CN116026485B - Testing device of ceramic heating disc for semiconductor equipment - Google Patents
Testing device of ceramic heating disc for semiconductor equipment Download PDFInfo
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- CN116026485B CN116026485B CN202310330758.0A CN202310330758A CN116026485B CN 116026485 B CN116026485 B CN 116026485B CN 202310330758 A CN202310330758 A CN 202310330758A CN 116026485 B CN116026485 B CN 116026485B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 122
- 238000010438 heat treatment Methods 0.000 title claims abstract description 90
- 238000012360 testing method Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 84
- 238000007789 sealing Methods 0.000 claims abstract description 69
- 239000012495 reaction gas Substances 0.000 claims abstract description 67
- 238000001816 cooling Methods 0.000 claims abstract description 59
- 238000001514 detection method Methods 0.000 claims abstract description 14
- 238000000605 extraction Methods 0.000 claims description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 239000007921 spray Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 24
- 238000005507 spraying Methods 0.000 claims description 10
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 5
- 238000013021 overheating Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000002265 prevention Effects 0.000 abstract description 2
- 238000004088 simulation Methods 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000005086 pumping Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention discloses a testing device of a ceramic heating plate for semiconductor equipment, which comprises a ceramic heating plate, wherein a ceramic tube is arranged at the bottom of the ceramic heating plate, and the testing device comprises a control cabinet, an upper computer, a reaction container, a vacuum device, a reaction gas conveying device, a handle cooling device and a temperature detecting device, wherein the vacuum device, the reaction gas conveying device, the handle cooling device and the temperature detecting device are respectively connected with the reaction container; the ceramic heating plate is positioned in the reaction container, the handle cooling device is fixedly positioned at the bottom of the reaction container, the ceramic pipe penetrates through the bottom of the reaction container, the ceramic pipe is positioned in the handle cooling device, and the temperature detection device is positioned at the top of the ceramic heating plate; the upper computer is electrically connected with the control cabinet, and the control cabinet is respectively electrically connected with the ceramic heating plate, the vacuum device, the reaction gas conveying device, the handle cooling device and the temperature detecting device. The invention has the advantages of low cost, multipoint temperature detection, good cooling effect, good sealing effect, ceramic tube overheating prevention and realization of the CVD process in the simulation chip manufacturing process.
Description
Technical Field
The invention relates to the field of ceramic heating plate testing of semiconductor equipment, in particular to a testing device of a ceramic heating plate for semiconductor equipment.
Background
The chemical vapor deposition method for preparing the film is that the reaction gas injected into the process cavity is adsorbed on the surface of the semiconductor wafer and then subjected to chemical reaction, so that the generated solid product is deposited on the surface of the semiconductor wafer. At this time, activation energy is provided for promoting chemical reaction of the reaction gas, and thermal energy or plasma is used as a source of activation energy.
Currently, the patent with publication number "KR1020010094052a" discloses a heater for a chemical vapor deposition apparatus for the purpose of: a heater for a chemical vapor deposition apparatus is provided, which combines a moving device and a heating device by changing an alignment structure of the heating device. It indicates the chemical vapor deposition apparatus constitution: in order to heat the semiconductor wafer, the heating plate has a heating portion such as a heating coil. The heating part of the heating plate is connected with an external power supply and a heat controller. The heating plate is supported by the support portion. In order to prevent overheating of the support portion due to the heating plate, a cooling portion is provided around the support portion.
Chinese patent application publication No. CN114150295a discloses a ceramic heating plate, a heating plate body, and a pre-pressed multi-layer heating plate body layer is formed into the heating plate body after hot pressing; the radio frequency electrode is arranged in the second disc body layer; the heating component is arranged in the third tray body layer; the ceramic tube is connected with the heating disc body; the number of the extraction electrodes is multiple, and the extraction electrodes penetrate through the ceramic tube and are respectively connected with the radio-frequency electrode and the heating part; the ceramic heating plate is formed by performing prepressing forming on ceramic raw material powder, the radio frequency electrode and the heating component for a plurality of times and performing one-time hot press forming on the fired ceramic tube.
The inside of the chemical vapor deposition device needs to be sealed when the chemical vapor deposition device is used, and the vacuum degree of the chemical vapor deposition device is kept, so that the joint of the ceramic tube and equipment needs to be sealed, a special high-temperature-resistant sealing ring is generally used, the common temperature resistance of the sealing ring is 327 ℃, but the heating temperature of the ceramic heating disc is 400-600 ℃, so that the ceramic tube needs to be cooled when the heating disc body works, the ceramic tube is prevented from being overheated, the sealing ring is deformed in a melting way, and the vacuum degree of the chemical vapor deposition device is insufficient.
After the ceramic heating plate is manufactured, the ceramic heating plate needs to be tested, however, at present, no equipment for effectively testing the ceramic heating plate exists, and the ceramic heating plate is tested by using semiconductor equipment.
Disclosure of Invention
The invention aims to provide a testing device of a ceramic heating plate for semiconductor equipment, which has the advantages of low cost, multi-point temperature detection, good cooling effect, good sealing effect, uniform reaction gas spraying, ceramic tube overheating prevention and realization of a CVD process in the simulation chip manufacturing process.
The technical aim of the invention is realized by the following technical scheme:
the testing device comprises a ceramic heating disc, a control cabinet, an upper computer, a reaction container, a vacuum device, a reaction gas conveying device, a handle cooling device and a temperature detecting device, wherein the ceramic tube is arranged at the bottom of the ceramic heating disc;
the ceramic heating plate is positioned in the reaction container, the handle cooling device is fixedly positioned at the bottom of the reaction container, the ceramic pipe penetrates through the bottom of the reaction container, the ceramic pipe is positioned in the handle cooling device, and the temperature detection device is positioned at the top of the ceramic heating plate;
the upper computer is electrically connected with the control cabinet, the control cabinet is electrically connected with the ceramic heating plate, the vacuum device, the reaction gas conveying device, the handle cooling device and the temperature detecting device respectively, the upper computer sends instructions to the control cabinet to control the ceramic heating plate, the vacuum device, the reaction gas conveying device, the handle cooling device and the temperature detecting device, the control cabinet sequentially controls the vacuum device to vacuum the reaction container, the handle cooling device to cool the ceramic pipe, the ceramic heating plate to heat the ceramic heating plate, the reaction gas conveying device to convey the reaction gas to the inside of the reaction container, and the temperature detecting device to carry out multipoint temperature measurement on the ceramic heating plate.
The preferred scheme is as follows:
preferably: the reaction container is barrel-shaped, an end cover is arranged at the top of the reaction container, a circular perforation is formed in the bottom wall of the interior of the reaction container, and the ceramic tube is inserted into the circular perforation;
the handle cooling device comprises a water heat exchanger, a mounting cylinder, a heat conducting ring, a cooling ring and a sealing ring, wherein a first flange plate is fixedly arranged at the top of the mounting cylinder and at the position of the upward quarter of the bottom of the mounting cylinder, the top of the first flange plate is fixedly connected with the bottom of a reaction vessel, the heat conducting ring is inserted into the mounting cylinder in a clearance fit manner, the top and the bottom of the cooling ring are fixedly provided with second flange plates, the top of the cooling ring is connected with the first flange plate at the position of the upward quarter of the bottom of the mounting cylinder through the second flange plate at the top, the bottom of the cooling ring is connected with the sealing ring through the second flange plate at the bottom, the inner diameter of the cooling ring is 1.1 times the outer diameter of the mounting cylinder, a first water inlet and a first water outlet are formed in the heat conducting ring, the water inlet of the water heat exchanger is communicated with the first water outlet, and the first water inlet is communicated with the water outlet of the water heat exchanger.
By adopting the technical scheme: when the ceramic heating plate starts to work, cold water is injected into a gap between the cooling ring and the mounting cylinder by the water heat exchanger, heat of the ceramic tube is transferred to the mounting cylinder by the heat conducting ring, the cold water circulates, heat is taken away, and the lower end of the ceramic tube is cooled.
Preferably: the diameter of the circular perforation is consistent with the inner diameter of the mounting cylinder, a sealing gasket is arranged at the bottom of the ceramic tube in a flange connection mode, and the bottom of the sealing gasket is in flange connection with the sealing ring.
By adopting the technical scheme: the provision of a gasket increases the degree of sealing between the interior of the reaction vessel and the interior of the mounting cylinder.
Preferably: the bottom of the reaction container is fixedly provided with a supporting frame, and a sealing block is arranged between the reaction container and the end cover.
By adopting the technical scheme: the support frame can play the effect of supporting reaction vessel, through the effect of sealing block, can play the effect that makes more sealed between end cover and the reaction vessel.
Preferably: the side wall of the reaction vessel is provided with an air inlet, a first vacuum extraction port and a second vacuum extraction port, the vacuum device comprises first-stage vacuum extraction equipment and second-stage vacuum extraction equipment, the first-stage vacuum extraction equipment is communicated with the first vacuum extraction port, the second-stage vacuum extraction equipment is communicated with the second vacuum extraction port, the outlet end of the first-stage vacuum extraction equipment is communicated with a reaction gas treatment device, a first electromagnetic valve is arranged at the air inlet, and the first electromagnetic valve is electrically connected with a control cabinet.
By adopting the technical scheme: the reaction vessel is subjected to vacuum extraction through the first-stage vacuum extraction equipment and the second-stage vacuum extraction equipment, so that the vacuum degree in the reaction vessel is ensured, and the ceramic heating plate starts to work, reaches the set temperature and controls the temperature.
Preferably: the reaction gas conveying device comprises a gas storage tank, a gas inlet shower head and a second electromagnetic switch valve, wherein the gas storage tank is provided with a first pipeline and is communicated with the reaction gas inlet end, the gas inlet shower head is positioned at the bottom of the end cover and is communicated with the reaction gas inlet end, the second electromagnetic switch valve is connected in series on the first pipeline, a pressure sensor is arranged inside the reaction container, and the second electromagnetic switch valve and the pressure sensor are electrically connected with a control cabinet.
By adopting the technical scheme: the gas storage tank evenly conveys reaction gas to the reaction container through the air inlet shower head, at the moment, the second electromagnetic switch valve is opened, the pressure in the reaction container is gradually increased, when the pressure in the reaction container reaches the set pressure, the second electromagnetic valve is closed, and the gas storage tank stops conveying the reaction gas to the reaction container.
Preferably: the temperature detection device comprises a temperature detector and a wafer thermocouple temperature sensor, wherein the wafer thermocouple temperature sensor is electrically connected with the temperature detector, and the temperature detector is electrically connected with the control cabinet.
By adopting the technical scheme: and adopting a wafer thermocouple temperature sensor to measure the temperature of the ceramic heating disc.
Preferably: the bottom of the sealing gasket is embedded with a third O-shaped sealing ring, and the top of the sealing gasket is embedded with a fourth O-shaped sealing ring.
By adopting the technical scheme: the sealing effect can be improved by using the third O-shaped sealing ring and the fourth O-shaped sealing ring.
Preferably: the utility model provides a shower head that admits air includes shell, apron, toper air guide plate, air inlet ring, upper spray plate, bottom spray plate, the shell vertical section is protruding form, the inside cavity form that is of shell, shell top and bottom all are equipped with the opening, the upper end of shell is fixed in the inside of the reaction gas entrance point at end cover top, the apron is fixed to be located the shell top, the apron is linked together with first pipeline, the bottom sprays the fixed bottom opening part that is located the shell of plate, the bottom sprays the fixed annular supporting shoe that is equipped with in board top, the upper spray plate is fixed to be located the supporting shoe top, the air inlet ring is fixed to be located the upper spray plate top, the toper air guide plate is fixed to be located the air inlet ring top, the upper end of toper air guide plate is located the inside upper end of shell.
By adopting the technical scheme: the reaction gas enters into a first air inlet buffer cavity formed by the conical air guide plate and the shell through a first pipeline, then enters into a second air inlet buffer cavity formed by the conical air guide plate and the upper spraying plate through an air inlet ring, and then enters into a third air inlet buffer cavity formed by the upper spraying plate and the lower spraying plate through the upper spraying plate, and finally the reaction gas is uniformly sprayed out through the lower spraying plate.
Preferably: 500 evenly distributed first round holes of 0.5mm are formed in the upper-layer spraying plate, 1000 evenly distributed second round holes of 0.5mm are formed in the bottom-layer spraying plate, and 180 third round holes of 0.5mm are formed in the circumferential array of the side wall of the air inlet ring.
By adopting the technical scheme: the reaction gas can uniformly enter the second air inlet buffer cavity and the third air inlet buffer cavity and finally uniformly distributed in the reaction container through the second round holes.
In summary, the invention has the following beneficial effects:
1. the control command can be sent out by the upper computer through the arrangement of the upper computer and the control cabinet, the control cabinet realizes the control command respectively, and the effect is finally reflected on the upper computer;
2. the handle cooling device is arranged, so that the effect of simulating the ceramic tube of the ceramic heating disc to cool when the chemical vapor deposition device works can be achieved;
3. through temperature detection device's setting, can play and carry out multipoint mode measurement to ceramic heating dish, detect the effect of ceramic heating dish surface temperature and temperature homogeneity.
Drawings
FIG. 1 is a cross-sectional view of a ceramic heating plate of an embodiment;
FIG. 2 is a schematic diagram of a connection structure of a test device according to an embodiment;
FIG. 3 is a schematic view showing the overall structural configuration of the reaction vessel of the embodiment;
FIG. 4 is a cross-sectional view schematically showing the overall structure of the reaction vessel of the embodiment;
FIG. 5 is an enlarged view of A in FIG. 4;
fig. 6 is a cross-sectional view of an air intake shower head of an embodiment.
In the figure, 1, a ceramic heating plate; 3. a control cabinet; 4. an upper computer; 5. a reaction vessel; 6. a vacuum device; 7. a reactant gas delivery apparatus; 8. a handle cooling device; 9. a temperature detecting device; 10. a reaction gas treatment device; 111. a ceramic tube; 112. a reinforcing block; 113. a flange connecting block; 511. an end cap; 512. a support frame; 513. a sealing block; 514. a hasp; 611. a first stage vacuum extraction apparatus; 612. a second stage vacuum extraction device; 613. a first electromagnetic valve; 711. a gas storage tank; 712. an air inlet shower head; 713. a second electromagnetic switching valve; 714. a first pipe; 715. a pressure sensor; 716. a housing; 717. a cover plate; 718. a conical air guide plate; 719. an air inlet ring; 720. an upper spray plate; 721. a bottom spray plate; 722. a support block; 811. a water heat exchanger; 812. a mounting cylinder; 813. a heat conducting ring; 814. a cooling ring; 815. a seal ring; 816. a first flange; 817. a second flange; 818. a sealing gasket; 819. a semicircular protrusion; 822. a first O-ring seal; 823. a second O-ring seal; 824. a third O-ring seal; 825. a fourth O-ring seal; 911. a temperature detector; 912. a wafer thermocouple temperature sensor.
Description of the embodiments
The present invention will be described in further detail with reference to the accompanying drawings.
Wherein like parts are designated by like reference numerals. It should be noted that the words "top" and "bottom" used in the following description refer to directions in the drawings.
The device for testing the ceramic heating plate for the semiconductor equipment is based on the ceramic heating plate 1, as shown in fig. 1, a ceramic tube 111 is fixedly arranged at the bottom of the ceramic heating plate 1, a reinforcing block 112 is arranged at the joint of the ceramic heating plate 1 and the ceramic tube 111, and a flange connection block 113 is arranged at the bottom of the ceramic tube 111.
As shown in fig. 2 to 5, the testing device comprises a control cabinet 3, an upper computer 4, a reaction container 5, a vacuum device 6, a reaction gas conveying device 7, a handle cooling device 8 and a temperature detecting device 9 which are respectively connected with the reaction container 5.
The reaction vessel 5 is in a barrel shape, a circular through hole is formed in the bottom wall of the inside of the reaction vessel 5, the ceramic heating disc 1 is positioned in the reaction vessel 5, the handle cooling device 8 is fixedly positioned at the bottom of the reaction vessel 5, the ceramic tube 111 is inserted in the circular through hole, the ceramic tube 111 penetrates through the bottom of the reaction vessel 5 to be positioned in the handle cooling device 8, and the temperature detection device 9 is positioned at the top of the ceramic heating disc 1.
The upper computer 4 is electrically connected with the control cabinet 3, the control cabinet 3 is electrically connected with the ceramic heating plate 1, the vacuum device 6, the reaction gas conveying device 7, the handle cooling device 8 and the temperature detecting device 9 respectively, the upper computer 4 sends out instructions to the control cabinet 3 to control the ceramic heating plate 1, the vacuum device 6, the reaction gas conveying device 7, the handle cooling device 8 and the temperature detecting device 9, the control cabinet 3 respectively and sequentially controls the vacuum device 6 to vacuum the reaction vessel 5, the handle cooling device 8 to cool the ceramic tube 111, the ceramic heating plate 1 is heated, the reaction gas conveying device 7 conveys reaction gas into the reaction vessel 5, and the temperature detecting device 9 carries out multi-point temperature measurement on the ceramic heating plate 1.
The handle cooling device 8 comprises a water heat exchanger 811, a mounting cylinder 812, a heat conducting ring 813, a cooling ring 814 and a sealing ring 815, wherein a first flange 816 is fixedly arranged at the top of the mounting cylinder 812 and one-fourth of the bottom of the mounting cylinder 812 upwards, the top of the first flange 816 is fixedly connected with the bottom of the reaction vessel 5 through welding, the diameter of a circular perforation of the reaction vessel 5 is consistent with the inner diameter of the mounting cylinder 812, and the circular perforation of the first flange 816, the mounting cylinder 812 and the reaction vessel 5 are concentric;
the top and the bottom of the cooling ring 814 are provided with second flange 817, the top of the cooling ring (814) is in flange connection with a first flange 816 at one quarter of the upward position of the bottom of the mounting cylinder 812 through the second flange 817 at the top, the bottom of the cooling ring 814 is in flange connection with a sealing ring 815 through the second flange 817 at the bottom, the bottom of the second flange 817 at the bottom of the cooling ring 814 is flush with the bottom of the mounting cylinder 812, the inner diameter of the cooling ring 814 is 1.1 times of the outer diameter of the mounting cylinder 812, therefore, a gap is reserved between the cooling ring 814 and the mounting cylinder 812, a first water inlet and a first water outlet are reserved on the heat conducting ring 813, the water inlet of the water heat exchanger 811 is communicated with the first water outlet, and the first water inlet is communicated with the water outlet of the water heat exchanger 811;
the heat conducting ring 813 is inserted in the mounting cylinder 812 in a clearance fit way, the height of the heat conducting ring 813 is one fourth of the height of the ceramic tube 111, the bottom of the heat conducting ring 813 is flush with the bottom of the mounting cylinder 812, as the bottom of the ceramic tube 111 is provided with the flange connecting block 113, the bottom of the heat conducting ring 813 is provided with a round groove for yielding, the heat conducting ring 813 is divided into a left side part and a right side part, the heat conducting ring 813 can be conveniently mounted on the outer side wall of the ceramic tube 111, the bottom of the ceramic tube 111 is flanged with a sealing pad 818, the sealing pad 818 is in a circular ring shape, the outer diameter of the sealing pad 818 is consistent with the inner diameter of the round groove for yielding, the inner diameter of the sealing pad 818 is consistent with the inner diameter of the ceramic tube 111, when the heat conducting ring 813 is installed, the sealing gasket 818 is connected to the bottom of the ceramic tube 111 in a flange mode, the left side part and the right side part of the heat conducting ring 813 are sleeved on the side wall of the ceramic tube 111, the bottom of the heat conducting ring 813 is flush with the bottom of the sealing gasket 818, the bottom of the sealing gasket 818 is connected with the sealing ring 815 in a flange mode, the third O-shaped sealing ring 824 is embedded in the bottom of the sealing gasket 818, the fourth O-shaped sealing ring 825 is embedded in the top of the sealing gasket 818, the third O-shaped sealing ring 824 and the fourth O-shaped sealing ring 825 are compressed, sealing effect is achieved, the heat conducting ring 813 can be cooled through the water heat exchanger 811, and the heat at the lower end of the ceramic tube 111 is transferred through the heat conducting ring 813, and the cooling effect is achieved;
and the extraction electrode of the ceramic tube 111 passes through the round hole corresponding to the inner diameter of the sealing ring 815 and is electrically connected with the control cabinet 3.
In order to better realize the sealing effect of the third O-ring 824 and the fourth O-ring 825, the diameter of the fourth O-ring 825 is 1.5 times that of the third O-ring 824, and the flange connection between the sealing pad 818 and the bottom of the ceramic tube 111 is located at the outer side of the fourth O-ring 825, and the flange connection between the sealing pad 818 and the sealing ring 815 is located at the inner side of the third O-ring 824.
A circle of semicircular grooves are formed in the side wall of the sealing gasket 818, a circle of semicircular protrusions 819 are formed in the side wall of the inner portion of the heat conducting ring 813, the heat conducting ring 813 can be conveniently limited, the heat conducting ring 813 is prevented from being displaced when the ceramic tube 111 is placed, a 5-10CM gap is reserved between the top wall of the inner portion of the heat conducting ring 813 and the top of the flange connection block 113 of the ceramic tube 111, and the heat conducting ring is used for conveniently connecting the sealing gasket 818 with the flange of the ceramic tube 111.
The side wall of the reaction vessel 5 is provided with an air inlet, a first vacuum extraction port and a second vacuum extraction port, the vacuum device 6 comprises a first-stage vacuum extraction device 611 and a second-stage vacuum extraction device 612, the first-stage vacuum extraction device 611 is communicated with the first vacuum extraction port, the second-stage vacuum extraction device 612 is communicated with the second vacuum extraction port, and the interior of the reaction vessel 5 is subjected to vacuum extraction through the first-stage vacuum extraction device 611 and the second-stage vacuum extraction device 612, so that the vacuum degree in the reaction vessel 5 is ensured.
The reaction gas inlet end has been seted up at end cover 511 top, reaction gas conveyor 7 is linked together with the reaction gas inlet end, reaction gas conveyor 7 includes gas holder 711, inlet shower head 712, second electromagnetic switch valve 713, gas holder 711 is equipped with first pipeline 714 and is linked together with the reaction gas inlet end, inlet shower head 712 is located the end cover 511 bottom, inlet shower head 712 is linked together with the reaction gas inlet end, second electromagnetic switch valve 713 is established ties on first pipeline 714, reaction vessel 5 is inside to be equipped with pressure sensor 715, second electromagnetic switch valve 713, pressure sensor 715 all with switch board 3 electric connection, when the vacuum in reaction vessel 5 inside reaches, ceramic heating dish 1 begins to work, reach the settlement temperature and carry out the accuse temperature, at this moment, second electromagnetic switch valve 713 is opened, the even reaction gas of carrying in reaction vessel 5 of gas holder 711 through inlet shower head 712, the pressure in the reaction vessel 5 increases gradually, when reaching the settlement pressure, second electromagnetic valve is closed, gas holder 711 stops carrying reaction gas to reaction vessel 5.
The outlet end of the first-stage vacuum pumping equipment 611 is communicated with the reaction gas treatment device 10, a first electromagnetic valve 613 is arranged at the air inlet, the first electromagnetic valve 613 is electrically connected with the control cabinet 3, when the test is completed, the reaction gas is required to be discharged, the reaction gas cannot be directly discharged into the air, the reaction gas is required to be treated by the reaction gas treatment device 10 and then is discharged, the first electromagnetic valve 613 is opened, the first-stage vacuum pumping equipment 611 works, and the reaction gas is pumped into the reaction gas treatment device 10 and then is discharged after being treated.
The reactive gas to be treated corresponds to the reactive gas treatment apparatus 10 of this reactive gas, wherein the reactive gas used in the present test is nitrogen, which is an inert reactive gas, and does not react, and also prevents the external reactive gas from entering the reaction vessel 5, and thus, the reactive gas treatment apparatus 10 is a nitrogen filter.
The temperature detection device 9 comprises a temperature detector 911 and sixty-four paths of wafer thermocouple temperature sensors 912, wherein the sixty-four paths of wafer thermocouple temperature sensors 912 are respectively attached to the top of the ceramic heating plate 1, and are used for carrying out multipoint measurement on the ceramic heating plate 1 to detect the temperature and the temperature uniformity effect of the surface of the ceramic heating plate 1.
The bottom of the reaction vessel 5 is provided with a supporting frame 512 which is used for enabling the bottom of the reaction vessel 5 to be away from the ground, the handle cooling device 8 is convenient to install, and a sealing block 513 is arranged between the reaction vessel 5 and the end cover 511, so that the sealing effect of the end cover 511 and the reaction vessel 5 is better, and the end cover 511 and the reaction vessel 5 are fixed through a hasp 514.
The bottom of the second flange 817 at the top of the cooling ring 814 and the bottom of the second flange 817 at the bottom are provided with first concave ring grooves, and each first concave ring groove is internally provided with a first O-shaped sealing ring 822; a second concave ring groove is provided at the bottom of the mounting cylinder 812, and a second O-ring 823 is provided in the second concave ring groove.
As shown in fig. 3, 4 and 6, the air inlet shower head 712 includes a housing 716, a cover plate 717, a conical air guide plate 718, an air inlet ring 719, an upper spray plate 720, a bottom spray plate 721, 180 third round holes of 0.5mm are formed in the circumferential array of the sidewall of the air inlet ring 719, 500 first round holes of 0.5mm are formed in the upper spray plate 720, and 1000 second round holes of 0.5mm are formed in the bottom spray plate 721;
the vertical section of the shell 716 is convex, the interior of the shell 716 is hollow, openings are formed in the top and the bottom of the shell 716, the upper end of the shell 716 is positioned in the reaction gas inlet end at the top of the end cover 511, the cover plate 717 is fixedly positioned at the top of the shell 716, and the cover plate 717 is communicated with the first pipeline 714;
the bottom spray plate 721 is fixedly positioned at the bottom opening of the shell 716, an annular supporting block 722 is fixedly arranged at the top of the bottom spray plate 721, the outer side wall of the supporting block 722 is propped against the inner side wall of the shell 716, the upper spray plate 720 is fixedly positioned at the top of the supporting block 722, the air inlet ring 719 is fixedly positioned at the top of the upper spray plate 720, a gap of 5cm is reserved between the outer side wall of the air inlet ring 719 and the inner side wall of the shell 716, the conical air guide plate 718 is fixedly positioned at the top of the air inlet ring 719, and the upper end of the conical air guide plate 718 is positioned at the upper end inside the shell 716.
The reaction gas enters the first air inlet buffer cavity formed by the conical air guide plate 718 and the shell 716 through the first pipeline 714, the top of the conical air guide plate 718 disperses the reaction gas, the reaction gas enters the second air inlet buffer cavity formed by the conical air guide plate 718 and the upper spray plate 720 through the third round hole of the air inlet ring 719, the reaction gas enters the third air inlet buffer cavity formed by the upper spray plate 720 and the lower spray plate 721 through the first round hole of the upper spray plate 720, and finally the reaction gas is uniformly sprayed out through the second round hole of the lower spray plate 721.
The specific implementation process comprises the following steps:
step one: the upper computer 4 is electrically connected with the control cabinet 3, and the control cabinet 3 is electrically connected with the vacuum device 6, the reaction gas conveying device 7 and the temperature detecting device 9 respectively;
the first-stage vacuum extraction equipment 611 of the vacuum device 6 is communicated with a first vacuum extraction port of the reaction vessel 5, the second-stage vacuum extraction equipment 612 is communicated with a second vacuum extraction port of the reaction vessel 5, and the air outlet of the first-stage vacuum extraction equipment 611 is communicated with the reaction gas treatment device 10;
the water inlet of the water heat exchanger 811 communicates with the first water outlet, and the first water inlet communicates with the water outlet of the water heat exchanger 811;
step two: the sealing gasket 818 is in flange connection with the flange connection block 113 at the bottom of the ceramic tube 111, at the moment, the fourth O-shaped sealing ring 825 at the top of the sealing gasket 818 is compressed, and the heat conducting ring 813 is arranged on the outer side wall of the ceramic tube 111;
step three: opening the end cap 511, putting the ceramic heating plate 1 provided with the heat conducting ring 813 into the reaction vessel 5, and inserting the ceramic tube 111 sleeved with the heat conducting ring 813 into the installation cylinder 812 through the circular perforation;
step four: a first O-ring 822 is installed in a first concave ring groove of a second flange 817 at the top of the cooling ring 814, and the cooling ring 814 is in flange connection with a first flange 816 at a quarter of the bottom of the mounting cylinder 812 upwards through the second flange 817 at the top;
step five: the first O-shaped sealing ring 822 is arranged in the first concave ring grooves of the second flange 817 at the bottom of the cooling ring 814, the second O-shaped sealing ring 823 is arranged in the second concave ring grooves at the bottom of the mounting cylinder 812, the sealing ring 815 is in flange connection with the second flange 817 at the bottom of the cooling ring 814, at the moment, the bottom of the heat conducting ring 813 is propped against the top of the sealing ring 815, and the bottom of the sealing pad 818 is propped against the top of the sealing ring 815;
step six: the seal ring 815 is flanged to the bottom of the gasket 818, where a third O-ring 824 at the bottom of the gasket 818 is compressed;
the ceramic heating plate 1 is electrically connected with the control cabinet 3 through an electrode;
step seven: sixty-four paths of wafer thermocouple temperature sensors 912 are respectively distributed and placed at the top of the ceramic heating disc 1, a sealing block 513 is placed at the top of the reaction vessel 5, an end cover 511 is covered, and sealing is carried out through a hasp 514;
step eight: the upper computer 4 sends out an instruction, the control cabinet 3 executes, first, the first-stage vacuum extraction equipment 611 and the second-stage vacuum extraction equipment 612 work, the interior of the reaction container 5 is subjected to vacuum extraction, the vacuum degree in the reaction container 5 is ensured, and when the required vacuum degree is reached, the first-stage vacuum extraction equipment 611 and the second-stage vacuum extraction equipment 612 stop working;
the water heat exchanger 811 of the shank cooling device 8 starts to operate, and cold water is circulated into the gap between the cooling ring 814 and the mounting cylinder 812;
the ceramic heating plate 1 starts to heat, reaches a set temperature and controls the temperature;
the second electromagnetic switch valve 713 is opened, the gas tank 711 uniformly conveys the reaction gas into the reaction vessel 5 through the gas inlet shower head 712, the pressure in the reaction vessel 5 gradually increases, and when the set pressure is reached, the second electromagnetic valve is closed, and the gas tank 711 stops conveying the reaction gas into the reaction vessel 5;
sixty-four way wafer thermocouple temperature sensors 912 begin to detect the surface temperature and temperature uniformity of ceramic hotplate 1, respectively, and transmit data to host computer 4;
step nine: after the test, the ceramic heating plate 1 stops heating, the first electromagnetic valve 613 is opened, the first stage vacuum pumping device 611 operates, and the reaction gas is pumped into the reaction gas treatment device 10 to be treated and then discharged.
In the present invention, the primary vacuum pumping device 611, the secondary vacuum pumping device 612 and the water heat exchanger 811 are all adopted in the prior art, the model, the manufacturer and the structure of the present invention are not limited, and all technologies capable of realizing the same function are within the protection scope of the present invention.
The present embodiment is only for explanation of the present invention and is not to be construed as limiting the present invention, and modifications to the present embodiment, which may not creatively contribute to the present invention as required by those skilled in the art after reading the present specification, are all protected by patent laws within the scope of claims of the present invention.
Claims (9)
1. The utility model provides a testing arrangement of ceramic heating dish for semiconductor device, includes ceramic heating dish (1), and the bottom of ceramic heating dish (1) is equipped with ceramic pipe (111), its characterized in that: the device also comprises a testing device, wherein the testing device comprises a control cabinet (3), an upper computer (4), a reaction container (5), a vacuum device (6), a reaction gas conveying device (7), a handle part cooling device (8) and a temperature detection device (9), which are respectively connected with the reaction container (5);
the ceramic heating plate (1) is positioned inside the reaction container (5), the handle cooling device (8) is fixedly positioned at the bottom of the reaction container (5), the ceramic tube (111) penetrates through the bottom of the reaction container (5), the ceramic tube (111) is positioned inside the handle cooling device (8), and the temperature detection device (9) is positioned at the top of the ceramic heating plate (1);
the upper computer (4) is electrically connected with the control cabinet (3), the control cabinet (3) is electrically connected with the ceramic heating disc (1), the vacuum device (6), the reaction gas conveying device (7), the handle cooling device (8) and the temperature detection device (9) respectively, the upper computer (4) sends out instructions to the control cabinet (3) to control the ceramic heating disc (1), the vacuum device (6), the reaction gas conveying device (7), the handle cooling device (8) and the temperature detection device (9), the control cabinet (3) sequentially controls the vacuum device (6) to perform vacuum extraction on the reaction container (5), the handle cooling device (8) to cool the ceramic tube (111), the ceramic heating disc (1) to heat, the reaction gas conveying device (7) to convey reaction gas to the inside of the reaction container (5), and the temperature detection device (9) to perform multipoint temperature measurement on the ceramic heating disc (1);
the reaction vessel (5) is in a barrel shape, an end cover (511) is arranged at the top of the reaction vessel (5), a circular perforation is formed in the bottom wall of the interior of the reaction vessel (5), and the ceramic tube (111) is inserted into the circular perforation;
the handle cooling device (8) comprises a water heat exchanger (811), a mounting cylinder (812), a heat conducting ring (813), a cooling ring (814) and a sealing ring (815), wherein the first flange (816) is fixedly arranged at the top of the mounting cylinder (812) and the upward quarter of the bottom of the mounting cylinder (812), the top of the first flange (816) is fixedly connected with the bottom of the reaction vessel (5), the heat conducting ring (813) is inserted into the mounting cylinder (812) in a clearance fit manner, the second flange (817) is fixedly arranged at the top and the bottom of the cooling ring (814) through the second flange (817) at the top of the cooling ring (814), the first flange (816) is connected with the flange of the upward quarter of the bottom of the mounting cylinder (812), the inner diameter of the cooling ring (814) is 1.1 times the outer diameter of the mounting cylinder (812), the first water inlet and the first water outlet are formed in the cooling ring (814), and the first water inlet are communicated with the first water outlet (811).
2. The test apparatus of a ceramic heating plate for semiconductor devices according to claim 1, wherein: the diameter of the circular through hole is consistent with the inner diameter of the mounting cylinder (812), a sealing gasket (818) is arranged at the bottom of the ceramic tube (111) in a flange connection mode, and the bottom of the sealing gasket (818) is in flange connection with the sealing ring (815).
3. The test apparatus of a ceramic heating plate for semiconductor devices according to claim 1, wherein: the bottom of the reaction vessel (5) is fixedly provided with a supporting frame (512), and a sealing block (513) is arranged between the reaction vessel (5) and the end cover (511).
4. The test apparatus of a ceramic heating plate for semiconductor devices according to claim 1, wherein: the side wall of the reaction container (5) is provided with an air inlet, a first vacuum extraction port and a second vacuum extraction port, the vacuum device (6) comprises first-stage vacuum extraction equipment (611) and second-stage vacuum extraction equipment (612), the first-stage vacuum extraction equipment (611) is communicated with the first vacuum extraction port, the second-stage vacuum extraction equipment (612) is communicated with the second vacuum extraction port, the outlet end of the first-stage vacuum extraction equipment (611) is communicated with the reaction gas treatment device (10), a first electromagnetic valve (613) is arranged at the air inlet, and the first electromagnetic valve (613) is electrically connected with the control cabinet (3).
5. The test apparatus of a ceramic heating plate for semiconductor devices according to claim 4, wherein: the reaction gas inlet end has been seted up at end cover (511) top, reaction gas conveyor (7) are linked together with reaction gas inlet end, reaction gas conveyor (7) are including gas holder (711), inlet shower head (712), second electromagnetic switch valve (713), gas holder (711) are equipped with first pipeline (714) and are linked together with reaction gas inlet end, inlet shower head (712) are located end cover (511) bottom, inlet shower head (712) are linked together with reaction gas inlet end, second electromagnetic switch valve (713) are established ties on first pipeline (714), reaction vessel (5) inside is equipped with pressure sensor (715), second electromagnetic switch valve (713), pressure sensor (715) all with switch board (3) electric connection.
6. The test apparatus of a ceramic heating plate for semiconductor devices according to claim 1, wherein: the temperature detection device (9) comprises a temperature detector (911) and a wafer thermocouple temperature sensor (912), wherein the wafer thermocouple temperature sensor (912) is electrically connected with the temperature detector (911), and the temperature detector (911) is electrically connected with the control cabinet (3).
7. The test apparatus of a ceramic heating plate for semiconductor devices according to claim 2, wherein: the bottom of the sealing gasket (818) is embedded with a third O-shaped sealing ring (824), and the top of the sealing gasket (818) is embedded with a fourth O-shaped sealing ring (825).
8. The test apparatus of a ceramic heating plate for semiconductor devices according to claim 5, wherein: the utility model provides a shower head (712) of admitting air includes shell (716), apron (717), toper air guide plate (718), inlet ring (719), upper spray plate (720), bottom spray plate (721), shell (716) vertical section is protruding form, shell (716) inside is the cavity form, shell (716) top and bottom all are equipped with the opening, the upper end of shell (716) is fixed inside the reaction gas inlet end at end cover (511) top, apron (717) is fixed and is located shell (716) top, apron (717) are linked together with first pipeline (714), bottom spray plate (721) is fixed and is located the bottom opening part of shell (716), bottom spray plate (721) top is fixed and is equipped with annular supporting shoe (722), upper spray plate (720) is fixed and is located supporting shoe (722) top, inlet ring (719) is fixed and is located upper spray plate (720) top, toper air guide plate (718) is fixed and is located inlet ring (719) top, toper air guide plate (718) is located inside of shell (718) top.
9. The test apparatus of a ceramic heating plate for semiconductor devices according to claim 8, wherein: 500 evenly distributed first round holes of 0.5mm are formed in the upper-layer spraying plate (720), 1000 evenly distributed second round holes of 0.5mm are formed in the bottom-layer spraying plate (721), and 180 third round holes of 0.5mm are formed in the circumferential array of the side wall of the air inlet ring (719).
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| CN202310330758.0A CN116026485B (en) | 2023-03-31 | 2023-03-31 | Testing device of ceramic heating disc for semiconductor equipment |
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| CN202310330758.0A CN116026485B (en) | 2023-03-31 | 2023-03-31 | Testing device of ceramic heating disc for semiconductor equipment |
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| CN103792974B (en) * | 2014-01-22 | 2015-12-02 | 清华大学 | A kind of can the heating plate of quick meticulous adjustment temperature field space distribution and control method |
| CN106404360A (en) * | 2015-08-03 | 2017-02-15 | 沈阳拓荆科技有限公司 | Corrugated-pipe actual service life detection tooling |
| US10957572B2 (en) * | 2018-05-02 | 2021-03-23 | Applied Materials, Inc. | Multi-zone gasket for substrate support assembly |
| CN108873983A (en) * | 2018-06-27 | 2018-11-23 | 沈阳拓荆科技有限公司 | The compound temperature-controlling system of semiconductor heating dish and temperature control method |
| CN110230043A (en) * | 2019-05-17 | 2019-09-13 | 苏州珂玛材料科技股份有限公司 | The preparation method of chemical vapor deposition device, ceramic heat disk and ceramic heat disk |
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