TWI654768B - 具有異質結構的變容二極體 - Google Patents

具有異質結構的變容二極體

Info

Publication number
TWI654768B
TWI654768B TW104112553A TW104112553A TWI654768B TW I654768 B TWI654768 B TW I654768B TW 104112553 A TW104112553 A TW 104112553A TW 104112553 A TW104112553 A TW 104112553A TW I654768 B TWI654768 B TW I654768B
Authority
TW
Taiwan
Prior art keywords
layer
collector
thickness
doping
angstroms
Prior art date
Application number
TW104112553A
Other languages
English (en)
Chinese (zh)
Other versions
TW201547033A (zh
Inventor
更明 陶
Original Assignee
美商三胞半導體公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商三胞半導體公司 filed Critical 美商三胞半導體公司
Publication of TW201547033A publication Critical patent/TW201547033A/zh
Application granted granted Critical
Publication of TWI654768B publication Critical patent/TWI654768B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
TW104112553A 2014-05-16 2015-04-20 具有異質結構的變容二極體 TWI654768B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/280,404 2014-05-16
US14/280,404 US10263125B2 (en) 2014-05-16 2014-05-16 Varactor diode with heterostructure

Publications (2)

Publication Number Publication Date
TW201547033A TW201547033A (zh) 2015-12-16
TWI654768B true TWI654768B (zh) 2019-03-21

Family

ID=54361767

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104112553A TWI654768B (zh) 2014-05-16 2015-04-20 具有異質結構的變容二極體

Country Status (5)

Country Link
US (1) US10263125B2 (enExample)
CN (1) CN105097960A (enExample)
DE (1) DE102015005831A1 (enExample)
FR (1) FR3021160B1 (enExample)
TW (1) TWI654768B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113013261B (zh) * 2021-02-23 2022-08-23 温州大学 纳米硅/非晶碳化硅异质结多势垒变容二极管及制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140110761A1 (en) 2012-10-19 2014-04-24 Yuefei Yang Monolithic HBT with Wide-Tuning Range Varactor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5150185A (en) * 1990-04-18 1992-09-22 Fujitsu Limited Semiconductor device
JP2000106370A (ja) * 1998-07-27 2000-04-11 Advantest Corp 負性抵抗を有するバイポ―ラトランジスタ
CN1698210A (zh) * 2003-01-06 2005-11-16 日本电信电话株式会社 P型氮化物半导体结构以及双极晶体管
US7038250B2 (en) * 2003-05-28 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor device suited for a high frequency amplifier
JP2005150531A (ja) * 2003-11-18 2005-06-09 Nec Compound Semiconductor Devices Ltd 半導体装置
JP2005197440A (ja) * 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd 半導体装置
KR101623960B1 (ko) * 2009-06-04 2016-05-25 삼성전자주식회사 광전자 셔터, 이의 동작 방법 및 광전자 셔터를 채용한 광학 장치
US10243177B2 (en) * 2011-03-25 2019-03-26 Gs Yuasa International Ltd. Cylindrical battery and battery electrode structure
US8963289B2 (en) * 2012-05-08 2015-02-24 Eta Semiconductor Inc. Digital semiconductor variable capacitor
US9099518B1 (en) * 2014-02-04 2015-08-04 Triquint Semiconductor, Inc. Electrostatic discharge protection device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140110761A1 (en) 2012-10-19 2014-04-24 Yuefei Yang Monolithic HBT with Wide-Tuning Range Varactor

Also Published As

Publication number Publication date
US10263125B2 (en) 2019-04-16
CN105097960A (zh) 2015-11-25
FR3021160B1 (fr) 2018-05-18
US20150333192A1 (en) 2015-11-19
TW201547033A (zh) 2015-12-16
DE102015005831A1 (de) 2015-11-19
FR3021160A1 (enExample) 2015-11-20

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees