CN105074869A - 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 - Google Patents

在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 Download PDF

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Publication number
CN105074869A
CN105074869A CN201480018535.XA CN201480018535A CN105074869A CN 105074869 A CN105074869 A CN 105074869A CN 201480018535 A CN201480018535 A CN 201480018535A CN 105074869 A CN105074869 A CN 105074869A
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CN
China
Prior art keywords
substrate
lip
inches
diameter
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480018535.XA
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English (en)
Chinese (zh)
Inventor
S·T·吴
C·李
H·达奥
A·莱恩
M·D·威尔沃斯
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Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN202010081458.XA priority Critical patent/CN111180305A/zh
Publication of CN105074869A publication Critical patent/CN105074869A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201480018535.XA 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计 Pending CN105074869A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010081458.XA CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361839823P 2013-06-26 2013-06-26
US61/839,823 2013-06-26
PCT/US2014/036213 WO2014209492A1 (en) 2013-06-26 2014-04-30 Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010081458.XA Division CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Publications (1)

Publication Number Publication Date
CN105074869A true CN105074869A (zh) 2015-11-18

Family

ID=52142541

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480018535.XA Pending CN105074869A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计
CN202010081458.XA Pending CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010081458.XA Pending CN111180305A (zh) 2013-06-26 2014-04-30 在icp等离子体处理腔室中用于高产出、衬底极端边缘缺陷减少的单环设计

Country Status (6)

Country Link
US (1) US20160099162A1 (https=)
JP (2) JP6853038B2 (https=)
KR (1) KR102253990B1 (https=)
CN (2) CN105074869A (https=)
TW (1) TWM492915U (https=)
WO (1) WO2014209492A1 (https=)

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US9633862B2 (en) * 2015-08-31 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
JP2020516770A (ja) * 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板端部上のプラズマ密度制御
KR102591660B1 (ko) * 2017-07-24 2023-10-19 램 리써치 코포레이션 이동가능한 에지 링 설계들
WO2019103722A1 (en) 2017-11-21 2019-05-31 Lam Research Corporation Bottom and middle edge rings
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
KR102910385B1 (ko) * 2018-10-18 2026-01-08 램 리써치 코포레이션 베벨 에칭기 (bevel etcher) 를 위한 하부 플라즈마 배제 존 링
JP7541005B2 (ja) * 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
CN114008738B (zh) 2019-06-18 2024-05-24 朗姆研究公司 用于衬底处理系统的缩小直径承载环硬件
WO2021025934A1 (en) * 2019-08-05 2021-02-11 Lam Research Corporation Edge ring systems for substrate processing systems
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
CN115315775A (zh) 2020-03-23 2022-11-08 朗姆研究公司 衬底处理系统中的中环腐蚀补偿
CN116349002A (zh) 2020-10-05 2023-06-27 朗姆研究公司 用于等离子体处理系统的可移动边缘环
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
CN217387074U (zh) 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环

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US20050005859A1 (en) * 2001-12-13 2005-01-13 Akira Koshiishi Ring mechanism, and plasma processing device using the ring mechanism
CN1591793A (zh) * 2003-09-05 2005-03-09 东京毅力科创株式会社 聚焦环和等离子体处理装置
CN101038849A (zh) * 2006-03-17 2007-09-19 东京毅力科创株式会社 等离子体处理装置和方法以及聚焦环
US20080111984A1 (en) * 2004-12-15 2008-05-15 Nikon Corporation Substrate Holding Apparatus, Exposure Apparatus, and Device Fabrication Method
US20100059181A1 (en) * 2008-09-10 2010-03-11 Changhun Lee Low sloped edge ring for plasma processing chamber
KR20100043844A (ko) * 2008-10-21 2010-04-29 주식회사 테스 플라즈마 처리 장치
US20110126984A1 (en) * 2009-12-01 2011-06-02 Lam Research Corporation Edge ring assembly for plasma etching chambers
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TW201324674A (zh) * 2011-12-15 2013-06-16 應用材料股份有限公司 用於極度邊緣可調性的延伸和獨立之射頻驅動陰極基材

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JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
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KR101153118B1 (ko) * 2005-10-12 2012-06-07 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
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DE202010014805U1 (de) * 2009-11-02 2011-02-17 Lam Research Corporation (Delaware Corporation) Heissrandring mit geneigter oberer Oberfläche

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US20050005859A1 (en) * 2001-12-13 2005-01-13 Akira Koshiishi Ring mechanism, and plasma processing device using the ring mechanism
CN1591793A (zh) * 2003-09-05 2005-03-09 东京毅力科创株式会社 聚焦环和等离子体处理装置
CN101162689B (zh) * 2003-09-05 2010-08-18 东京毅力科创株式会社 聚焦环和等离子体处理装置
US20080111984A1 (en) * 2004-12-15 2008-05-15 Nikon Corporation Substrate Holding Apparatus, Exposure Apparatus, and Device Fabrication Method
CN101038849A (zh) * 2006-03-17 2007-09-19 东京毅力科创株式会社 等离子体处理装置和方法以及聚焦环
US20120270166A1 (en) * 2006-12-14 2012-10-25 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
US20100059181A1 (en) * 2008-09-10 2010-03-11 Changhun Lee Low sloped edge ring for plasma processing chamber
KR20100043844A (ko) * 2008-10-21 2010-04-29 주식회사 테스 플라즈마 처리 장치
US20110126984A1 (en) * 2009-12-01 2011-06-02 Lam Research Corporation Edge ring assembly for plasma etching chambers
TW201324674A (zh) * 2011-12-15 2013-06-16 應用材料股份有限公司 用於極度邊緣可調性的延伸和獨立之射頻驅動陰極基材
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111065965A (zh) * 2017-09-13 2020-04-24 株式会社Lg化学 图案化基底的制备方法
CN111065965B (zh) * 2017-09-13 2023-11-03 株式会社Lg化学 图案化基底的制备方法

Also Published As

Publication number Publication date
US20160099162A1 (en) 2016-04-07
KR102253990B1 (ko) 2021-05-18
JP2021068909A (ja) 2021-04-30
CN111180305A (zh) 2020-05-19
TWM492915U (zh) 2015-01-01
WO2014209492A1 (en) 2014-12-31
JP2016530706A (ja) 2016-09-29
JP6853038B2 (ja) 2021-03-31
KR20160023646A (ko) 2016-03-03

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SE01 Entry into force of request for substantive examination
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Application publication date: 20151118