CN106544648A - Without air flue type temperature control disk - Google Patents
Without air flue type temperature control disk Download PDFInfo
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- CN106544648A CN106544648A CN201510589568.6A CN201510589568A CN106544648A CN 106544648 A CN106544648 A CN 106544648A CN 201510589568 A CN201510589568 A CN 201510589568A CN 106544648 A CN106544648 A CN 106544648A
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- Prior art keywords
- heating dish
- disk
- disk body
- temperature control
- heating
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Abstract
Without air flue type temperature control disk, mainly solve existing semiconductor coated film equipment heat exchanger effectiveness and production capacity is relatively low, wafer temperature not enough uniformly causes the technical problem of thin film failure.It mainly includes three parts, i.e.,:Disk body and heating dish pedestal under disk body, heating dish in heating dish.It is attached by the way of welding between each part.The present invention carries out temperature control using medium heating dish.There are different structures on each part, form the media channel of heating dish, and then control the temperature of heating dish.This heating dish is cooled down using medium and is heated, the circulation for utilizing the medium, and enters the control of trip temperature to heating dish, and media channel is distributed in inside heating dish.The inside of the present invention includes heating dish media channel, heat transfer gas passage, to realize to the quick, accurate of wafer temperature, equal control.It is relatively low with simple structure, cost and the characteristics of be easily achieved.Can be widely used in semiconductive thin film deposit manufacture and applied technical field.
Description
Technical field
The present invention relates to a kind of semiconductor coated film equipment controllable temperature heating dish, is exactly a kind of depletion of QI
Road formula temperature control disk, belongs to semiconductive thin film deposition applications and manufacturing technology field.
Background technology
Semiconductor equipment generally requires to make wafer and chamber be heated or maintained at sinking when deposition reaction is carried out
Temperature required for product reaction, so heating dish must possess heating arrangement to meet to the mesh of wafer preheating
's.Most of semiconductor thin film deposition equipments, also have plasma in deposition process and participate in deposition instead
Should, because energy of plasma release and chemical gas between the energy release reacted, heating dish and wafer
Temperature can constantly can rise with the increase temperature of radio frequency and process time, if carrying out phase equality of temperature
Technique under degree, needs to wait heating dish just carry out after dropping to identical temperature, can so expend a large amount of
Time, the production capacity of equipment compares relatively low.Too fast, the wafer if temperature of wafer and heating dish heats up
The temperature is subjected to by thin film can be exceeded with the temperature of heating dish, cause thin film to fail.
In order to solve the problems, such as that the too fast cooling of heating dish temperature rise is slow in technical process, it would be desirable to which having can be certainly
The dynamic system for adjusting heating dish temperature, ensures the temperature of heating dish.In order to preferably control the temperature of wafer
Degree, it would be desirable to by the temperature transfer of wafer to heating dish, controlled by the temperature of control heating dish
The temperature of crystal column surface.But semiconductive thin film deposition reaction is to carry out under vacuum mostly, vacuum condition
, mainly by radiation, heat conduction efficiency is low for conduction of heat, and heat can be assembled in crystal column surface.In order to preferably will
Heat transfer on wafer needs to be passed through one layer of heat-conducting medium in heating dish, between heating dish and wafer, with
Just heat exchange is rapidly performed by between heating dish and wafer, while the uniformity of wafer temperature preferably can be improved.
The content of the invention
The present invention mainly solves existing semiconductor coated film equipment heat exchange effect for the purpose of solving the above problems
Rate and production capacity are relatively low, and wafer temperature not enough uniformly causes the technical problem of thin film failure.
For achieving the above object, the present invention adopts following technical proposals:It is without air flue type temperature control disk, main to wrap
Three parts are included, i.e.,:Disk body and heating dish pedestal under disk body, heating dish in heating dish.Between each part
It is attached by the way of welding.The present invention carries out temperature control using medium heating dish.Each part
On have a different structures, form the media channel of heating dish, and then control the temperature of heating dish.This heating
Disk is cooled down using medium and is heated, the circulation for utilizing the medium, and enters the control of trip temperature to heating dish,
Media channel is distributed in inside heating dish.
Beneficial effects of the present invention and feature:
The inside of the present invention includes heating dish media channel, heat transfer gas passage, to realize to wafer temperature
Quick, the accurate, equal control of degree.Spy that is relatively low with simple structure, cost and being easily achieved
Point.Can be widely used in semiconductive thin film deposit manufacture and applied technical field.
Description of the drawings
Fig. 1 is the Structure explosion diagram of the present invention.
Fig. 2 is body structure schematic diagram in heating dish in Fig. 1.
Fig. 3 is disk body structural representation under heating dish in Fig. 1.
Shown in figure:
1st, disk body in heating dish;2nd, ceramics pole;3rd, disk body under heating dish;4th, heating dish pedestal;5、
Through hole;6th, media channel;7th, ceramic post holes;8th, medium import;9th, media outlet;10th, heat
Galvanic couple hole;11st, the installation of TC screwed hole.
The present invention is further illustrated with reference to the accompanying drawings and examples.
Specific embodiment
Embodiment
As Figure 1-3, without air flue type temperature control disk, three parts are mainly included, i.e.,:Disk in heating dish
Disk body 3 and heating dish pedestal 4 under body 1, heating dish.
In the heating dish, the lower surface of disk body 1 is provided with media channel hole 6 (layout of media channel such as figure
Shown in 2);In the heating dish, the lower surface of disk body 1 is also provided with a thermocouple hole 10;The heating
On disk, the lower surface of disk body 1 is formed with ceramic post holes 7, and ceramic post holes 7 is matched with ceramics pole 2.
Medium import 8 is provided with disk body 3 under the corresponding heating dish in two ends of media channel 6 and medium goes out
Mouth 9;The installation of TC screwed hole is being provided with disk body 3 under heating dish corresponding with 10 position of thermocouple hole
11;Through hole 5 is provided with disk body 3 with 8 corresponding heating dish of ceramic post holes.
The inside of heating dish pedestal 4 is provided with corresponding media channel and thermocouple mounting hole.By ceramics pole 2,
In ceramic post holes 7, the through hole 5 of disk body 3 under the correspondence heating dish of ceramics pole 2, then by heating dish
Disk body 1 is welded with disk body under heating dish 3, and welding is welded with heating dish pedestal 4 after completing again,
Complete the processing of whole temperature control disk.
Claims (4)
1. without air flue type temperature control disk, it is characterised in that:It mainly includes three parts, i.e.,:Heating dish
Disk body and heating dish pedestal under upper disk body, heating dish, are carried out between each part by the way of welding
Connection, carries out temperature control using medium heating dish, has different structures on each part, forms heating
The media channel of disk, so control heating dish temperature, the heating dish using medium carry out cooling and
The control of trip temperature is entered in heating, the circulation for utilizing the medium to heating dish, and media channel is distributed in heating dish
It is internal.
2. as claimed in claim 1 without air flue type temperature control disk, it is characterised in that:Disk in the heating dish
The lower surface of body is provided with media channel hole;In the heating dish, the lower surface of disk body is also provided with a thermocouple
Hole;In the heating dish, the lower surface of disk body is formed with ceramic post holes, and ceramic post holes is matched with ceramics pole.
3. as claimed in claim 2 without air flue type temperature control disk, it is characterised in that:The media channel
Medium import and media outlet are provided with disk body under the corresponding heating dish in two ends;With thermocouple hole position pair
Answer;Disk body under heating dish corresponding with ceramic post holes
On be provided with through hole.
4. as claimed in claim 1 without air flue type temperature control disk, it is characterised in that:The heating dish pedestal
Inside is provided with corresponding media channel and thermocouple mounting hole, ceramics pole is arranged in ceramic post holes, pottery
Under porcelain knob correspondence heating dish, then disk body in heating dish is welded by the through hole of disk body with disk body under heating dish
Connect, welding is welded with heating dish pedestal after completing again, completes the processing of whole temperature control disk.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510589568.6A CN106544648A (en) | 2015-09-16 | 2015-09-16 | Without air flue type temperature control disk |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510589568.6A CN106544648A (en) | 2015-09-16 | 2015-09-16 | Without air flue type temperature control disk |
Publications (1)
Publication Number | Publication Date |
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CN106544648A true CN106544648A (en) | 2017-03-29 |
Family
ID=58361619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201510589568.6A Pending CN106544648A (en) | 2015-09-16 | 2015-09-16 | Without air flue type temperature control disk |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2615615Y (en) * | 2003-05-10 | 2004-05-12 | 石家庄工大化工设备有限公司 | Heating (cooling) dish |
CN201436515U (en) * | 2006-08-08 | 2010-04-07 | 应用材料股份有限公司 | Base board support assembly |
CN202905683U (en) * | 2012-09-19 | 2013-04-24 | 中微半导体设备(上海)有限公司 | Substrate bearing device capable of uniformly adjusting surface temperature |
CN103374709A (en) * | 2012-04-25 | 2013-10-30 | 绿种子材料科技股份有限公司 | Chemical vapor deposition system |
CN203839351U (en) * | 2014-03-25 | 2014-09-17 | 上海微电子装备有限公司 | Uniformly heating device having cooling function |
CN104878370A (en) * | 2015-05-29 | 2015-09-02 | 沈阳拓荆科技有限公司 | Split type temperature-controllable heating disc structure |
-
2015
- 2015-09-16 CN CN201510589568.6A patent/CN106544648A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2615615Y (en) * | 2003-05-10 | 2004-05-12 | 石家庄工大化工设备有限公司 | Heating (cooling) dish |
CN201436515U (en) * | 2006-08-08 | 2010-04-07 | 应用材料股份有限公司 | Base board support assembly |
CN103374709A (en) * | 2012-04-25 | 2013-10-30 | 绿种子材料科技股份有限公司 | Chemical vapor deposition system |
CN202905683U (en) * | 2012-09-19 | 2013-04-24 | 中微半导体设备(上海)有限公司 | Substrate bearing device capable of uniformly adjusting surface temperature |
CN203839351U (en) * | 2014-03-25 | 2014-09-17 | 上海微电子装备有限公司 | Uniformly heating device having cooling function |
CN104878370A (en) * | 2015-05-29 | 2015-09-02 | 沈阳拓荆科技有限公司 | Split type temperature-controllable heating disc structure |
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Application publication date: 20170329 |