JP6424114B2 - 接続要素を溶接によってパワー半導体モジュールの基板に接続する装置及びそれに関連する方法 - Google Patents
接続要素を溶接によってパワー半導体モジュールの基板に接続する装置及びそれに関連する方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 49
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000003466 welding Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 16
- 239000004020 conductor Substances 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 229920003225 polyurethane elastomer Polymers 0.000 claims description 5
- 230000003449 preventive effect Effects 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 230000006872 improvement Effects 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000005493 welding type Methods 0.000 description 1
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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- B23K2101/00—Articles made by soldering, welding or cutting
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- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
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Description
基板の形態、あるいは基板がその上に配置されるベースプレートの形態である下部要素を配置するための支台と、
前記支台に前記下部要素を固定するように設計された保持装置と、
ソノトロードと、
前記接続要素の接触端が、前記基板の前記導体トラックにある接点の上に載り、前記ソノトロードを用いて前記接点に接続するように、前記接続要素を前記基板に関して位置決めするための位置決め装置とを有し、
前記支台は、第1及び第2の部分支台を有し、前記第1の部分支台は、弾性率が50〜300kN/mm2の金属成形体であり、前記第2の部分支台は、弾性率が10〜500N/mm 2 の弾性成形体であり、前記下部要素は、前記第2の部分支台、特にもっぱら前記第2の部分支台の上にある。
金属表面コーティングを有する銅からなる。その金属表面コーティングは、慣用技術であって、具体的に銀又はニッケルからなり、必ずしも表面全部を覆っていない。
2 支台
3 保持装置
4 位置決め装置
5 ソノトロード
6 下部要素
20 第1の部分支台
22 第2の部分支台
30 保持装置(クランプ装置)
32 保持装置(空気圧吸気装置)
40、42 2つの部分
60 基板
62 積層(導体トラック)
64 絶縁材料体(工業用セラミック)
66 (金属)積層
68 ベースプレート(直方体)
70 パワー半導体素子
80 (負荷)接続要素
82 接触端
620 接点
680 凹部
682 第1のプリベント部分
684 第2のプリベント部分
Claims (14)
- 接続要素(80)を基板(60)の導体トラック(62)に溶接によって接続するための装置(1)であって、
基板(60)の形態、あるいは基板(60)がその上に配置されるベースプレート(68)の形態である下部要素(6)を配置するための支台(2)と、
前記支台(2)に前記下部要素(6)を固定するように設計された保持装置(3)と、
ソノトロード(5)と、
前記接続要素(80)の接触端(82)が、前記基板(60)の導体トラック(62)にある接点(620)の上に載り、前記ソノトロード(5)を用いて前記接点に接続するように、前記接続要素(80)を前記基板(60)に関して位置決めするための位置決め装置(4)とを有し、
前記支台(2)は、第1及び第2の部分支台(20、22)を有し、
前記第1の部分支台(20)は、弾性率が50〜300kN/mm2の金属成形体であり、前記第2の部分支台(22)は、弾性率が10〜500N/mm 2 の弾性成形体であり、
前記下部要素(6)は、前記第2の部分支台(22)の上にあることを特徴とする装置。 - 前記下部要素(6)は、もっぱら前記第2の部分支台(22)の上にあることを特徴とする請求項1に記載の装置。
- 前記第2の部分支台(22)の弾性率が、25〜100N/mm2の間にあることを特徴とする請求項1又は2に記載の装置。
- 前記第1及び第2の部分支台(20、22)が互いに機械的に接続され、好ましくは、ねじ接続であることを特徴とする請求項1乃至3のいずれか一項に記載の装置。
- 前記第2の部分支台は、0.2cmの最小肉厚を有し、好ましくは1cmであることを特徴とする請求項1乃至4のいずれか一項に記載の装置。
- 前記保持装置(3)は機械的クランプ装置の形態であって、代替として、又は加えて、空気圧吸気装置の形態であることを特徴とする請求項1乃至5のいずれか一項に記載の装置。
- 前記接点(620)は少なくとも2mm2、好ましくは5mm2の表面積を有することを特徴とする請求項1乃至6のいずれか一項に記載の装置。
- 前記第2の部分支台(22)が、ショアA60〜ショアD80の硬度を有し、好ましくはショアA80〜ショアA95を有することを特徴とする請求項1乃至7のいずれか一項に記載の装置。
- 前記第2の部分支台(22)は、プラスチック、好ましくはポリウレタン、好ましくはポリウレタン系エラストマー、好ましくはポリエーテル系ポリウレタンエラストマーからなることを特徴とする請求項1乃至8のいずれか一項に記載の装置。
- 基板(60)の形態、あるいは基板(60)がその上に配置されるベースプレート(68)の形態である下部要素(6)と、電気接続のための接続要素(80)とを有するパワー半導体モジュールを製造する方法において、前記接続要素(80)は接触端(82)を有し、前記接触端(82)は、前記基板(60)の導体トラック(62)の関連する接点(620)に、請求項1乃至9のいずれか一項に記載の装置によって溶接されて接続されることを特徴とする方法。
- 前記接続要素(80)は、銅又は銅合金からなることを特徴とする請求項10に記載の方法。
- 前記導体トラック(62)は、銅又は銅合金からなることを特徴とする請求項10又は11に記載の方法。
- 前記下部要素(6)は、長手方向に少なくとも第1のプリベント部分(682)を有することを特徴とする請求項10乃至12のいずれか一項に記載の方法。
- 前記下部要素(6)は、横断方向に少なくとも第2のプリベント部分(684)を有することを特徴とする請求項10乃至13のいずれか一項に記載の方法。
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DE102014104496.7 | 2014-03-31 | ||
DE102014104496.7A DE102014104496B4 (de) | 2014-03-31 | 2014-03-31 | Vorrichtung zur schweißtechnischen Verbindung von Anschlusselementen mit dem Substrat eines Leistungshalbleitermoduls und zugehöriges Verfahren |
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US (1) | US20150306701A1 (ja) |
EP (1) | EP2927940B1 (ja) |
JP (1) | JP6424114B2 (ja) |
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CN109287129B (zh) * | 2017-05-19 | 2022-04-08 | 新电元工业株式会社 | 电子模块 |
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JP2015198250A (ja) | 2015-11-09 |
EP2927940B1 (de) | 2019-08-21 |
CN104952748B (zh) | 2019-02-26 |
CN104952748A (zh) | 2015-09-30 |
DE102014104496B4 (de) | 2019-07-18 |
EP2927940A1 (de) | 2015-10-07 |
US20150306701A1 (en) | 2015-10-29 |
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