CN105097637B - 晶片的加工方法 - Google Patents
晶片的加工方法 Download PDFInfo
- Publication number
- CN105097637B CN105097637B CN201510254373.6A CN201510254373A CN105097637B CN 105097637 B CN105097637 B CN 105097637B CN 201510254373 A CN201510254373 A CN 201510254373A CN 105097637 B CN105097637 B CN 105097637B
- Authority
- CN
- China
- Prior art keywords
- wafer
- support plate
- adhesive
- region
- annular groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 8
- 239000000853 adhesive Substances 0.000 claims abstract description 46
- 230000001070 adhesive effect Effects 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000002093 peripheral effect Effects 0.000 claims abstract description 20
- 238000003672 processing method Methods 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 abstract description 4
- 239000011230 binding agent Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49863—Assembling or joining with prestressing of part
- Y10T29/49865—Assembling or joining with prestressing of part by temperature differential [e.g., shrink fit]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明提供一种晶片的加工方法,支承板使得晶片容易剥离且不会在器件的表面上残留胶水和粘结剂。一种支承板,晶片的正面被粘贴在该支承板上,所述晶片在正面具有:形成有多个器件的器件区域;和围绕该器件区域的外周剩余区域,所述支承板的特征在于,所述支承板具备:基板,在该基板的、与粘贴的晶片的该器件区域相对应的表面区域中形成有凹部,并且,在该基板的、与晶片的该外周剩余区域相对应的区域中形成有环状槽;和柔软部件,该柔软部件被填充在该基板的该凹部中,通过将粘结剂注入该环状槽中,由此经由该粘结剂将晶片粘贴在该支承板的表面上。
Description
技术领域
本发明涉及支承晶片的支承板、支承板的形成方法和使用了支承板的晶片的加工方法。
背景技术
对于在正面上形成有IC(Integrated Circuit:集成电路)、LSI(large scaleintegration:大规模集成电路)等多个器件且一个个器件由形成为格子状的多条分割预定线(间隔道)划分而成的半导体晶片,在通过磨削装置对其背面进行磨削而加工成规定的厚度后,通过切削装置(切割装置)来切削分割预定线而分割成一个个器件,分割出的器件被广泛利用于手机、电脑等各种电子设备。
对晶片的背面进行磨削的磨削装置具备:卡盘工作台,该卡盘工作台保持晶片;以及磨削构件,在该磨削构件上以能够旋转的方式安装有磨轮,该磨轮具有对保持在该卡盘工作台上的晶片进行磨削的磨具,该磨削装置能够高精度地将晶片磨削成期望的厚度。
为了对晶片的背面进行磨削,必须利用卡盘工作台来抽吸并保持晶片的形成有多个器件的正面侧,因此,通常在晶片的正面粘贴有保护带以免损伤器件(例如参照日本特开平5-198542号公报)。
近年,电子设备存在小型化、薄型化的倾向,其中所组装的半导体器件也被要求小型化、薄型化。但是,如果对晶片的背面进行磨削来使晶片变薄为例如100μm以下、进而为50μm以下,则由于刚性显著下降而导致此后的处理变得非常困难。而且,根据情况,还存在晶片发生翘曲、由于翘曲而导致晶片自身破损这样的担忧。
为了解决这样的问题而采用了晶片支承系统(WSS)。在WSS中,预先使用粘结剂将晶片的正面侧粘贴在具有刚性的保护部件上,然后对晶片的背面进行磨削使晶片变薄为规定的厚度(例如参照日本特开2004-207606号公报)。
专利文献1:日本特开平5-198542号公报
专利文献2:日本特开2004-207606号公报
可是,难以将晶片在不发生破损的情况下从保护带或WSS的保护部件剥离,特别是,近年来,由于存在晶片的大口径化以及完工厚度变薄的倾向,因此难以将晶片在不发生破损的情况下从保护部件剥离。另外,还存在下述这样的问题:在将晶片从保护部件剥离后,在器件的表面上残留有胶水或粘结剂。
发明内容
本发明是鉴于上述问题而完成的,其目的在于提供一种晶片容易剥离且不会在器件的表面上残留胶水和粘结剂的支承板。
根据技术方案1所述的发明,提供一种支承板,晶片的正面被粘贴在该支承板上,所述晶片在正面具有:形成有多个器件的器件区域;和围绕该器件区域的外周剩余区域,所述支承板的特征在于,所述支承板具备:基板,在该基板的、与待粘贴的晶片的该器件区域相对应的表面区域中形成有凹部,并且,在该基板的、与晶片的该外周剩余区域相对应的区域中形成有环状槽;和柔软部件,该柔软部件被填充在该基板的该凹部中,通过将粘结剂注入该环状槽中,由此经由该粘结剂将晶片粘贴在该支承板的表面上。
根据技术方案2所述的发明,提供一种支承板的形成方法,其是技术方案1所述的支承板的形成方法,其特征在于,所述支承板的形成方法包括:凹部形成步骤,对基板的、与待粘贴的晶片的该器件区域相对应的表面区域进行磨削而形成凹部;环状槽形成步骤,在实施该凹部形成步骤之前或之后,利用切削刀具在基板的与待粘贴的晶片的该外周剩余区域相对应的区域中形成环状槽;以及柔软部件填充步骤,至少在实施了该凹部形成步骤后,将柔软部件填充在该凹部中。。
根据技术方案3所述的发明,提供一种晶片的加工方法,其是使用了技术方案1所述的支承板的加工方法,其特征在于,所述晶片的加工方法包括:粘结剂注入步骤,将粘结剂注入支承板的该环状槽中;粘贴步骤,在实施了该粘结剂注入步骤后,经由该粘结剂将晶片粘贴在该支承板上,以使晶片的该器件区域与该柔软部件抵接;加工步骤,在实施了该粘贴步骤后,经由该支承板保持晶片,并对晶片实施加工;以及粘结剂去除步骤,在实施了该加工步骤后,使切削刀具切入该支承板的与该环状槽相对应的区域,将该粘结剂去除。
由于在本发明的支承板上,通过注入环状槽中的粘结剂仅粘贴晶片的外周剩余区域,因此,不会在器件的表面上残留胶水和粘结剂。由于利用配设于晶片的外周的微量的粘结剂将晶片粘贴在支承板上,因此,晶片容易从支承板剥离。
另外,当通过粘结剂将晶片的外周部分粘贴在支承板上时,晶片的器件区域与支承板的柔软部件抵接,因此,能够防止器件遭受损坏。
附图说明
图1的(A)是第1实施方式的支承板的剖视图,图1的(B)是第2实施方式的支承板的剖视图。
图2是示出凹部形成步骤的立体图。
图3是示出环状槽形成步骤的局部侧剖视图。
图4是示出柔软部件填充步骤的剖视图。
图5是示出粘结剂注入步骤的剖视图。
图6是半导体晶片的立体图。
图7是示出粘贴步骤的剖视图。
图8是示出作为加工步骤的一个例子的磨削步骤的立体图。
图9的(A)是示出粘结剂去除步骤的第1实施方式的局部侧剖视图,图9的(B)是示出粘结剂去除步骤的第2实施方式的局部侧剖视图。
图10是示出粘结剂去除步骤的第3实施方式的局部侧剖视图。
标号说明
10、34:磨轮;
11、11A:支承板;
13:基板;
15:凹部;
17、21:环状槽;
18:磨削单元;
19:柔软部件;
22、22A:切削刀具;
25:半导体晶片;
31:器件区域;
33:外周剩余区域。
具体实施方式
下面,参照附图对本发明的实施方式详细地进行说明。参照图1的(A),示出了本发明的第1实施方式的支承板11的剖视图。支承板11具备:基板13,其在与所粘贴的晶片25(参照图6)的器件区域31相对应的表面区域上形成有凹部15,并且在与晶片25的外周剩余区域33相对应的区域上形成有环状槽17;和柔软部件19,其被填充在基板13的凹部15中。
基板13由硅晶片或玻璃晶片等构成。环状槽17的上正面和一个侧面敞开。柔软部件19例如由海绵橡胶、橡胶等形成。在柔软部件19具有平坦性的情况下,优选使柔软部件19的表面形成为与基板13的表面共面。
可是,在填充在基板13的凹部15中的柔软部件19的表面不具有那么高的平坦性而要实施使柔软部件19的表面平坦化的平坦化步骤的情况下,优选使柔软部件19形成得比基板13的表面高h1。h1例如为2~20μm左右。
参照图1的(B),示出了第2实施方式的支承板11A的剖视图。在本实施方式中,将在与晶片25的外周剩余区域33相对应的区域上形成的环状槽21设置成仅向上方敞开的环状槽。
虽然优选使填充在基板13的凹部15中的柔软部件19的表面形成为与基板13的表面共面,但如上所述,在实施平坦化步骤的情况下,柔软部件19的表面形成得比基板13的表面高2~20μm。
