CN105097960A - 具有异质结构的变容二极管 - Google Patents

具有异质结构的变容二极管 Download PDF

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Publication number
CN105097960A
CN105097960A CN201510249636.4A CN201510249636A CN105097960A CN 105097960 A CN105097960 A CN 105097960A CN 201510249636 A CN201510249636 A CN 201510249636A CN 105097960 A CN105097960 A CN 105097960A
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CN
China
Prior art keywords
layer
semiconductor device
thickness
ground floor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510249636.4A
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English (en)
Chinese (zh)
Inventor
陶更明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Triquint Semiconductor Inc
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Filing date
Publication date
Application filed by Triquint Semiconductor Inc filed Critical Triquint Semiconductor Inc
Publication of CN105097960A publication Critical patent/CN105097960A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
CN201510249636.4A 2014-05-16 2015-05-15 具有异质结构的变容二极管 Pending CN105097960A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/280,404 2014-05-16
US14/280,404 US10263125B2 (en) 2014-05-16 2014-05-16 Varactor diode with heterostructure

Publications (1)

Publication Number Publication Date
CN105097960A true CN105097960A (zh) 2015-11-25

Family

ID=54361767

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510249636.4A Pending CN105097960A (zh) 2014-05-16 2015-05-15 具有异质结构的变容二极管

Country Status (5)

Country Link
US (1) US10263125B2 (enExample)
CN (1) CN105097960A (enExample)
DE (1) DE102015005831A1 (enExample)
FR (1) FR3021160B1 (enExample)
TW (1) TWI654768B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113013261A (zh) * 2021-02-23 2021-06-22 温州大学 纳米硅/非晶碳化硅异质结多势垒变容二极管及制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
JP2000106370A (ja) * 1998-07-27 2000-04-11 Advantest Corp 負性抵抗を有するバイポ―ラトランジスタ
CN1574388A (zh) * 2003-05-28 2005-02-02 株式会社东芝 半导体器件
CN1619830A (zh) * 2003-11-18 2005-05-25 Nec化合物半导体器件株式会社 半导体器件
CN1638142A (zh) * 2004-01-07 2005-07-13 松下电器产业株式会社 半导体器件
CN1698210A (zh) * 2003-01-06 2005-11-16 日本电信电话株式会社 P型氮化物半导体结构以及双极晶体管
US20100308211A1 (en) * 2009-06-04 2010-12-09 Samsung Electronics Co., Ltd. Optoelectronic shutter, method of operating the same and optical apparatus including the optoelectronic shutter
US20140110761A1 (en) * 2012-10-19 2014-04-24 Yuefei Yang Monolithic HBT with Wide-Tuning Range Varactor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103443988B (zh) * 2011-03-25 2017-03-22 株式会社杰士汤浅国际 圆筒形电池
US8963289B2 (en) * 2012-05-08 2015-02-24 Eta Semiconductor Inc. Digital semiconductor variable capacitor
US9099518B1 (en) * 2014-02-04 2015-08-04 Triquint Semiconductor, Inc. Electrostatic discharge protection device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
JP2000106370A (ja) * 1998-07-27 2000-04-11 Advantest Corp 負性抵抗を有するバイポ―ラトランジスタ
CN1698210A (zh) * 2003-01-06 2005-11-16 日本电信电话株式会社 P型氮化物半导体结构以及双极晶体管
CN1574388A (zh) * 2003-05-28 2005-02-02 株式会社东芝 半导体器件
CN1619830A (zh) * 2003-11-18 2005-05-25 Nec化合物半导体器件株式会社 半导体器件
CN1638142A (zh) * 2004-01-07 2005-07-13 松下电器产业株式会社 半导体器件
US20100308211A1 (en) * 2009-06-04 2010-12-09 Samsung Electronics Co., Ltd. Optoelectronic shutter, method of operating the same and optical apparatus including the optoelectronic shutter
US20140110761A1 (en) * 2012-10-19 2014-04-24 Yuefei Yang Monolithic HBT with Wide-Tuning Range Varactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113013261A (zh) * 2021-02-23 2021-06-22 温州大学 纳米硅/非晶碳化硅异质结多势垒变容二极管及制备方法

Also Published As

Publication number Publication date
US10263125B2 (en) 2019-04-16
DE102015005831A1 (de) 2015-11-19
FR3021160A1 (enExample) 2015-11-20
TW201547033A (zh) 2015-12-16
US20150333192A1 (en) 2015-11-19
FR3021160B1 (fr) 2018-05-18
TWI654768B (zh) 2019-03-21

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Legal Events

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TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20161222

Address after: North Carolina

Applicant after: Qorvo American company

Address before: oregon

Applicant before: Triquint Semiconductor Inc

SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20151125