CN220503194U - Temperature control device and semiconductor device - Google Patents
Temperature control device and semiconductor device Download PDFInfo
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- CN220503194U CN220503194U CN202321818681.3U CN202321818681U CN220503194U CN 220503194 U CN220503194 U CN 220503194U CN 202321818681 U CN202321818681 U CN 202321818681U CN 220503194 U CN220503194 U CN 220503194U
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Abstract
The utility model provides a temperature control device and semiconductor equipment. Wherein, temperature regulating device includes: the heating device comprises a heating assembly, a heat conduction pipeline and a bearing plate; the heat conducting pipelines are positioned between the heating assembly and the bearing plate, and the heat conducting pipelines are uniformly distributed along the upper surface and/or the lower surface of the bearing plate; wherein, heat conduction fluid circulates in the heat conduction pipeline. Compared with the prior art, the heat conduction device utilizes the heat conduction fluid in the heat conduction pipeline to conduct heat, and improves heat transfer efficiency. And the heat conducting pipelines are uniformly distributed along the bearing plate, so that the temperature of each region on the bearing plate can be ensured to be uniform in the heating process, further, the semiconductor structure on the bearing plate is uniformly heated, the problem of uneven thickness of a deposited film caused by uneven temperature is avoided, and the uniformity of film deposition is improved. In addition, the heat conduction pipeline is low in preparation cost and simple to install.
Description
Technical Field
The utility model relates to the technical field of semiconductor preparation, in particular to a temperature control device and semiconductor equipment.
Background
In a semiconductor thin film deposition process, a heat treatment is required for the semiconductor structure to reach a preferred temperature for facilitating thin film growth. Currently, the heating devices used in the process are mainly heating plates to heat the semiconductor structure by resistive wires or high frequency induction. However, the conventional heating plate is prone to uneven heating, and seriously affects uniformity of the generated film. For example, as shown in fig. 1, in the process of depositing the nitride layer 11 on the surface of the substrate 10, the temperature of the central area of the heating plate 20 is lower than that of the edge area, and the reaction rate of the central area is lower than that of the edge area, so that the thickness of the edge area and the thinness of the central area of the nitride layer 11 are easily caused under the same deposition condition, which seriously affects the uniformity of the nitride layer 11, and is unfavorable for the implementation of the subsequent process. In this regard, the existing solution is to partition the heating area of the heating plate 20. That is, the heating region of the heating plate 20 is divided into a plurality of independent sub-regions, and the respective sub-regions are individually temperature-controlled to adjust the temperature of the respective regions of the substrate 10. However, the effect of this partition temperature control is still poor, and too many partitions can increase the number of power controllers and temperature acquisition modules in the heating plate 20, resulting in a problem of high manufacturing cost.
Therefore, a new heating assembly is needed to solve the above technical problems.
Disclosure of Invention
The utility model aims to provide a temperature control device and semiconductor equipment, which are used for solving at least one problem of how to improve the temperature uniformity of a heating component, how to improve the thickness uniformity of a film layer and how to reduce the preparation cost.
In order to solve the above technical problems, the present utility model provides a temperature control device, including: the heating device comprises a heating assembly, a heat conduction pipeline and a bearing plate;
the heat conducting pipelines are positioned between the heating assembly and the bearing plate, and the heat conducting pipelines are uniformly distributed along the upper surface and/or the lower surface of the bearing plate; wherein, heat conduction fluid circulates in the heat conduction pipeline.
Optionally, in the temperature control device, a volume of the heat conducting pipeline corresponding to a unit area of the bearing plate or a projection area of the heat conducting pipeline on the bearing plate is the same.
Optionally, in the temperature control device, the heat conducting pipeline is arranged along a surface parallel to the bearing plate in a spreading manner, and the spreading shape of the heat conducting pipeline is symmetrical with respect to the diameter of the bearing plate; the spreading shape of the heat conducting pipeline comprises a round shape, a return shape, a regular polygon or a petal shape.
Optionally, in the temperature control device, the heat conducting pipeline is connected with the bearing plate, and/or a heat conducting material is filled between the heat conducting pipeline and the bearing plate.
Optionally, in the temperature control device, the heating assembly includes a heating coil; and a heat conducting material is filled between the heating coil and the heat conducting pipeline.
Optionally, in the temperature control device, the temperature control device further includes a housing, the heating coil and the heat conducting pipeline are stacked in the housing, the heating coil is close to the bottom surface of the housing, and the heat conducting pipeline is close to the top surface of the housing; and the bearing plate is arranged on the top surface of the shell.
Optionally, in the temperature control device, the temperature control device further comprises a circulating pump; the circulating pump is connected with the inflow end and the outflow end of the heat conducting pipeline so as to drive the heat conducting fluid to circularly flow in the heat conducting pipeline at a constant speed.
Optionally, in the temperature control device, the temperature control device includes more than two heat conducting pipelines, at least part of inflow ends of the heat conducting pipelines are connected with the circulating pump after being connected, and at least part of outflow ends of the heat conducting pipelines are connected with the circulating pump after being connected; or the inflow end and the outflow end of each heat conducting pipeline are respectively connected with the circulating pump.
Optionally, in the temperature control device, the heat conducting fluid includes a gas, an inorganic liquid, an organic liquid, or a liquid metal.
Based on the same conception, the utility model also provides a semiconductor device comprising the temperature control device.
In summary, the present utility model provides a temperature control device and a semiconductor apparatus. Wherein, temperature regulating device includes: the heating device comprises a heating assembly, a heat conduction pipeline and a bearing plate; the heat conducting pipelines are positioned between the heating assembly and the bearing plate, and the heat conducting pipelines are uniformly distributed along the upper surface and/or the lower surface of the bearing plate; wherein, heat conduction fluid circulates in the heat conduction pipeline. Compared with the prior art, the heat conduction device utilizes the heat conduction fluid in the heat conduction pipeline to conduct heat, and improves heat transfer efficiency. And the heat conducting pipelines are uniformly distributed along the bearing plate, so that the temperature of each region on the bearing plate can be ensured to be uniform in the heating process, the semiconductor structure on the bearing plate is uniformly heated, the problem of uneven thickness of a deposited film caused by uneven temperature is avoided, and the uniformity of film deposition is improved. In addition, the heat conduction pipeline is low in preparation cost, simple in installation mode and beneficial to reducing the preparation cost on the premise of improving the heating uniformity.
Drawings
Those of ordinary skill in the art will appreciate that the figures are provided for a better understanding of the present utility model and do not constitute any limitation on the scope of the present utility model.
FIG. 1 is a schematic diagram of a prior art structure in which the thickness of the deposited nitride layer is not uniform.
Fig. 2 is a schematic structural diagram of a temperature control device according to an embodiment of the present utility model.
Fig. 3 is a schematic view showing the structure of an integrally controlled heating coil in an embodiment of the present utility model.
Fig. 4 is a schematic view showing a structure of a partition-controlled heating coil in an embodiment of the present utility model.
Fig. 5 is a schematic structural view of a heat conducting pipeline spread in a petal shape in an embodiment of the utility model.
Fig. 6 is a schematic structural view of another heat conducting pipeline spread in a petal shape in the embodiment of the utility model.
Fig. 7 is a schematic structural view of a heat conducting pipeline with circular spreading in an embodiment of the utility model.
Fig. 8 is a schematic structural view of a heat conducting pipeline spread in a regular hexagon according to an embodiment of the present utility model.
Fig. 9 is a schematic diagram showing connection of a circulation pump in the embodiment of the present utility model.
FIG. 10 is a schematic illustration of a connection between two heat pipes and a circulation pump in an embodiment of the present utility model.
FIG. 11 is a schematic illustration of another connection between two heat pipes and a circulation pump in an embodiment of the present utility model.
And, in the drawings:
10-substrate; 11-a nitride layer; 20-heating the disc;
30-a temperature control device; 301-a heating assembly; 3011-a heating coil; 3012-a power module; 3013-a power control module; 3014-a temperature acquisition module; 302-a heat conducting pipeline; 302 a-a first thermally conductive line; 302 b-a second thermally conductive line; 3021-an inflow end; 3021 a-a first inflow end; 3021 b-a second inflow end; 3022-the outflow end; 3022 a-a first outflow end; 3022 b-a second outflow end; 303-carrier plate; 304-a circulation pump; 305-a housing;
b1-a first region; b2-a second region; b3-a third region; b4-fourth region.
Detailed Description
The utility model will be described in further detail with reference to the drawings and the specific embodiments thereof in order to make the objects, advantages and features of the utility model more apparent. It should be noted that the drawings are in a very simplified form and are not drawn to scale, merely for convenience and clarity in aiding in the description of embodiments of the utility model. Furthermore, the structures shown in the drawings are often part of actual structures. In particular, the drawings are shown with different emphasis instead being placed upon illustrating the various embodiments. It should be further understood that the terms "first," "second," "third," and the like in this specification are used merely for distinguishing between various components, elements, steps, etc. in the specification and not for indicating a logical or sequential relationship between the various components, elements, steps, etc., unless otherwise indicated. And, the X-axis direction, the Y-axis direction, and the Z-axis direction referred to in the specification of the present application are three directions perpendicular to each other in a three-dimensional space.
Referring to fig. 2, the present embodiment provides a temperature control device 30, including: a heating assembly 301, a thermally conductive pipe 302 and a carrier plate 303; the heat conducting pipes 302 are located between the heating assembly 301 and the carrying plate 303, and the heat conducting pipes 302 are uniformly distributed along the lower surface and/or the lower surface of the carrying plate 303; wherein, the heat conducting fluid flows through the heat conducting pipeline 302.
It can be seen that the temperature control device 30 provided in this embodiment conducts heat by using the heat conducting fluid in the heat conducting pipeline 302, so as to improve heat transfer efficiency. And, the heat conducting pipes 302 are uniformly distributed along the carrying plate 303, so that in the heating process, the temperature of each region on the carrying plate 303 can be ensured to be uniform, and then the silicon wafer on the carrying plate 303 is heated uniformly, so that the problem of uneven thickness of the deposited film caused by uneven temperature is avoided, and the uniformity of film deposition is improved. In addition, the heat conducting pipeline 302 has low preparation cost and simple installation mode, and is beneficial to reducing the preparation cost on the premise of improving the heating uniformity.
The temperature control device 30 provided in this embodiment is specifically described below with reference to fig. 2 to 11.
With continued reference to fig. 2, the temperature control device 30 provided in this embodiment is used for controlling the temperature of the semiconductor structure to adjust the temperature state of the semiconductor structure, and/or to achieve uniform deposition of a film layer. Further, the temperature control device 30 includes a heating component 301, a heat conducting pipe 302 and a carrier plate 303; and the heating assembly 301, the heat conducting pipe 302 and the carrier plate 303 are stacked. Wherein the heating component 301 is configured to provide a preset temperature to regulate the temperature of the semiconductor structure. The heat conducting pipe 302 is configured to conduct a preset temperature provided by the heating component 301 to the semiconductor structure, and make each area of the semiconductor structure heated uniformly. The carrier plate 303 is used for carrying the semiconductor structure and/or the heat conducting pipe 302. Preferably, the material of the carrying plate 303 is metal, so as to ensure a better heat conduction effect. It should be noted that the semiconductor structure may be any substrate known to those skilled in the art for carrying semiconductor integrated circuit components, and may be a die, a wafer processed by an epitaxial growth process, or a circuit layer on which devices are formed.
Referring to fig. 2 to 4, the heating assembly 301 includes a heating coil 3011 for providing heat to reach a predetermined temperature of the semiconductor structure. The heating mode of the heating element 301 is not limited to resistance wire heating or high-frequency induction heating. Accordingly, the heating coil 3011 may be a resistance wire or a magnetic induction coil. Further, as shown in fig. 3, the heating coil 3011 has a unitary structure and is subjected to uniform temperature control. Alternatively, as shown in fig. 4, the heating coil 3011 may be divided into a plurality of regions, and the temperature of each region may be controlled individually. It should be noted that, the heating assembly 301 further includes a power module 3012, a power control module 3013, a temperature acquisition module 3014, etc., which are not described herein in detail.
Referring to fig. 2 and 5, the heat conducting pipe 302 may be a rigid pipe or a flexible pipe, so as to be capable of accommodating a heat conducting fluid and conducting heat by using the heat conducting fluid, thereby improving heat transfer efficiency. In one embodiment, the heat conducting pipe 302 is disposed between the carrier plate 303 and the heating coil 3011. Optionally, in the direction of the positive half axis of the Z axis, the heating coil 3011, the heat conducting pipeline 302 and the bearing plate 303 are sequentially connected or spaced; alternatively, the heat conducting pipe 302 is in contact with the heating coil 3011 and spaced from the carrier plate 303; alternatively, the heat conducting pipe 302 is in contact with the carrier plate 303 and is spaced apart from the heating coil 3011. The connection mode adopted can be fixed connection or detachable connection. The connection mode is exemplified as follows: welding, bonding, bolting or riveting, etc. Preferably, in some embodiments, the gaps among the heating coil 3011, the heat conducting pipeline 302 and the bearing plate 303 are uniformly filled with a heat conducting material, so as to improve the heat conducting effect and the heat conducting efficiency. Preferably, the heat conducting material is a good conductor of heat, for example: metals such as silver, copper, aluminum, or iron. Of course, the heat conductive material may be filled only between the heat conductive pipe 302 and the carrier plate 303, or only between the heat conductive pipe 302 and the heating coil 3011, according to the specific requirement of heat conduction, which is not particularly limited in this embodiment.
In other embodiments, the heat conducting pipe 302 may be near or located on the upper surface of the carrier plate 303, or the upper surface and the lower surface of the carrier plate 303 are respectively provided with the heat conducting pipe 302. Preferably, when the upper surface of the heat conducting pipe 302 is correspondingly provided with the heat conducting pipe 302, the top surface of the heat conducting pipe 302 is uniformly covered with the heat conducting material, and the semiconductor structure is disposed on the heat conducting material.
Further, the heat conducting pipes 302 are arranged along a direction parallel to the lower surface and/or the lower surface of the carrier plate 303. That is, the surface of the heat conducting pipe 302 in the spread state is parallel to the carrying plate 303. Preferably, the pattern area of the surface of the heat conducting pipe 302 in the spread state is equal to the area of the carrying plate 303, so that the heat conducting pipe 302 can uniformly transfer heat to each area of the carrying plate 303. It should be noted that, in the present embodiment and the drawings, only the heat conducting pipe 302 is taken as an example along the lower surface of the carrying plate 303. The heat conducting pipe 302 is disposed on the upper surface of the carrier plate 303, and the case where the heat conducting pipe 302 is disposed on the upper surface and the lower surface of the carrier plate 303 at the same time in a spreading manner may be described with reference to the embodiment and the drawings of the specification.
Further, in order to improve the uniformity of heating of the carrier plate 303, the volumes of the heat conducting pipes 302 opposite to each other in the unit area of the carrier plate 303 are the same, or in the case that the carrier plate 303 is connected to the heat conducting pipes 302, the areas of the outer walls of the heat conducting pipes 302 contacting each other in the unit area of the carrier plate 303 are the same; or the projected areas of the heat conducting pipes 302 on the carrying plate 303 in the unit area of the carrying plate 303 are the same. As shown in fig. 2 and 5, the carrying plate 303 is divided into four equal areas, which are respectively: a first region B1, a second region B2, a third region B3, and a fourth region B4. Wherein, the volumes of the heat conducting pipelines 302 corresponding to each region are the same, or the areas of the outer walls of the heat conducting pipelines 302 in contact are the same; or the projected area of the heat conducting pipe 302 on the carrying plate 303 in each area of the carrying plate 303 is the same. Therefore, the heat conduction amount received by each region in the carrier 303 is the same, so as to ensure that the heat of the carrier 303 is uniform, and thus the semiconductor material on the carrier 303 is heated uniformly, and the thickness of the deposited film is uniform.
It will be appreciated that, in order to make the unit area of the carrier plate 303 the same with respect to the volume and/or area of the heat conducting pipe 302, the spread shape of the heat conducting pipe 302 is an axisymmetric pattern and/or a centrosymmetric pattern. And, the carrying plate 303 is circular or other symmetrical shape, it is preferable that, when the carrying plate 303 is of a circular structure, the spreading shape of the heat conducting pipe 302 is symmetrical with respect to the diameter of the carrying plate 303; when the carrying plate 303 has a non-circular structure, the spreading shape of the heat conducting pipe 302 is symmetrical with respect to the symmetry axis of the carrying plate 303. Exemplary spreading shapes of the heat conductive pipe 302 include, but are not limited to, circular, square, regular polygon or petal shape, or a combination of two or more symmetrical patterns. As shown in fig. 5 and 6, the heat conducting pipe 302 is petal-shaped; as shown in fig. 7, the heat conducting pipe 302 is circular; and, as shown in fig. 8, the heat conducting pipe 302 has a regular hexagon shape. The specific shape of the heat conducting pipe 302 is not limited in this embodiment.
Further, as shown in fig. 5-8, the heat conducting pipe 302 has opposite ends, an inflow end 3021 and an outflow end 3022, respectively. The thermally conductive fluid may flow into the body of the thermally conductive pipe 302 via the inflow end 3021 and out of the thermally conductive pipe 302 via the outflow end 3022. In order to further improve the uniformity of heating of the carrier plate 303, it is preferable that the heat-conducting fluid flows at a constant speed in the heat-conducting pipe 302 during the temperature control process, so as to equalize the temperatures of the heat-conducting pipe 302. In this regard, as shown in fig. 9, the control device 30 further includes a circulation pump 304. The circulation pump 304 is connected to the inflow end 3021 and the outflow end 3022 of the heat conducting pipe 302 to drive the heat conducting fluid to circulate in the heat conducting pipe 302 at a constant speed. It will be appreciated that the circulation pump 304 serves as a circulation drive and flow rate control to facilitate adaptive adjustment of the heating of the carrier plate 303. Alternatively, the circulation pump 304 may pass through or around the heating coil 3011 via a pipe to interface with the inflow end 3021 and the outflow end 3022 of the heat transfer conduit 302. The specific type of the circulating pump 304 is not limited in this embodiment, and an electromagnetic pump, a centrifugal circulating pump, or the like may be selected.
Referring to fig. 9 to 11, the number of the heat conducting pipes 302 in the present embodiment may be one, two or more, and when two or more heat conducting pipes 302 are provided, the arrangement mode and the morphological feature of each heat conducting pipe 302 conform to the above-mentioned limitations, and the size and the spreading shape of each heat conducting pipe 302 may be the same or different. The term "above" in this embodiment includes this number. Further, when the number of the heat conductive pipes 302 is large, a plurality of the heat conductive pipes 302 may be stacked in the Z-axis direction. Further, when more than two heat conducting pipes 302 are provided, at least part of the inflow ends 3021 of the heat conducting pipes 302 are connected to the circulation pump 304 after being connected, and at least part of the outflow ends 3022 of the heat conducting pipes 302 are connected to the circulation pump 304 after being connected; alternatively, the inflow end 3021 and the outflow end 3022 of the plurality of heat conducting pipes 302 are connected to the circulation pump 304, respectively.
In other words, when a plurality of the heat-conducting pipes 302 are provided, all the inflow ends 3021 of the heat-conducting pipes 302 are connected to the output end of the circulation pump 304, and all the outflow ends 3022 of the heat-conducting pipes 302 are connected to the input end of the circulation pump 304. Alternatively, a portion of the inflow end 3021 of the heat transfer conduit 302 may be connected to the output end of the circulation pump 304, and a portion of the outflow end 3022 of the heat transfer conduit 302 may be connected to the input end of the circulation pump 304. The remainder of the inlet end 3021 and the outlet end 3022 of the heat transfer line 302 are connected to the circulation pump 304 separately. For example, the temperature control device 30 is provided with four heat conducting pipes 302, wherein the inflow end 3021 and the outflow end 3022 of two heat conducting pipes 302 are respectively connected correspondingly, and are connected to the circulation pump 304 after being connected. The remaining two heat transfer lines 302 are connected to the circulation pump 304 at an inflow end 3021 and an outflow end 3022, respectively. Alternatively, all of the inlet end 3021 and the outlet end 3022 of the heat transfer conduit 302 are connected to the circulation pump 304, respectively. Alternatively, the temperature control device 30 provided in this embodiment includes a plurality of circulation pumps 304, where each circulation pump 304 is connected to a portion of the heat conducting pipe 302, so as to respectively adjust the flow rate of the heat conducting fluid in the heat conducting pipe 302.
As shown in fig. 10, the temperature control device 30 includes two heat conducting pipes 302, a first heat conducting pipe 302a and a second heat conducting pipe 302b. Wherein, the first inflow end 3021a of the first heat conducting pipe 302a is connected to the second inflow end 3021b of the second heat conducting pipe 302b and then connected to the output end of the circulation pump 304; the first outflow end 3022a of the first heat conducting pipe 302a is connected to the second outflow end 3022b of the second heat conducting pipe 302b and then connected to the input end of the circulation pump 304. Alternatively, as shown in fig. 11, the first inflow end 3021a and the first outflow end 3022a of the first heat conduction pipe 302a, and the second inflow end 3021b and the second outflow end 3022b of the second heat conduction pipe 302b are connected to the circulation pump 304, respectively.
Further, the heat conducting fluid in this embodiment is a liquid or a gas with better heat conducting performance. When the heat-conducting fluid is liquid, the highest temperature provided by the heating coil 3011 is smaller than the boiling point of the heat-conducting fluid, and the lowest temperature provided by the heating coil 3011 is higher than the freezing point of the heat-conducting fluid. And preferably, the heat-conducting fluid is in a liquid state at normal temperature, so that the circulating pump 304 can drive the heat-conducting fluid to circulate in time in the temperature control process. Of course, the heat-conducting fluid may be solid at normal temperature. However, the expansion and cooling coefficients of the heat transfer fluid should be as small as possible so as not to cause significant changes in the volume of the substance as much as possible, thereby avoiding damage to the heat transfer conduit 302. And, the melting temperature of the heat-conducting fluid needs to be as low as possible to ensure that the solid can be changed into liquid state by slightly heating the heating coil 3011 before the temperature is controlled, and no external heating device is needed to change the physical form of the solid. Preferably, the heat transfer fluid is an inorganic liquid, an organic liquid, or a liquid metal. Alternatively, when the heat-conducting fluid is a gas, the thermal expansion coefficient of the gas is as small as possible, so as to avoid the excessive pressure caused by the over-high temperature, thereby causing the damage to the heat-conducting pipe 302. And, the minimum temperature provided by the heating coil 3011 is higher than the temperature of the liquefaction and solidification of the heat-conducting fluid, so as to avoid the physical form change of the heat-conducting fluid, and influence the implementation of temperature control. Further, the flow rate and the flow velocity of the heat-conducting fluid are not limited in this embodiment, and may be specifically adjusted according to the requirement of the preset temperature.
Further, referring to fig. 2 and 9, in some embodiments, the temperature control device 30 further includes a housing 305. The housing 305 is used to house various components. Wherein the housing 305 has opposing top and bottom surfaces. The carrier 303 is disposed on the top surface to carry the semiconductor structure. The bottom surface of the housing 305 is a supporting surface, and can be placed on a semiconductor machine in cooperation with a base or other structure. Based on this, the shape of the housing 305 includes, but is not limited to, cylindrical, frustoconical, or polygonal. Illustratively, as shown in FIG. 2, the housing 305 is cylindrical. Further, the housing 305 has an inner cavity, and the heating coil 3011 and the heat conducting pipe 302 are all accommodated in the inner cavity. Wherein, the heating coil 3011 and the heat conducting pipeline 302 are stacked in the inner cavity of the housing 305, the heating coil 3011 is close to the bottom surface of the housing 305, and the heat conducting pipeline 302 is close to the top surface of the housing 305. In other words, the heating coil 3011 and the heat conducting pipe 302 are disposed in parallel along the planes of the Y axis and the X axis, and the heat conducting pipe 302 is located above the heating coil 3011 and closer to the carrier plate 303, so as to conduct the heat provided by the heating coil 3011 to the carrier plate 303. Further, the circulation pump 304 may be disposed in the housing 305 or disposed outside the housing 305, which is not particularly limited in this embodiment.
As can be seen from the foregoing, compared with the conventional air medium heat conduction, the temperature control device 30 provided in this embodiment has the heat conduction pipeline 302, on one hand, the heat conduction pipeline 302 improves the heat conduction efficiency, and on the other hand, based on the uniform distribution of the heat conduction pipeline 302, the heat conduction pipeline 302 improves the heating uniformity of the carrier plate 303, and further improves the heating uniformity of the semiconductor material, so that the thickness of the film layer deposited on the semiconductor material is uniform. And, compared with the partition control of the heating coil 3011, the installation operation of the heat conducting pipeline 302 is simpler and more convenient, and the preparation cost is lower.