下面,参照图2对凹部形成步骤进行说明。图2中,标号2为磨削装置的磨削单元,其包括:主轴6,其以能够旋转的方式收纳于主轴壳体4中;轮座8,其固定在主轴6的末端;以及磨轮10,其以能够装卸的方式安装于轮座8。磨轮10由下述部分构成:环状的轮基座12;和多个磨具14,它们呈环状粘贴在轮基座12的下端外周部。
在凹部形成步骤中,用磨削装置的卡盘工作台16抽吸并保持基板13,一边使卡盘工作台16绕箭头A所示的方向以例如300rpm旋转,一边使磨轮10绕箭头B所示的方向以例如6000rpm旋转,并且,驱动未图示的磨削单元进给机构使磨具14与基板13接触。然后,使磨轮10以规定的磨削进给速度向下方磨削进给规定的量。
其结果是,在基板13上,与晶片25的器件区域31相对应的区域被磨削去除而形成圆形的凹部15,并且,与晶片25的外周剩余区域33相对应的区域残留。
在实施凹部形成步骤后或实施凹部形成步骤前,实施环状槽形成步骤,在该环状槽形成步骤中,用切削刀具在基板13的与粘贴于支承板11上的晶片25的外周剩余区域33相对应的区域上形成环状槽。
如图3所示,环状槽形成步骤通过切削装置的切削单元18来实施。切削单元18包括:被驱动旋转的主轴20;和安装于主轴20的末端部的切削刀具22。优选的是,切削刀具22是整体上由切削刃构成的垫圈形刀具(washer blade)。
在环状槽形成步骤中,用切削装置的卡盘工作台24抽吸并保持形成有凹部15的基板13,使绕箭头R1方向高速旋转的切削刀具22切入基板13的外周部规定的深度,并使卡盘工作台24绕箭头R2方向低速旋转,由此,如图4所示,在基板13的外周部处形成上表面和一个侧面敞开的环状槽17。关于该环状槽17的形成,也可以使用磨轮代替切削刀具22来形成。
至少在实施了凹部形成步骤后,实施柔软部件填充步骤,在该柔软部件填充步骤中,如图4所示,将柔软部件19填充在基板13的凹部15中。柔软部件19例如对晶片具有紧密贴合性或粘性力,但优选是不具有粘结性的部件。例如可以采用橡胶或海绵橡胶这样的弹性部件。
在将柔软部件19填充在基板13的凹部15中后,可以用例如车削装置来切削柔软部件19的正面以使其平坦化。在这种情况下,如图1的(A)所示,将柔软部件19的表面设定成比基板13的表面高h1。
下面,参照图5至图10,对使用了图1的(A)所示的支承板11的晶片的加工方法进行说明。首先,实施粘结剂注入步骤,在该粘结剂注入步骤中,将粘结剂23注入支承板11的环状槽17中。
该粘结剂注入步骤中,如图5所示,用未图示的卡盘工作台抽吸并保持支承板11,一边使支承板11缓缓地旋转一边从粘结剂供给喷嘴26将粘结剂供给至环状槽17,将粘结剂23注入环状槽17的整周。
关于粘结剂23的注入,可以对环状槽17的整周连续注入,也可以不连续注入。此外,也可以预先将形成为与环状槽相对应的尺寸的片状的粘结剂配设在环状槽中。
下面,参照图6,对粘贴在支承板11上的半导体晶片(以下,存在仅简称为晶片的情况)25进行说明。半导体晶片25例如由厚度为700μm的硅晶片构成,在正面25a上呈格子状形成有多个间隔道(分割预定线)27,并且,在由多个间隔道27划分出的各区域中形成有IC、LSI等器件29。
这样构成的晶片25在其正面25a上具备:形成有器件29的器件区域31;以及围绕器件区域31的外周剩余区域33。另外,在晶片25的外周上形成有圆弧状的倒角部25e。
在实施了图5所示的粘结剂注入步骤后,实施粘贴步骤,在该粘贴步骤中,如图7所示,利用配设在支承板11的环状槽17中的粘结剂23将晶片25粘贴在支承板11上,以使晶片25的器件区域31与柔软部件19抵接。晶片25仅在外周部分处粘贴在支承板11上。
在实施了粘贴步骤后,实施加工步骤,在该加工步骤中,经由支承板11保持晶片25,对晶片25实施加工。加工步骤包括图8所示的那样的磨削步骤。参照图8对磨削步骤进行说明。
在图8中,磨削装置的磨削单元28包括:主轴30,其被驱动进行旋转;轮座32,其固定在主轴30的末端;以及磨轮34,其借助多个螺钉35以能够装卸的方式安装于轮座35。磨轮34由下述部分构成:环状的轮基座36;和多个磨具38,它们呈环状固定安装于轮基座36的下端外周部。
在磨削步骤中,用磨削装置的卡盘工作台40抽吸并保持支承板11,并使晶片25的背面25b露出。然后,一边使卡盘工作台40沿箭头a所示的方向例如以300rpm旋转,一边使磨轮34沿箭头b所示的方向以例如6000rpm旋转,并且,驱动未图示的磨削单元进给机构使磨轮34的磨具38与晶片25的背面25b接触。
然后,使磨轮34以规定的磨削进给速度向下方磨削进给规定的量。一边用接触式或非接触式的厚度测量计测量晶片25的厚度,一边将晶片25磨削成规定的厚度例如100μm。
在此,加工步骤并不限定于图8所示的磨削步骤,例如还包括下面这样的激光加工步骤等:用激光加工装置的卡盘工作台来抽吸并保持支承板11,从晶片25的背面25b侧照射对于晶片25具有透射性的波长的激光束,从而在晶片25的内部形成改性层。
实施图8所示的磨削步骤后,如图9的(A)所示,实施粘结剂去除步骤,在该粘结剂去除步骤中,使绕箭头R1方向高速旋转的切削刀具22切入支承板11的与环状槽17相对应的区域,并使卡盘工作台24绕箭头R2方向低速旋转,由此去除粘结剂23。
关于该粘结剂去除步骤,也可以使用图9的(B)所示的那样的切削单元18A来实施。切削单元18A包括:沿垂直方向伸长的主轴20A;和安装于主轴20A的下端部的切削刀具22。
在本实施方式的粘结剂去除步骤中,使绕箭头R3方向高速旋转的切削刀具22沿箭头A方向移动,并将切削刀具22从侧方切入支承板11的与环状槽17相对应的区域,使卡盘工作台24绕箭头R2方向低速旋转,由此将粘结剂23去除。
参照图10,示出了粘结剂去除步骤的其他实施方式。在本实施方式中,将注入图1的(B)所示的第2实施方式的支承板11A的环状槽21中的粘结剂23去除。
即,一边使厚度较薄的切削刀具22A绕箭头R1方向高速旋转,一边将该切削刀具22A切入支承板11A的与环状槽21相对应的区域,并使卡盘工作台24绕箭头R2方向低速旋转,将环状槽21中的粘结剂23去除。
虽然在图9和图10所示的实施方式中用切削刀具来实施了粘结剂去除步骤,但粘结剂去除步骤并不限于此,也可以利用磨轮或激光束将粘结剂去除。
Claims (1)
1.一种晶片的加工方法,其是形成支承板并使用该支承板对晶片进行加工的加工方法,所述晶片的正面被粘贴在该支承板上,所述晶片在正面具有:形成有多个器件的器件区域;和围绕该器件区域的外周剩余区域,其特征在于,
所述晶片的加工方法包括:
支承板形成步骤,在该支承板形成步骤中,通过以下步骤形成支承板:凹部形成步骤,保持基板,对该基板的、与待粘贴的晶片的该器件区域相对应的表面区域进行磨削,而在该表面区域形成凹部;环状槽形成步骤,在实施该凹部形成步骤之前或之后,利用切削刀具在基板的与待粘贴的晶片的该外周剩余区域相对应的区域中形成上表面和一侧面开放的环状槽;柔软部件填充步骤,在实施了该凹部形成步骤后,将柔软部件填充在该凹部中;
粘结剂注入步骤,将粘结剂注入通过该支承板形成步骤而形成的支承板的该环状槽中;
粘贴步骤,在实施了该粘结剂注入步骤后,经由该粘结剂将晶片粘贴在该支承板上,以使晶片的该器件区域与该柔软部件抵接;
加工步骤,在实施了该粘贴步骤后,经由该支承板保持晶片,并对晶片实施加工;以及
粘结剂去除步骤,在实施了该加工步骤后,使安装在沿垂直方向伸长的主轴的下端部处的切削刀具从侧方切入该支承板的与该环状槽相对应的区域,通过该切削刀具切削该粘结剂而将该粘结剂去除,随着将配设在所述环状槽中的粘接剂去除,晶片被从所述支承板剥离。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014101964A JP6344971B2 (ja) | 2014-05-16 | 2014-05-16 | サポートプレート、サポートプレートの形成方法及びウェーハの加工方法 |
JP2014-101964 | 2014-05-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105097637A CN105097637A (zh) | 2015-11-25 |
CN105097637B true CN105097637B (zh) | 2020-06-12 |
Family
ID=54361919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510254373.6A Active CN105097637B (zh) | 2014-05-16 | 2015-05-15 | 晶片的加工方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20150332952A1 (zh) |
JP (1) | JP6344971B2 (zh) |
KR (1) | KR102216978B1 (zh) |
CN (1) | CN105097637B (zh) |
DE (1) | DE102015208976A1 (zh) |
TW (1) | TWI645501B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10147645B2 (en) * | 2015-09-22 | 2018-12-04 | Nxp Usa, Inc. | Wafer level chip scale package with encapsulant |
DE102016109693B4 (de) * | 2016-05-25 | 2022-10-27 | Infineon Technologies Ag | Verfahren zum Trennen von Halbleiterdies von einem Halbleitersubstrat und Halbleitersubstratanordnung |
TWI744351B (zh) * | 2016-07-09 | 2021-11-01 | 美商應用材料股份有限公司 | 基板載體 |
JP7075268B2 (ja) * | 2018-04-12 | 2022-05-25 | 株式会社ディスコ | 研削装置 |
JP7195758B2 (ja) * | 2018-04-19 | 2022-12-26 | 株式会社ディスコ | Sawデバイスの製造方法 |
JP7266036B2 (ja) * | 2018-07-26 | 2023-04-27 | 日本碍子株式会社 | 仮固定基板、仮固定方法および電子部品の製造方法 |
CN110919295B (zh) * | 2018-09-19 | 2021-02-26 | 宁波江丰电子材料股份有限公司 | 晶圆托盘的加工方法 |
JP7187115B2 (ja) * | 2018-12-04 | 2022-12-12 | 株式会社ディスコ | ウェーハの加工方法 |
US11951569B2 (en) * | 2021-05-12 | 2024-04-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Damage prevention during wafer edge trimming |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009188010A (ja) * | 2008-02-04 | 2009-08-20 | Lintec Corp | 脆質部材用支持体および脆質部材の処理方法 |
CN101866881B (zh) * | 2009-04-20 | 2014-03-19 | 株式会社迪思科 | 光器件晶片的加工方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4669228A (en) * | 1985-11-04 | 1987-06-02 | The Uniroyal Goodrich Tire Company | Tire uniformity abrading method |
JPH05198542A (ja) | 1991-09-02 | 1993-08-06 | Mitsui Toatsu Chem Inc | 半導体ウエハの裏面研削方法および該方法に用いる粘着テープ |
JP2004207606A (ja) | 2002-12-26 | 2004-07-22 | Disco Abrasive Syst Ltd | ウェーハサポートプレート |
JP2005109155A (ja) * | 2003-09-30 | 2005-04-21 | Disco Abrasive Syst Ltd | 半導体ウェーハの加工方法 |
EP2238618B1 (en) * | 2008-01-24 | 2015-07-29 | Brewer Science, Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
JP5338250B2 (ja) * | 2008-08-21 | 2013-11-13 | 株式会社東京精密 | ワーク分離方法及び切削加工装置 |
FR2935536B1 (fr) * | 2008-09-02 | 2010-09-24 | Soitec Silicon On Insulator | Procede de detourage progressif |
US8852391B2 (en) * | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
US8461019B2 (en) * | 2011-07-19 | 2013-06-11 | Disco Corporation | Method of processing device wafer |
US8580655B2 (en) * | 2012-03-02 | 2013-11-12 | Disco Corporation | Processing method for bump-included device wafer |
