CN106637144A - Cavity temperature control disc with air exhaust holes - Google Patents
Cavity temperature control disc with air exhaust holes Download PDFInfo
- Publication number
- CN106637144A CN106637144A CN201510724579.0A CN201510724579A CN106637144A CN 106637144 A CN106637144 A CN 106637144A CN 201510724579 A CN201510724579 A CN 201510724579A CN 106637144 A CN106637144 A CN 106637144A
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- CN
- China
- Prior art keywords
- disk body
- temperature control
- upper disk
- stabilier
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention relates to a cavity temperature control disc with air exhaust holes and belongs to the technical field of deposition application and manufacture of semiconductor films. The cavity temperature control disc comprises an upper disc body, a lower disc body and a steady flow plate positioned between the upper disc body and the lower disc body, wherein the steady flow plate divides the temperature control disc into an upper cavity and a lower cavity; the upper cavity is a heat medium circulating cavity; the lower cavity is a steady flow cavity; a plurality of heat conduction air holes are formed in the upper disc body; each heat conduction air hole communicates with the interior of the steady flow cavity through a pipe fitting; the air exhaust holes are uniformly formed in the upper disc body and communicate with the interior of the steady flow cavity; and a heat conduction air inlet hole is formed in the lower disc body and communicates with the interior of the steady flow cavity. As the air exhaust holes are formed, residual air is exhausted by the air exhaust holes, and accordingly, not only is the temperature of wafers effectively controlled, but also the stability of the wafers is guaranteed.
Description
Technical field
The present invention relates to a kind of side is evacuated cellular type cavity temperature control disk, belong to semiconductive thin film deposition applications and manufacture
Technical field.
Background technology
Semiconductor equipment generally requires to make wafer and chamber be heated or maintained at deposition instead when deposition reaction is carried out
Required temperature is answered, so heating dish must possess heating arrangement to meet to the purpose of wafer preheating.It is many
Half semiconductor thin film deposition equipment, also have in deposition process plasma participate in deposition reaction, because wait from
The energy release reacted between the release of daughter energy and chemical gas, the temperature of heating dish and wafer can be with
The increase temperature of radio frequency and process time can constantly rise；If the technique in the case where identical temperature is carried out, need
Waiting heating dish to drop to after identical temperature just can be carried out, and so can be taken a substantial amount of time, the product of equipment
Can compare relatively low.If the temperature intensification of wafer and heating dish is too fast, the temperature of wafer and heating dish can surpass
Go out the temperature that film is subjected to, cause film to fail.
The too fast cooling of heating dish temperature rise is slow in order to solve the problems, such as technical process, it is desirable to have can automatically adjust
The system of heating dish temperature is ensureing the temperature of heating dish.In order to preferably control the temperature of wafer, need
The temperature of wafer is delivered in heating dish, by the temperature for controlling the temperature of heating dish to control crystal column surface.
But semiconductive thin film deposition reaction is mostly to carry out under vacuum, vacuum condition heat transfer mainly by radiation,
Heat conduction efficiency is low, and heat can be assembled in crystal column surface.In order to preferably by the heat transfer on wafer to plus
In hot plate, need to be passed through one layer of heat-conducting medium between heating dish and wafer, so as to quick between heating dish and wafer
Heat exchange is carried out, while can preferably improve the uniformity of wafer temperature, it is but, continuous in heat transfer gas
Be passed through during, gas can be full of between wafer.If gas flow is excessive, wafer can produce jitter phenomenon,
The content of the invention
The technical problem to be solved is to provide a kind of temperature for effectively enough controlling wafer, moreover it is possible to
Ensure the side pumping cellular type cavity temperature control disk of the stability of wafer.
The present invention is achieved in that a kind of side pumping cellular type cavity temperature control disk, including upper disk body, lower disk body
And hole Winchester disk is divided into upper and lower two chambers by the setting stabilier between upper disk body and lower disk body, wherein
Upper chamber is that heating agent circulates cavity, and lower chambers are plenum chamber, and multiple thermally conductive gas body openings are arranged on upper disk body,
Each thermally conductive gas body opening is passed through to current stabilization room by pipe fitting, aspirating hole is evenly arranged with upper disk body and is led to
Enter to current stabilization room, heat transfer gas air admission hole is set on lower disk body and is passed through to current stabilization room.
Further, outwards diverging will centered on the above disk body center of circle on upper disk body for the thermally conductive gas body opening
Upper disk body is uniformly divided into 4～8 pieces.
Further, in 4～8 block portions that upper disk body is divided into point, it is respectively provided with an aspirating hole.
Further, the upper surface that the edge of the lower surface of upper disk body has boss, lower disk body has boss,
Boss of the lower disk body again with upper disk body after the boss of its own and current stabilization plate weld is welded.
Further, stabilier aspirating hole corresponding with aspirating hole, stabilier correspondence are opened up on the stabilier
Plenum chamber is penetrated into after the card punching of heating agent circulation cavity, then is radially punched by the face of cylinder of stabilier,
Cross with the hole that card is beaten, form right angle channel.
Further, disk body central boss is set on upper disk body, is opened up in shown upper disk body central boss
Upper disk body medium entrance point, upper disk body media outlet end communicate with heating agent circulation cavity, arrange on lower disk body
Lower disk body central boss, opens up intake channel and passes through stabilier with exit passageway in shown lower disk body central boss
After upper corresponding opening respectively with the upper disk body medium entrance point that opens up in upper disk body central boss and upper disk body matchmaker
Jie's port of export is communicated.
Further, heat transfer gas air admission hole is opened up in the lower disk body central boss.
Further, the thermally conductive gas body opening is into the distribution of " rice " word, in the heat transfer of " rice " word distribution
8 aspirating holes are distributed between gas orifice.
Further, thermocouple screwed hole is set in upper disk body central boss and lower disk body central boss,
From temperature control disk outside thermocouple is passed through as the contact of upper disk body by thermocouple screwed hole.
Further, run through rear by solid by ceramics pole between upper disk body, lower disk body and stabilier three
Determine nut to fix.
Compared with prior art, beneficial effect is the present invention：Temperature control disk of the present invention is carried out cold using medium
But and heating, the circulation for utilizing the medium enters the control of trip temperature to temperature control disk, and media channel is distributed in heating
Inside disk.In order to preferably control the temperature of wafer, there be heat transfer gas passage temperature control disk inside, can
The temperature of wafer is passed into heating dish, more effectively the temperature of control wafer.
The present invention is provided with aspirating hole, has aspirating hole to take away unnecessary gas, effectively can not only enough control crystalline substance
Round temperature, moreover it is possible to ensure the stability of wafer.
Description of the drawings
Fig. 1 is heating dish Structure explosion diagram；
Fig. 2 heating dish upper disk surface topology views；
Fig. 3 heating dish stabilier topology views；
Fig. 4 stabilier aspirating hole planing surface views；
The hot lower disc view of Fig. 5 heating dish；
1st, upper disk body；2nd, ceramics pole；3rd, stabilier；4th, lower disk body；5th, fixing nut；6th, through hole；
7th, stabilier ceramics post holes；8th, thermally conductive gas body opening；9th, aspirating hole；10th, ceramic post holes；11st, heat
Matchmaker's channel entrance end；12nd, the heat medium passage port of export；13rd, thermocouple hole；14 gas via-holes；15th, stabilier
Medium import；16th, stabilier media outlet；17th, stabilier thermocouple hole, 18, stabilier aspirating hole；
19th, lower disk body medium import；20th, heat transfer gas air admission hole；21st, lower disk body media outlet；22nd, heat
Galvanic couple screwed hole.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, with reference to embodiments,
The present invention will be described in further detail.It should be appreciated that specific embodiment described herein only to
The present invention is explained, is not intended to limit the present invention.
Embodiment
Referring to Fig. 1, a kind of side is evacuated cellular type cavity temperature control disk, is mainly made up of five parts, disk on temperature control disk
Body 1；Ceramics pole 2；Stabilier 3；Lower disk body 4；Fixing nut 5.The individual features processing of each part
After completing, welded.Complete the processing of whole temperature control disk.Specially：Including upper disk body 1, under
Hole Winchester disk is divided into upper and lower two by disk body 4 and the setting stabilier 3 between upper disk body 1 and lower disk body 4
Individual chamber, wherein upper chamber are that heating agent circulates cavity, and lower chambers are plenum chamber, arrange multiple on upper disk body 1
Thermally conductive gas body opening 8, each thermally conductive gas body opening 8 is passed through to current stabilization room by pipe fitting, in upper disk body 1
On be evenly arranged with aspirating hole 9 and be passed through to current stabilization room, heat transfer gas air admission hole 20 is set on lower disk body 1
It is passed through to current stabilization room.Passed through by ceramics pole 2 between upper disk body 1, lower disk body 4 and the three of stabilier 3
The through hole 6 arranged after wearing is fixed by fixing nut 5.
