CN104911544A - Temperature control disc - Google Patents
Temperature control disc Download PDFInfo
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- CN104911544A CN104911544A CN201510359908.6A CN201510359908A CN104911544A CN 104911544 A CN104911544 A CN 104911544A CN 201510359908 A CN201510359908 A CN 201510359908A CN 104911544 A CN104911544 A CN 104911544A
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- heating plate
- temperature control
- disk body
- temperature
- disc
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Abstract
The invention provides a temperature control disc. The temperature control disc is mainly used for solving the technical problem of thin film failure due to relatively low heat exchange efficiency and yield of the existing semiconductor coating equipment and not-uniform wafer temperature. The temperature control disc mainly comprises three parts, namely an upper heating disc body, a lower heating disc body and a heating disc base. The parts are connected by virtue of welding. The temperatures of the heating disc and the wafer are controlled by use of a medium and a heat conducting gas; each part has a different structure, so that medium channels and heat conducting gas channels of the heating disc can be formed, and furthermore, the temperature of the heating disc can be controlled; the temperature control disc is cooled and heated by use of a medium; and due to the circulation of the medium, the temperature of the heating disc is controlled; the medium channels are distributed inside the heating disc. The temperature control disc is reasonable in structure; the heat conducting gas inlet structure of the temperature control disc is capable of fully charging the heat conducting gas between the heating disc and the wafer quickly and evenly so that the temperature of the heating disc can be transferred to the wafer quickly and evenly or the temperature of the wafer can be quickly transferred to the heating disc for dissipation. The temperature control disc can be widely applied to the technical field of semiconductor thin-film deposition.
Description
Technical field
The present invention relates to a kind of semiconductor coated film equipment temperature controllable heating plate structure, its inside comprises heating plate media channel, heat transfer gas passage, to realize quick, accurate, the equal control to wafer temperature.Belong to semiconductor film deposition applications and manufacturing technology field.
Background technology
Semiconductor devices often needs the temperature making wafer and chamber heat or maintain required for deposition reaction when carrying out deposition reaction, so heating plate must possess heating arrangement to meet to the object of wafer preheating.Most of semiconductor thin film deposition equipment, in deposition process, also have plasma body participate in deposition reaction, because of the fault offset reacted between the release of energy of plasma and chemical gas, the temperature of heating plate and wafer can constantly can rise along with radio frequency and the increase temperature of process time, if carrying out the technique under uniform temp, need to wait for that heating plate just can carry out after dropping to identical temperature, like this time of meeting at substantial, the production capacity of equipment is relatively low.If the temperature of wafer and heating plate is too fast, the temperature of wafer and heating plate can exceed the temperature of bearing needed for film, causes film failure.
In order to solve the problem that in technological process, the too fast cooling of heating plate temperature rise is slow, we need the system that automatically can regulate heating plate temperature, ensure the temperature of heating plate.In order to better control the temperature of wafer, we need the temperature of wafer to be delivered on heating plate, are controlled the temperature of crystal column surface by the temperature controlling heating plate.But mostly semiconductor film deposition reaction is to carry out under vacuum, vacuum condition thermal conduction is mainly by radiation, and heat conduction efficiency is low, and heat can be assembled at crystal column surface.In order to better, heat on wafer is delivered on heating plate, needs between heating plate and wafer to pass into one deck heat-conducting medium, to carry out heat exchange fast between heating plate and wafer, the homogeneity of wafer temperature can better be improved simultaneously.
Summary of the invention
The present invention for the purpose of solving the problem, mainly solve existing semiconductor coated film equipment heat exchanger effectiveness and production capacity lower, wafer temperature not evenly causes the technical problem of film failure.
For achieving the above object, the present invention adopts following technical proposals: temperature control dish, mainly comprises three parts, that is: disk body 3 and heating plate pedestal 4 under disk body 1, heating plate on heating plate.The mode of welding is adopted to connect between each parts.The present invention adopts medium and heat transfer gas to carry out temperature control to heating plate and wafer.Each parts there is different structures, forms media channel and the heat transfer gas passage of heating plate, and then control the temperature of heating plate.This heating plate adopts medium to carry out cooling and heating, and the circulation utilized the medium, carries out the control of temperature to heating plate, media channel is distributed in heating plate inside.In order to better control the temperature of wafer, heating plate inside also has heat transfer gas passage, and heat transfer gas passage wants large compared with media channel apart from the distance of card apart from the distance of card, is to be delivered on heating plate by the heat on wafer better like this.Can the temperature of more effective control wafer.
Beneficial effect of the present invention and feature:
This temperature control dish is rational in infrastructure, realizes the control to heating plate temperature by the temperature controlling medium.Heat transfer gas air intake structure can to make between heating plate and wafer fast, uniform falling heat-transfer gas is transmitted to wafer fast, uniformly to make the temperature of heating plate, or the temperature of wafer is conducted to rapidly on heating plate and derive.Can be widely used in semiconductor film deposition arts.
Accompanying drawing explanation
Fig. 1 is heating plate structural blast figure.
Fig. 2 is heating plate upper disk surface structural representation.
Fig. 3 is card structural representation under heating plate.
Fig. 4 is card sectional view under heating plate.
Shown in figure:
1, disk body on heating plate; 2, ceramics pole; 3, disk body under heating plate; 4, heating plate pedestal; 5, through hole; 6, thermally conductive gas body opening; 7, media channel; 8, ceramic post holes; 9, heat transfer gas production well; 10, medium import; 11, media outlet; 12, thermocouple hole; 13, the installation of TC threaded hole; 14, heat transfer gas distributes passage.
Below in conjunction with drawings and Examples, the present invention is further illustrated.
Embodiment
Embodiment
As Figure 1-4, temperature control dish, mainly comprises three parts, that is: disk body 3 and heating plate pedestal 4 under disk body 1, heating plate on heating plate.
On described heating plate, the lower surface of disk body 1 has media channel hole 7 (layout of media channel as shown in Figure 2); On described heating plate, the lower surface of disk body 1 also has meter the thermally conductive gas body opening 6 of word distribution and a thermocouple hole 12; On described heating plate, the lower surface of disk body 1 is shaped with ceramic post holes 8.
Under described heating plate, disk body 3 is provided with heat transfer gas distribution passage 14, and be used for distributing conduction gas, sectional view as shown in Figure 4.The card of distributing passage 14 correspondence in heat transfer gas has heat transfer gas production well 9, and heat transfer gas production well 9 is corresponding with thermally conductive gas body opening 6; Under the heating plate that the two ends of media channel 7 are corresponding, disk body 3 place has medium import 10 and media outlet 11; The installation of TC threaded hole 13 is being had with on disk body 3 under the corresponding heating plate in thermocouple hole 12 position; Under the heating plate corresponding with ceramic post holes 8, disk body 3 has through hole 5.
The inside of heating plate pedestal 4 has corresponding media channel and thermocouple mounting hole.By ceramics pole 2, be arranged in ceramic post holes 8, under the corresponding heating plate of ceramics pole 2, the through hole 5 of disk body 3, then welds disk body on heating plate 1 with disk body under heating plate 3, weld with heating plate pedestal 4 again after having welded, complete the processing of whole temperature control dish.
Claims (4)
1. a temperature control dish, it is characterized in that: it mainly comprises three parts, that is: disk body on heating plate, disk body and heating plate pedestal under heating plate, the mode of welding is adopted to connect between each parts, medium and heat transfer gas is adopted to carry out temperature control to heating plate and wafer, each parts there is different structures, form media channel and the heat transfer gas passage of heating plate, and then control the temperature of heating plate, this temperature control dish adopts medium to carry out cooling and heating, the circulation utilized the medium, heating plate is carried out to the control of temperature, media channel is distributed in heating plate inside.
2. temperature control dish as claimed in claim 1, is characterized in that: on described heating plate, the lower surface of disk body has media channel hole; On described heating plate, the lower surface of disk body also has meter the thermally conductive gas body opening of word distribution and a thermocouple hole; On described heating plate, the lower surface of disk body is shaped with ceramic post holes.
3. temperature control dish as claimed in claim 1, it is characterized in that: under described heating plate, disk body is provided with heat transfer gas distribution passage, be used for distributing conduction gas, the card of distributing passage corresponding in heat transfer gas has heat transfer gas production well, heat transfer gas production well is corresponding with thermally conductive gas body opening, under the heating plate that the two ends of media channel are corresponding, disk body place has medium import and media outlet, under heating plate corresponding to thermocouple hole position, disk body has the installation of TC threaded hole, under the heating plate corresponding with ceramic post holes, disk body has through hole.
4. temperature control dish as claimed in claim 1, it is characterized in that: the inside of described heating plate pedestal has corresponding media channel and thermocouple mounting hole, by ceramics pole, be arranged in ceramic post holes, the through hole of disk body under the corresponding heating plate of ceramics pole, then disk body on heating plate is welded with disk body under heating plate, weld with heating plate pedestal again after having welded, complete the processing of whole temperature control dish.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510359908.6A CN104911544B (en) | 2015-06-25 | 2015-06-25 | Temperature control disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510359908.6A CN104911544B (en) | 2015-06-25 | 2015-06-25 | Temperature control disk |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104911544A true CN104911544A (en) | 2015-09-16 |
| CN104911544B CN104911544B (en) | 2017-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510359908.6A Active CN104911544B (en) | 2015-06-25 | 2015-06-25 | Temperature control disk |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106609365A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Two-channel temperature control device for semiconductor coating equipment |
| CN106609354A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Temperature controllable base table of semiconductor coating equipment |
| CN106611733A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | A multi-inlet cavity heating bracing frame |
| CN106609364A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Thin film deposition equipment heating base plate of circulation medium automatic temperature control structure |
| CN106637139A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Flow stabilization chamber cavity temperature controllable matrix carrier structure |
| CN106637132A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Wafer reaction table capable of achieving automatic temperature control and controlling conductive temperature of heat conduction gas by means of medium circulation |
| CN106637142A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Flow stabilization chamber temperature control disk |
| CN106637144A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Cavity temperature control disc with air exhaust holes |
| CN107686978A (en) * | 2016-08-03 | 2018-02-13 | 豪泽尔涂层技术有限公司 | Equipment for coated substrates |
| CN110894591A (en) * | 2019-11-12 | 2020-03-20 | 江苏长电科技股份有限公司 | Cooling disc and cooling method used in magnetron sputtering process |
| CN115418628A (en) * | 2022-08-29 | 2022-12-02 | 拓荆科技股份有限公司 | Gas path system of heating plate, control method and storage medium |
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| CN201817546U (en) * | 2010-10-28 | 2011-05-04 | 理想能源设备(上海)有限公司 | Substrate supporting base and chemical vapor deposition equipment applying same |
| CN202905683U (en) * | 2012-09-19 | 2013-04-24 | 中微半导体设备(上海)有限公司 | Substrate bearing device capable of uniformly adjusting surface temperature |
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| EP0467390A1 (en) * | 1990-07-20 | 1992-01-22 | Tokyo Electron Limited | Support table for plate-like body and processing apparatus using the table |
| CN1833312A (en) * | 2003-04-07 | 2006-09-13 | 东京毅力科创株式会社 | Loading table and heat treating apparatus having the loading table |
| CN101919029A (en) * | 2008-01-18 | 2010-12-15 | 高美科株式会社 | Substrate-supporting device, and a substrate-processing device having the same |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106611733B (en) * | 2015-10-22 | 2020-07-31 | 沈阳拓荆科技有限公司 | Many imports cavity heating support frame |
| CN106609354A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Temperature controllable base table of semiconductor coating equipment |
| CN106611733A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | A multi-inlet cavity heating bracing frame |
| CN106609364A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Thin film deposition equipment heating base plate of circulation medium automatic temperature control structure |
| CN106609365A (en) * | 2015-10-22 | 2017-05-03 | 沈阳拓荆科技有限公司 | Two-channel temperature control device for semiconductor coating equipment |
| CN106637139A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Flow stabilization chamber cavity temperature controllable matrix carrier structure |
| CN106637142A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Flow stabilization chamber temperature control disk |
| CN106637144A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Cavity temperature control disc with air exhaust holes |
| CN106637132B (en) * | 2015-10-29 | 2020-01-10 | 沈阳拓荆科技有限公司 | Wafer reaction table with circulating medium for automatic temperature control and heat conduction gas for temperature conduction |
| CN106637132A (en) * | 2015-10-29 | 2017-05-10 | 沈阳拓荆科技有限公司 | Wafer reaction table capable of achieving automatic temperature control and controlling conductive temperature of heat conduction gas by means of medium circulation |
| CN107686978A (en) * | 2016-08-03 | 2018-02-13 | 豪泽尔涂层技术有限公司 | Equipment for coated substrates |
| KR20180015590A (en) * | 2016-08-03 | 2018-02-13 | 아이에이치아이 하우저 테크노 코팅 비브이 | Apparatus for coating substrates |
| US11131019B2 (en) | 2016-08-03 | 2021-09-28 | Ihi Hauzer Techno Coating B.V. | Apparatus for coating substrates |
| KR102385751B1 (en) | 2016-08-03 | 2022-04-11 | 아이에이치아이 하우저 테크노 코팅 비브이 | Apparatus for coating substrates |
| CN110894591A (en) * | 2019-11-12 | 2020-03-20 | 江苏长电科技股份有限公司 | Cooling disc and cooling method used in magnetron sputtering process |
| CN115418628A (en) * | 2022-08-29 | 2022-12-02 | 拓荆科技股份有限公司 | Gas path system of heating plate, control method and storage medium |
| CN115418628B (en) * | 2022-08-29 | 2023-08-18 | 拓荆科技股份有限公司 | Air path system of heating plate, control method and storage medium |
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Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: 110179 3rd floor, No.1-1 Xinyuan street, Hunnan New District, Shenyang City, Liaoning Province Patentee before: PIOTECH Co.,Ltd. |