JP6061590B2 (ja) * | 2012-09-27 | 2017-01-18 | 株式会社ディスコ | 表面保護部材および加工方法 |
-
2014
- 2014-05-16 JP JP2014101964A patent/JP6344971B2/ja active Active
-
2015
- 2015-04-14 TW TW104111926A patent/TWI645501B/zh active
- 2015-04-30 KR KR1020150061374A patent/KR102216978B1/ko active IP Right Grant
- 2015-05-15 DE DE102015208976.2A patent/DE102015208976A1/de active Pending
- 2015-05-15 US US14/713,670 patent/US20150332952A1/en not_active Abandoned
- 2015-05-15 CN CN201510254373.6A patent/CN105097637B/zh active Active
-
2016
- 2016-10-26 US US15/335,247 patent/US9768049B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009188010A (ja) * | 2008-02-04 | 2009-08-20 | Lintec Corp | 脆質部材用支持体および脆質部材の処理方法 |
CN101866881B (zh) * | 2009-04-20 | 2014-03-19 | 株式会社迪思科 | 光器件晶片的加工方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201545269A (zh) | 2015-12-01 |
JP2015220302A (ja) | 2015-12-07 |
US9768049B2 (en) | 2017-09-19 |
JP6344971B2 (ja) | 2018-06-20 |
KR20150131966A (ko) | 2015-11-25 |
US20150332952A1 (en) | 2015-11-19 |
CN105097637A (zh) | 2015-11-25 |
DE102015208976A1 (de) | 2015-11-19 |
KR102216978B1 (ko) | 2021-02-17 |
US20170047241A1 (en) | 2017-02-16 |
TWI645501B (zh) | 2018-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105097637B (zh) | 晶片的加工方法 | |
KR102432506B1 (ko) | 웨이퍼 가공 방법 및 중간 부재 | |
JP6095325B2 (ja) | バンプ付きデバイスウェーハの加工方法 | |
JP2011124266A (ja) | ウエーハの加工方法 | |
JP2015217461A (ja) | ウェーハの加工方法 | |
JP2013021017A (ja) | ウエーハの研削方法 | |
JP2013247135A (ja) | ウエーハの加工方法 | |
JP2012146889A (ja) | ウエーハの研削方法 | |
JP5534793B2 (ja) | ウエーハの加工方法 | |
KR20110063293A (ko) | 웨이퍼 가공 방법 | |
JP2018120916A (ja) | ウェーハの研削方法 | |
JP6230354B2 (ja) | デバイスウェーハの加工方法 | |
JP2012231057A (ja) | ウエーハの加工方法 | |
JP6045426B2 (ja) | ウェーハの転写方法および表面保護部材 | |
JP2013243310A (ja) | 表面保護テープ及びウエーハの加工方法 | |
JP2011124265A (ja) | ウエーハの加工方法 | |
JP5553585B2 (ja) | ウエーハの加工方法 | |
JP2017034128A (ja) | 被加工物の加工方法 | |
JP5545624B2 (ja) | ウエーハの加工方法 | |
JP5946321B2 (ja) | 保護テープ貼着方法 | |
JP2011124264A (ja) | ウエーハの加工方法 | |
JP2010021484A (ja) | ウエーハの研削方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |