CN105006440B - 一种真空键合大气加压混合键合方法 - Google Patents

一种真空键合大气加压混合键合方法 Download PDF

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CN105006440B
CN105006440B CN201510355715.3A CN201510355715A CN105006440B CN 105006440 B CN105006440 B CN 105006440B CN 201510355715 A CN201510355715 A CN 201510355715A CN 105006440 B CN105006440 B CN 105006440B
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梅绍宁
程卫华
陈俊
朱继锋
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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Abstract

本发明涉及一种真空键合大气加压混合键合方法。首先在真空环境下实施晶圆的混合键合，两片晶圆界面上的不平坦区域会形成真空腔体；键合完成后，离开真空环境；外部大气压与微观上的真空腔体相互作用，会将大气压力作用到混合键合的界面上；此时再进行高温退火，热膨胀的力与大气压力相互抵消，可有效削弱热膨胀系数差异的影响。本发明可以削弱混合键合界面上金属和绝缘物质之间热膨胀系数的差异的影响，从而提高键合的成功率，同时提高混合键合技术在设计上的限制，例如：不需要考虑不同热膨胀系数材料在界面上的面积比。

Description

一种真空键合大气加压混合键合方法
技术领域
本发明涉及半导体制造领域，具体涉及一种真空键合大气加压混合键合方法。
背景技术
在超大规模集成电路发展日益接近物理极限的情况下，于物理尺寸和成本方面都具有优势的三维集成电路是延长摩尔定律并解决先进封装问题的有效途径。而晶圆键合技术正是三维电路集成的关键技术之一，尤其是混合键合技术可以在两片晶圆键合的同时实现数千个芯片的内部互联，可以极大改善芯片性能并节约成本。混合键合技术是指晶圆键合界面上同时存在金属和绝缘物质的键合方式。
混合键合在界面上同时存在金属和绝缘物质，在键合技术中，要通过高温退火才能让金属与金属，绝缘物质与绝缘物质之间形成稳定的键合。表1：半导体行业常见物质的热膨胀系数表，如表1所示金属和绝缘物质之间的热膨胀系数存在很大的差异。由于金属和绝缘物质之间热膨胀系数的差异，在进行高温退火后的晶圆上的金属部分比绝缘物质部分要膨胀的高，从而导致混合键合失败。图1至图3为混合键合在高温热退火中由于金属和绝缘物质热膨胀系数差异而导致键合失败的实施例剖面示意图；如图1至图3所示，晶圆1的键合界面上同时存在金属3和绝缘物质2；在高温情况下，金属3部分比绝缘物质2部分要膨胀的高，从而导致高温退火后晶圆混合键合失败。
表1：半导体行业常见物质的热膨胀系数表
类别 物质名称 热膨胀系数(百万分之一/每度)
绝缘物质 二氧化硅 0.55
绝缘物质 氮化硅 3.2
金属 铜 16.7
金属 金 14.2
发明内容
本发明的目的是提供一种混合键合技术以解决混合键合技术中由于热膨胀系数的差异而在热退火过程中键合失败的问题。
为解决上述技术问题，本发明提供了一种真空键合大气加压混合键合方法，包括如下步骤：
步骤1，提供两个待混合键合的晶圆；
步骤2，在晶圆表面沉积介质层，并进行图形化处理，获得图形化结构；
利用金属沉积方法沉积金属填充所述图形化结构；
步骤3，采用化学机械研磨方法对晶圆表面进行平坦化处理，使晶圆表面金属和介质层表面在一个平面上；
步骤4，使采用以上方法制作的两晶圆相对，使两晶圆表面金属和介质层对准，并在真空环境下完成预键合，得到预键合晶圆,在预键合晶圆键合界面的不平坦区域会形成微观真空腔体；
步骤5，预键合完成后，键合晶圆离开真空环境进行热退火，外部大气压与微观真空腔体内的真空存在压力差，利用所述压力差条件抵消热退火中晶圆键合界面的热膨胀力，实现两晶圆稳定的键合。
优选的，所述在真空环境下完成预键合，得到预键合晶圆,在预键合晶圆键合界面的不平坦区域会形成微观真空腔体的步骤中，真空环境的真空度大于7.6Torr。
优选的，所述预键合完成后，键合晶圆离开真空环境进行热退火，外部大气压与微观真空腔体内的真空存在压力差，利用所述压力差条件抵消热退火中晶圆键合界面的热膨胀力，实现两晶圆稳定的键合的步骤中，外部大气压的压强大于0.5*10^5Pa。
优选的，所述预键合完成后，键合晶圆离开真空环境进行热退火，外部大气压与微观真空腔体内的真空存在压力差，利用所述压力差条件抵消热退火中晶圆键合界面的热膨胀力，实现两晶圆稳定的键合的步骤中，热退火的工艺参数为：退火温度范围在200～450℃，退火时间大于0.15小时。
本发明的有益效果是：可以削弱混合键合界面上金属和绝缘物质之间热膨胀系数的差异的影响，从而提高键合的成功率，同时提高混合键合技术在设计上的限制(不需要考虑不同热膨胀系数材料在界面上的面积比)。
附图说明
图1至图3为混合键合在高温热退火中由于金属和绝缘物质热膨胀系数差异而导致键合失败的实施例剖面示意图；
图4～图8为本发明提供的一个实施例对应的工艺流程剖面示意图。
具体实施方式
以下结合附图对本发明的原理和特征进行描述，所举实例只用于解释本发明，并非用于限定本发明的范围。
本发明一种真空键合大气加压混合键合方法基于晶圆表面并不是理想的镜面，而总是有一定的起伏和表面粗糙度，两晶圆在真空环境下进行混合键合,在两晶圆界面上的不平坦区域会形成真空腔体,完成混合键合后的晶圆在常压环境下进行高温退火，外部大气压与微观真空腔体内的真空存在压力差，该压力差与晶圆键合界面上的热膨胀的力相互抵消，可有效削弱热膨胀系数差异的影响。
下面结合附图对本发明的具体实施方式做进一步说明。
图4～图8为本发明提供的一个实施例对应的工艺流程剖面示意图，为更好说明本发明，下面分步骤进行详细介绍。
(1)步骤1：如图4和图5所示，在待键合的晶圆101表面沉积介质层201，并进行图形化处理，获得图形化结构；在本实施例中介质层201的材质为氧化硅，沉淀方式CVD方式，图形化处理采用反应离子刻蚀的方式；
(2)步骤2：如图6所示，在步骤1完成的晶圆101表面实施金属沉积方法沉积金属填充所述图形化结构；
(3)步骤3：如图7所示，采用化学机械研磨方式处理晶圆101表面，使金属301与介质层201表面在平坦化处理后在一个平面上；
(4)步骤4：采用上述方法制作晶圆102，使晶圆102具有和晶圆101相似的结构，晶圆102包括：晶圆102表面的介质层202和金属302；将晶圆101和晶圆102相对，使两晶圆表面金属材料301、302和介质层201、202对准，并在真空环境下完成预键合，得到预键合晶圆,在预键合晶圆键合界面的不平坦区域会形成微观真空腔体4；具体地，真空环境的真空度大于7.6Torr；在实施预键合工艺之前，对待键合晶圆进行表面处理，如超声清洗，等离子清洗等，去除表面颗粒和氧化层，保证键合界面性能。
(5)步骤5：如图8所示，预键合完成后，键合晶圆离开真空环境进行热退火，外部大气压与微观真空腔体4内的真空存在压力差，利用所述压力差条件抵消热退火中晶圆键合界面的热膨胀力，实现两晶圆稳定的键合；具体地，所述外部大气压的压强大于0.5*10^5Pa；所述热退火的操作条件为：退火温度范围在200～450℃，退火时间大于0.15小时。，例如在300℃的退火温度下，退火0.3小时。
本发明所述方法可以削弱金属和绝缘物质之间热膨胀系数的差异的影响，从而提高键合的成功率，同时提高混合键合技术在设计上的限制，例如：不需要考虑不同热膨胀系数材料在界面上的面积比。
以上所述实施步骤和方法仅仅表达了本发明的一种实施方式，描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。在不脱离本发明专利构思的前提下，所作的变形和改进应当都属于本发明专利的保护范围。

Claims (4)

1.一种真空键合大气加压混合键合方法，其特征在于，包括如下步骤：
步骤1，提供两个待混合键合的晶圆；
步骤2，在晶圆表面沉积介质层，并进行图形化处理，获得图形化结构；利用金属沉积方法沉积金属填充所述图形化结构；
步骤3，采用化学机械研磨方法对晶圆表面进行平坦化处理，使晶圆表面金属和介质层表面在一个平面上；
步骤4，使采用以上方法制作的两晶圆相对，使两晶圆表面金属和介质层对准，并在真空环境下完成预键合，得到预键合晶圆,在预键合晶圆键合界面的不平坦区域会形成微观真空腔体；
步骤5，预键合完成后，键合晶圆离开真空环境进行热退火，外部大气压与微观真空腔体内的真空存在压力差，利用所述压力差条件抵消热退火中晶圆键合界面的热膨胀力，实现两晶圆稳定的键合。
2.根据权利要求1所述一种真空键合大气加压混合键合方法，其特征在于，所述步骤4中，真空环境的真空度大于7.6Torr。
3.根据权利要求1或2所述一种真空键合大气加压混合键合方法，其特征在于，所述步骤5中，外部大气压的压强大于0.5*10^5Pa。
4.根据权利要求1或2所述一种真空键合大气加压混合键合方法，其特征在于，所述步骤5中，热退火的工艺参数为：退火温度范围在200～450℃，退火时间大于0.15小时。
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