CN105006516A - LED heat dissipation device - Google Patents
LED heat dissipation device Download PDFInfo
- Publication number
- CN105006516A CN105006516A CN201510470821.6A CN201510470821A CN105006516A CN 105006516 A CN105006516 A CN 105006516A CN 201510470821 A CN201510470821 A CN 201510470821A CN 105006516 A CN105006516 A CN 105006516A
- Authority
- CN
- China
- Prior art keywords
- heat
- led
- support
- led chip
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000017525 heat dissipation Effects 0.000 title abstract 13
- 239000011104 metalized film Substances 0.000 claims abstract description 42
- 239000000853 adhesive Substances 0.000 claims description 30
- 230000001070 adhesive effect Effects 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 30
- 241000220324 Pyrus Species 0.000 claims description 28
- 235000021017 pears Nutrition 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims description 24
- 238000007788 roughening Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 11
- 239000003292 glue Substances 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000013461 design Methods 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 210000002615 epidermis Anatomy 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The invention provides an LED heat dissipation device, and belongs to the technical field of LED packaging. The technical problem that the heat dissipation effect of the existing LED lamp is poor is solved. The LED heat dissipation device comprises a heat dissipation bracket and an LED chip arranged on the heat dissipation bracket. The LED heat dissipation device is characterized in that a heat conduction plate is fixed to the heat dissipation bracket, and the lower surface of the heat conduction plate is fixedly connected with and fits the upper surface of the heat dissipation bracket; the heat dissipation device further includes a metalized film, and the lower surface of the metalized film is fixedly connected with and fits the upper surface of the heat conduction plate; and the LED chip is fixedly connected to the upper surface of the metalized film through die-bonding glue, and the area of the upper surface of the metalized film is greater than the area of the lower surface of the LED chip. By adopting the LED heat dissipation device of the invention, the heat dissipation area of the LED chip is increased, the heat generated by the LED chip can be well guided out and dissipated, the temperature of the LED chip is effectively reduced, and the heat dissipation performance of LEDs is improved.
Description
Technical field
The invention belongs to LED technical field, relate to the heat abstractor of a kind of LED.
Background technology
LED (light-emitting diode) encapsulation refers to the encapsulation of luminescence chip, and comparing integrated antenna package has relatively big difference.The encapsulation of LED not only requirement can protect wick, but also can printing opacity.So the encapsulation of LED has special requirement to encapsulating material.
After entering 21 century, the high efficiency of LED, super brightness, the innovation of panchromaticization development, red, orange LED light effect reaches 100Im/W, and green LED is that the luminous flux of 501m/W, single LED also reaches tens of Im.LED chip and encapsulation no longer follow traditional design concept and manufacture production model, in the light output increasing chip, research and development are not limited only to change amount of impurities in material, and lattice defect and dislocation improve internal efficiency, simultaneously, how to improve tube core and encapsulation internal structure, strengthen the probability that LED inside produces photon outgoing, improve light efficiency, solve heat radiation, get light and heat and sink optimal design, improve optical property, accelerate the main flow direction of surface mount SMD process industrial circle research and development especially.
A kind of LED encapsulation method as disclosure of the invention that application number is " 201410131483.9 ", for packaged LED device, the lens that this LED component comprises substrate, installs LED chip on the substrate and be wrapped in outside described LED chip, comprise the following steps: above LED chip, carry out first time put glue, then cool to room temperature makes it solidify to form basal layer, and the some glue amount that first time puts glue is at least wrapped up LED chip but do not overflow substrate edges; Repeatedly repeat following sub-step and on described basal layer, form stack layer jointly to be formed lens with basal layer: above described basal layer summit, again put glue, then cool to room temperature makes it solidify.Although this inventive method also well can control lens shape when not needing mould, form the lens compared with large ratio of height to width, the LED thermal diffusivity after encapsulation is not high, cannot tackle more and more higher radiating requirements.
Summary of the invention
The present invention is directed to the problems referred to above that existing technology exists, provide the heat abstractor of a kind of LED, technical problem to be solved by this invention is: the thermal diffusivity how improving LED.
Object of the present invention realizes by following technical proposal:
The heat abstractor of a kind of LED, described heat abstractor comprises cooling stand and LED chip, described LED chip is located on described cooling stand, it is characterized in that, described cooling stand is fixed with heat-conducting plate, the lower surface of described heat-conducting plate is fixedly connected with the upper surface of described cooling stand and fits, described heat abstractor also comprises metallized film, the lower surface of described metallized film is fixedly connected with the upper surface of described heat-conducting plate and fits, described LED chip is fixedly connected with by crystal-bonding adhesive with the upper surface of metallized film, the area of the upper surface of described metallized film is greater than the area of the lower surface of described LED chip.
Its operation principle is as follows: above-mentioned cooling stand is made up of the good material of thermal conductivity, and above-mentioned crystal-bonding adhesive has good thermal endurance and thermal conductivity, and above-mentioned heat-conducting plate, through insulation processing, has good insulating properties, the basic structure of LED is a P-N junction, when electric current is by LED original paper, the temperature of P-N junction can rise, because the size of LED chip is less, the temperature of P-N junction is similar to the temperature of LED chip, the temperature of LED chip can be passed to metallized film by crystal-bonding adhesive by the heat abstractor of this LED, then because the area of the upper surface of metallized film is greater than the area of the lower surface of LED chip, and metallized film has good thermal diffusivity and thermal conductivity, the heat part that crystal-bonding adhesive passes over distributes from the upper surface of metallized film, another part passes to heat-conducting plate from the lower surface of metallized film, and the cooling stand of fitting with heat-conducting plate is passed to by heat-conducting plate, and distribute from the surface of cooling stand, the design of this heat abstractor increases the area of dissipation of LED chip, preferably the heat of LED chip can be derived, and distribute, effectively reduce the temperature of LED chip, improve the thermal diffusivity of LED.
In the heat abstractor of above-mentioned a kind of LED, described cooling stand comprises the first support, the second support, the first heating panel and the second heating panel, described first support and the second support in the same plane and there is space between the two, described first support and the second support are connected by heat-conducting plate, described first heating panel is fixed on the upper surface of the first support and is positioned at the outside of described first support, and described second heating panel is fixed on the upper surface of the second support and is positioned at the outside of described second support.Having space between above-mentioned first support and the second support is that if both directly contact, then electric current is directly passed through by the first support and the second support because both can be made up of electric conducting material, forms short circuit, produces dangerous hidden danger; The design of the first heating panel and the second heating panel can further increasing heat radiation area, improves radiating effect; Alternatively, the first above-mentioned heating panel and the second heating panel also can be the structures of other increase area of dissipations such as fin or projection.
In the heat abstractor of above-mentioned a kind of LED, described first support is provided with cathode contact, described cathode contact is between described first heating panel and heat-conducting plate, described second support is provided with cathode contact, described cathode contact is between described second heating panel and described heat-conducting plate, and described LED chip is electrically connected with described cathode contact and cathode contact respectively by wire.The setting of above-mentioned cathode contact and cathode contact not only makes this construction for heat radiating device compacter, and the heat that cathode contact and cathode contact produce also can be exhaled by cooling stand rapidly, further increases the radiating effect of LED; Alternatively, the position of described cathode contact and described cathode contact can exchange.
In the heat abstractor of above-mentioned a kind of LED, described metallized film comprises thin layer, pears cortex and metal level, described pears cortex is formed by thin layer roughening treatment, and described pears cortex is between thin layer and metal level, the lower surface of described metal level and the upper surface of described pears cortex are fitted, described thin layer and described heat-conducting plate are connected, the upper surface of described metal level is fixed with crystal-bonding adhesive, described crystal-bonding adhesive by the lower surface of described LED chip cover and the thickness of crystal-bonding adhesive between 5 μm-10 μm.Thin layer forms the equally rough pears cortex in similar pears epidermis face after roughening treatment, and the design of pears cortex can increase the firmness that metal level is connected with pears cortex; The covering of the lower surface of LED chip is the connection area in order to increase LED chip and crystal-bonding adhesive by crystal-bonding adhesive, makes the efficiency of heat trnasfer between the two higher; When crystal-bonding adhesive thickness 5 μm-10 μm this within the scope of time, the metal level of metallized film and the degree of being connected firmly of LED chip are better, and the heat transference efficiency of crystal-bonding adhesive is also higher simultaneously, and when the thickness of crystal-bonding adhesive is 7 μm, effect is best.
In the heat abstractor of above-mentioned a kind of LED, the thickness of described thin layer is more than or equal to 20 μm, and the scope of the thickness of described pears cortex is 10 μm-20 μm, and the scope of the thickness of described metal level is 10 μm-20 μm.When the thickness of thin layer is more than or equal to 20 μm, when metallizing, film can not deform; When the scope of the thickness of pears cortex is 10 μm-20 μm, the degree of being connected firmly of metal level and pears cortex is better, wherein the best when the thickness of pears cortex is 15 μm; When the scope of the thickness of metal level is 10 μm-20 μm, the thermal conductivity of metallized film and anti-breakdown effect are better, when the thickness of metal level is 15 μm in the best.
Compared with prior art, advantage of the present invention is as follows:
1, the temperature of LED chip can be passed to metallized film by crystal-bonding adhesive by the heat abstractor of this LED, then because the area of the upper surface of metallized film is greater than the area of the lower surface of LED chip, and metallized film has good thermal diffusivity and thermal conductivity, the heat part that crystal-bonding adhesive passes over distributes from the upper surface of metallized film, another part passes to heat-conducting plate from the lower surface of metallized film, and the cooling stand of fitting with heat-conducting plate is passed to by heat-conducting plate, and distribute from the surface of cooling stand, the design of this heat abstractor increases the area of dissipation of LED chip, preferably the heat of LED chip can be derived, and distribute, effectively reduce the temperature of LED chip, improve the thermal diffusivity of LED,
2, the design of the first heating panel and the second heating panel can further increasing heat radiation area, improves radiating effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of the heat abstractor of this LED.
Fig. 2 is the partial sectional view of this metallized film.
In figure, 1 cooling stand; 2LED chip; 3 heat-conducting plates; 4 metallized films; 5 crystal-bonding adhesives; 6 first supports; 7 second supports; 8 first heating panels; 9 second heating panels; 10 cathode contacts; 11 cathode contacts; 12 wires; 13 thin layers; 14 pears cortexes; 15 metal levels.
Embodiment
Be below specific embodiments of the invention and by reference to the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiments.
The basic structure of LED is a P-N junction, and when electric current is by LED element, the temperature of P-N junction can rise, because the size of LED chip 2 is less, the temperature of P-N junction is similar to the temperature of LED chip 2, and the heat abstractor of this LED effectively can improve thermal diffusivity, reduces the working temperature of LED chip 2.
As depicted in figs. 1 and 2, the heat abstractor of this LED comprises cooling stand 1, LED chip 2 and metallized film 4, metallized film 4 in the present embodiment is made up of polyimides or polyimide modified material, the metallized film 4 be made up of polyimides has excellent heat-resisting quantity (high temperature resistant reach more than 400 DEG C), electric insulating quality and radiation resistance, and the advantage such as high temperature self-adhesion sealing.Cooling stand 1 is made up of the good material of thermal conductivity, be made of copper in the present embodiment, cooling stand 1 is fixed with heat-conducting plate 3, the lower surface of metallized film 4 is fixedly connected with the upper surface of heat-conducting plate 3 and fits, LED chip 2 is fixedly connected with by crystal-bonding adhesive 5 with the upper surface of metallized film 4, this crystal-bonding adhesive 5 has good thermal endurance and thermal conductivity, and the area of the upper surface of metallized film 4 is greater than the area of the lower surface of LED chip 2.
As shown in Figure 1, cooling stand 1 comprises the first support 6, second support 7, first heating panel 8 and the second heating panel 9, first support 6 and the second support 7 in the same plane and there is space between the two, having space between this first support 6 and second support 7 is because both can be made up of electric conducting material, if both directly contact, then electric current is directly passed through by the first support 6 and the second support 7, forms short circuit, produces dangerous hidden danger; The lower surface of heat-conducting plate 3 is fixedly connected with the upper surface of the first support 6 with the upper surface of the second support 7 and fits respectively, the heat of heat-conducting plate 3 can be passed to the first support 6 and the second support 7 by this design, increasing heat radiation area, improves the radiating effect of LED.
In this heat abstractor, the first heating panel 8 is fixed on the upper surface of the first support 6 and is positioned at the outside of the first support 6, and the first support 6 is provided with cathode contact 10, and cathode contact 10 is between the first heating panel 8 and heat-conducting plate 3; Second heating panel 9 is fixed on the upper surface of the second support 7 and is positioned at the outside of the second support 7, second support 7 is provided with cathode contact 11, cathode contact 11 is between the second heating panel 9 and heat-conducting plate 3, and LED chip 2 is electrically connected with cathode contact 10 and cathode contact 11 respectively by wire 12; Heat-conducting plate 3, through insulation processing, has good insulating properties, and therefore electric current can not enter heat-conducting plate 3 and flows to cathode contact 11 from cathode contact 10, and in the present embodiment, heat-conducting plate 3 is made by gold-tin alloy material; The design of the first heating panel 8 and the second heating panel 9 can further increasing heat radiation area, improve radiating effect, alternatively, the first above-mentioned heating panel 8 and the second heating panel 9 also can be the structures of other increase area of dissipations such as fin or projection; The setting of cathode contact 10 and cathode contact 11 not only makes this construction for heat radiating device compacter, and the heat that cathode contact 10 and cathode contact 11 produce also can be exhaled by cooling stand 1 rapidly, further increases the radiating effect of LED; Alternatively, the position of cathode contact 10 and cathode contact 11 can exchange.
As shown in Figure 2, metallized film 4 comprises thin layer 13, pears cortex 14 and metal level 15, and the thickness of thin layer 13 is more than or equal to 20 μm, because when the thickness of thin layer 13 is more than or equal to 20 μm, when metallizing, film just can not deform; Thin layer 13 forms the equally rough pears cortex 14 in similar pears epidermis face after roughening treatment, this pears cortex 14 is between thin layer 13 and metal level 15, the lower surface of metal level 15 and the upper surface of pears cortex 14 are fitted, the design of pears cortex 14 can increase the firmness that metal level 15 is connected with pears cortex 14, and the scope of the thickness of pears cortex 14 is 10 μm-20 μm, better with the degree of being connected firmly of pears cortex 14 at this scope inner metal layer 15, wherein the best when the thickness of pears cortex 14 is 15 μm; The scope of the thickness of metal level 15 is 10 μm-20 μm, now the thermal conductivity of metallized film 4 and anti-breakdown effect better, when the thickness of metal level 15 is 15 μm in the best.
As depicted in figs. 1 and 2, thin layer 13 and heat-conducting plate 3 are connected, and the upper surface of metal level 15 is fixed with crystal-bonding adhesive 5, and the lower surface of LED chip 2 covers by crystal-bonding adhesive 5, this design can increase LED chip 2 and the connection area of crystal-bonding adhesive 5, makes the efficiency of heat trnasfer between the two higher; The thickness of crystal-bonding adhesive 5 is between 5 μm-10 μm, and when the thickness of crystal-bonding adhesive 5 is within the scope of this, the metal level 15 of metallized film 4 is better with the degree of being connected firmly of LED chip 2, the heat transference efficiency of crystal-bonding adhesive 5 is also higher simultaneously, further, when the thickness of crystal-bonding adhesive 5 is 7 μm, effect is best.
The temperature of LED chip 2 can be passed to metallized film 4 by crystal-bonding adhesive 5 by the heat abstractor of this LED, then because the area of the upper surface of metallized film 4 is greater than the area of the lower surface of LED chip 2, and metallized film 4 has good thermal diffusivity and thermal conductivity, the heat part that crystal-bonding adhesive 5 passes over distributes from the upper surface of metallized film 4, another part passes to heat-conducting plate 3 from the lower surface of metallized film 4, and the cooling stand 1 of fitting with heat-conducting plate 3 is passed to by heat-conducting plate 3, and distribute from the surface of cooling stand 1, the design of this heat abstractor increases the area of dissipation of LED chip 2, preferably the heat of LED chip 2 can be derived, and distribute, effectively reduce the temperature of LED chip 2, improve the thermal diffusivity of LED.
Specific embodiment described herein is only to the explanation for example of the present invention's spirit.Those skilled in the art can make various amendment or supplement or adopt similar mode to substitute to described specific embodiment, but can't depart from spirit of the present invention or surmount the scope that appended claims defines.
Claims (5)
1. the heat abstractor of a LED, described heat abstractor comprises cooling stand (1) and LED chip (2), described LED chip (2) is located on described cooling stand (1), it is characterized in that, described cooling stand (1) is fixed with heat-conducting plate (3), the lower surface of described heat-conducting plate (3) is fixedly connected with the upper surface of described cooling stand (1) and fits, described heat abstractor also comprises metallized film (4), the lower surface of described metallized film (4) is fixedly connected with the upper surface of described heat-conducting plate (3) and fits, described LED chip (2) is fixedly connected with by crystal-bonding adhesive (5) with the upper surface of metallized film (4), the area of the upper surface of described metallized film (4) is greater than the area of the lower surface of described LED chip (2).
2. the heat abstractor of a kind of LED according to claim 1, it is characterized in that, described cooling stand (1) comprises the first support (6), second support (7), first heating panel (8) and the second heating panel (9), described first support (6) and the second support (7) in the same plane and there is space between the two, described first support (6) and the second support (7) are connected by heat-conducting plate (3), described first heating panel (8) is fixed on the upper surface of the first support (6) and is positioned at the outside of described first support (6), described second heating panel (9) is fixed on the upper surface of the second support (7) and is positioned at the outside of described second support (7).
3. the heat abstractor of a kind of LED according to claim 2, it is characterized in that, described first support (6) is provided with cathode contact (10), described cathode contact (10) is positioned between described first heating panel (8) and heat-conducting plate (3), described second support (7) is provided with cathode contact (11), described cathode contact (11) is positioned between described second heating panel (9) and described heat-conducting plate (3), described LED chip (2) is electrically connected with described cathode contact (10) and cathode contact (11) respectively by wire (12).
4. the heat abstractor of a kind of LED according to claim 1 or 2 or 3, it is characterized in that, described metallized film (4) comprises thin layer (13), pears cortex (14) and metal level (15), described pears cortex (14) is formed by thin layer (13) roughening treatment, and described pears cortex (14) is positioned between thin layer (13) and metal level (15), the lower surface of described metal level (15) and the upper surface of described pears cortex (14) are fitted, described thin layer (13) and described heat-conducting plate (3) are connected, the upper surface of described metal level (15) is fixed with crystal-bonding adhesive (5), described crystal-bonding adhesive (5) by the lower surface of described LED chip (2) cover and the thickness of crystal-bonding adhesive (5) between 5 μm-10 μm.
5. the heat abstractor of a kind of LED according to claim 4, it is characterized in that, the thickness of described thin layer (13) is more than or equal to 20 μm, the scope of the thickness of described pears cortex (14) is 10 μm-20 μm, and the scope of the thickness of described metal level (15) is 10 μm-20 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510470821.6A CN105006516B (en) | 2015-08-04 | 2015-08-04 | A kind of LED heat abstractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510470821.6A CN105006516B (en) | 2015-08-04 | 2015-08-04 | A kind of LED heat abstractor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105006516A true CN105006516A (en) | 2015-10-28 |
| CN105006516B CN105006516B (en) | 2018-01-30 |
Family
ID=54379111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510470821.6A Active CN105006516B (en) | 2015-08-04 | 2015-08-04 | A kind of LED heat abstractor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105006516B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2886811Y (en) * | 2005-08-24 | 2007-04-04 | 华兴电子工业股份有限公司 | Heat radiation support structure for LED |
| CN201893378U (en) * | 2010-11-28 | 2011-07-06 | 晶诚（郑州）科技有限公司 | Light-emitting diode (LED) heat dissipation packaging structure |
| CN201910445U (en) * | 2010-12-09 | 2011-07-27 | 西安新大良电子科技有限公司 | Light-emitting diode (LED) packaging structure |
| CN201918430U (en) * | 2011-01-27 | 2011-08-03 | 深圳市德泽能源科技有限公司 | Integral heat dissipation structure for LED substrate |
| CN204857786U (en) * | 2015-08-04 | 2015-12-09 | 浙江福森电子科技有限公司 | Heat radiator for LED |
-
2015
- 2015-08-04 CN CN201510470821.6A patent/CN105006516B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2886811Y (en) * | 2005-08-24 | 2007-04-04 | 华兴电子工业股份有限公司 | Heat radiation support structure for LED |
| CN201893378U (en) * | 2010-11-28 | 2011-07-06 | 晶诚（郑州）科技有限公司 | Light-emitting diode (LED) heat dissipation packaging structure |
| CN201910445U (en) * | 2010-12-09 | 2011-07-27 | 西安新大良电子科技有限公司 | Light-emitting diode (LED) packaging structure |
| CN201918430U (en) * | 2011-01-27 | 2011-08-03 | 深圳市德泽能源科技有限公司 | Integral heat dissipation structure for LED substrate |
| CN204857786U (en) * | 2015-08-04 | 2015-12-09 | 浙江福森电子科技有限公司 | Heat radiator for LED |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105006516B (en) | 2018-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10989363B2 (en) | LED filament and LED bulb with LED filament | |
| JP2008277817A (en) | Heat dissipation module and method for fabricating the same | |
| CN106895280A (en) | A kind of illuminator and preparation method thereof | |
| CN204857786U (en) | Heat radiator for LED | |
| TWI528596B (en) | Led package and method of manufacturing the same | |
| CN103956356A (en) | Efficient heat conducting large-power LED integration package structure | |
| CN101493219A (en) | High heat radiation LED illuminating apparatus and method for manufacturing same | |
| CN102157508A (en) | Novel LED packaging light-reflecting method and device | |
| CN105006516A (en) | LED heat dissipation device | |
| US20120187433A1 (en) | Structure of light source module and manufacturing method thereof | |
| CN204538076U (en) | LED upside-down mounting COB structure | |
| CN203642131U (en) | LED heat sink with high-heat dissipation performance and LED lamp provided with LED heat sink | |
| CN203323067U (en) | High-power LED heat dissipation structure | |
| CN202308056U (en) | High-power light emitting diode (LED) heat radiation structure | |
| CN206409911U (en) | A kind of LED lamp panel of excellent heat dissipation performance | |
| CN205264751U (en) | Low thermal resistance LED light source | |
| CN103883907B (en) | High-power LED illumination assembly | |
| CN102777776A (en) | Aluminum oxide ceramic LED (light emitting diode) bulb lamp and manufacture method thereof | |
| CN202216026U (en) | Heat dissipation structure body of LED (light-emitting diode) lamp with ball bulb | |
| CN209627823U (en) | The good PCB of heat dissipation performance | |
| CN201804912U (en) | LED encapsulation structure with high heat-conducting property | |
| TWI476958B (en) | Light-emitting diode package structure and method making of the same | |
| JP3166114U (en) | White light LED package structure | |
| CN204614818U (en) | A kind of LED chip packaging system | |
| CN206595286U (en) | A kind of great power LED component |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231110 Address after: Room 501, 5th Floor, Dezhihe Building, No. 183 Central Avenue, Jiayi Street, Jiaojiang District, Taizhou City, Zhejiang Province, 318000 Patentee after: Taizhou Lijing Optoelectronic Technology Co.,Ltd. Address before: 318001 east side of the first floor of building 3, No. 818, east section of Kaifa Avenue, Jiaojiang District, Taizhou City, Zhejiang Province Patentee before: ZHEJIANG FUSEN ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |