FR3021160B1 - Diode varactor a heterostructure - Google Patents
Diode varactor a heterostructure Download PDFInfo
- Publication number
- FR3021160B1 FR3021160B1 FR1554009A FR1554009A FR3021160B1 FR 3021160 B1 FR3021160 B1 FR 3021160B1 FR 1554009 A FR1554009 A FR 1554009A FR 1554009 A FR1554009 A FR 1554009A FR 3021160 B1 FR3021160 B1 FR 3021160B1
- Authority
- FR
- France
- Prior art keywords
- heterostructure
- diode varactor
- varactor
- diode
- varactor heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/01—Manufacture or treatment
- H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14280404 | 2014-05-16 | ||
| US14/280,404 US10263125B2 (en) | 2014-05-16 | 2014-05-16 | Varactor diode with heterostructure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3021160A1 FR3021160A1 (enExample) | 2015-11-20 |
| FR3021160B1 true FR3021160B1 (fr) | 2018-05-18 |
Family
ID=54361767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1554009A Active FR3021160B1 (fr) | 2014-05-16 | 2015-05-05 | Diode varactor a heterostructure |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10263125B2 (enExample) |
| CN (1) | CN105097960A (enExample) |
| DE (1) | DE102015005831A1 (enExample) |
| FR (1) | FR3021160B1 (enExample) |
| TW (1) | TWI654768B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013261B (zh) * | 2021-02-23 | 2022-08-23 | 温州大学 | 纳米硅/非晶碳化硅异质结多势垒变容二极管及制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5150185A (en) * | 1990-04-18 | 1992-09-22 | Fujitsu Limited | Semiconductor device |
| JP2000106370A (ja) * | 1998-07-27 | 2000-04-11 | Advantest Corp | 負性抵抗を有するバイポ―ラトランジスタ |
| CN1698210A (zh) * | 2003-01-06 | 2005-11-16 | 日本电信电话株式会社 | P型氮化物半导体结构以及双极晶体管 |
| US7038250B2 (en) * | 2003-05-28 | 2006-05-02 | Kabushiki Kaisha Toshiba | Semiconductor device suited for a high frequency amplifier |
| JP2005150531A (ja) * | 2003-11-18 | 2005-06-09 | Nec Compound Semiconductor Devices Ltd | 半導体装置 |
| JP2005197440A (ja) * | 2004-01-07 | 2005-07-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| KR101623960B1 (ko) * | 2009-06-04 | 2016-05-25 | 삼성전자주식회사 | 광전자 셔터, 이의 동작 방법 및 광전자 셔터를 채용한 광학 장치 |
| US10243177B2 (en) * | 2011-03-25 | 2019-03-26 | Gs Yuasa International Ltd. | Cylindrical battery and battery electrode structure |
| US8963289B2 (en) * | 2012-05-08 | 2015-02-24 | Eta Semiconductor Inc. | Digital semiconductor variable capacitor |
| US8716757B1 (en) * | 2012-10-19 | 2014-05-06 | Global Communication Semiconductors, Inc. | Monolithic HBT with wide-tuning range varactor |
| US9099518B1 (en) * | 2014-02-04 | 2015-08-04 | Triquint Semiconductor, Inc. | Electrostatic discharge protection device |
-
2014
- 2014-05-16 US US14/280,404 patent/US10263125B2/en active Active
-
2015
- 2015-04-20 TW TW104112553A patent/TWI654768B/zh not_active IP Right Cessation
- 2015-05-05 FR FR1554009A patent/FR3021160B1/fr active Active
- 2015-05-07 DE DE102015005831.2A patent/DE102015005831A1/de active Pending
- 2015-05-15 CN CN201510249636.4A patent/CN105097960A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US10263125B2 (en) | 2019-04-16 |
| CN105097960A (zh) | 2015-11-25 |
| US20150333192A1 (en) | 2015-11-19 |
| TWI654768B (zh) | 2019-03-21 |
| TW201547033A (zh) | 2015-12-16 |
| DE102015005831A1 (de) | 2015-11-19 |
| FR3021160A1 (enExample) | 2015-11-20 |
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Legal Events
| Date | Code | Title | Description |
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| PLFP | Fee payment |
Year of fee payment: 2 |
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| PLSC | Publication of the preliminary search report |
Effective date: 20170908 |
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| PLFP | Fee payment |
Year of fee payment: 4 |
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Year of fee payment: 5 |
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| PLFP | Fee payment |
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Year of fee payment: 11 |