CN105008579B - ZnO‑Al2O3‑MgO溅射靶及其制备方法 - Google Patents

ZnO‑Al2O3‑MgO溅射靶及其制备方法 Download PDF

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Publication number
CN105008579B
CN105008579B CN201480009233.6A CN201480009233A CN105008579B CN 105008579 B CN105008579 B CN 105008579B CN 201480009233 A CN201480009233 A CN 201480009233A CN 105008579 B CN105008579 B CN 105008579B
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mgo
zno
powder
less
sputtering targets
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CN105008579A (zh
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安德列亚斯·赫尔佐克
克里斯托夫·西蒙斯
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Wan Tengrong Advanced Materials Germany Ltd
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Heraeus Materials Technology GmbH and Co KG
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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CN201480009233.6A 2013-02-18 2014-02-18 ZnO‑Al2O3‑MgO溅射靶及其制备方法 Expired - Fee Related CN105008579B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13155587.2A EP2767610B1 (en) 2013-02-18 2013-02-18 ZnO-Al2O3-MgO sputtering target and method for the production thereof
EP13155587.2 2013-02-18
PCT/EP2014/053128 WO2014125122A1 (en) 2013-02-18 2014-02-18 Zno-al2o3-mgo sputtering target and method for the production thereof

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CN105008579A CN105008579A (zh) 2015-10-28
CN105008579B true CN105008579B (zh) 2017-10-10

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EP (1) EP2767610B1 (https=)
JP (1) JP2016510363A (https=)
CN (1) CN105008579B (https=)
WO (1) WO2014125122A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106187100B (zh) * 2015-05-04 2019-02-12 清华大学 溅射靶及其制备方法
CN108559959A (zh) * 2018-01-12 2018-09-21 基迈克材料科技（苏州）有限公司 复合金属氧化物靶材材料、靶材及靶材材料、靶材的制备方法
CN109133910B (zh) * 2018-09-13 2021-07-20 先导薄膜材料（广东）有限公司 Zmo靶材的生产方法
US11434172B2 (en) * 2018-10-31 2022-09-06 Idemitsu Kosan Co., Ltd. Sintered body
US20220356118A1 (en) * 2019-06-27 2022-11-10 Idemitsu Kosan Co.,Ltd. Oxide sintered body
CN113073302B (zh) * 2021-04-09 2023-02-14 基迈克材料科技（苏州）有限公司 Zmo靶材及其制备方法
CN114477994A (zh) * 2022-01-25 2022-05-13 广东爱晟电子科技有限公司 一种大功率陶瓷芯片电阻及其材料和制备

Citations (5)

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Publication number Priority date Publication date Assignee Title
CN101189358A (zh) * 2005-05-30 2008-05-28 日矿金属株式会社 溅射靶及其制造方法
CN101277910A (zh) * 2005-09-29 2008-10-01 H.C.施塔克公司 溅射靶、低电阻率透明导电膜、该膜的制备方法及用于该方法的组合物
CN101460425A (zh) * 2006-06-08 2009-06-17 住友金属矿山株式会社 氧化物烧结体、靶、用它制得的透明导电膜以及透明导电性基材
US20110114944A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
CN102666910A (zh) * 2009-12-16 2012-09-12 三菱综合材料株式会社 透明导电膜、利用该透明导电膜的太阳能电池及用于形成透明导电膜的溅射靶以及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8865028B2 (en) * 2009-08-27 2014-10-21 Amotech Co. Ltd. ZnO-based varistor composition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101189358A (zh) * 2005-05-30 2008-05-28 日矿金属株式会社 溅射靶及其制造方法
CN101277910A (zh) * 2005-09-29 2008-10-01 H.C.施塔克公司 溅射靶、低电阻率透明导电膜、该膜的制备方法及用于该方法的组合物
CN101460425A (zh) * 2006-06-08 2009-06-17 住友金属矿山株式会社 氧化物烧结体、靶、用它制得的透明导电膜以及透明导电性基材
US20110114944A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
CN102666910A (zh) * 2009-12-16 2012-09-12 三菱综合材料株式会社 透明导电膜、利用该透明导电膜的太阳能电池及用于形成透明导电膜的溅射靶以及其制造方法

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WO2014125122A1 (en) 2014-08-21
JP2016510363A (ja) 2016-04-07
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CN105008579A (zh) 2015-10-28
EP2767610B1 (en) 2015-12-30

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