FR3021160A1 - - Google Patents
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- Publication number
- FR3021160A1 FR3021160A1 FR1554009A FR1554009A FR3021160A1 FR 3021160 A1 FR3021160 A1 FR 3021160A1 FR 1554009 A FR1554009 A FR 1554009A FR 1554009 A FR1554009 A FR 1554009A FR 3021160 A1 FR3021160 A1 FR 3021160A1
- Authority
- FR
- France
- Prior art keywords
- layer
- collector
- thickness
- forming
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 23
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 230000010287 polarization Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910005540 GaP Inorganic materials 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 20
- 239000002131 composite material Substances 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 6
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14280404 | 2014-05-16 | ||
| US14/280,404 US10263125B2 (en) | 2014-05-16 | 2014-05-16 | Varactor diode with heterostructure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3021160A1 true FR3021160A1 (enExample) | 2015-11-20 |
| FR3021160B1 FR3021160B1 (fr) | 2018-05-18 |
Family
ID=54361767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1554009A Active FR3021160B1 (fr) | 2014-05-16 | 2015-05-05 | Diode varactor a heterostructure |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10263125B2 (enExample) |
| CN (1) | CN105097960A (enExample) |
| DE (1) | DE102015005831A1 (enExample) |
| FR (1) | FR3021160B1 (enExample) |
| TW (1) | TWI654768B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013261B (zh) * | 2021-02-23 | 2022-08-23 | 温州大学 | 纳米硅/非晶碳化硅异质结多势垒变容二极管及制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5150185A (en) * | 1990-04-18 | 1992-09-22 | Fujitsu Limited | Semiconductor device |
| JP2000106370A (ja) * | 1998-07-27 | 2000-04-11 | Advantest Corp | 負性抵抗を有するバイポ―ラトランジスタ |
| CN1698210A (zh) * | 2003-01-06 | 2005-11-16 | 日本电信电话株式会社 | P型氮化物半导体结构以及双极晶体管 |
| US7038250B2 (en) * | 2003-05-28 | 2006-05-02 | Kabushiki Kaisha Toshiba | Semiconductor device suited for a high frequency amplifier |
| JP2005150531A (ja) * | 2003-11-18 | 2005-06-09 | Nec Compound Semiconductor Devices Ltd | 半導体装置 |
| JP2005197440A (ja) * | 2004-01-07 | 2005-07-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| KR101623960B1 (ko) * | 2009-06-04 | 2016-05-25 | 삼성전자주식회사 | 광전자 셔터, 이의 동작 방법 및 광전자 셔터를 채용한 광학 장치 |
| US10243177B2 (en) * | 2011-03-25 | 2019-03-26 | Gs Yuasa International Ltd. | Cylindrical battery and battery electrode structure |
| US8963289B2 (en) * | 2012-05-08 | 2015-02-24 | Eta Semiconductor Inc. | Digital semiconductor variable capacitor |
| US8716757B1 (en) * | 2012-10-19 | 2014-05-06 | Global Communication Semiconductors, Inc. | Monolithic HBT with wide-tuning range varactor |
| US9099518B1 (en) * | 2014-02-04 | 2015-08-04 | Triquint Semiconductor, Inc. | Electrostatic discharge protection device |
-
2014
- 2014-05-16 US US14/280,404 patent/US10263125B2/en active Active
-
2015
- 2015-04-20 TW TW104112553A patent/TWI654768B/zh not_active IP Right Cessation
- 2015-05-05 FR FR1554009A patent/FR3021160B1/fr active Active
- 2015-05-07 DE DE102015005831.2A patent/DE102015005831A1/de active Pending
- 2015-05-15 CN CN201510249636.4A patent/CN105097960A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US10263125B2 (en) | 2019-04-16 |
| CN105097960A (zh) | 2015-11-25 |
| FR3021160B1 (fr) | 2018-05-18 |
| US20150333192A1 (en) | 2015-11-19 |
| TWI654768B (zh) | 2019-03-21 |
| TW201547033A (zh) | 2015-12-16 |
| DE102015005831A1 (de) | 2015-11-19 |
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| PLSC | Publication of the preliminary search report |
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