Combine shown in Fig. 1 referring to Fig. 2, there are a circle boss, upper disk body 1 in the edge of the lower surface of upper disk body 1
Center, thermally conductive gas body opening 8 with center as divergence point by upper disk body be divided into six parts,
6 aspirating holes 9 are distributed between the thermally conductive gas body opening 8 of six part distributions, around aspirating hole 9
There is boss, the height of each boss is identical.
Have in central boss disk body medium entrance point 11, on disk body media outlet end 12, thermoelectricity
Even hole 13.Upper disk body medium entrance point 11 is communicated with upper disk body media outlet end 12 with heating agent circulation cavity.
Fig. 4 and Fig. 1 is combined referring to Fig. 3, stabilier 3 is respectively and the corresponding gas of thermally conductive gas body opening 8
Through hole 14, with heat medium passage entrance point 11, the corresponding stabilier medium of the heat medium passage port of export 12 import 15,
Stabilier media outlet 16, stabilier thermocouple hole 17 corresponding with thermocouple hole 13, and with upper disk body
On the corresponding stabilier of ceramic post holes 10 ceramics post holes 7, stabilier aspirating hole 18 corresponding with aspirating hole 9,
The planing surface structure of stabilier aspirating hole 18 by the card of stabilier 3 as shown in figure 4, punched first, but do not beat
Thoroughly, then by the face of cylinder of stabilier 3 radially punch, cross with the aperture that card is beaten, form right angle channel.
Referring to Fig. 5, the card of lower disk body 4 some boss, in order to welded with stabilier 3,
There is a circle boss, also have same height around the position of lower disk body through hole 6 at the edge of lower disc surfaces
Boss, still there is mutually level central boss in the center of upper disk body 1, for carrying out with stabilier 3
Sealing.Lower disk body medium import 19, lower disk body media outlet 21, thermocouple are had in central boss
Screwed hole 22, heat transfer gas air admission hole 20, heat transfer gas air admission hole 20 is passed through to current stabilization room, under
Disk body medium import 19, lower disk body media outlet 21 respectively with upper disk body medium entrance point 11 and upper disk body matchmaker
Jie's port of export 12 is communicated.
The upper disk body central boss arranged on upper disk body, the upper disk body medium opened up in upper disk body central boss
Entrance point 11, upper disk body media outlet end 12 communicate with heating agent circulation cavity, and on lower disk body lower wall is arranged
Body central boss, opens up intake channel with exit passageway by corresponding on stabilier in lower disk body central boss
After opening respectively with the upper disk body medium entrance point that opens up in upper disk body central boss and upper disk body media outlet end
Communicate.
Thermocouple screwed hole 22 is set in upper disk body central boss and lower disk body central boss, from temperature control disk
It is outside thermocouple is passed through as the contact of upper disk body by thermocouple screwed hole 22,.
Plus man-hour, it is middle after stabilier 3 and the welding of lower disk body 4 to form cavity, become plenum chamber, Ran Hou
Weld with upper disk body 1, thermal medium circulation cavity is formed between upper disk body 1 and stabilier 3, there is provided thermal medium
With heating dish heat exchange place.Then the ceramic post holes that ceramics pole is put into upper disk body is fixed with fixing nut.
Complete processing.
When using, heating agent is flowed into by lower disk body medium import 19, and in heating agent cavity interior circulation is circulated, and is made whole
Heating dish thermally equivalent, realizes the control to heating dish temperature.Heat transfer gas are by heat transfer gas air admission hole
Into after, the flow distribution first in current stabilization room, the effect of plenum chamber is to make heat transfer gas flow out each heat
Pressure is equal before conduction gas venthole, it is ensured that individual heat transfer gas venthole outlet is uniform, is then passing through
Each heat transfer gas venthole flows out, and between heating dish card and wafer gas membrane is formed, and carries out heat
Transmission, control wafer temperature and ensure wafer temperature uniformity, unnecessary gas is through aspirating hole stream
Go out.
Presently preferred embodiments of the present invention is the foregoing is only, it is all at this not to limit the present invention
Any modification, equivalent and improvement made within bright spirit and principle etc., should be included in the present invention
Protection domain within.
Claims (10)
1. a kind of side is evacuated cellular type cavity temperature control disk, it is characterised in that including upper disk body, lower disk body and position
Hole Winchester disk is divided into upper and lower two chambers, wherein upper chamber by the setting stabilier between upper disk body and lower disk body
Cavity is circulated for heating agent, lower chambers are plenum chamber, and multiple thermally conductive gas body openings, each gas are arranged on upper disk body
Thermally conductive gas body opening is passed through to current stabilization room by pipe fitting, be evenly arranged with upper disk body aspirating hole be passed through to
In current stabilization room, heat transfer gas air admission hole is set on lower disk body and is passed through to current stabilization room.
2. according to the side pumping cellular type cavity temperature control disk described in claim 1, it is characterised in that the heat is passed
Outwards upper disk body is uniformly divided into 4～8 pieces to air guide body opening by diverging centered on the above disk body center of circle on upper disk body.
3. according to the side pumping cellular type cavity temperature control disk described in claim 2, it is characterised in that upper disk body point
Into 4～8 block portions point on, be respectively provided with an aspirating hole.
4. according to the side pumping cellular type cavity temperature control disk described in claim 1, it is characterised in that upper disk body
The upper surface that the edge of lower surface has boss, lower disk body has boss, the boss that lower disk body passes through its own
Weld with the boss after current stabilization plate weld again with upper disk body.
5. according to the side pumping cellular type cavity temperature control disk described in claim 1, it is characterised in that the current stabilization
Stabilier aspirating hole corresponding with aspirating hole, the card punching of stabilier correspondence heating agent circulation cavity are opened up on plate
After penetrate into plenum chamber, then radially punched by the face of cylinder of stabilier, cross with the hole that card is beaten, formed
Right angle channel.
6. according to the side pumping cellular type cavity temperature control disk described in claim 1, it is characterised in that in upper disk body
Disk body central boss in upper setting, in shown upper disk body central boss disk body medium entrance point, upper disk are opened up
Body media outlet end and heating agent circulation cavity is communicated, disk body central boss under arranging on lower disk body, it is shown under
Open up in disk body central boss intake channel and exit passageway on stabilier after corresponding opening respectively with it is upper
The upper disk body medium entrance point opened up in disk body central boss is communicated with upper disk body media outlet end.
7. according to the side pumping cellular type cavity temperature control disk described in claim 6, it is characterised in that under described
Heat transfer gas air admission hole is opened up in disk body central boss.
8. according to the side pumping cellular type cavity temperature control disk described in claim 1, it is characterised in that the heat is passed
Air guide body opening is distributed into " rice " word, is distributed with 8 and takes out between the thermally conductive gas body opening of " rice " word distribution
Pore.
9. according to the side pumping cellular type cavity temperature control disk described in claim 6, it is characterised in that in upper disk body
Thermocouple screwed hole is set in central boss and lower disk body central boss, from temperature control disk outside thermocouple is passed through
Screwed hole is passed through thermocouple as the contact of upper disk body.
10. according to the side pumping cellular type cavity temperature control disk described in claim 1, it is characterised in that upper disk body,
Fixed by fixing nut through rear by ceramics pole between lower disk body and stabilier three.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510724579.0A CN106637144A (en) | 2015-10-29 | 2015-10-29 | Cavity temperature control disc with air exhaust holes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510724579.0A CN106637144A (en) | 2015-10-29 | 2015-10-29 | Cavity temperature control disc with air exhaust holes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106637144A true CN106637144A (en) | 2017-05-10 |
Family
ID=58829742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510724579.0A Pending CN106637144A (en) | 2015-10-29 | 2015-10-29 | Cavity temperature control disc with air exhaust holes |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106637144A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343012A (en) * | 1992-10-06 | 1994-08-30 | Hardy Walter N | Differentially pumped temperature controller for low pressure thin film fabrication process |
| US5645646A (en) * | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
| CN104862673A (en) * | 2015-04-27 | 2015-08-26 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc for discharging air in center |
| CN104911544A (en) * | 2015-06-25 | 2015-09-16 | 沈阳拓荆科技有限公司 | Temperature control disc |
| CN104928651A (en) * | 2015-04-27 | 2015-09-23 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc for output gas of warm flow chamber |
-
2015
- 2015-10-29 CN CN201510724579.0A patent/CN106637144A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5343012A (en) * | 1992-10-06 | 1994-08-30 | Hardy Walter N | Differentially pumped temperature controller for low pressure thin film fabrication process |
| US5645646A (en) * | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
| CN104862673A (en) * | 2015-04-27 | 2015-08-26 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc for discharging air in center |
| CN104928651A (en) * | 2015-04-27 | 2015-09-23 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc for output gas of warm flow chamber |
| CN104911544A (en) * | 2015-06-25 | 2015-09-16 | 沈阳拓荆科技有限公司 | Temperature control disc |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170510 |
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| RJ01 | Rejection of invention patent application after publication |