CN104952748B - 将联接元件与功率半导体模块基底连接的设备及其方法 - Google Patents
将联接元件与功率半导体模块基底连接的设备及其方法 Download PDFInfo
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Abstract
本发明涉及一种将联接元件与功率半导体模块基底连接的设备及其方法。本发明说明了一种用于以焊接技术将功率半导体模块的联接元件与导体迹线连接的设备,该设备包括用于布置基底的支座,其中,支座具有第一和第二子支座,其中,第一子支座是具有在50kN/mm2至300kN/mm2之间的弹性模量的金属成形体,第二子支座是具有在10N/mm2至500N/mm2之间的弹性模量的弹性成形体,并且其中,底部元件安设在第二子支座上;该设备还包括被构造成用于将底部元件固定在支座上的保持装置、超声焊极、用于将联接元件相对基底定位的定位装置。本发明还说明了一种在使用该设备的情况下制造功率半导体模块的制造方法。
Description
技术领域
本发明说明了一种用于以焊接技术将联接元件与基底(尤其是基底的导体迹线)、尤其是与功率半导体模块基底连接的设备以及一种借助这种类型的设备制造功率半导体模块的方法。利用焊接技术的连接、简称焊接连接的概念在此并且在下文中应当理解为所有的焊接连接类型、尤其是超声波焊接连接和类似的连接类型,但是明显不是引线键合连接、例如本领域常见的薄引线键合连接或厚引线键合连接。
背景技术
由现有技术、例如DE 101 03 084 A1公知了一种具有至少一个功率半导体结构元件的功率半导体模块,其中,功率半导体结构元件直接布置在基底上,该基底具有绝缘材料体以及布置在朝向功率半导体结构元件的上侧上的与绝缘材料体固定连接的金属层,其中,功率半导体模块的至少一个联接元件借助焊接与金属层连接。
用于以焊接技术将联接元件与基底导体迹线连接的设备的本领域常见的设计具有用于布置底部元件的金属支座、保持装置以及超声焊极,该底部元件可以构造为带布置在其上的基底的底板或可以仅构造为基底,该保持装置构造用于将底部元件固定在支座上。此外,可以设置用于将联接元件相对基底定位的定位装置。
原则上问题在于,当借助本领域常见的设备通过将能量借助超声焊极引导到联接元件上而实施焊接连接时,在以本领域常见的方式构造有导体迹线的金属层与绝缘材料体之间的连接被损坏或被预先损坏。在此,在使用功率半导体模块时,绝缘材料体与导体迹线之间的连接可能至少局部松脱。由此,至少会限制功率半导体模块的耐久性。
发明内容
基于上面提到的事实,本发明的任务在于,提供一种改进的用于以焊接技术连接联接元件与基底的设备,以及提供一种用于在使用这种类型的设备的情况下制造功率半导体模块的方法。
根据本发明,该任务通过下面所描述的设备以及通过下面所描述的功率半导体模块来解决。优选的实施方式在下文中进行描述。
根据本发明的用于以焊接技术将联接元件、尤其是功率半导体模块的联接元件与基底的导体迹线、尤其是功率半导体模块的导体迹线连接的设备,其具有:
·支座,其用于布置底部元件,该底部元件构造为基底或构造为具有布置在其上的基底的底板,其中,支座具有第一和第二子支座,其中,第一子支座是具有在50kN/mm2至300kN/mm2之间的弹性模量的金属成形体,并且第二子支座是具有在10N/mm2至500N/mm2之间的弹性模量的弹性成形体,并且其中,底部元件安设在第二子支座上,尤其是仅安设在第二子支座上;
·保持装置,其构造用于将底部元件固定在支座上;
·超声焊极;
·定位装置,其用于将联接元件相对基底定位,从而使联接元件的接触脚安设在基底导体迹线的接触部上并且借助超声焊极与之连接。
特别优选的是,第二子支座的弹性模量在25N/mm2至100N/mm2之间。
此外,优选的是,第一和第二子支座以机械方式、优选借助螺纹连接件相互连接。
在此,第二子支座可以具有0.2cm、优选1cm的最小厚度。
特别有利的是,保持装置构造为机械夹持装置,并且替选或附加地构造为气动式抽吸装置。
同样可以优选的是,接触部至少具有2mm2、优选5mm2的面积。
特别优选的是,第二子支座具有肖氏A 60至肖氏D 80、优选肖氏A80至肖氏A 95的硬度。
有利的是,第二子支座由塑料、优选聚氨酯、优选聚氨酯弹性体、优选基于聚醚的聚氨酯弹性体构成。
在根据本发明的用于制造功率半导体模块的方法中,该功率半导体模块具有底部元件,底部元件构造为基底或构造为具有布置在其上的基底的底板,该功率半导体模块还具有联接元件,为了电连接,该联接元件尤其是由铜或铜合金构成,其中,联接元件具有接触脚,该接触脚与基底导体迹线的配属的接触部以焊接技术连接,该导体迹线尤其是由铜或铜合金构成。
显然,联接元件的概念在此也可以理解为多个联接元件,并且也可以理解为多个不同功能的联接元件、例如内部的或向外引导的负载联接元件或辅助联接元件。
可以优选的是,底部元件在纵向方向上具有至少一个第一预先弯曲部。同时或作为替选可以优选的是,底部元件在横向方向上具有至少一个第二预先弯曲部。
可以理解的是,本发明的不同设计方案,也就是说设备、制造方法以及由此制造出的功率半导体模块的设计方案可以单独或以任意组合的方式实施,以便实现改进。尤其得,上面提到的以及在这里或在下文中将阐述的特征不仅可以按给出的组合方式,而且也可以按其他组合方式来使用,或者也可以单独地使用,而不会脱离本发明的范围。
附图说明
从下面对根据本发明的设备、根据本发明制造的功率半导体模块或其相应部件的在图1至图4中示意性示出的实施例的描述得到了对本发明的进一步阐述、有利的细节和特征。其中:
图1示出根据本发明的设备的第一设计方案,其具有已布置好的功率半导体模块基底;
图2示出根据本发明的设备的第二设计方案,其具有底板,该底板具有位于其上的功率半导体模块基底;
图3示出底板的剖视图以及俯视图,该底板具有位于其上的根据本发明制造的第一功率半导体模块基底;
图4示出底板的剖视图以及俯视图,该底板具有位于其上的根据本发明制造的第二功率半导体模块基底。
具体实施方式
图1示出根据本发明的设备1的第一设计方案,其具有已布置好的功率半导体模块基底60。示出了由第一和第二子支座20、22构成的支座2。第一子支座20优选在其基本设计方案中相应于用于焊接连接、尤其是超声波焊接连接的本领域常见的支座。该第一子支座20在此由金属成形体、尤其是钢体构成。
借助本领域常见的螺纹连接件连接将第二子支座22与第一子支座20力锁合地连接。该第二子支座22在其背离第一子支座20的表面上构造出用于要借助焊接连接来连接的物体(在此为功率半导体模块的底部元件6)的贴靠面。
此外,还示出了保持装置3,其用于固定待焊接的物体或其一部分。示出了两个在此协同作用的保持装置3,即夹持装置30以及气动的抽吸装置32,它们一起用于将物体力锁合地保持在第二子支座22的表面上。
在物体(底部元件6)本身不具有足够的机械稳定性,以便仅借助两个保持装置3中的一个进行固定的情况下,这两个设计方案是特别有利的。另一方面,在每个任意的物体的情况下,两个保持装置30、32在功能上起补充作用。
布置在第二子支座22表面上的物体在此是功率半导体模块的本领域常见的基底60。该基底60在此在不对普遍性进行限制的情况下由绝缘材料体64构成,例如由工业陶瓷构成,其具有布置在两个主面上的金属层、优选铜覆层62、66。铜覆层62、66尤其是在基底60的背离支座2的侧上构造出功率半导体模块的导体迹线62。
本领域常见的功率半导体结构元件70布置在导体迹线62上并且与其导电连接。没有进一步示出的连接部将这些功率半导体结构元件70与基底60的其他导体迹线62连接。
在此,焊接连接应构造在功率半导体模块的联接元件80与导体迹线62之间。在不对普遍性进行限制的情况下,联接元件是用于功率半导体模块的外部连接的负载联接元件。负载联接元件80具有接触脚8,其应与基底60的导体迹线62的配属的接触部620连接。
负载联接元件80以及接触脚82均构造为金属成形体,其优选由具有金属表面涂层的铜构成,所述金属表面涂层是本领域常见的并且不强制覆盖整个表面,优选由银或镍构成。
为了使负载联接元件80并且尤其是接触脚82相对导体迹线62的接触部620定位,设备1具有由两部分40、42构成的定位装置4。该定位装置4将接触脚82直接定位在接触部620上,或与接触部620以最小的间距定位。
此外,设备1具有用于将焊接能量引导至负载联接元件80的接触脚82上的超声焊极5。为此,如通过箭头示意性示出的那样,将超声焊极5安设到接触脚82的背离导体迹线62的侧上,并且随后按本领域常见的超声波焊接方法进行运动,其中,为此典型但并不是必需地应用在20kHz至40kHz之间的范围内的频率。
图2示出根据本发明的设备1的第二设计方案,其具有待连接的物体,在此是功率半导体模块的底部元件6,该底部元件构造为具有位于其上的基底60的底板68。该底板68构造为铜质长方体,对于功率半导体模块来说,这是本领域常见的底板构造方案。底板68具有机械稳定性,其在设备1的这个设计方案中不需要形式为气动抽吸装置的保持装置3。因此,在不对普遍性进行限制的情况下,保持装置3在此仅构造为夹持装置30,该夹持装置在此将力直接施加到铜质长方体上而不是基底60上。
在此,除了铜质长方体68(也就是基底60下方的底板)以外,待连接的物体与根据图1的物体相同。因此,在此示出了功率半导体模块的带有底板的部分。
类似于图1,联接元件80与基底连接,该联接元件以及配属的定位装置4和超声焊极5按图1来设计。
支座2同样按图1构造,但在此像已经提及的那样,不具有气动保持装置32。
由于第二子支座22在两个设计方案中构造为具有在10N/mm2到500N/mm2之间的弹性模量的弹性成形体,所以底部元件6,也就是说基底60或者底板68(带有布置在其上的基底60)在焊接过程中可以进行受到强烈阻尼的振荡。由此,焊接过程因而是平缓的,力峰值同样以受到阻尼的方式影响实际的焊接连接。由此,一方面改善了连接质量,并且同时防止了对待连接的物体的预先损坏。
尤其是针对如下功率半导体模块基底60,这种类型的保护性的焊接连接是有利的,该基底由工业陶瓷64构成,其具有布置在两个主面上的金属层、优选铜覆层62、66,该金属层至少在基底的一侧上构造成导体迹线62。此外,铜覆层62、66以本领域常见的方式借助直接键合法与绝缘材料体64连接,其中,金属层62、66在绝缘材料体64上的附着力是有限的,并且该附着力可能会由于本领域常见的焊接过程而在过大的力作用下至少局部被超过。这尤其经常在这样制造的功率半导体模块连续运行时导致过早出现故障,也就是说导致使用寿命缩短。根据本发明的设备1防止了在焊接过程期间导体迹线62与绝缘材料体64的连接部的超载。
在根据图1和图2的两个设备1的具体情况下,第二子支座22是长方体状的由基于聚醚的聚氨酯弹性体构成的成形体,具有2±0.2cm的厚度、80±5的肖氏硬度A、并且具有70±10N/mm2的弹性模量。
图3示出底板68的剖视图以及俯视图,该底板具有两个位于其上的根据本发明制造的第一功率半导体模块基底60。在此,底板68在其拐角处分别具有用于紧固在冷却体上的凹部680。为了平衡在运行期间由热引起的应力,底板68在纵向方向上具有第一预先弯曲部682,从而在底板的中部构造出朝向冷却体的隆起。这种类型的隆起在此应当是凸的并且沿着双箭头构造,其中,隆起的最大处位于双箭头中间。
图4示出底板68的剖视图以及俯视图,该底板具有三个位于其上的根据本发明制造的第二功率半导体模块基底60。在此,底板68在其纵向侧分别具有三个用于紧固在冷却体上的凹部680。为了平衡在运行期间由热引起的应力,底板在纵向方向上具有两个凸的第一预先弯曲部682,并且与之垂直地在横向方向上具有两个凸的第二预先弯曲部684。
此外,没有示出的是:根据图3和图4的功率半导体模块具有多个用于与外部电连接的负载联接元件,其中,相应的负载联接元件具有接触脚,该接触脚以焊接技术与基底60的导体迹线的配属的接触部连接。相应的负载联接元件和功率半导体模块的底板一样都由铜构成。
Claims (21)
1.一种用于以焊接技术将联接元件(80)与基底(60)的导体迹线(62)连接的设备(1),其中,所述设备具有:
·支座(2),所述支座用于布置底部元件(6),所述底部元件构造为基底(60)或构造为具有布置在其上的基底(60)的底板(68),其中,所述支座(2)具有第一子支座(20)和第二子支座(22),其中所述第一子支座(20)是具有在50kN/mm2至300kN/mm2之间的弹性模量的金属成形体,而所述第二子支座(22)是具有在10N/mm2至500N/mm2之间的弹性模量的弹性成形体,并且其中,所述底部元件(6)安设在所述第二子支座(22)上;
·保持装置(3),所述保持装置被构造成用于将所述底部元件(6)固定在所述支座(2)上;
·超声焊极(5);
·定位装置(4),所述定位装置用于将所述联接元件(80)相对所述基底(60)定位,从而使所述联接元件(80)的接触脚(82)安设在所述基底(60)的导体迹线(62)的接触部(620)上,并且借助所述超声焊极(5)与所述接触部连接。
2.根据权利要求1所述的设备,其中,
所述底部元件(6)仅安设在所述第二子支座(22)上。
3.根据权利要求1或2所述的设备,其中,
所述第二子支座(22)的弹性模量在25N/mm2至100N/mm2之间。
4.根据权利要求1或2所述的设备,其中,
所述第一子支座和所述第二子支座(20、22)以机械的方式相互连接。
5.根据权利要求1或2所述的设备,其中,
所述第一子支座和所述第二子支座(20、22)借助螺纹连接件相互连接。
6.根据权利要求1或2所述的设备,其中,
所述第二子支座(22)具有0.2cm的最小厚度。
7.根据权利要求1或2所述的设备,其中,
所述第二子支座(22)具有1cm的最小厚度。
8.根据权利要求1或2所述的设备,其中,
所述保持装置(3)构造为机械夹持装置(30),并且替选或附加地构造为气动式抽吸装置(32)。
9.根据权利要求1或2所述的设备,其中,
所述接触部(620)至少具有2mm2的面积。
10.根据权利要求1或2所述的设备,其中,
所述接触部(620)至少具有5mm2的面积。
11.根据权利要求1或2所述的设备,其中,
所述第二子支座(22)具有肖氏A 60至肖氏D 80的硬度。
12.根据权利要求1或2所述的设备,其中,
所述第二子支座(22)具有肖氏A 80至肖氏A 95的硬度。
13.根据权利要求1或2所述的设备,其中,
所述第二子支座(22)由塑料构成。
14.根据权利要求1或2所述的设备,其中,
所述第二子支座(22)由聚氨酯构成。
15.根据权利要求1或2所述的设备,其中,
所述第二子支座(22)由聚氨酯弹性体构成。
16.根据权利要求15所述的设备,其中,
所述聚氨酯弹性体是基于聚醚的聚氨酯弹性体。
17.一种用于制造功率半导体模块的方法,所述功率半导体模块具有底部元件(6),所述底部元件构造为基底(60)或构造为具有布置在其上的基底(60)的底板(68),所述功率半导体模块还具有用于电连接的联接元件(80),其中,所述联接元件(80)具有接触脚(82),所述接触脚借助根据权利要求1至16中任一项所述的设备与所述基底(60)的导体迹线(62)的配属的接触部(620)以焊接技术连接。
18.根据权利要求17所述的方法,其中,
所述联接元件(80)由铜或铜合金构成。
19.根据权利要求17或18所述的方法,其中,
所述导体迹线(62)由铜或铜合金构成。
20.根据权利要求17或18所述的方法,其中,
所述底部元件(6)在纵向方向上具有至少一个第一预先弯曲部(682)。
21.根据权利要求20所述的方法,其中,
所述底部元件(6)在横向方向上具有至少一个第二预先弯曲部(684)。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545298A (zh) * | 2012-07-09 | 2014-01-29 | 赛米控电子股份有限公司 | 具有至少一个减小应力的适配元件的功率半导体模块 |
DE102012213567A1 (de) * | 2012-08-01 | 2014-02-06 | Infineon Technologies Ag | Verfahren zum verbinden eines anschlusselements mit einer metallisierung und verfahren zur herstellung eines halbleitermoduls |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3650454A (en) * | 1967-07-06 | 1972-03-21 | Western Electric Co | Device for bonding with a compliant medium |
US4638937A (en) | 1985-04-22 | 1987-01-27 | Gte Communication Systems Corporation | Beam lead bonding apparatus |
US5195237A (en) * | 1987-05-21 | 1993-03-23 | Cray Computer Corporation | Flying leads for integrated circuits |
US4848639A (en) * | 1988-09-29 | 1989-07-18 | Ag Communication Systems Corporation | Compliant pad for use in tape automated bonding process |
JPH05109827A (ja) * | 1991-03-19 | 1993-04-30 | Rohm Co Ltd | 加熱加圧装置 |
US6019154A (en) * | 1996-09-20 | 2000-02-01 | Motorola, Inc. | Self leveling operation stage for ultrasonic welding |
EP1011132A2 (en) * | 1998-12-18 | 2000-06-21 | Ford Motor Company | Ultrasonic bumping of electronic components |
TW504779B (en) * | 1999-11-18 | 2002-10-01 | Texas Instruments Inc | Compliant wirebond pedestal |
DE10103084B4 (de) | 2001-01-24 | 2006-08-03 | Infineon Technologies Ag | Halbleitermodul und Verfahren zu seiner Herstellung |
JP4599929B2 (ja) * | 2004-08-03 | 2010-12-15 | 富士電機システムズ株式会社 | 電力用半導体装置の製造方法 |
JP2006135249A (ja) | 2004-11-09 | 2006-05-25 | Fujitsu Ltd | 超音波実装方法およびこれに用いる超音波実装装置 |
WO2010057016A2 (en) * | 2008-11-13 | 2010-05-20 | Orthodyne Electronics Corporation | Semiconductor device support for bonding |
DE102009030115B3 (de) * | 2009-06-22 | 2010-09-02 | Leonhard Kurz Stiftung & Co. Kg | Fügevorrichtung |
JP5672707B2 (ja) * | 2010-02-01 | 2015-02-18 | 富士電機株式会社 | 半導体装置の製造方法 |
JP5895337B2 (ja) * | 2010-09-15 | 2016-03-30 | セイコーエプソン株式会社 | ロボット |
JP2013069748A (ja) * | 2011-09-21 | 2013-04-18 | Toshiba Corp | ベースプレートおよび半導体装置 |
JP5406974B2 (ja) * | 2012-12-03 | 2014-02-05 | デクセリアルズ株式会社 | 熱圧着装置及び電気部品の実装方法 |
-
2014
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-
2015
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545298A (zh) * | 2012-07-09 | 2014-01-29 | 赛米控电子股份有限公司 | 具有至少一个减小应力的适配元件的功率半导体模块 |
DE102012213567A1 (de) * | 2012-08-01 | 2014-02-06 | Infineon Technologies Ag | Verfahren zum verbinden eines anschlusselements mit einer metallisierung und verfahren zur herstellung eines halbleitermoduls |
Non-Patent Citations (1)
Title |
---|
NEUE WERKSTOFFVERBUNDE DURCH ULTRASCHALLSCHWEISSEN;Roeder et al.;《TECHNOLOGIE UND MANAGEMENT》;19950101;31-37页 |
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