CN105006516B - A kind of LED heat abstractor - Google Patents
A kind of LED heat abstractor Download PDFInfo
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- CN105006516B CN105006516B CN201510470821.6A CN201510470821A CN105006516B CN 105006516 B CN105006516 B CN 105006516B CN 201510470821 A CN201510470821 A CN 201510470821A CN 105006516 B CN105006516 B CN 105006516B
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- 239000011104 metalized film Substances 0.000 claims abstract description 39
- 239000000853 adhesive Substances 0.000 claims abstract description 30
- 230000001070 adhesive effect Effects 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims abstract description 25
- 235000014443 Pyrus communis Nutrition 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 24
- 238000007788 roughening Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 241000220324 Pyrus Species 0.000 claims 5
- 235000021017 pears Nutrition 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- 238000005538 encapsulation Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The invention provides a kind of LED heat abstractor, belongs to LED encapsulation technologies field.It solves the technical problem such as radiating effect is bad of existing LED.This LED heat abstractor includes cooling stand and LED chip, LED chip is on cooling stand, it is characterized in that, heat-conducting plate is fixed with cooling stand, the lower surface of heat-conducting plate is fixedly connected and is bonded with the upper surface of cooling stand, heat abstractor also includes metallized film, the lower surface of metallized film is fixedly connected and is bonded with the upper surface of heat-conducting plate, LED chip is fixedly connected with the upper surface of metallized film by crystal-bonding adhesive, and the area of the upper surface of metallized film is more than the area of the lower surface of LED chip.Invention increases the area of dissipation of LED chip, the temperature of LED chip preferably by the heat derives of LED chip, and distribute, can be effectively reduced, improves LED thermal diffusivity.
Description
Technical field
The invention belongs to LED encapsulation technologies field, is related to a kind of LED heat abstractor.
Background technology
LED (light emitting diode) encapsulates the encapsulation for referring to luminescence chip, has relatively big difference compared to integrated antenna package.LED
Encapsulation be not only required to protect wick, but also will being capable of printing opacity.So LED encapsulation has special want to encapsulating material
Ask.
Into after 21 century, LED high efficiency, super brightness, panchromaticization continue to develop innovation, and red, orange LED light effect is
Reach 100Im/W, green LED is 501m/W, and single LED luminous flux also reaches tens of Im.LED chip and encapsulation no longer follow biography
The design concept of system and manufacture production model, in terms of the light output of increase chip, research and development are not limited only to miscellaneous in change material
Prime number amount, lattice defect and dislocation improve internal efficiency, meanwhile, how to improve tube core and encapsulation internal structure, strengthen in LED
Portion produces the probability of photon outgoing, improves light efficiency, solves radiating, takes light and heat sink optimization design, improvement optical property, accelerometer
Face attachmentization SMD processes are even more the main flow direction of industrial circle research and development.
Such as a kind of LED encapsulation method of disclosure of the invention of Application No. " 201410131483.9 ", for encapsulating LED devices
Part, the LED component include substrate, installation LED chip on the substrate and the lens being wrapped in outside the LED chip,
Comprise the following steps：First time dispensing is carried out above LED chip, being then cooled to room temperature makes it be formed by curing basal layer, the
Once dispensing amount for dispensing glue at least wraps up LED chip but and does not spill over substrate edges；It is repeated several times and performs following sub-step in institute
State and stack layer is formed on basal layer to collectively form lens with basal layer：Dispensing again is carried out above the basal layer summit,
Then being cooled to room temperature makes its solidification.Although the inventive method can also control lens shaped well in the case where not needing mould
Shape, the lens compared with large ratio of height to width are formed, but the LED thermal diffusivities after encapsulation are not high, can not tackle higher and higher radiating requirements.
The content of the invention
The present invention is directed to above mentioned problem existing for existing technology, there is provided a kind of LED heat abstractor, the present invention to be solved
Technical problem certainly is：How LED thermal diffusivity is improved.
The purpose of the present invention can be realized by following technical proposal：
A kind of LED heat abstractor, the heat abstractor include cooling stand and LED chip, and the LED chip is located at institute
State on cooling stand, it is characterised in that heat-conducting plate is fixed with the cooling stand, the lower surface of the heat-conducting plate dissipates with described
The upper surface of hot support is fixedly connected and is bonded, and the heat abstractor also includes metallized film, the metallized film
Lower surface is fixedly connected and is bonded with the upper surface of the heat-conducting plate, and the upper surface of the LED chip and metallized film leads to
Cross crystal-bonding adhesive to be fixedly connected, the area of the upper surface of the metallized film is more than the area of the lower surface of the LED chip.
Its operation principle is as follows：Above-mentioned cooling stand is made up of the preferable material of thermal conductivity, and above-mentioned crystal-bonding adhesive has good
Heat resistance and thermal conductivity, above-mentioned heat-conducting plate passes through insulation processing, has preferable insulating properties；LED basic structure is one
Individual P-N junction, when electric current is by LED original papers, the temperature of P-N junction can rise, because the size of LED chip is smaller, the temperature of P-N junction
Degree is similar to the temperature of LED chip, and the temperature of LED chip can be passed to metal by this LED heat abstractor by crystal-bonding adhesive
Change film, then because the area of the upper surface of metallized film is more than the area of the lower surface of LED chip, and metallized film
With good thermal diffusivity and thermal conductivity, the heat part that crystal-bonding adhesive passes over gives out from the upper surface of metallized film
Go, another part passes to heat-conducting plate from the lower surface of metallized film, and passes to what is be bonded with heat-conducting plate by heat-conducting plate
Cooling stand, and distributed from the surface of cooling stand, the design of the heat abstractor increases the area of dissipation of LED chip,
The temperature of LED chip preferably by the heat derives of LED chip, and distribute, can be effectively reduced, improves dissipating for LED
It is hot.
In a kind of above-mentioned LED heat abstractor, the cooling stand dissipates including first support, second support, first
Hot plate and the second heat sink, the first support and second support are in the same plane and have space between the two, described
First support and second support are connected by heat-conducting plate, and first heat sink is fixed on the upper surface of first support and is located at institute
The outside of first support is stated, second heat sink is fixed on the upper surface of second support and positioned at the outer of the second support
Side.It is because both can be made of an electrically conducting material, if both are straight to have space between above-mentioned first support and second support
Contact, then electric current directly by first support and second support by forming short circuit, producing dangerous hidden danger；First heat sink
With the further increasing heat radiation area that is designed to of the second heat sink, radiating effect is improved；Alternatively, it is above-mentioned
First heat sink and the second heat sink can also be the structures of other increase area of dissipations such as fin or projection.
In a kind of above-mentioned LED heat abstractor, the first support is provided with cathode contact, the cathode contact position
Between first heat sink and heat-conducting plate, the second support is provided with cathode contact, and the cathode contact is positioned at described
Between second heat sink and the heat-conducting plate, the LED chip is electric with the cathode contact and cathode contact respectively by wire
Connection.The setting of above-mentioned cathode contact and cathode contact not only makes this construction for heat radiating device compacter, and cathode contact and
Caused heat also can rapidly be exhaled by cooling stand on cathode contact, further increase LED radiating effect
Fruit；Alternatively, the position of the cathode contact and the cathode contact can exchange.
In a kind of above-mentioned LED heat abstractor, the metallized film includes film layer, pear skin layer and metal level,
The pear skin layer is formed by film layer roughening treatment, and the pear skin layer is between film layer and metal level, the metal level
Lower surface be bonded with the upper surface of the pear skin layer, the film layer is connected with the heat-conducting plate, the upper table of the metal level
Face is fixed with crystal-bonding adhesive, the crystal-bonding adhesive by the thickness of the lower surface covering of the LED chip and crystal-bonding adhesive 5 μm -10 μm it
Between.Film layer forms the equally rough pear skin layer in similar pear skin surface after roughening treatment, and pear skin layer is designed to
The firmness that increase metal level is connected with pear skin layer；Crystal-bonding adhesive by the covering of the lower surface of LED chip be in order to increase LED chip with
The connection area of crystal-bonding adhesive, make the more efficient of heat transfer between the two；In the range of the thickness of crystal-bonding adhesive is somebody's turn to do at 5 μm -10 μm
When, the metal level of metallized film and the degree of being connected firmly of LED chip are preferable, while the heat transference efficiency of crystal-bonding adhesive is also higher,
When the thickness of crystal-bonding adhesive is 7 μm, effect is best.
In a kind of above-mentioned LED heat abstractor, the thickness of the film layer is more than or equal to 20 μm, the pear skin layer
The scope of thickness is 10 μm -20 μm, and the scope of the thickness of the metal level is 10 μm -20 μm.The thickness of film layer is more than or equal to
At 20 μm, film will not deform when being metallized；The scope of the thickness of pear skin layer be 10 μm -20 μm when, metal level with
The degree of being connected firmly of pear skin layer is preferable, wherein optimal when the thickness of pear skin layer is 15 μm；The scope of the thickness of metal level is 10 μ
At m-20 μm, the thermal conductivity of metallized film and anti-breakdown effect are preferable, when the thickness of metal level is 15 μm optimal.
Compared with prior art, advantages of the present invention is as follows：
1st, the temperature of LED chip can be passed to metallized film, Ran Houyou by this LED heat abstractor by crystal-bonding adhesive
Area in the upper surface of metallized film is more than the area of the lower surface of LED chip, and metallized film has good dissipate
Hot and thermal conductivity, the heat part that crystal-bonding adhesive passes over distribute from the upper surface of metallized film, another part
Heat-conducting plate is passed to from the lower surface of metallized film, and the cooling stand being bonded with heat-conducting plate is passed to by heat-conducting plate, and
Distributed from the surface of cooling stand, the design of the heat abstractor increases the area of dissipation of LED chip, can preferably by
The heat derives of LED chip, and distribute, the temperature of LED chip is effectively reduced, improves LED thermal diffusivity；
2nd, the first heat sink and the second heat sink are designed to further increasing heat radiation area, improve radiating effect.
Brief description of the drawings
Fig. 1 is the structural representation of this LED heat abstractor.
Fig. 2 is the partial sectional view of this metallized film.
In figure, 1 cooling stand；2LED chips；3 heat-conducting plates；4 metallized films；5 crystal-bonding adhesives；6 first supports；7 second
Frame；8 first heat sinks；9 second heat sinks；10 cathode contacts；11 cathode contacts；12 wires；13 film layers；14 pear skin layers；15
Metal level.
Embodiment
It is the specific embodiment of the present invention and with reference to accompanying drawing below, technical scheme is further described,
But the present invention is not limited to these embodiments.
LED basic structure is a P-N junction, and when electric current passes through LED element, the temperature of P-N junction can rise, due to
The size of LED chip 2 is smaller, and the temperature of P-N junction is similar to the temperature of LED chip 2, and this LED heat abstractor can be effective
Thermal diffusivity is improved, reduces the operating temperature of LED chip 2.
As depicted in figs. 1 and 2, this LED heat abstractor includes cooling stand 1, LED chip 2 and metallized film 4, this
Metallized film 4 in embodiment is made up of polyimides or polyimide modified material, the metal made of polyimides
Changing film 4 has excellent heat-resisting quantity (high temperature resistant is up to more than 400 DEG C), electric insulating quality and radiation resistance, and high temperature is certainly
The advantages that viscous sealing.Cooling stand 1 is made up of the preferable material of thermal conductivity, is made of copper in the present embodiment, radiating branch
Heat-conducting plate 3 is fixed with frame 1, the lower surface of metallized film 4 is fixedly connected and is bonded with the upper surface of heat-conducting plate 3, LED core
Piece 2 is fixedly connected with the upper surface of metallized film 4 by crystal-bonding adhesive 5, and the crystal-bonding adhesive 5 has good heat resistance and heat conduction
Property, the area of the upper surface of metallized film 4 is more than the area of the lower surface of LED chip 2.
As shown in figure 1, cooling stand 1 includes first support 6, second support 7, the first heat sink 8 and the second heat sink 9,
First support 6 and second support 7 are in the same plane and have space between the two, the first support 6 and second support 7 it
Between there is space to be because both can be made of an electrically conducting material, if both directly contacts, electric current directly passes through first
Frame 6 and second support 7 are by forming short circuit, producing dangerous hidden danger；The lower surface of heat-conducting plate 3 upper table with first support 6 respectively
Face is fixedly connected and is bonded with the upper surface of second support 7, and this is designed to the heat transfer by heat-conducting plate 3 to first support
6 and second support 7, increasing heat radiation area, improve LED radiating effect.
In this heat abstractor, the first heat sink 8 is fixed on the upper surface of first support 6 and is located at the outside of first support 6,
First support 6 is provided with cathode contact 10, and cathode contact 10 is between the first heat sink 8 and heat-conducting plate 3；Second heat sink 9
It is fixed on the upper surface of second support 7 and is provided with cathode contact 11 positioned at the outside of second support 7, second support 7, negative pole touches
Point 11 between the second heat sink 9 and heat-conducting plate 3, LED chip 2 by wire 12 respectively with cathode contact 10 and cathode contact
11 electrical connections；Heat-conducting plate 3 passes through insulation processing, has preferable insulating properties, therefore electric current will not enter heat-conducting plate 3 and be touched from positive pole
Point 10 flows to cathode contact 11, and in the present embodiment, heat-conducting plate 3 is made by gold-tin alloy material；First heat sink 8 and
Two heat sinks 9 are designed to further increasing heat radiation area, improve radiating effect, alternatively, above-mentioned the
One heat sink 8 and the second heat sink 9 can also be the structures of other increase area of dissipations such as fin or projection；Cathode contact
10 and the setting of cathode contact 11 not only make this construction for heat radiating device compacter, and on cathode contact 10 and cathode contact 11
Caused heat also can rapidly be exhaled by cooling stand 1, further increase LED radiating effect；As another
The position of a kind of scheme, cathode contact 10 and cathode contact 11 can exchange.
As shown in Fig. 2 metallized film 4 includes film layer 13, pear skin layer 14 and metal level 15, the thickness of film layer 13 is big
In equal to 20 μm, because when the thickness of film layer 13 is more than or equal to 20 μm, film will not just deform when being metallized；
Film layer 13 forms the equally rough pear skin layer 14 in similar pear skin surface after roughening treatment, and the pear skin layer 14 is positioned at thin
Between film layer 13 and metal level 15, the lower surface of metal level 15 is bonded with the upper surface of pear skin layer 14, the design energy of pear skin layer 14
The firmness that enough increase metal level 15 is connected with pear skin layer 14, and the scope of the thickness of pear skin layer 14 is 10 μm -20 μm, at this
The degree of being connected firmly of scope inner metal layer 15 and pear skin layer 14 is preferable, wherein optimal when the thickness of pear skin layer 14 is 15 μm；Gold
The scope for belonging to the thickness of layer 15 is 10 μm -20 μm, and now the thermal conductivity of metallized film 4 and anti-breakdown effect are preferable, work as metal
Optimal when the thickness of layer 15 is 15 μm.
As depicted in figs. 1 and 2, film layer 13 is connected with heat-conducting plate 3, and the upper surface of metal level 15 is fixed with crystal-bonding adhesive 5, Gu
Brilliant glue 5 covers the lower surface of LED chip 2, and the design can increase the connection area of LED chip 2 and crystal-bonding adhesive 5, make both
Between heat transfer it is more efficient；The thickness of crystal-bonding adhesive 5 between 5 μm -10 μm, when crystal-bonding adhesive 5 thickness within the range when,
The metal level 15 and the degree of being connected firmly of LED chip 2 of metallized film 4 are preferable, at the same the heat transference efficiency of crystal-bonding adhesive 5 also compared with
Height, also, when the thickness of crystal-bonding adhesive 5 is 7 μm, effect is best.
The temperature of LED chip 2 can be passed to metallized film 4 by this LED heat abstractor by crystal-bonding adhesive 5, then
Because the area of the upper surface of metallized film 4 is more than the area of the lower surface of LED chip 2, and metallized film 4 has very well
Thermal diffusivity and thermal conductivity, the heat part that crystal-bonding adhesive 5 passes over distributed from the upper surface of metallized film 4, separately
A part from the lower surface of metallized film 4 passes to heat-conducting plate 3, and passed to by heat-conducting plate 3 be bonded with heat-conducting plate 3 it is scattered
Hot support 1, and distributed from the surface of cooling stand 1, the design of the heat abstractor increases the area of dissipation of LED chip 2,
The temperature of LED chip 2 preferably by the heat derives of LED chip 2, and distribute, can be effectively reduced, improves LED
Thermal diffusivity.
Specific embodiment described herein is only to spirit explanation for example of the invention.Technology belonging to the present invention is led
The technical staff in domain can be made various modifications or supplement to described specific embodiment or be replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Claims (5)
1. a kind of LED heat abstractor, the heat abstractor includes cooling stand (1) and LED chip (2), the LED chip
(2) on the cooling stand (1), it is characterised in that be fixed with heat-conducting plate (3), the heat conduction on the cooling stand (1)
The lower surface of plate (3) is fixedly connected and is bonded with the upper surface of the cooling stand (1), and the heat abstractor also includes metal
Change film (4), the lower surface of the metallized film (4) is fixedly connected and is bonded with the upper surface of the heat-conducting plate (3), institute
LED chip (2) is stated to be fixedly connected by crystal-bonding adhesive (5) with the upper surface of metallized film (4), the metallized film (4)
The area of upper surface be more than the LED chip (2) lower surface area, the cooling stand (1) include first support (6),
Second support (7), the first heat sink (8) on the outside of the first support (6) and positioned at the outside of the second support (7)
Second heat sink (9), the first support (6) are provided with cathode contact (10), and the cathode contact (10) is located at described first
Between heat sink (8) and heat-conducting plate (3), the second support (7) is provided with cathode contact (11), cathode contact (11) position
Between second heat sink (9) and the heat-conducting plate (3), the LED chip (2) and the cathode contact (10) and negative pole
Contact (11) electrically connects.
2. a kind of LED according to claim 1 heat abstractor, it is characterised in that the first support (6) and second
Frame (7) is in the same plane and has space between the two, and the first support (6) and second support (7) pass through heat-conducting plate
(3) it is connected, first heat sink (8) is fixed on the upper surface of first support (6), and second heat sink (9) is fixed on the
The upper surface of two supports (7).
3. a kind of LED according to claim 2 heat abstractor, it is characterised in that the LED chip (2) passes through wire
(12) electrically connected respectively with the cathode contact (10) and cathode contact (11).
A kind of 4. heat abstractor of LED according to claim 1 or 2 or 3, it is characterised in that the metallized film (4)
Including film layer (13), pear skin layer (14) and metal level (15), the pear skin layer (14) is formed by film layer (13) roughening treatment,
And the pear skin layer (14) is located between film layer (13) and metal level (15), lower surface and the pears of the metal level (15)
The upper surface fitting of cortex (14), the film layer (13) are connected with the heat-conducting plate (3), the upper surface of the metal level (15)
Crystal-bonding adhesive (5) is fixed with, the crystal-bonding adhesive (5) is by the thickness of the lower surface covering of the LED chip (2) and crystal-bonding adhesive (5) 5
Between μm -10 μm.
5. a kind of LED according to claim 4 heat abstractor, it is characterised in that the thickness of the film layer (13) is big
In equal to 20 μm, the scope of the thickness of the pear skin layer (14) is 10 μm -20 μm, and the scope of the thickness of the metal level (15) is
10μm-20μm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510470821.6A CN105006516B (en) | 2015-08-04 | 2015-08-04 | A kind of LED heat abstractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510470821.6A CN105006516B (en) | 2015-08-04 | 2015-08-04 | A kind of LED heat abstractor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105006516A CN105006516A (en) | 2015-10-28 |
| CN105006516B true CN105006516B (en) | 2018-01-30 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2886811Y (en) * | 2005-08-24 | 2007-04-04 | 华兴电子工业股份有限公司 | Heat radiation support structure for LED |
| CN201893378U (en) * | 2010-11-28 | 2011-07-06 | 晶诚（郑州）科技有限公司 | Light-emitting diode (LED) heat dissipation packaging structure |
| CN201910445U (en) * | 2010-12-09 | 2011-07-27 | 西安新大良电子科技有限公司 | Light-emitting diode (LED) packaging structure |
| CN201918430U (en) * | 2011-01-27 | 2011-08-03 | 深圳市德泽能源科技有限公司 | Integral heat dissipation structure for LED substrate |
| CN204857786U (en) * | 2015-08-04 | 2015-12-09 | 浙江福森电子科技有限公司 | Heat radiator for LED |
-
2015
- 2015-08-04 CN CN201510470821.6A patent/CN105006516B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2886811Y (en) * | 2005-08-24 | 2007-04-04 | 华兴电子工业股份有限公司 | Heat radiation support structure for LED |
| CN201893378U (en) * | 2010-11-28 | 2011-07-06 | 晶诚（郑州）科技有限公司 | Light-emitting diode (LED) heat dissipation packaging structure |
| CN201910445U (en) * | 2010-12-09 | 2011-07-27 | 西安新大良电子科技有限公司 | Light-emitting diode (LED) packaging structure |
| CN201918430U (en) * | 2011-01-27 | 2011-08-03 | 深圳市德泽能源科技有限公司 | Integral heat dissipation structure for LED substrate |
| CN204857786U (en) * | 2015-08-04 | 2015-12-09 | 浙江福森电子科技有限公司 | Heat radiator for LED |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105006516A (en) | 2015-10-28 |
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