CN106637142A - Flow stabilization chamber temperature control disk - Google Patents
Flow stabilization chamber temperature control disk Download PDFInfo
- Publication number
- CN106637142A CN106637142A CN201510718211.3A CN201510718211A CN106637142A CN 106637142 A CN106637142 A CN 106637142A CN 201510718211 A CN201510718211 A CN 201510718211A CN 106637142 A CN106637142 A CN 106637142A
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- Prior art keywords
- heating dish
- stabilier
- disk
- heating
- hole
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Abstract
The invention relates to a flow stabilization chamber temperature control disk, which comprises a heating disk upper disk surface, a ceramic column, a heating disk flow stabilization plate and a heating disk base, wherein the upper end of the ceramic column is fixed on the lower end of the heating disk upper disk surface, the lower end of the ceramic column penetrates through the heating disk flow stabilization plate and the heating disk base and is fixed with the lower end of the heating disk base, and each member is provided with different structures to form the medium channel and the heat conduction gas channel of the heating disk so as to control the heating disk temperature. According to the present invention, the heating disk performs cooling and heating by using the medium, the heating disk is subjected to temperature control by using the circulation of the medium, and the medium channel is distributed inside the heating disk; and in order to well control the temperature of the wafer, the heat conduction gas channel is arranged inside the heating disk so as to transfer the temperature of the wafer to the heating disk, such that the temperature of the wafer can be effectively controlled.
Description
Technical field
The present invention relates to a kind of semiconductor coated film equipment controllable temperature heats dish structure, it is especially a kind of
Plenum chamber temperature control disk, belongs to semiconductive thin film deposition arts.
Background technology
Semiconductor equipment is generally required to make wafer and chamber heating when deposition reaction is carried out or tieed up
Hold in the temperature required for deposition reaction, thus heating dish must possess heating arrangement with meet to
The purpose of wafer preheating.Mostly semiconductor thin film deposition equipment, also has in deposition process
Gas ions participate in deposition reaction, because energy of plasma release and chemical gas between react
Energy discharges, and the temperature of heating dish and wafer can be with the increase temperature meeting of radio frequency and process time
Constantly rise；If the technique in the case where identical temperature is carried out, need to wait heating dish to drop to phase
Can just carry out after same temperature, so can take a substantial amount of time, the production capacity of equipment is relatively
It is low.If the temperature intensification of wafer and heating dish is too fast, the temperature of wafer and heating dish can exceed
The temperature that thin film is subjected to, causes thin film to fail.
The too fast cooling of heating dish temperature rise is slow in order to solve the problems, such as technical process, it would be desirable to have
The system of heating dish temperature can be automatically adjusted to ensure the temperature of heating dish.In order to more preferable
The temperature of control wafer, it would be desirable to by the temperature transfer of wafer to heating dish, by control
The temperature of heating dish is controlling the temperature of crystal column surface.But semiconductive thin film deposition reaction be mostly
Carry out under vacuum condition, mainly by radiation, heat conduction efficiency is low, heat for vacuum condition conduction of heat
Can be in crystal column surface aggregation.In order to preferably by the heat transfer on wafer to heating dish, plus
Need to be passed through one layer of heat-conducting medium between hot plate and wafer, quickly to enter between heating dish and wafer
Row heat exchange, while the uniformity of wafer temperature can preferably be improved.
The content of the invention
In order to solve above-mentioned the deficiencies in the prior art, the invention provides a kind of plenum chamber temperature control
Disk.
For achieving the above object, the technical solution used in the present invention is：A kind of plenum chamber temperature control disk,
Including heating dish upper disk surface, ceramics pole, heating dish stabilier and heating dish pedestal.Ceramics pole
Upper end is fixed on the lower end of heating dish upper disk surface, the lower end of ceramics pole through heating dish stabilier and
Heating dish pedestal is simultaneously fixed with the lower end of heating dish pedestal.
The heating dish upper disk surface lower surface is provided with heat medium passage, the heat transfer gas of rice word distribution
Hole, thermocouple hole, ceramic post holes, heat medium passage entrance point and a heat medium passage port of export.
It is entirely through hole on the heating dish stabilier, is respectively corresponding with thermally conductive gas body opening
Gas via-hole；Stabilier medium corresponding with heat medium passage entrance point, the heat medium passage port of export enters
Mouth, stabilier media outlet；Stabilier thermocouple hole corresponding with thermocouple hole, and with pottery
The corresponding stabilier ceramics post holes in porcelain knob hole.
The card of disk body is provided with boss under the heating dish, in order to heating dish current stabilization
Plate is welded, under heating dish the edge of disc surfaces have a circle boss, in the position of through hole
Surrounding also has the boss of same height, and still there is identical height the center of disk body in heating dish
Boss, for being sealed with stabilier.Lower disk body medium is had in central boss
Import, lower disk body media outlet, thermocouple screwed hole and heat transfer gas air inlet.
Intermediate formation cavity after disk body welding, becomes plenum chamber under stabilier and heating dish.
It is attached by the way of welding between each part of the present invention.There is difference on each part
Structure, formed heating dish media channel and heat transfer gas passage, and then control heating dish
Temperature.This heating dish is cooled down using medium and heated, the circulation for utilizing the medium, right
Heating dish enters the control of trip temperature, and media channel is distributed in inside heating dish.In order to preferably control
There is heat transfer gas passage the temperature of combinations circle, heating dish inside, can be by the temperature of wafer
Heating dish is passed to, the temperature of wafer can be more effectively controlled.
Description of the drawings
Fig. 1 is the explosive view of the present invention.
Fig. 2 is the structural representation of heating dish upper disk surface.
Fig. 3 is the structural representation of heating dish stabilier.
Fig. 4 is the structural representation of card under heating dish.
In figure：1st, disk body in heating dish；2nd, ceramics pole；3rd, heating dish stabilier；4th, add
Disk body under hot plate；5th, fixing nut；6th, through hole；7th, heating dish stabilier ceramics post holes；8、
Thermally conductive gas body opening；9th, heat medium passage；10th, ceramic post holes；11st, heat medium passage entrance point；12、
The heat medium passage port of export；13rd, thermocouple hole；14 gas via-holes；15th, stabilier medium import；
16th, stabilier media outlet；17th, stabilier thermocouple hole, 18, lower disk body medium import；
19th, heat transfer gas air inlet；20th, lower disk body media outlet；21st, thermocouple screwed hole.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, to the technical side in the embodiment of the present invention
Case carry out clearly, be fully described by, it is clear that described embodiment be only the present invention one
Divide embodiment, rather than the embodiment of whole.Based on the embodiment in the present invention, this area is general
The every other embodiment that logical technical staff is obtained under the premise of creative work is not made,
Belong to the scope of protection of the invention.
As shown in figure 1, a kind of plenum chamber temperature control disk, including heating dish upper disk surface 1, ceramics pole
2nd, heating dish stabilier 3 and heating dish pedestal 4.The upper end of ceramics pole 2 is fixed on heating dish
The lower end of upper disk surface 1, the lower end of ceramics pole 2 is through heating dish stabilier 3 and heating dish pedestal
4 and fixed with the lower end of heating dish pedestal by fixing nut 5.
The lower surface of disk body 1 is provided with heat medium passage 10, layout such as Fig. 2 of passage in heating dish
It is shown；The lower surface of disk body 1 is provided with a meter thermally conductive gas body opening 8, for word distribution in heating dish
Individual thermocouple hole 13；The lower surface of disk body 1 is provided with ceramic post holes 10 and heating agent in heating dish
Channel entrance end 11 and the heat medium passage port of export 12.
It is entirely through hole on heating dish stabilier 3, as shown in figure 3, being respectively and thermally conductive gas
The corresponding gas via-hole 14 of body opening 8, with heat medium passage entrance point 11, the heat medium passage port of export
12 corresponding stabilier medium imports 15, stabilier media outlet 16, with thermocouple hole 13
Corresponding stabilier thermocouple hole 17, and stabilier ceramics pole corresponding with ceramic post holes 10
Hole 7.
Some boss of the card of disk body 4 under the heating dish, in order to heating dish current stabilization
Plate 3 is welded, as shown in figure 4, under heating dish the edge of disc surfaces have a circle boss,
Also have around the position of through hole 6 same height boss, in heating dish disk body 1 center
Still there is mutually level boss position, for being sealed with heating dish stabilier 3.At center
Lower disk body medium import 18, lower disk body media outlet 20, thermocouple spiral shell are had on boss
Pit 21 and heat transfer gas air inlet 19.
Intermediate formation cavity after disk body 4 is welded under heating dish stabilier 3 and heating dish, becomes steady
Flow chamber, is then welding with disk body in heating dish 1, heat medium passage is closed to form pipeline, so
Afterwards ceramics pole is put into into ceramic post holes to be fixed with fixing nut.Complete the processing of heating dish.
Heating agent is flowed into by lower disk body medium import 18, and in heat medium passage, you circulate, and makes whole adding
Hot plate thermally equivalent, realizes the control to heating dish temperature.Heat transfer gas are entered by air inlet
Afterwards, the flow distribution first in current stabilization room, the effect of plenum chamber is to flow out heat transfer gas
Pressure is equal before each heat transfer gas venthole, it is ensured that individual venthole outlet is uniform, then in Jing
Cross each heat transfer gas venthole to flow out, gas is formed between heating dish card and wafer thin
Film, carries out the transmission of heat, controls the temperature of wafer and the uniformity of guarantee wafer temperature.
Claims (1)
1. a kind of plenum chamber temperature control disk, it is characterised in that：Including heating dish upper disk surface, ceramics
Post, heating dish stabilier and heating dish pedestal.The upper end of ceramics pole is fixed on heating dish upper disk surface
Lower end, the lower end of ceramics pole through heating dish stabilier and heating dish pedestal and with heating dish base
The lower end of seat is fixed；The heating dish upper disk surface lower surface is provided with what heat medium passage, rice word were distributed
Thermally conductive gas body opening, thermocouple hole, ceramic post holes, heat medium passage entrance point and a heating agent are logical
The road port of export；It is entirely through hole on the heating dish stabilier, is respectively and thermally conductive gas body opening
Corresponding gas via-hole；Stabilier corresponding with heat medium passage entrance point, the heat medium passage port of export
Medium import, stabilier media outlet；Stabilier thermocouple hole corresponding with thermocouple hole, with
And stabilier ceramics post holes corresponding with ceramic post holes；Set in the card of disk body under the heating dish
Have boss, under heating dish the edge of disc surfaces have a circle boss, around the position of through hole
Also there is the boss of same height, the center of disk body still has mutually level convex in heating dish
Platform, for being sealed with stabilier.Have in central boss lower disk body medium import,
Lower disk body media outlet, thermocouple screwed hole and heat transfer gas air inlet；Stabilier and heating
Intermediate formation cavity after disk body welding, becomes plenum chamber under disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510718211.3A CN106637142A (en) | 2015-10-29 | 2015-10-29 | Flow stabilization chamber temperature control disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510718211.3A CN106637142A (en) | 2015-10-29 | 2015-10-29 | Flow stabilization chamber temperature control disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106637142A true CN106637142A (en) | 2017-05-10 |
Family
ID=58830856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510718211.3A Pending CN106637142A (en) | 2015-10-29 | 2015-10-29 | Flow stabilization chamber temperature control disk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106637142A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343012A (en) * | 1992-10-06 | 1994-08-30 | Hardy Walter N | Differentially pumped temperature controller for low pressure thin film fabrication process |
| CN104911544A (en) * | 2015-06-25 | 2015-09-16 | 沈阳拓荆科技有限公司 | Temperature control disc |
| CN104928651A (en) * | 2015-04-27 | 2015-09-23 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc for output gas of warm flow chamber |
| CN104988472A (en) * | 2015-06-25 | 2015-10-21 | 沈阳拓荆科技有限公司 | Temperature control system of semiconductor coating device |
-
2015
- 2015-10-29 CN CN201510718211.3A patent/CN106637142A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343012A (en) * | 1992-10-06 | 1994-08-30 | Hardy Walter N | Differentially pumped temperature controller for low pressure thin film fabrication process |
| CN104928651A (en) * | 2015-04-27 | 2015-09-23 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc for output gas of warm flow chamber |
| CN104911544A (en) * | 2015-06-25 | 2015-09-16 | 沈阳拓荆科技有限公司 | Temperature control disc |
| CN104988472A (en) * | 2015-06-25 | 2015-10-21 | 沈阳拓荆科技有限公司 | Temperature control system of semiconductor coating device |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170510 |
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| RJ01 | Rejection of invention patent application after publication |