CN105023897B - Method and drilling device for drilling prefabricated packaging structure - Google Patents
Method and drilling device for drilling prefabricated packaging structure Download PDFInfo
- Publication number
- CN105023897B CN105023897B CN201410181115.5A CN201410181115A CN105023897B CN 105023897 B CN105023897 B CN 105023897B CN 201410181115 A CN201410181115 A CN 201410181115A CN 105023897 B CN105023897 B CN 105023897B
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- China
- Prior art keywords
- electric connection
- connection pad
- laser generator
- semiconductor chip
- electronic pads
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Links
- 238000005553 drilling Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004806 packaging method and process Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 239000000084 colloidal system Substances 0.000 claims abstract description 45
- 238000012856 packing Methods 0.000 claims description 40
- 230000037361 pathway Effects 0.000 claims description 38
- 230000005855 radiation Effects 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
Landscapes
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
A prefabricated packaging structure, a method for drilling the prefabricated packaging structure and a drilling device are provided, wherein the prefabricated packaging structure comprises: a semiconductor chip having an active surface and an inactive surface opposed to each other and a side surface connecting the active surface and the inactive surface, the active surface having a plurality of electrode pads thereon; a redistribution layer having a first surface and a second surface opposite to each other, wherein the first surface is disposed on the active surface of the semiconductor chip and electrically connected to the electrode pads, and the first surface of the redistribution layer has a plurality of exposed electrical connection pads around the semiconductor chip; and a packaging colloid formed on the first surface of the redistribution layer to cover the electrical connection pad and the side surface of the semiconductor chip, and having an opening for exposing the non-active surface. The invention can avoid the failure of the electrical connection between the conductive blind hole and the electrical connection pad.
Description
Technical field
The method and drilling equipment that the present invention provides a kind of prefabricated encapsulating structure, drills to it, espespecially one kind can
Prefabricated encapsulating structure, the method to drill to it and the drilling equipment of bore position are accurately positioned using infrared ray.
Background technology
With flourishing for electronic industry, electronic product is also gradually marched toward multi-functional, high-performance and micromation
(miniaturization) trend.In order to meet the package requirements of semiconductor package part micromation, many encapsulation are developed then
Technology.
Fig. 1 is please referred to, is the sectional view of the existing method to drill to prefabricated encapsulating structure 1.Prefabricated encapsulation
Structure 1 includes chip 10, reroutes layer 11, loading plate 13 and packing colloid 12.
Chip 10 as described above has opposite acting surface 10a and non-active face 10b and connection function face 10a and non-work
With the side 10c of face 10b, and there are multiple electrode pads 101 on acting surface 10a, and copper bump can be formed on electronic pads 101
103, solder 105 is formed on copper bump 103.
It is as described above reroute layer (redistribution layer, RDL) 11 have opposite first surface 11a with
Second surface 11b, and connect on the acting surface 10a for being placed in chip 10 and via solder 105 and copper bump with its first surface 11a
103 are electrically connected electronic pads 101, and the first surface 11a for rerouting layer 11 has exposed multiple electricity around chip 10
Property connection gasket 111, wherein reroute layer 11 structure be well known, so it will not be repeated.
In general, solder 105 can be electrically connected by chip 10 by reflow mode with layer 11 is rerouted, to make chip
Electronic pads 101 on 20 acting surface 10a are electrically connected via copper bump 103 and solder 105 and with layer 11 is rerouted, and make weight
The first surface 11a of wiring layer 11 connects on the acting surface 10a for being placed in chip 10, and reroutes the first surface 11a of layer 11 in core
There are the multiple electric connection pads 111 for exposing to first surface 11a around piece 10.
Loading plate 13 as described above is to connect on the second surface 11b for being placed in and rerouting layer 11, and packing colloid 12 is formed
To cover electric connection pad 111 and chip 10 on the first surface 21a for rerouting layer 11.
It is existing when drilling to prefabricated encapsulating structure 1, it is however generally that be the exposure pathways L with laser generator 32
The packing colloid 12 being directly aligned on the electric connection pad 111 of prefabricated encapsulating structure 1, however, due to making packing colloid 12
When in face of the exposure pathways L of laser generator 32, packing colloid 12 covers electric connection pad 111, can not be seen through with optical means
Packing colloid 12 is to identify the exact position of electric connection pad 111, and electric connection pad 111 and electronic pads 101 are also by loading plate
13 coverings, and can not directly judge the exact position of electric connection pad 111 or there is phase between electric connection pad 111 by it
The exact position that the electronic pads 101 of position difference are judged with electric connection pad 111, so as to cause the irradiation road of laser generator 32
Diameter L can not precisely align the packing colloid 12 on electric connection pad 111, therefore it is caused as shown in Fig. 1 in error bit certainly
Packing colloid trepanning (non-icon) is burnt out in the packing colloid 12 at the place of setting, to make then to be formed in the packing colloid trepanning
Conductive blind hole (non-icon) can not correctly be electrically connected electric connection pad 111, therefore cause be electrically connected fail.
Therefore, how to overcome the existing accurate position that electric connection pad can not be found when drilling to prefabricated encapsulating structure
The problem of setting, the actually big project of the one of those skilled in the art.
Invention content
In view of the missing of the above-mentioned prior art, the purpose of the present invention be provide a kind of prefabricated encapsulating structure, to its into
The method and drilling equipment of row drilling, the electric connection failure being avoided that between conductive blind hole and electric connection pad.
The present invention prefabricated encapsulating structure include：With opposite acting surface and non-active face and connect the acting surface with
The semiconductor chip of the side in non-active face has multiple electrode pads on the acting surface；With opposite first surface and second
The rewiring layer on surface, first surface connect on the acting surface for being placed in the semiconductor chip and are electrically connected the electronic pads, and
The first surface of the rewiring layer has exposed multiple electric connection pads around the semiconductor chip；And it is formed in this
It reroutes on the first surface of layer to cover the packing colloid of the side of the electric connection pad and the semiconductor chip, and it has
Expose the opening in the non-active face.
The present invention also provides a kind of drilling equipment, it is used to drill to prefabricated encapsulating structure, the prefabricated encapsulation
Structure includes semiconductor chip, reroutes layer and packing colloid, which has opposite acting surface and non-active face
And the side of the acting surface and non-active face is connected, there are multiple electrode pads, the rewiring layer to have opposite on the acting surface
First surface and second surface, and connect on the acting surface for being placed in the semiconductor chip with its first surface and be electrically connected the electricity
Polar cushion, and the first surface of the rewiring layer has exposed multiple electric connection pads, the envelope around the semiconductor chip
Dress colloid is formed on the first surface of the rewiring layer to cover the side of the electric connection pad and the semiconductor chip, and is had
There is the opening for exposing the non-active face, which includes：Plummer for being placed for the prefabricated encapsulating structure；For
Burn the packing colloid on the electric connection pad, with formed the exposed electric connection pad of multiple correspondences packing colloid trepanning swash
Photogenerator；Ultrared ray generator for irradiating the electronic pads from the non-active surface side；It should by infrared radiation for sensing
The image that electronic pads are presented is to identify the sensing module of the position of the electronic pads；And for by the electronic pads position and
Relative position relation between the electronic pads and electric connection pad judges the control module of the position of the electric connection pad, and makes
The exposure pathways of the laser generator are aligned at the electric connection pad, subsequently to be burnt.
The present invention also provides a kind of methods to drill to prefabricated encapsulating structure, including：Being placed on plummer should
Prefabricated encapsulating structure, the prefabricated encapsulating structure include semiconductor chip, reroute layer and packing colloid, the semiconductor chip
With non-active face and it is connect the side of the acting surface and non-active face with opposite acting surface, there are multiple electricity on the acting surface
Polar cushion, which has opposite first surface and second surface, and is connect with its first surface and be placed in the semiconductor chip
The acting surface on and be electrically connected the electronic pads, and the first surface of the rewiring layer has around the semiconductor chip
Exposed multiple electric connection pads, the packing colloid are formed on the first surface of the rewiring layer to cover the electric connection pad
And the side of the semiconductor chip, and with the opening for exposing the non-active face；With ultrared ray generator from the non-active surface side
Irradiate the electronic pads；With the image that sensing module sensing is presented by the infrared radiation electronic pads, to identify the electronic pads
Position；And using control module by the relative position relation between the position of the electronic pads and the electronic pads and electric connection pad
Judge the position of the electric connection pad, which simultaneously makes the exposure pathways of the laser generator be directed at the electric connection pad
On packing colloid at burnt, to form the packing colloid trepanning of the exposed electric connection pad of multiple correspondences.
The prefabricated encapsulating structure of the present invention, the method to drill to it and drilling equipment are by making packing colloid cover
Its non-active face is simultaneously exposed in the side of semiconductor chip, and using the drilling equipment with ultrared ray generator, with from electronic pads
Position and electronic pads and electric connection pad between predefined relative position judge the position of electric connection pad, and thereby make to swash
Photogenerator exposure pathways alignment electric connection pad on packing colloid and burn, therefore the present invention can avoid conductive blind hole can not
The problem of being correctly electrically connected electric connection pad.
Description of the drawings
Fig. 1 is the sectional view of the existing method to drill to prefabricated encapsulating structure.
Fig. 2 is the sectional view of the prefabricated encapsulating structure of the present invention.
Fig. 3 is the stereogram of the prefabricated encapsulating structure and drilling equipment of the present invention.
Fig. 4 is the flow chart for the method for the present invention to drill to prefabricated encapsulating structure.
Symbol description
1,2 prefabricated encapsulating structure
10 chips
10a, 20a acting surface
The non-active face 10b, 20b
The side 10c, 20c
101,201 electronic pads
103,203 copper bump
105,205 solder
11,21 layer is rerouted
11a, 21a first surface
11b, 21b second surface
111,211 electric connection pad
12,22 packing colloid
13,23 loading plate
20 semiconductor chips
221 openings
3 drilling equipments
31 plummers
32 laser generators
33 ultrared ray generators
L exposure pathways
S401, S402, S403, S404a, S404b, S404c step.
Embodiment
Illustrate that embodiments of the present invention, those skilled in the art can be by this explanations by particular specific embodiment below
The revealed content of book understands the further advantage and effect of the present invention easily.The present invention also can be by other different specific realities
It applies example to be implemented or applied, the various details in this specification may be based on different viewpoints and application, not depart from the present invention
Spirit under carry out it is various modification and change.
Fig. 2 is please referred to, for the sectional view of the prefabricated encapsulating structure 2 of the present invention.Prefabricated encapsulating structure 2 includes partly leading
Body chip 20 reroutes layer 21 and packing colloid 22, each component of prefabricated encapsulating structure 2 of the invention hereinafter with reference to
Fig. 2 and be described in detail.
Semiconductor chip 20 as described above has opposite acting surface 20a and non-active face 20b and connection function face 20a
With the side 20c of non-active face 20b, and on acting surface 20a have multiple electrode pads 201, it is however generally that but not limited to this, partly lead
The main material of body chip 20 can be siliceous semi-conducting material, such as pure silicon or the silicon substrate half doped with germanium, boron, phosphorus and carbon
Conductor material, and copper bump 203 can be formed on electronic pads 201, and solder 205 is formed on copper bump 203.
The layer (Redistribution layer, i.e. RDL) 21 as described above that reroutes has opposite first surface 21a
With second surface 21b, and is connect on the acting surface 20a for being placed in semiconductor chip 20 with its first surface 21a and be electrically connected electrode
Pad 201, and the first surface 21a for rerouting layer 21 has exposed multiple electric connection pads around semiconductor chip 20
211, and can have predefined relative position between electric connection pad 211 and electronic pads 201.The structure for rerouting layer 21 is wide
Well known, so it will not be repeated, however, in details of the words but not limited to this, it reroutes layer 21 and also may include at least line for having storehouse
Road floor (non-marking component symbol), and can be single or multi-layer structure.In general but not limited to this, semiconductor chip 20 can be by
Solder 205 is electrically connected with layer 21 is rerouted by reflow mode, to make the electrode on the acting surface 20a of semiconductor chip 20
Pad 201 is electrically connected via copper bump 203 and solder 205 and with layer 21 is rerouted, and makes the first surface 21a of rewiring layer 21
It connects on the acting surface 20a for being placed in semiconductor chip 20, and reroutes the first surface 21a of layer 21 around semiconductor chip 20
With the multiple electric connection pads 211 for exposing to first surface 21a, particularly but not limited to this, electric connection pad 211 can be embedding
In rewiring layer 21 and expose to first surface 21a.
Packing colloid 22 as described above is formed on the first surface 21a for rerouting layer 21 to cover electric connection pad
211 and semiconductor chip 20 side 20c, and with the opening 221 for exposing non-active face 20b.
In addition, the prefabricated encapsulating structure 2 of the present invention can further include loading plate 23, connects and be placed in the second of rewiring layer 21
On the 21b of surface, and there can be adhesion coating (non-icon) on second surface 21b, so that the second surface 21b for rerouting layer 21 connects and sets
On loading plate 23.
Fig. 3 is please referred to, which is the stereogram of the prefabricated encapsulating structure 2 and drilling equipment 3 of the present invention.Drilling equipment 3
For drilling to above-mentioned prefabricated encapsulating structure 2, and each component of prefabricated encapsulating structure 2 in above retouching in detail
It states, therefore details are not described herein.The present invention drilling equipment 3 include plummer 31, laser generator 32, ultrared ray generator 33,
Sensing module (non-icon) and control module (non-icon), and each component of drilling equipment 3 is detailed hereinafter with reference to Fig. 3
Explanation.
Plummer 31 as described above is used to place for prefabricated encapsulating structure 2, it is however generally that but not limited to this, plummer
Can have the structures (all non-icon) such as the fixed prefabricated jig of encapsulating structure 2, such as fixture, sucker or recess portion on 31, also,
The composing structure that the prefabricated encapsulating structure 2 being positioned on plummer 31 can be made of by one multiple prefabricated encapsulating structures 2
(not indicating).
Laser generator 32 as described above is used to burn the packing colloid 22 on electric connection pad 211 as shown in Figure 2,
To form the packing colloid trepanning (non-icon) of the exposed electric connection pad of multiple correspondences 211.Specifically but not limited to this, laser
The inside of generator 32 generate laser and along a particular path light extraction, it is in one embodiment of this invention, straight by laser generator 32
The particular path for picking out light may be defined as the exposure pathways L of dotted line expression, and exposure pathways L can be perpendicular to rerouting the of layer 21
It is directed to one surface 21a electric connection pad 211 from 22 side of packing colloid, and in another embodiment of the invention, it is produced by laser
The particular path of 32 direct light extraction of raw device can be directed to photograph via the optical module (non-icon) of such as lens and speculum etc.
Rays diameter L, and in another embodiment of the invention, the laser that laser generator 32 is sent out can by camera lens (non-icon) and
Electric connection pad 211 and the packing colloid 22 of focusing thereon are directed on exposure pathways L.
Ultrared ray generator 33 as described above is used for from the sides non-active face 20b irradiation electrode pad 201, specifically but not
It is limited to this, since for electronic pads 201, the wavelength of infrared ray is high reflection, and for silicon-based semiconductor material, infrared ray
Wavelength be high-penetration, therefore infrared ray can be irradiated by the sides non-active face 20b and be penetrated the silicon-based semiconductor material of semiconductor chip 20
Material, and reflected by electronic pads 201, to obtain the infrared reflection image of electronic pads 201, to determine the position of electronic pads 201.
Again specifically but not limited to this, in one embodiment of this invention, by the infrared link of 33 direct light extraction of ultrared ray generator
Diameter can be parallel but be overlapped in exposure pathways L (i.e. the light beam of ultrared ray generator and exposure pathways L are separated), in the another of the present invention
It, can be via the optics of such as lens and speculum etc. by the infrared ray path of 33 direct light extraction of ultrared ray generator in one embodiment
Component (non-icon) and be directed to parallel but be not overlapped in exposure pathways L, alternatively, by the red of 33 direct light extraction of ultrared ray generator
Outer thread path can be coupled via the optical module (non-icon) of such as lens and speculum etc. with exposure pathways L, however, infrared
The mode of 33 irradiation electrode pad 201 of line generator can still change according to different designs and be not only restricted to above-mentioned illustrative implementation
Example.
Sensing module (non-icon) as described above is used to sense the image presented by infrared radiation electronic pads 201,
To identify the position of electronic pads 201, it is however generally that but not limited to this, which can be by the camera lens for receiving infrared-ray
The infrared ray of reflection is received, and is imaged for the position of automatic or manual identification electronic pads 201.In addition, in other implementations
In example, which can be set together with ultrared ray generator 33, alternatively, the sensing module can be with ultrared ray generator 33
It is provided separately, and the detailed set-up mode of such sensing module is well known, and is repeated no more.
Control module (non-icon) as described above be used for by electronic pads 201 position and electronic pads 201 with electrically connect
Relative position relation between connection pad 211 judges the position of electric connection pad 211, and makes the exposure pathways L of laser generator 32
It is aligned at electric connection pad 211, subsequently to be burnt.Specifically but not limited to this, which can receive by the sense
The signal of the position for the electronic pads 201 that module is identified is surveyed, and coordinates known or preset electronic pads 201 and electric connection pad
Relative position relation between 211 judges the position of electric connection pad 211, and makes the exposure pathways L alignments of laser generator 32
Electric connection pad 211 and then burn the packing colloid 22 on electric connection pad 211.
Again specifically but not limited to this, make the method for the exposure pathways L alignment electric connection pads 211 of laser generator 32
There are following three kinds of embodiments：The position of plummer 31 in one embodiment is to fix, and the control module is for moving laser
The exposure pathways L of generator 32 is so that it is directed at electric connection pad 211；The irradiation of laser generator 32 in its another embodiment
Path L is to fix, which is used to move plummer 31 so that the exposure pathways L alignments of laser generator 32 are electrically connected
Pad 211；The exposure pathways L and plummer 31 of laser generator 32 in its another embodiment are all movable, and the control module
For moving the exposure pathways L of laser generator 32 with plummer 31 so that the exposure pathways L of laser generator 32 is aligned electrically
Connection gasket 211, and the mode of the exposure pathways L of the mobile laser generator 32 of three of the above embodiment can be directly mobile laser
Generator 32 makes optical module start to move exposure pathways L.
Fig. 4 is please referred to, for the flow chart for the method for the present invention to drill to prefabricated encapsulating structure.In step
S401, places prefabricated encapsulating structure 2 on the plummer 31 of drilling equipment 3, and drilling equipment 3 and prefabricated encapsulating structure 2
Each component in being described in detail above, therefore details are not described herein, electronic pads 201 and the electricity of encapsulating structure 2 prefabricated at this time
Relative position relation between property connection gasket 211 is known.
In step S402, with ultrared ray generator 33 from the sides non-active face 20b irradiation electrode pad 211, wherein along or it is flat
Row in the light beam that exposure pathways L be collimation or the infrared ray spread by the sides non-active face 20b irradiation electrode pad 201, with
The silicon-based semiconductor material of semiconductor chip 20 is irradiated by the sides non-active face 20b and penetrated, and is reflected by electronic pads 201 and is worn again
Saturating silicon-based semiconductor material, to obtain the infrared reflection image of electronic pads 201, and the set-up mode of ultrared ray generator 33
In being described in detail above, therefore details are not described herein.
In step S403, the image presented by infrared ray irradiation electrode pad 201 is sensed with sensing module, to identify electricity
The position of polar cushion 201, and then be imaged for automatic or manual identified electronic pads by the infrared ray of the reflection received
201 position subsequently enters step S404a, step S404b or step S404c.
In step S404a to S404c, using control module by the position of electronic pads 201 and electronic pads 201 and electrically
Relative position relation between connection gasket 211 judges the position of electric connection pad 211, which simultaneously makes laser generator 32
Exposure pathways L alignment electric connection pad 211 on packing colloid 22 and burn, to form the exposed electric connection pad of multiple correspondences
211 packing colloid trepanning (non-icon).Specifically but not limited to this, which can receive is known by the sensing module
The signal of the position of other electronic pads 201, and closed by the relative position between the electronic pads of setting 201 and electric connection pad 211
System judges the position of electric connection pad 211, and makes the exposure pathways L alignment electric connection pads 211 of laser generator 32 and burn
The packing colloid 22 to burn on electric connection pad 211.And wherein, make the exposure pathways L alignment electric connection pads of laser generator 32
211 method has following three kinds of embodiments, the i.e. person as described in step S404a to S404c：In step S404a, plummer 31
Position be fix, and the control module be used for move laser generator 32 exposure pathways L so that its be aligned electric connection pad
It is burnt after 211；In step S404b, the exposure pathways L of laser generator 32 is to fix, and the control module is for moving
Plummer 31 after the exposure pathways L alignment electric connection pads 211 of the laser generator 32 so as to be burnt；In step S404c
In, the exposure pathways L and plummer 31 of laser generator 32 are all movable, and the control module is for moving the laser generator
32 exposure pathways L is with plummer 31 so that the exposure pathways L of laser generator 32 is burnt after being directed at electric connection pad 211
It burns, and the mode of the exposure pathways L of the mobile laser generator 32 of above three step (i.e. S404a, 404b and S404b) can be straight
It connects mobile laser generator 32 or makes optical module start to move exposure pathways L.
In conclusion compared to prior art, since the present invention by the side of covering semiconductor chip and exposes non-work
With the relative position between the packing colloid in face, ultrared ray generator and known electronic pads and electric connection pad, and can be by red
Outer line generator irradiates semiconductor chip and obtains its electrode pad position, with by opposite between electronic pads and electric connection pad
Position and the position for obtaining electric connection pad, and thereby the exposure pathways of laser generator is made to be directed at the encapsulation at electric connection pad
At colloid, subsequently to be burnt, therefore the present invention can avoid because electric connection pad be packaged colloid covering caused by can not essence
Really judge the position of electric connection pad so as to cause the not accurate problem of packing colloid position of opening.
Above-described embodiment is only used for that the principle of the present invention and its effect is illustrated, and is not intended to limit the present invention.Appoint
What those skilled in the art can without violating the spirit and scope of the present invention modify to above-described embodiment.Therefore originally
The rights protection scope of invention, should be as listed in the claims.
Claims (10)
1. a kind of drilling equipment is used to drill to prefabricated encapsulating structure, which includes semiconductor
Chip reroutes layer and packing colloid, which has opposite acting surface and non-active face and connect the acting surface
With the side in non-active face, there are on the acting surface multiple electrode pads, the rewiring layer to have opposite first surface and second
Surface, and the electronic pads are connect on the acting surface for being placed in the semiconductor chip and are electrically connected with its first surface, and the heavy cloth
There are the first surface of line layer exposed multiple electric connection pads, the packing colloid to be formed in this around the semiconductor chip
It reroutes to cover the side of the electric connection pad and the semiconductor chip on the first surface of layer, and non-active with this is exposed
The opening in face, the drilling equipment include：
Plummer is used to place for the prefabricated encapsulating structure；
Laser generator is used to burn the packing colloid on the electric connection pad, is electrically connected with forming exposed this of multiple correspondences
The packing colloid trepanning of connection pad；
Ultrared ray generator is used to irradiate the electronic pads from the non-active surface side；
Sensing module is used to sense the image presented by the infrared radiation electronic pads, to identify the position of the electronic pads；
And
Control module, be used for by the relative position relation between the position of the electronic pads and the electronic pads and electric connection pad come
Judge the position of the electric connection pad, and the exposure pathways of the laser generator is made to be aligned at the electric connection pad, after progress
It is continuous to burn.
2. drilling equipment as described in claim 1, which is characterized in that the position of the plummer is to fix, which uses
In the mobile laser generator, so that it is directed at the electric connection pad.
3. drilling equipment as described in claim 1, which is characterized in that the laser generator is to fix, which is used for
Mobile plummer, so that the laser generator is directed at the electric connection pad.
4. drilling equipment as described in claim 1, which is characterized in that the control module is for moving the laser generator and holding
Microscope carrier, so that the laser generator is directed at the electric connection pad.
5. drilling equipment as described in claim 1, which is characterized in that the prefabricated encapsulating structure further includes loading plate, is connect
It is placed on the second surface of the rewiring layer.
6. a kind of method to drill to prefabricated encapsulating structure, including：
The prefabricated encapsulating structure is placed on plummer, the prefabricated encapsulating structure include semiconductor chip, reroute layer with
Packing colloid, the semiconductor chip have opposite acting surface with non-active face and connect the side of the acting surface and non-active face
Face, has multiple electrode pads on the acting surface, which has opposite a first surface and second surface, and with its first
Surface connects on the acting surface for being placed in the semiconductor chip and is electrically connected the electronic pads, and the first surface of the rewiring layer exists
There are exposed multiple electric connection pads, the packing colloid to be formed in the first table of the rewiring layer around the semiconductor chip
To cover the side of the electric connection pad and the semiconductor chip on face, and with the opening for exposing the non-active face；
With ultrared ray generator the electronic pads are irradiated from the non-active surface side；
With the image that sensing module sensing is presented by the infrared radiation electronic pads, to identify the position of the electronic pads；And
Sentenced by the relative position relation between the position of the electronic pads and the electronic pads and electric connection pad using control module
The position of the disconnected electric connection pad, the control module simultaneously make the exposure pathways of laser generator be directed at the envelope on the electric connection pad
It is burnt at dress colloid, to form the packing colloid trepanning of the corresponding exposed electric connection pad.
7. the method to drill as claimed in claim 6 to prefabricated encapsulating structure, which is characterized in that the position of the plummer
It is set to fixation, the control module is for moving the laser generator, so that it is directed at the electric connection pad.
8. the method to drill as claimed in claim 6 to prefabricated encapsulating structure, which is characterized in that the laser generator
For fixation, the control module is for moving the plummer, so that the laser generator is directed at the electric connection pad.
9. the method to drill as claimed in claim 6 to prefabricated encapsulating structure, which is characterized in that the control module is used
In the mobile laser generator and plummer, so that the laser generator is directed at the electric connection pad.
10. the method to drill as claimed in claim 6 to prefabricated encapsulating structure, which is characterized in that the prefabricated envelope
Assembling structure further includes loading plate, connects and is placed on the second surface of the rewiring layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103114636A TWI556365B (en) | 2014-04-23 | 2014-04-23 | Prefabricated package structure, method for drilling thereto and drilling device |
| TW103114636 | 2014-04-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105023897A CN105023897A (en) | 2015-11-04 |
| CN105023897B true CN105023897B (en) | 2018-08-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410181115.5A Active CN105023897B (en) | 2014-04-23 | 2014-04-30 | Method and drilling device for drilling prefabricated packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105023897B (en) |
| TW (1) | TWI556365B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914157A (en) * | 2016-04-28 | 2016-08-31 | 合肥祖安投资合伙企业(有限合伙) | Chip package technology and chip package structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677629A (en) * | 2005-03-10 | 2005-10-05 | 威盛电子股份有限公司 | Package process of chip built-in type |
| TW201029125A (en) * | 2009-01-16 | 2010-08-01 | Phoenix Prec Technology Corp | Packaging substrate having semiconductor chip embedded therein, and method for manufacturing the same |
| WO2013037102A1 (en) * | 2011-09-13 | 2013-03-21 | 深南电路有限公司 | Encapsulation method for embedding chip into substrate and structure thereof |
| CN103594418A (en) * | 2012-08-13 | 2014-02-19 | 矽品精密工业股份有限公司 | Semiconductor package and fabrication method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9266192B2 (en) * | 2012-05-29 | 2016-02-23 | Electro Scientific Industries, Inc. | Method and apparatus for processing workpieces |
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2014
- 2014-04-23 TW TW103114636A patent/TWI556365B/en active
- 2014-04-30 CN CN201410181115.5A patent/CN105023897B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677629A (en) * | 2005-03-10 | 2005-10-05 | 威盛电子股份有限公司 | Package process of chip built-in type |
| TW201029125A (en) * | 2009-01-16 | 2010-08-01 | Phoenix Prec Technology Corp | Packaging substrate having semiconductor chip embedded therein, and method for manufacturing the same |
| WO2013037102A1 (en) * | 2011-09-13 | 2013-03-21 | 深南电路有限公司 | Encapsulation method for embedding chip into substrate and structure thereof |
| CN103594418A (en) * | 2012-08-13 | 2014-02-19 | 矽品精密工业股份有限公司 | Semiconductor package and fabrication method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105023897A (en) | 2015-11-04 |
| TWI556365B (en) | 2016-11-01 |
| TW201541567A (en) | 2015-11-01 |
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