 苏州腾晖光伏技术有限公司 | 一种p型晶体硅电池的制备方法 |
CN115156142A (zh) * | 2022-05-30 | 2022-10-11 | 江苏亚电科技有限公司 | Psg水膜喷淋机构及光伏硅片附水膜方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58166736A (ja) * | 1982-03-29 | 1983-10-01 | Hitachi Ltd | エツチング装置 |
CN102386086A (zh) * | 2011-11-10 | 2012-03-21 | 北京七星华创电子股份有限公司 | 滚轮及刻蚀清洗机 |
CN202332919U (zh) * | 2011-11-03 | 2012-07-11 | 天威新能源控股有限公司 | 晶体硅太阳能电池刻蚀水膜改善装置 |
CN204332925U (zh) * | 2015-01-22 | 2015-05-13 | 海南英利新能源有限公司 | 硅片刻蚀设备 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN204834588U (zh) * | 2015-09-06 | 2015-12-02 | 昊诚光电(太仓)有限公司 | 电池片背面抛光用水膜厚度控制装置 |
-
2015
- 2015-09-06 CN CN201510559472.5A patent/CN105118802B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58166736A (ja) * | 1982-03-29 | 1983-10-01 | Hitachi Ltd | エツチング装置 |
CN202332919U (zh) * | 2011-11-03 | 2012-07-11 | 天威新能源控股有限公司 | 晶体硅太阳能电池刻蚀水膜改善装置 |
CN102386086A (zh) * | 2011-11-10 | 2012-03-21 | 北京七星华创电子股份有限公司 | 滚轮及刻蚀清洗机 |
CN204332925U (zh) * | 2015-01-22 | 2015-05-13 | 海南英利新能源有限公司 | 硅片刻蚀设备 |
Cited By (6)
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---|---|---|---|---|
CN106449865A (zh) * | 2016-08-31 | 2017-02-22 | 泰州德通电气有限公司 | 一种光伏电池水膜刮水装置 |
CN106449492A (zh) * | 2016-12-15 | 2017-02-22 | 常州亿晶光电科技有限公司 | 刻蚀硅片水膜去水装置 |
CN106803481A (zh) * | 2017-03-20 | 2017-06-06 | 常州亿晶光电科技有限公司 | 硅片去水膜设备 |
CN110518089A (zh) * | 2019-07-24 | 2019-11-29 | 苏州腾晖光伏技术有限公司 | 一种p型晶体硅电池的制备方法 |
CN115156142A (zh) * | 2022-05-30 | 2022-10-11 | 江苏亚电科技有限公司 | Psg水膜喷淋机构及光伏硅片附水膜方法 |
CN115156142B (zh) * | 2022-05-30 | 2024-04-30 | 江苏亚电科技股份有限公司 | Psg水膜喷淋机构及光伏硅片附水膜方法 |
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