CN104909329B - 微机电系统设备及其制造方法 - Google Patents
微机电系统设备及其制造方法 Download PDFInfo
- Publication number
- CN104909329B CN104909329B CN201510094983.4A CN201510094983A CN104909329B CN 104909329 B CN104909329 B CN 104909329B CN 201510094983 A CN201510094983 A CN 201510094983A CN 104909329 B CN104909329 B CN 104909329B
- Authority
- CN
- China
- Prior art keywords
- insulating film
- cover
- conductor
- cavity
- mems device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 title description 11
- 239000004020 conductor Substances 0.000 claims abstract description 45
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 50
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 37
- 235000012239 silicon dioxide Nutrition 0.000 claims description 26
- 239000000377 silicon dioxide Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 230000005669 field effect Effects 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-048448 | 2014-03-12 | ||
| JP2014048448A JP2015171740A (ja) | 2014-03-12 | 2014-03-12 | Ｍｅｍｓデバイス及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104909329A CN104909329A (zh) | 2015-09-16 |
| CN104909329B true CN104909329B (zh) | 2018-03-06 |
Family
ID=54068172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510094983.4A Active CN104909329B (zh) | 2014-03-12 | 2015-03-03 | 微机电系统设备及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9499394B2 (enExample) |
| JP (1) | JP2015171740A (enExample) |
| CN (1) | CN104909329B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6314568B2 (ja) * | 2014-03-18 | 2018-04-25 | セイコーエプソン株式会社 | Ｍｅｍｓデバイス及びその製造方法 |
| JP6331552B2 (ja) * | 2014-03-25 | 2018-05-30 | セイコーエプソン株式会社 | Ｍｅｍｓデバイス及びその製造方法 |
| CN109541319B (zh) * | 2018-10-10 | 2023-09-01 | 金华职业技术学院 | 一种液体介电常数测量方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5798283A (en) * | 1995-09-06 | 1998-08-25 | Sandia Corporation | Method for integrating microelectromechanical devices with electronic circuitry |
| US6012336A (en) * | 1995-09-06 | 2000-01-11 | Sandia Corporation | Capacitance pressure sensor |
| CN1848472A (zh) * | 2005-04-06 | 2006-10-18 | 株式会社东芝 | 采用mems技术的半导体器件 |
| CN103248994A (zh) * | 2012-02-06 | 2013-08-14 | 苏州敏芯微电子技术有限公司 | 集成电路与电容式微硅麦克风单片集成的制作方法及芯片 |
| CN103373698A (zh) * | 2012-04-26 | 2013-10-30 | 张家港丽恒光微电子科技有限公司 | 制作mems惯性传感器的方法及mems惯性传感器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4772302B2 (ja) * | 2003-09-29 | 2011-09-14 | パナソニック株式会社 | 微小電気機械システムおよびその製造方法 |
| US7585744B2 (en) * | 2003-12-08 | 2009-09-08 | Freescale Semiconductor, Inc. | Method of forming a seal for a semiconductor device |
| JP2008188711A (ja) * | 2007-02-05 | 2008-08-21 | Oki Electric Ind Co Ltd | 半導体装置製造方法 |
| JP2009272477A (ja) * | 2008-05-08 | 2009-11-19 | Rohm Co Ltd | Ｍｅｍｓセンサおよびその製造方法 |
| WO2010052682A2 (en) * | 2008-11-10 | 2010-05-14 | Nxp B.V. | Mems with poly-silicon cap layer |
| JP5630243B2 (ja) * | 2010-11-30 | 2014-11-26 | セイコーエプソン株式会社 | 電子装置、電子機器及び電子装置の製造方法 |
-
2014
- 2014-03-12 JP JP2014048448A patent/JP2015171740A/ja not_active Withdrawn
-
2015
- 2015-03-03 CN CN201510094983.4A patent/CN104909329B/zh active Active
- 2015-03-06 US US14/640,886 patent/US9499394B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5798283A (en) * | 1995-09-06 | 1998-08-25 | Sandia Corporation | Method for integrating microelectromechanical devices with electronic circuitry |
| US6012336A (en) * | 1995-09-06 | 2000-01-11 | Sandia Corporation | Capacitance pressure sensor |
| CN1848472A (zh) * | 2005-04-06 | 2006-10-18 | 株式会社东芝 | 采用mems技术的半导体器件 |
| CN103248994A (zh) * | 2012-02-06 | 2013-08-14 | 苏州敏芯微电子技术有限公司 | 集成电路与电容式微硅麦克风单片集成的制作方法及芯片 |
| CN103373698A (zh) * | 2012-04-26 | 2013-10-30 | 张家港丽恒光微电子科技有限公司 | 制作mems惯性传感器的方法及mems惯性传感器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015171740A (ja) | 2015-10-01 |
| US20150259193A1 (en) | 2015-09-17 |
| US9499394B2 (en) | 2016-11-22 |
| CN104909329A (zh) | 2015-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6686638B2 (en) | Micromechanical component including function components suspended movably above a substrate | |
| US9731962B2 (en) | MEMS device and fabrication method | |
| US10118820B2 (en) | Membrane transducer structures and methods of manufacturing same using thin-film encapsulation | |
| US8513041B2 (en) | MEMS integrated chip and method for making same | |
| US20160152465A1 (en) | Mems capacitive pressure sensors | |
| US8952467B2 (en) | Electronic device and its manufacturing method | |
| CN104909329B (zh) | 微机电系统设备及其制造方法 | |
| US20170081173A1 (en) | Mems devices and methods of manufacturing the same | |
| US9388039B2 (en) | MEMS device and method of manufacturing the same | |
| US9434607B2 (en) | MEMS device | |
| CN104925737B (zh) | 微机电系统装置及其制造方法 | |
| JP4544140B2 (ja) | Ｍｅｍｓ素子 | |
| US9434605B2 (en) | MEMS device | |
| US9365411B2 (en) | MEMS device and method for manufacturing the same | |
| JP4501715B2 (ja) | Ｍｅｍｓ素子およびｍｅｍｓ素子の製造方法 | |
| US9048247B2 (en) | Method for producing a metal structure in a semiconductor substrate | |
| JP2015145037A (ja) | Ｍｅｍｓ素子及びその製造方法 | |
| Karlin et al. | Park et a1. | |
| JP2015145036A (ja) | Ｍｅｍｓ素子及びその製造方法 | |
| CN102079500A (zh) | 微机电系统芯片及其制作方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |