CN106609354A - Temperature controllable base table of semiconductor coating equipment - Google Patents
Temperature controllable base table of semiconductor coating equipment Download PDFInfo
- Publication number
- CN106609354A CN106609354A CN201510690225.9A CN201510690225A CN106609354A CN 106609354 A CN106609354 A CN 106609354A CN 201510690225 A CN201510690225 A CN 201510690225A CN 106609354 A CN106609354 A CN 106609354A
- Authority
- CN
- China
- Prior art keywords
- medium
- temperature
- disk body
- base station
- base table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a temperature controllable base table of semiconductor coating equipment and belongs to the technical fields of semiconductor film deposition application and manufacturing. The temperature controllable base table internally comprises a base table medium heat value exchange cavity so that the temperature of the base table can be controlled rapidly, accurately and evenly. The problems that the heat exchange efficiency and capacity of existing semiconductor coating equipment are low and the wafer temperature is not uniform enough and according a film fails due to the fact that the temperature of the base table is increased too fast and decreased slowly in the technique process are solved. The base table comprises an upper plate body and a lower plate body. A sealing cavity is formed between the upper plate body and the lower plate body. A medium can be introduced into the sealing cavity for temperature adjustment. A medium inlet and a medium outlet are formed in the base table to be connected into the sealing cavity and used for circulation of the medium. Through the structure of the system, the temperature of the base table can be automatically adjusted so that the temperature of a heating plate can be ensured. Through automatic temperature control of the circulation medium, automatic adjusting of the temperature of the heating plate can be achieved, and the temperature of the base table can be controlled accurately.
Description
Technical field
The present invention relates to a kind of semiconductor coated film equipment controllable temperature base station, its inside is changed comprising base station medium caloric value
Cavity, to realize to the quick, accurate of base station temperature, equal control.Belong to semiconductive thin film deposition applications
And manufacturing technology field.
Background technology
Semiconductor equipment generally requires to make wafer and chamber be heated or maintained at deposition instead when deposition reaction is carried out
Required temperature is answered, so heating dish must possess heating arrangement to meet to the purpose of wafer preheating.Greatly
Most semiconductor thin film deposition equipments, also have plasma in deposition process and participate in deposition reaction, because etc.
The energy release reacted between the release of gas ions energy and chemical gas, the temperature of heating dish and wafer can be with
The increase temperature for radio frequency and process time constantly can rise, if the technique in the case where identical temperature is carried out,
Need to wait heating dish just carry out after dropping to identical temperature, can so take a substantial amount of time, equipment
Production capacity compares relatively low.Too fast, the temperature meeting of wafer and heating dish if the temperature of wafer and heating dish heats up
Beyond the temperature is subjected to by thin film, thin film is caused to fail.
The content of the invention
The technical problem to be solved is to provide a kind of semiconductor coated film equipment controllable temperature base station, solution
Certainly in technical process, the too fast cooling of base station temperature rise is slow, causes existing semiconductor coated film equipment heat exchanger effectiveness and product
Can be relatively low, wafer temperature not enough uniformly causes the problem of thin film failure.Need and can automatically adjust base station temperature
The system of degree, ensures the temperature of heating dish.By the temperature automatically controlled of circulation vector, it is possible to achieve heating dish
Automatically adjusting for temperature, can be accurately controlled the temperature of base station.
The present invention is achieved in that a kind of semiconductor coated film equipment controllable temperature base station, and the base station includes disk
Body and lower disk body, form annular seal space between upper disk body and lower disk body, the sealing intracavity can be passed through medium and carry out
Temperature adjustment, opens up media input on base station and is passed through sealing intracavity with media outlet, for the circulation of medium.
Further, the lower surface edge of the upper disk body arranges edge lug boss to the present invention.
The present invention further, is fixed by ceramics pole between upper disk body and lower disk body.
Further, the ceramics pole is evenly distributed on disk body or lower disk body near edge to the present invention.
Further, the center of disk body arranges central boss to the present invention on described, in central boss
Medium import and media outlet are opened up, medium inlet pipe and medium are set in lower wall body phase base station support column even
Outlet pipe, the medium import are connected with medium outlet pipe respectively at medium inlet pipe with media outlet.
The present invention further, arranges connection boss for by upper disk body and lower wall in the surrounding of the ceramics pole
Seal after body welding.
The present invention further, is passed through thermocouple and is passed at the central boss of annular seal space in support column.
Further, the base station also includes temperature control system to the present invention, the temperature control system include controller with
Mechanical pump, the input of the controller connect the outfan of thermocouple, the outfan and mechanical pump of controller
Control end connection, the delivery outlet of mechanical pump is connected with medium inlet pipe with medium outlet pipe respectively with input port.
Further, the core of the controller is single-chip microcomputer to the present invention.
Compared with prior art, beneficial effect is the present invention：
1st, the present invention passes through to control medium in the sealing cavity circulation that upper disk body and lower wall body are formed using medium
Temperature is cooled down to medium and is heated, so as to realize precise control so as to reach the temperature of control base station
Purpose.
2nd, welded by boss is arranged on upper disk body, during assembling, mode is simple, and is not easy leak.
The 3rd, medium import and media outlet be set in central boss rather than directly arranged on lower disk body, from
And enable mediation cycle directly to get to excessively disk body and realize that the fast temperature to upper disk body is controlled.
4th, the accurate survey that disk body realizes the disk body temperature on is directly passed into by central boss in thermocouple
Amount.
5th, the accurate survey that disk body realizes the disk body temperature on is directly passed into by central boss in thermocouple
Amount.
6th, ceramics pole surrounding arrange connection boss, by the welding to boss, realize outside base station with it is close
The sealing in envelope chamber is arranged.
7th, the system that present configuration can automatically adjust base station temperature, ensures the temperature of heating dish.Pass through
Circulation vector it is temperature automatically controlled, it is possible to achieve automatically adjusting for heating dish temperature, base station can be accurately controlled
Temperature.
Description of the drawings
Fig. 1 is Structure explosion diagram provided in an embodiment of the present invention；
Fig. 2 is upper body structure schematic diagram provided in an embodiment of the present invention；
Fig. 3 is lower disk body structural representation provided in an embodiment of the present invention；
Fig. 4 is temperature control system block diagram provided in an embodiment of the present invention；
Shown in figure：
1st, upper disk body；2nd, ceramics pole；3rd, lower disk body；4th, ceramics pole installs nut；5th, screwed hole；6、
Ceramic post holes；7th, upper disk surface medium import；8th, thermocouple hole；9th, upper disk surface media outlet；10th, under
Card media outlet；11st, lower card medium import；12nd, the installation of TC screwed hole；13rd, edge lug boss；
14th, central boss；15th, controller；16th, mechanical pump；17th, thermocouple.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, with reference to embodiments,
The present invention will be described in further detail.It should be appreciated that specific embodiment described herein only to
The present invention is explained, is not intended to limit the present invention.
Fig. 2 and Fig. 3 is combined referring to Fig. 1, a kind of semiconductor coated film equipment controllable temperature base station, the base station include
Upper disk body 1 and lower disk body 3, form annular seal space between upper disk body 1 and lower disk body 3, sealing intracavity can be passed through
Medium carries out temperature adjustment, and medium can adopt water, open up media input and be passed through with media outlet on base station
Sealing intracavity, for the circulation of medium.
As shown in figure 1, the lower surface edge of upper disk body 1 arranges edge lug boss 13, in order to lower wall
Body 3 is welded.Edge lug boss 13 with certain altitude is set, and the height of edge lug boss 13 can be according to
The requirement of equipment is adjusted, and forms the annular seal space with one fixed width after welding, by sealing intracavity
Medium such as water is passed through, and especially enters the control of trip temperature by the temperature for controlling medium to base station to upper disk body
System.
Referring to Fig. 1, fixed by ceramics pole 2 between upper disk body 1 and lower disk body 3, uniform point of ceramics pole 2
Cloth is in upper disk body 1 or lower disk body 3 near edge.In the position of upper disk body correspondence ceramics pole, ceramics pole is set
Hole 6, equally in 3 card of lower disk body, is provided with screwed hole 5 with 6 corresponding position of ceramic post holes, by pottery
Porcelain is installed nut 4 and is fixed, between connect by ceramics pole 2, also have around the position of ceramic post holes 6 together
The connection boss of sample height is used for sealing when welding.
Referring to Fig. 2, mutually level central boss 14 is set in the center of upper disk body 1, for plus
Under hot plate, disk body 3 is sealed, and contacts with upper disk body 1 and be provided with 14 structure of central boss in centre position
Upper disk surface medium import 7, upper disk surface media outlet 9, is gone out by upper disk surface medium import 7, upper disk surface medium
Mouth 9 is directly contacted with upper disk body so that medium quickly can enter the control of trip temperature to upper disk body 1.
Referring to Fig. 3, in lower 3 card of disk body, with upper disk surface medium import 7, upper disk surface medium in upper disk surface 1
Export 9 corresponding positions and be provided with lower card medium import 11, lower card media outlet 10, by lower card
Medium is passed through into upper disk after medium import 11, lower card media outlet 10 connection medium inlet pipe and medium outlet pipe
Face medium import 7, upper disk surface media outlet 9 is circulated with sealing intracavity medium, medium inlet pipe and medium
Outlet pipe is arranged on the support column being connected with lower disk body.
Referring to Fig. 2 and Fig. 3, thermocouple hole 8, the installation of TC spiral shell 12 are set in lower 3 card of disk body,
It is passed through thermocouple to be passed at the central boss 14 of annular seal space in dagger, realizes the direct temperature measurement to upper matrix 1.
Referring to Fig. 4, the base station also includes temperature control system, and temperature control system includes controller 15 and mechanical pump,
The core of controller 15 is single-chip microcomputer, and the input of controller 15 connects the outfan of thermocouple 17, control
The outfan of device 17 is connected with the control end of mechanical pump 16, the delivery outlet of mechanical pump 16 and input port respectively with
Medium inlet pipe is connected with medium outlet pipe.The temperature parameter fed back by thermocouple 17, by controller control machine
Tool pump adjusts circulation rate or medium temp enters the control of trip temperature.
During processing, upper disk body 1 is welded by way of vacuum brazing with lower disk body 3, then will pottery
Porcelain knob 2, in ceramic post holes 6, installs nut 4 by ceramics pole and ceramics pole 2 is fixed,
Complete the processing of total.
Presently preferred embodiments of the present invention is the foregoing is only, it is not to limit the present invention, all at this
Any modification, equivalent and improvement for being made within bright spirit and principle etc., should be included in the present invention
Protection domain within.
Claims (9)
1. a kind of semiconductor coated film equipment controllable temperature base station, it is characterised in that the base station includes disk body with
Disk body, forms annular seal space between upper disk body and lower disk body, the sealing intracavity can be passed through medium and enter trip temperature tune
Section, opens up media input on base station and is passed through sealing intracavity with media outlet, for the circulation of medium.
2. according to the semiconductor coated film equipment controllable temperature base station described in claim 1, it is characterised in that described
The lower surface edge of upper disk body arranges edge lug boss.
3. according to the semiconductor coated film equipment controllable temperature base station described in claim 1, it is characterised in that upper disk
Fixed by ceramics pole between body and lower disk body.
4. according to the semiconductor coated film equipment controllable temperature base station described in claim 3, it is characterised in that described
Ceramics pole is evenly distributed on disk body or lower disk body near edge.
5. according to the semiconductor coated film equipment controllable temperature base station described in claim 1, it is characterised in that in institute
The center for stating disk body arranges central boss, and medium import and media outlet are opened up in central boss,
In lower wall body phase base station support column even, medium inlet pipe and medium outlet pipe, the medium import and medium are set
Outlet is connected with medium outlet pipe respectively at medium inlet pipe.
6. according to the semiconductor coated film equipment controllable temperature base station described in claim 1, it is characterised in that in institute
The surrounding for stating ceramics pole arranges connection boss for sealing after upper disk body is welded with lower disk body.
7. according to the semiconductor coated film equipment controllable temperature base station described in claim 5, it is characterised in that support
It is passed through thermocouple to be passed at the central boss of annular seal space in post.
8. according to the semiconductor coated film equipment controllable temperature base station described in claim 7, it is characterised in that the base
Platform also includes temperature control system, and the temperature control system includes controller and mechanical pump, the input of the controller
The outfan of end connection thermocouple, the outfan of controller is connected with the control end of mechanical pump, mechanical pump it is defeated
Outlet is connected with medium inlet pipe with medium outlet pipe respectively with input port.
9. according to the semiconductor coated film equipment controllable temperature base station described in claim 8, it is characterised in that described
The core of controller is single-chip microcomputer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510690225.9A CN106609354A (en) | 2015-10-22 | 2015-10-22 | Temperature controllable base table of semiconductor coating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510690225.9A CN106609354A (en) | 2015-10-22 | 2015-10-22 | Temperature controllable base table of semiconductor coating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106609354A true CN106609354A (en) | 2017-05-03 |
Family
ID=58611463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510690225.9A Pending CN106609354A (en) | 2015-10-22 | 2015-10-22 | Temperature controllable base table of semiconductor coating equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106609354A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108866514A (en) * | 2018-07-01 | 2018-11-23 | 长沙新材料产业研究院有限公司 | A kind of improved MPCVD equipment Substrate table cooling structure |
| CN110379729A (en) * | 2018-04-13 | 2019-10-25 | 北京北方华创微电子装备有限公司 | Heating pedestal and semiconductor processing equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104789943A (en) * | 2015-04-01 | 2015-07-22 | 沈阳拓荆科技有限公司 | Temperature-controllable double-gas channel spraying plate with uniform gas spraying function |
| CN104835762A (en) * | 2015-04-27 | 2015-08-12 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc with paper-cut-shaped surface structure |
| CN104878370A (en) * | 2015-05-29 | 2015-09-02 | 沈阳拓荆科技有限公司 | Split type temperature-controllable heating disc structure |
| CN104911544A (en) * | 2015-06-25 | 2015-09-16 | 沈阳拓荆科技有限公司 | Temperature control disc |
| CN104988472A (en) * | 2015-06-25 | 2015-10-21 | 沈阳拓荆科技有限公司 | Temperature control system of semiconductor coating device |
-
2015
- 2015-10-22 CN CN201510690225.9A patent/CN106609354A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104789943A (en) * | 2015-04-01 | 2015-07-22 | 沈阳拓荆科技有限公司 | Temperature-controllable double-gas channel spraying plate with uniform gas spraying function |
| CN104835762A (en) * | 2015-04-27 | 2015-08-12 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc with paper-cut-shaped surface structure |
| CN104878370A (en) * | 2015-05-29 | 2015-09-02 | 沈阳拓荆科技有限公司 | Split type temperature-controllable heating disc structure |
| CN104911544A (en) * | 2015-06-25 | 2015-09-16 | 沈阳拓荆科技有限公司 | Temperature control disc |
| CN104988472A (en) * | 2015-06-25 | 2015-10-21 | 沈阳拓荆科技有限公司 | Temperature control system of semiconductor coating device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379729A (en) * | 2018-04-13 | 2019-10-25 | 北京北方华创微电子装备有限公司 | Heating pedestal and semiconductor processing equipment |
| CN108866514A (en) * | 2018-07-01 | 2018-11-23 | 长沙新材料产业研究院有限公司 | A kind of improved MPCVD equipment Substrate table cooling structure |
| CN108866514B (en) * | 2018-07-01 | 2023-12-12 | 航天科工(长沙)新材料研究院有限公司 | Improved cooling structure of MPCVD equipment substrate table |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104911544B (en) | Temperature control disk | |
| CN102102194B (en) | Temperature controlled showerhead for high temperature operations | |
| CN104988472B (en) | Semiconductor coated film equipment temperature-controlling system | |
| US6176198B1 (en) | Apparatus and method for depositing low K dielectric materials | |
| TWI658529B (en) | Local temperature control of susceptor heater for increase of temperature uniformity | |
| TW201944529A (en) | Ceramic wafer heater with integrated pressurized helium cooling | |
| CN103974518A (en) | Temperature controlled window of a plasma processing chamber component | |
| CN103526186B (en) | A kind of chip carrying disk for MOCVD reactor and MOCVD reactor | |
| WO2014116392A1 (en) | Electrostatic chuck with concentric cooling base | |
| CN104878370A (en) | Split type temperature-controllable heating disc structure | |
| CN106609354A (en) | Temperature controllable base table of semiconductor coating equipment | |
| CN104752136A (en) | Plasma processing device and electrostatic chuck thereof | |
| CN102534551B (en) | Semiconductor equipment | |
| CN106611733B (en) | Many imports cavity heating support frame | |
| CN207313684U (en) | Vacuum coating equipment | |
| CN106653646A (en) | Hot and cold chamber temperature controllable heating support rack | |
| CN104835761A (en) | Temperature-controllable heating disc enabling peripheral outgassing | |
| CN109423631B (en) | Vapor deposition uniform heating device and vapor deposition furnace | |
| CN111383885B (en) | Substrate mounting table capable of improving temperature control precision and plasma processing equipment | |
| CN107462019B (en) | One-room double-temperature vacuum drying oven and drying method | |
| CN106637139A (en) | Flow stabilization chamber cavity temperature controllable matrix carrier structure | |
| CN106544650A (en) | The split type temperature control disk of pedestal | |
| CN110404743A (en) | A kind of efficient circulation heating system of online vertical curing oven | |
| TWI817617B (en) | Variable thermal conductivity temperature control components, methods, systems and plasma processing devices | |
| CN116026485B (en) | Testing device of ceramic heating disc for semiconductor equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170503 |