Based on the same conception, the present embodiment also provides a semiconductor device. The semiconductor device comprises the temperature control means 30. For example, the semiconductor device may be an atomic layer deposition device, a low-pressure chemical vapor deposition device, a physical vapor deposition device, or the like, so that in the process of performing the semiconductor process, the temperature control device 30 can improve the temperature uniformity of each region of the semiconductor material, thereby improving the process effect and enhancing the product performance.
In summary, the temperature control device 30 and the semiconductor device provided in the present embodiment are provided with the heat conducting pipeline 302, and heat is conducted by using the heat conducting fluid in the heat conducting pipeline 302, so that heat transfer efficiency is improved. And, the heat conducting pipes 302 are uniformly distributed along the carrying plate 303, so that in the temperature control process, the temperature of each region on the carrying plate 303 can be ensured to be uniform, and then the silicon wafer on the carrying plate 303 is heated uniformly, so that the problem of uneven thickness of the deposited film caused by uneven temperature is avoided, and the uniformity of film deposition is improved. In addition, the heat conducting pipeline 302 has low preparation cost and simple installation mode, and is beneficial to reducing the preparation cost on the premise of improving the heating uniformity.
It should also be appreciated that while the present utility model has been disclosed in the context of a preferred embodiment, the above embodiments are not intended to limit the utility model. Many possible variations and modifications of the disclosed technology can be made by anyone skilled in the art without departing from the scope of the technology, or the technology can be modified to be equivalent. Therefore, any simple modification, equivalent variation and modification of the above embodiments according to the technical substance of the present utility model still fall within the scope of the technical solution of the present utility model.
Claims (10)
1. A temperature control device, comprising: the heating device comprises a heating assembly, a heat conduction pipeline and a bearing plate;
the heat conducting pipelines are positioned between the heating assembly and the bearing plate, and the heat conducting pipelines are uniformly distributed along the upper surface and/or the lower surface of the bearing plate; wherein, heat conduction fluid circulates in the heat conduction pipeline.
2. The temperature control device of claim 1, wherein a volume of the heat conducting pipe corresponding to a unit area of the carrier plate or a projected area on the carrier plate is the same.
3. The temperature control device according to claim 1 or 2, wherein the heat conducting pipe is spread along a surface parallel to the carrier plate, and a spread shape of the heat conducting pipe is symmetrical with respect to a diameter of the carrier plate; the spreading shape of the heat conducting pipeline comprises a round shape, a return shape, a regular polygon or a petal shape.
4. The temperature control device of claim 1, wherein the thermally conductive conduit is connected to the carrier plate and/or a thermally conductive material is filled between the thermally conductive conduit and the carrier plate.
5. The temperature control device of claim 1 or 4, wherein the heating assembly comprises a heating coil; and a heat conducting material is filled between the heating coil and the heat conducting pipeline.
6. The temperature control device of claim 5, further comprising a housing, wherein the heating coil and the thermally conductive conduit are stacked within the housing, and wherein the heating coil is proximate to a bottom surface of the housing, and wherein the thermally conductive conduit is proximate to a top surface of the housing; and the bearing plate is arranged on the top surface of the shell.
7. The temperature control device of claim 1, further comprising a circulation pump; the circulating pump is connected with the inflow end and the outflow end of the heat conducting pipeline so as to drive the heat conducting fluid to circularly flow in the heat conducting pipeline at a constant speed.
8. The temperature control device of claim 7, wherein the temperature control device comprises more than two heat conducting pipelines, wherein at least part of inflow ends of the heat conducting pipelines are connected with the circulating pump after being connected, and at least part of outflow ends of the heat conducting pipelines are connected with the circulating pump after being connected; or the inflow end and the outflow end of each heat conducting pipeline are respectively connected with the circulating pump.
9. The temperature control device of claim 1, 7 or 8, wherein the thermally conductive fluid comprises a gas, an inorganic liquid, an organic liquid, or a liquid metal.
10. A semiconductor device comprising the temperature control apparatus according to any one of claims 1 to 9.
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| CN202321818681.3U CN220503194U (en) | 2023-07-11 | 2023-07-11 | Temperature control device and semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117849593A (en) * | 2024-03-05 | 2024-04-09 | 武汉普赛斯电子股份有限公司 | High heat conduction efficiency chip test carrier device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117849593A (en) * | 2024-03-05 | 2024-04-09 | 武汉普赛斯电子股份有限公司 | High heat conduction efficiency chip test carrier device |
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